Freescale Semiconductor
Technical Data
Document Number: MRF9060
Rev. 9, 5/2006
RF Power Field Effect Transistors
MRF9060LR1
MRF9060LSR1
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 17 dB
Efficiency — 40%
IMD — - 31 dBc
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
945 MHz, 60 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B - 05, STYLE 1
NI - 360
MRF9060LR1
CASE 360C - 05, STYLE 1
NI - 360S
MRF9060LSR1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, + 15
Vdc
PD
159
0.91
219
1.25
W
W/°C
W
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
RθJC
1.1
0.8
°C/W
Total Device Dissipation @ TC = 25°C
Derate above 25°C
MRF9060LR1
MRF9060LSR1
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N - Channel Enhancement - Mode Lateral MOSFETs
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
MRF9060LR1
MRF9060LSR1
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF9060LR1 MRF9060LSR1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 450 mAdc)
VGS(Q)
—
3.7
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
—
0.17
0.4
Vdc
gfs
—
5.3
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
98
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
50
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2
—
pF
Off Characteristics
Forward Transconductance
(VDS = 10 Vdc, ID = 4 Adc)
Dynamic Characteristics
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On Characteristics
(continued)
MRF9060LR1 MRF9060LSR1
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
16
17
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
36
40
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
- 31
- 28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
- 16
-9
dB
Two - Tone Common - Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
17
—
dB
Two - Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
39
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
- 31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
- 16
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,
f1 = 945.0 MHz)
P1dB
—
70
—
W
Common- Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,
f1 = 945.0 MHz)
Gps
—
17
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA,
f1 = 945.0 MHz)
η
—
51
—
%
ARCHIVE INFORMATION
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Functional Tests (In Freescale Test Fixture, 50 ohm system)
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
3
B1
B2
+
+
C6
C7
L1
L2
C4
RF
INPUT
Z2
Z3
ARCHIVE INFORMATION
C1
Z4
Z5
Z6
C2
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z7
C3
Z8
VDD
+
+
C15
C16
C17
C9
Z10
Z1
C13
Z11 Z12
Z13
Z14
Z15
Z16
C10
C11
C12
Z17
RF
OUTPUT
Z9
C5
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.180″ x 0.270″ Microstrip
0.350″ x 0.270″ Microstrip
0.270″ x 0.520 x 0.140″ Taper
0.170″ x 0.520″ Microstrip
0.410″ x 0.520″ Microstrip
0.060″ x 0.520″ Microstrip
DUT
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
C14
C8
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.330″ x 0.060″ Microstrip
0.230″ x 0.060″ Microstrip
0.740″ x 0.060″ Microstrip
0.130″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Taconic RF - 35- 0300, 30 mil, εr = 3.55
Figure 1. 945 MHz Broadband Test Circuit Schematic
Table 5. 945 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Short Ferrite Bead
95F786
Newark
B2
Long Ferrite Bead
95F787
Newark
C1, C7, C13, C14
47 pF Chip Capacitors
100B470JP 500X
ATC
C2, C3, C11
0.8- 8.0 Gigatrim Variable Capacitors
44F3360
Newark
C4, C5, C8, C9
10 pF Chip Capacitors
100B100JP 500X
ATC
C6, C15, C16
10 mF, 35 V Tantalum Chip Capacitor
93F2975
Newark
C10
3.0 pF Chip Capacitor
100B3R0JP 500X
ATC
C12
0.5 pF Chip Capacitor (MRF9060)
0.7 pF Chip Capacitor (MRF9060S)
100B0R5BP 500X
100B0R7BP 500X
ATC
ATC
C17
220 mF Electrolytic Chip Capacitor
14F185
Newark
L1, L2
12.5 nH Inductors
A04T- 5
Coilcraft
N1, N2
N - Type Panel Mount, Stripline
3052- 1648- 10
Avnet
WB1, WB2
10 mil Brass Wear Blocks
ARCHIVE INFORMATION
VGG
MRF9060LR1 MRF9060LSR1
4
RF Device Data
Freescale Semiconductor
C6
VGG
C17
VDD
B1
B2
C7
C13
C2
L2
WB1
C3
C5
WB2
CUT OUT AREA
ARCHIVE INFORMATION
C1
C15 C16
C8
C9
C14
C10
C11
OUTPUT
C12
MRF9060
900 MHz
Rev−02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
ARCHIVE INFORMATION
L1
INPUT
C4
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
5
45
16
h
40
VDD = 26 Vdc
Pout = 60 W (PEP)
IDQ = 450 mA
15
14
IMD
13
35
−30
−32
Two−Tone Measurement,
100 kHz Tone Spacing
12
−34
IRL
−36
11
10
ARCHIVE INFORMATION
930
935
940
945
950
f, FREQUENCY (MHz)
−38
960
955
−10
−12
−14
−16
−18
ARCHIVE INFORMATION
Gps
IRL, INPUT RETURN
LOSS (dB)
G ps , POWER GAIN (dB)
17
IMD, INTERMODULATION
DISTORTION (dBc)
50
18
h , DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
IDQ = 650 mA
G ps , POWER GAIN (dB)
17.5
500 mA
17
16.5
450 mA
16
275 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
15.5
15
1
−25
−30
IDQ = 275 mA
−35
−40
−45
500 mA
450 mA
−50
650 mA
VDD = 26 Vdc
f1 = 945 MHz
f2 = 945.1 MHz
−55
−60
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
1
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus
Output Power
0
60
20
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
−10
−20
−30
3rd Order
−40
−50
5th Order
−60
1
10
Pout, OUTPUT POWER (WATTS) PEP
50
40
16
h
14
100
Figure 6. Intermodulation Distortion Products
versus Output Power
30
20
12
VDD = 26 Vdc
IDQ = 450 mA
f = 945 MHz
10
7th Order
−70
0.1
Gps
18
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
−20
8
10
h, DRAIN EFFICIENCY (%)
18
IMD, INTERMODULATION DISTORTION (dBc)
Figure 3. Class AB Broadband Circuit Performance
10
100
0
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9060LR1 MRF9060LSR1
6
RF Device Data
Freescale Semiconductor
60
Gps
Gps, POWER GAIN (dB)
16
14
VDD = 26 Vdc
IDQ = 450 mA
f1 = 945 MHz
f2 = 945.1 MHz
h
12
6
20
0
−20
10
8
ARCHIVE INFORMATION
40
−40
IMD
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency, and IMD
versus Output Power
−60
ARCHIVE INFORMATION
18
h, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
7
Zsource
Zload
f = 930 MHz
f = 960 MHz
f = 960 MHz
f = 930 MHz
VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP
f
MHz
Zload
Ω
Zsource
Ω
930
0.80 - j0.10
2.08 - j0.65
945
0.80 - j0.05
2.07 - j0.38
960
0.81 - j0.10
2.04 - j0.37
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Zo = 5 Ω
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF9060LR1 MRF9060LSR1
8
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
9
ARCHIVE INFORMATION
ARCHIVE INFORMATION
NOTES
MRF9060LR1 MRF9060LSR1
10
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
Q
aaa
2X
G
B
M
T A
M
B
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
1
(FLANGE)
2
D
bbb M T A
K
2X
2X
M
B
R
M
(LID)
ccc
N
ccc
ARCHIVE INFORMATION
(LID)
T A
M
M
B
M
T A
M
B
M
F
H
M
C
E
S
(INSULATOR)
T
M
bbb
(INSULATOR)
A
aaa
SEATING
PLANE
M
T A
M
A
B
M
T A
M
B
M
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.795
0.805
0.225
0.235
0.125
0.175
0.210
0.220
0.055
0.065
0.004
0.006
0.562 BSC
0.077
0.087
0.220
0.250
0.355
0.365
0.357
0.363
0.125
0.135
0.227
0.233
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.19
20.45
5.72
5.97
3.18
4.45
5.33
5.59
1.40
1.65
0.10
0.15
14.28 BSC
1.96
2.21
5.59
6.35
9.02
9.27
9.07
9.22
3.18
3.43
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
M
CASE 360B - 05
ISSUE G
NI - 360
MRF9060LR1
A
A
(FLANGE)
B
1
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
2
B
(FLANGE)
2X
D
bbb
M
T A
M
2X
K
B
M
R
(LID)
ccc
M
T A
M
N
(LID)
ccc
T A
M
B
M
F
H
M
B
M
E
C
S
(INSULATOR)
PIN 3
T
M
(INSULATOR)
bbb
M
T A
M
B
SEATING
PLANE
aaa
M
T A
M
B
M
CASE 360C - 05
ISSUE E
NI - 360S
MRF9060LSR1
M
DIM
A
B
C
D
E
F
H
K
M
N
R
S
aaa
bbb
ccc
INCHES
MIN
MAX
0.375
0.385
0.225
0.235
0.105
0.155
0.210
0.220
0.035
0.045
0.004
0.006
0.057
0.067
0.085
0.115
0.355
0.365
0.357
0.363
0.227
0.23
0.225
0.235
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
9.53
9.78
5.72
5.97
2.67
3.94
5.33
5.59
0.89
1.14
0.10
0.15
1.45
1.70
2.16
2.92
9.02
9.27
9.07
9.22
5.77
5.92
5.72
5.97
0.13 REF
0.25 REF
0.38 REF
ARCHIVE INFORMATION
3
B
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
MRF9060LR1 MRF9060LSR1
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006, 2008. All rights reserved.
MRF9060LR1 MRF9060LSR1
Document Number: MRF9060
Rev. 9, 5/2006
12
RF Device Data
Freescale Semiconductor
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