MRF9045LR5

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs MRF9045LR1 MRF9045LSR1 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 28 volt base station equipment. • Typical Two--Tone Performance at 945 MHz, 28 Volts Output Power — 45 Watts PEP Power Gain — 18.8 dB Efficiency — 42% IMD — --32 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 945 MHz, 45 Watts CW Output Power Features • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. 945 MHz, 45 W, 28 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 360B--05, STYLE 1 NI--360 MRF9045LR1 CASE 360C--05, STYLE 1 NI--360S MRF9045LSR1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS -- 0.5, +65 Vdc Gate--Source Voltage VGS -- 0.5, + 15 Vdc PD 125 0.71 175 1 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.4 1.0 °C/W Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9045LR1 MRF9045LSR1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case MRF9045LR1 MRF9045LSR1 Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Class 1 (Minimum) M1 (Minimum) LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Document Number: MRF9045 Rev. 11, 9/2008 MRF9045LR1 MRF9045LSR1 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) — 3.7 — Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 4 — S Input Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss — 69 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 37 — pF Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.5 — pF Characteristic LIFETIME BUY On Characteristics Dynamic Characteristics LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Off Characteristics (continued) MRF9045LR1 MRF9045LSR1 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Two--Tone Common--Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 17 18.8 — dB Two--Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 38 42 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — --32 --28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL — --14 --9 dB Two--Tone Common--Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps — 18.5 — dB Two--Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — --33 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — 13 — dB Power Output, 1 dB Compression Point (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) P1dB — 55 — W Common--Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) Gps — 18 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 45 W CW, IDQ = 350 mA, f1 = 945.0 MHz) η — 60 — % LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 LIFETIME BUY Functional Tests (In Freescale Test Fixture, 50 ohm system) MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 3 B2 + C15 C14 + C16 + VDD C17 B1 VGG + C6 C7 L1 C9 Z9 Z8 Z10 Z11 Z12 C8 RF INPUT Z1 Z13 C10 C11 C4 C1 Z2 Z3 Z4 Z5 Z6 RF OUTPUT Z14 C13 Z15 C12 Z7 C5 LIFETIME BUY C2 B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5, C8, C9 C6, C15, C16 C10 C12 C17 L1, L2 Z1 Z2 Z3 C3 Short Ferrite Bead Surface Mount Long Ferrite Bead Surface Mount 47 pF Chip Capacitors 0.8--8.0 pF Gigatrim Variable Trim Capacitors 10 pF Chip Capacitors 10 μF, 35 V Tantalum Surface Mount Chip Capacitors 2.2 pF Chip Capacitor 0.7 pF Chip Capacitor -- MRF9045LS 1.3 pF Chip Capacitor -- MRF9045 220 μF, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors, Coilcraft 0.260″ x 0.080″ Microstrip 0.610″ x 0.120″ Microstrip 0.260″ x 0.320″ Microstrip Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 Z14 Z15 PCB 0.360″ x 0.320″ Microstrip 0.240″ x 0.320″ x 0.620″, Taper 0.140″ x 0.620″ Microstrip 0.510″ x 0.620″ Microstrip 0.330″ x 0.320″ Microstrip 0.140″ x 0.320″ Microstrip 0.070″ x 0.080″ Microstrip 0.240″ x 0.080″ Microstrip 0.140″ x 0.080″ Microstrip 0.930″ x 0.080″ Microstrip 0.180″ x 0.080″ Microstrip 0.350″ x 0.080″ Microstrip Arlon GX--0300--55--22, 0.03″, εr = 2.55 Figure 1. 930 -- 960 MHz Broadband Test Circuit Schematic C6 VGG C17 VDD B1 B2 C7 C14 C3 C4 WB2 CUT OUT AREA C2 WB1 L1 C1 C5 C9 C8 C15 C16 L2 C13 C10 C11 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 L2 C12 MRF9045 900 MHz Rev--01 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 930 -- 960 MHz Broadband Test Circuit Component Layout MRF9045LR1 MRF9045LSR1 4 RF Device Data Freescale Semiconductor 50 18 η 45 VDD = 28 Vdc Pout = 45 W (PEP) IDQ = 350 mA Two--Tone Measurement, 100 kHz Tone Spacing 17 16 15 IMD 930 935 --36 940 945 950 f, FREQUENCY (MHz) --38 960 955 --12 --14 --16 Figure 3. Class AB Broadband Circuit Performance IDQ = 525 mA 19.0 400 mA 18.5 350 mA 18.0 300 mA 17.5 VDD = 28 Vdc f1 = 945 MHz 17.0 16.5 1 0.5 10 Pout, OUTPUT POWER (WATTS) PEP --10 --30 --40 --60 Figure 4. Power Gain versus Output Power --10 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz f2 = 945.1 MHz --20 --30 --40 3rd Order --50 --60 5th Order --70 --80 7th Order --90 0.5 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power IDQ = 300 mA 525 mA --50 --70 100 VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz --20 400 mA 350 mA 0.5 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power 20 70 Gps 19 60 18 50 17 40 16 30 15 η 14 13 0.1 1 20 VDD = 28 Vdc IDQ = 350 mA f1 = 945 MHz 10 10 100 Pout, OUTPUT POWER (WATTS) PEP 0 η, DRAIN EFFICIENCY (%) 19.5 IMD, INTERMODULATION DISTORTION (dBc) 20.0 Gps, POWER GAIN (dB) G ps , POWER GAIN (dB) LIFETIME BUY --32 IRL 13 IMD, INTERMODULATION DISTORTION (dBc) --30 --34 14 12 40 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Gps IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 19 IMD, INTERMODULATION DISTORTION (dBc) 55 20 η , DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS Figure 7. Power Gain, Efficiency versus Output Power MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 5 Zsource Zload f = 960 MHz f = 930 MHz f = 930 MHz f = 960 MHz VDD = 28 V, IDQ = 350 mA, Pout = 45 W PEP f MHz Zsource Ω Zload Ω 930 1.02 + j0.06 2.6 + j0.20 945 1.10 + j0.11 2.6 + j0.16 960 1.15 + j0.25 2.6 + j0.10 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 8. Series Equivalent Source and Load Impedance LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 LIFETIME BUY Zo = 5 Ω MRF9045LR1 MRF9045LSR1 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS Q aaa 2X G B M T A M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 1 3 B 2 (FLANGE) D bbb M T A K 2X 2X M B M R (LID) N (LID) ccc T A M B ccc M C E T M (INSULATOR) A M M M B M F H S SEATING PLANE bbb T A M (INSULATOR) T A M B M aaa M T A M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 360B--05 ISSUE G NI--360 MRF9045LR1 MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 7 MRF9045LR1 MRF9045LSR1 8 RF Device Data Freescale Semiconductor MRF9045LR1 MRF9045LSR1 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION REVISION HISTORY The following table summarizes revisions to this document. Revision Date 11 Sept. 2008 Description • Replaced Case Outline 360C--05, Issue E with Issue F, p. 8--9. LIFETIME BUY • Added Product Documentation and Revision History, p. 10 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices MRF9045LR1 MRF9045LSR1 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MRF9045LR1 MRF9045LSR1 Document Number: RF Device Data MRF9045 Rev. 11, 9/2008 Freescale Semiconductor 11