Freescale Semiconductor
Technical Data
Document Number: MRF9045N
Rev. 12, 9/2008
RF Power Field Effect Transistor
MRF9045NR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device
make it ideal for large - signal, common - source amplifier applications in 28 volt
base station equipment.
• Typical Performance at 945 MHz, 28 Volts
Output Power — 45 Watts PEP
Power Gain — 19 dB
Efficiency — 41% (Two Tones)
IMD — - 31 dBc
• Integrated ESD Protection
• Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts CW Output Power
945 MHz, 45 W, 28 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Dual - Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
CASE 1265 - 09, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +65
Vdc
Gate - Source Voltage
VGS
- 0.5, + 15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
177
1.18
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
0.85
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
N - Channel Enhancement - Mode Lateral MOSFET
MRF9045NR1
1
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 150 μAdc)
VGS(th)
2
2.8
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 350 mAdc)
VGS(Q)
3
3.7
5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
—
0.22
0.4
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs
—
4
—
S
Input Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
70
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
38
—
pF
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.7
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
17
19
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
38
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
- 14
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
19
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
41
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
- 13
—
dB
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system)
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Off Characteristics
MRF9045NR1
2
RF Device Data
Freescale Semiconductor
B2
+
C6
C7
+
C15
C14
L1
L2
C9
C1 Z2
Z3
Z4
Z5
Z6
Z8
DUT
Z7
Z9
Z10
C8
C2
B1, B2
C1, C7, C13, C14
C2, C8
C3
C4, C5, C8, C9
C6, C15, C16
C10
C11
C12
C17
L1, L2
Z1
Z2
Z12 C13
Z11
C10
C11
+
C3
Short Ferrite Beads, Surface Mount
47 pF Chip Capacitors
2.7 pF Chip Capacitors
3.9 pF Chip Capacitor
10 pF Chip Capacitors
10 μF, 35 V Tantalum Surface Mount Capacitors
2.2 pF Chip Capacitor
4.7 pF Chip Capacitor
1.2 pF Chip Capacitor
220 μF, 50 V Electrolytic Capacitor
12.5 nH Inductors
0.20″ x 0.08″ Microstrip
0.57″ x 0.12″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
0.14″
0.47″
0.16″
0.18″
0.56″
0.33″
0.14″
0.36″
1.01″
0.15″
0.29″
x 0.32″
x 0.32″
x 0.32″
x 0.62″
x 0.62″
x 0.32″
x 0.32″
x 0.08″
x 0.08″
x 0.08″
x 0.08″
C12
Microstrip
Microstrip
x 0.62″ Taper
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
Figure 1. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Schematic
C6
C17
Vbias
Vsupply
B1
B2
C7
C1
C2
C3
Ground
C4
WB2
A1
C15 C16
C14
L2
C5
WB1
L1
C9
C8
A2
C10 C11
C12 C13
MRF9045MR1
Ground
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Component Layout
VDD
C17
RF
OUTPUT
Z13
C4
CUT OUT AREA
NOT RECOMMENDED FOR NEW DESIGN
C5
RF
INPUT Z1
+
C16
NOT RECOMMENDED FOR NEW DESIGN
B1
VGG
MRF9045NR1
RF Device Data
Freescale Semiconductor
3
B1
+
B2
C7
C8
C5
C1 Z2
Z3
Z4
Z5
Z6
C2
B1
B2
C1, C8, C13, C14
C2
C3
C4
C5, C6, C9, C10
C7, C15, C16
C11
C12
C17
L1, L2
WB1, WB2
+
C16
+
VDD
C17
L2
Z7
C3
C4
C9
Z8
DUT
Z9
Z10
Z11
Z12
C11
C10
C6
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors
0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim
3.6 pF Chip Capacitor
0.8 - 8.0 pF Variable Capacitor, Johanson Gigatrim
10 pF Chip Capacitors
10 μF, 35 V Tantalum Chip Capacitors
7.5 pF Chip Capacitor
0.6 - 4.5 pF Variable Capacitor, Johanson Gigatrim
220 μF Electrolytic Chip Capacitor
12.5 nH Surface Mount Inductors
10 mil Brass Wear Blocks
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Board
C13
RF
OUTPUT
Z13
C12
0.260″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.215″ x 0.270″ Microstrip
0.315″ x 0.270″ Microstrip
0.160″ x 0.270″ x 0.520″ Taper
0.285″ x 0.520″ Microstrip
0.140″ x 0.270″ Microstrip
0.450″ x 0.270″ Microstrip
0.250″ x 0.060″ Microstrip
0.720″ x 0.060″ Microstrip
0.490″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
Taconic RF - 35 - 0300, εr = 3.5
Figure 3. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Schematic
C17
C7
VGG
B2
B1
VDD
C15 C16
C8
C2
C3
C4
C6
WB2
C1
CUT OUT AREA
INPUT
C14
L2
C5
L1
WB1
NOT RECOMMENDED FOR NEW DESIGN
L1
RF
INPUT Z1
+
C15
C14
C9
C10
C13
C11
OUTPUT
C12
MRF9045MB
900 MHz
Rev−02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
NOT RECOMMENDED FOR NEW DESIGN
VGG
Figure 4. MRF9045NR1 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9045NR1
4
RF Device Data
Freescale Semiconductor
45
18
η
40
16
Two−Tone Measurement
100 kHz Tone Spacing
35
−30
IMD
15
14
IRL
−32
−34
−36
12
930
935
940
945
950
−38
960
955
−10
−12
−14
−16
IRL, INPUT RETURN
LOSS (dB)
VDD = 28 Vdc
Pout = 45 W (PEP)
IDQ = 350 mA
17
IMD, INTERMODULATION
DISTORTION (dBc)
G ps , POWER GAIN (dB)
Gps
13
−18
f, Frequency (MHz)
Figure 5. Class AB Broadband Circuit
Performance
IDQ = 525 mA
20
420 mA
350 mA
19.5
19
280 mA
18.5
18
VDD = 28 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
17.5
17
0.1
1
10
100
−15
−20
−25
−30
IDQ = 280 mA
−35
350 mA
−40
525 mA
−45
VDD = 28 Vdc
−50 f1 = 945 MHz,
f2 = 945.1 MHz
−55
0.1
10
100
Figure 7. Intermodulation Distortion versus
Output Power
Figure 6. Power Gain versus Output Power
−10
22
VDD = 28 Vdc
IDQ = 350 mA
f1 = 945 MHz
f2 = 945.1 MHz
3rd Order
−40
5th Order
−50
60
20
G ps , POWER GAIN (dB)
−30
1
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
−20
420 mA
−60
7th Order
18
40
16
30
14
20
12
−70
−80
50
Gps
VDD = 28 Vdc
IDQ = 350 mA
f = 945 MHz
η
10
1
10
100
0.1
1
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 8. Intermodulation Distortion Products
versus Output Power
Figure 9. Power Gain and Efficiency versus
Output Power
10
0
100
η, DRAIN EFFICIENCY (%)
G ps , POWER GAIN (dB)
20.5
IMD, INTERMODULATION DISTORTION (dBc)
21
IMD, INTERMODULATION DISTORTION (dBc)
NOT RECOMMENDED FOR NEW DESIGN
19
h , DRAIN
EFFICIENCY (%)
50
20
NOT RECOMMENDED FOR NEW DESIGN
TYPICAL CHARACTERISTICS
MRF9045NR1
RF Device Data
Freescale Semiconductor
5
1011
Pin = 1 W
Pin = 0.6 W
Pin = 0.3 W
24
26
IDQ = 350 mA
f = 945 MHz
Two−Tone Measurement
100 kHz Tone Spacing
28
30
32
VDD, DRAIN VOLTAGE (VOLTS)
Figure 10. Output Voltage versus Supply Voltage
1010
109
108
90 100 110 120 130 140 150 160 170 180 190 200 210
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 11. MTTF Factor versus Junction Temperature
NOT RECOMMENDED FOR NEW DESIGN
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
22
MTTF FACTOR (HOURS X AMPS2)
P out , OUTPUT POWER (WATTS) PEP
NOT RECOMMENDED FOR NEW DESIGN
TYPICAL CHARACTERISTICS
MRF9045NR1
6
RF Device Data
Freescale Semiconductor
Zload
Zsource
f = 945 MHz
f = 945 MHz
f = 930 MHz
f = 930 MHz
VDD = 28 V, IDQ = 350 mA, Pout = 45 W (PEP)
f
MHz
Zsource
Ω
Zload
Ω
930
0.81 - j0.25
2.03 + j0.09
945
0.85 - j0.05
2.03 + j0.28
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Source and Load Impedance
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Zo = 5 Ω
MRF9045NR1
RF Device Data
Freescale Semiconductor
7
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PACKAGE DIMENSIONS
MRF9045NR1
8
RF Device Data
Freescale Semiconductor
MRF9045NR1
RF Device Data
Freescale Semiconductor
9
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
MRF9045NR1
10
RF Device Data
Freescale Semiconductor
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
12
Sept. 2008
Description
• Data sheet revised to reflect part status change, including use of applicable overlay.
• Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 8 - 10. Corrected cross hatch pattern in
bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed
from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC
Standard Package Number.
• Added Product Documentation and Revision History, p. 11
NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
Application Notes
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
MRF9045NR1
RF Device Data
Freescale Semiconductor
11
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NOT RECOMMENDED FOR NEW DESIGN
NOT RECOMMENDED FOR NEW DESIGN
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MRF9045NR1
Document Number: MRF9045N
Rev. 12, 9/2008
12
RF Device Data
Freescale Semiconductor
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