Document Number: MRF9120
Rev. 10, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MRF9120LR3
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance of
this device makes it ideal for large-signal, common source amplifier applications
in 26 volt base station equipment.
• Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 1000 mA
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
Output Power — 26 Watts
Power Gain — 16 dB
Efficiency — 26%
Adjacent Channel Power —
750 kHz: -45 dBc in 30 kHz BW
1.98 MHz: -60 dBc in 30 kHz BW
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 120 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 120 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFET
ARCHIVE INFORMATION
ARCHIVE INFORMATION
N-Channel Enhancement-Mode Lateral MOSFET
CASE 375B-04, STYLE 1
NI-860
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDSS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
250
1.43
W
W/°C
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
0.45
°C/W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
© Freescale Semiconductor, Inc., 2006, 2009. All rights reserved.
Freescale Semiconductor
RF Product Device Data
Class
1 (Minimum)
M1 (Minimum)
MRF9120LR3
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage (1)
(VDS = 10 Vdc, ID = 200 μAdc)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage (2)
(VDS = 26 Vdc, ID = 1000 mAdc)
VGS(Q)
—
3.8
—
Vdc
Drain-Source On-Voltage (1)
(VGS = 10 Vdc, ID = 1.3 Adc)
VDS(on)
—
0.17
0.4
Vdc
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
50
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
2
—
pF
Characteristic
Off
Characteristics (1)
Dynamic Characteristics (1,3)
1. Each side of device measured separately.
2. Measurement made with device in push-pull configuration.
3. Part internally input matched.
(continued)
MRF9120LR3
2
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
ARCHIVE INFORMATION
On Characteristics
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Two-T one Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
Gps
15
16.5
—
dB
Two-T one Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
η
36
39
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 880.0 MHz, f2 = 880.1 MHz)
IRL
—
-16
-9
dB
Two-T one Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
Gps
—
16.5
—
dB
Two-T one Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IMD
—
-30
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 120 W PEP, IDQ = 1000 mA,
f1 = 895.0 MHz, f2 = 895.1 MHz)
IRL
—
-13
—
dB
Power Output, 1 dB Compression Point
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 880.0 MHz)
P1dB
—
120
—
W
Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 880.0 MHz)
Gps
—
16
—
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 120 W CW, IDQ = 1000 mA,
f1 = 880.0 MHz)
η
—
51
—
%
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system)
1. Measurement made with device in push-pull configuration.
MRF9120LR3
Freescale Semiconductor
RF Product Device Data
3
B6
B3
B4
C21
VGG
+
C10
C30
+
C25
C26
VDD
C27
L1
C11
Balun 1
+
+
R1
C8
Z16
Z18
Z20
Z22
C19
Z24
Z2
Z1
Z4
Z8
Z10
Z12
Z14
Z26
C2
C3
C1
Z3
ARCHIVE INFORMATION
Z6
Z5
Z7
C4
Z9
C5
Z11
DUT
C6
Z13
C7
R2
C13 C14 C15 C16 C17
C20
Z15
Z25
Z17
Z19
Z23
C18
Balun 2
B2
L2
C22
VGG
B5
+
C29
Z1
Z2, Z3
Z4, Z5
Z6, Z7
Z8, Z9
Z10, Z11
Z12, Z13
Z21
C12
C9
B1
Z27
RF
OUTPUT
0.420″ x 0.080″ Microstrip
0.090″ x 0.420″ Microstrip
0.125″ x 0.220″ Microstrip
0.095″ x 0.220″ Microstrip
0.600″ x 0.220″ Microstrip
0.200″ x 0.630″ Microstrip
0.500″ x 0.630″ Microstrip
Z14, Z15
Z16, Z17
Z18, Z19
Z20, Z21
Z22, Z23
Z24, Z25
Z26
Z27
+
+
+
C23
C24
VDD
C28
0.040″ x 0.630″ Microstrip
0.040″ x 0.630″ Microstrip
0.330″ x 0.630″ Microstrip
0.450″ x 0.630″ Microstrip
0.750″ x 0.220″ Microstrip
0.115″ x 0.420″ Microstrip
0.130″ x 0.080″ Microstrip
0.350″ x 0.080″ Microstrip
Figure 1. 880 MHz Broadband Test Circuit Schematic
MRF9120LR3
4
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
RF
INPUT
Table 5. 880 MHz Broadband Test Circuit Component Designations and Values
Description
Part Number
Manufacturer
Long Ferrite Beads, Surface Mount
95F787
Newark
B2, B4
Short Ferrite Beads, Surface Mount
95F786
Newark
C1, C2
68 pF Chip Capacitors
100B680JP500X
ATC
C3, C6
0.8 - 8.0 pF Variable Capacitors
44F3360
Newark
C4
7.5 pF Chip Capacitor
100B7R5JP150X
ATC
C5
3.3 pF Chip Capacitor
100B3R3CP150X
ATC
C7, C8
11 pF Chip Capacitors
100B110BCA500X
ATC
C9, C10, C21, C22
51 pF Chip Capacitors
100B510JP500X
ATC
C11, C12
6.2 pF Chip Capacitors
100B6R2BCA150X
ATC
C13
4.7 pF Chip Capacitor
100B4R7BCA150X
ATC
C14
5.1 pF Chip Capacitor
100B5R1BCA150X
ATC
C15
3.0 pF Chip Capacitor
100B2R7BCA150X
ATC
C16
2.7 pF Chip Capacitor
100B3R0BCA150X
ATC
C17
0.6 - 4.5 pF Variable Capacitor
44F3358
Newark
C18, C19
47 pF Chip Capacitors
100B470JP500X
ATC
C20
0.4 - 2.5 pF Variable Capacitor
44F3367
Newark
C29, C30
10 μF, 35 V Tantalum Chip Capacitors
93F2975
Newark
C23, C24, C25, C26
22 μF, 35 V Tantalum Chip Capacitors
92F1853
Newark
C27, C28
220 μF, 50 V Electrolytic Capacitors
14F185
Newark
Balun 1, Balun 2
Xinger Surface Mount Balun Transformers
3A412
Anaren
L1, L2
12.5 nH Mini Spring Inductors
A04T-5
Coilcraft
R1, R2
510 Ω, 1/4 W Chip Resistors
WB1, WB2, WB3, WB4
10 mil Brass Wear Blocks
Board Material
30 mil Glass Teflon®, εr = 2.55 Copper Clad, 2 oz Cu
900 MHz Push-Pull Rev 01B
CMR
PCB
Etched Circuit Board
900 MHz Push-Pull Rev 01B
CMR
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Part
B1, B3, B5, B6
MRF9120LR3
Freescale Semiconductor
RF Product Device Data
5
C30
B3
MRF9120
900 MHz
PUSH PULL
Rev 01B
B4
C25 C26
C10
INPUT
C5
C1
C6
ARCHIVE INFORMATION
R2
C9
WB2
C4
C7
Balun2
L1
WB3
C3
C11
WB4
C2
C8
WB1
R1
C21
CUTOUT AREA
Balun1
C27 VDD
B6
C12
C19
C17
OUTPUT
C16
C13-C15
C18
C20
L2
C22
C23 C24
VGG
C29
B1
B2
B5
C28 VDD
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/‐
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 2. 865-895 MHz Broadband Test Circuit Component Layout
MRF9120LR3
6
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
VGG
Gps
16
η
45
40
VDD = 26 Vdc
Pout = 120 W (PEP)
IDQ = 1000 mA
Tone Spacing = 100 kHz
15
14
35
-30
13
IMD
-32
12
IRL
-34
11
-36
-38
860
865
870
875
880
885
890
-12
-14
-16
-18
900
895
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
1500 mA
1200 mA
17
1000 mA
16.5
800 mA
16
VDD = 26 Vdc
f1 = 880.0 MHz
f2 = 880.1 MHz
15.5
15
1
-10
-20
VDD = 26 Vdc
f1 = 880.0 MHz
f2 = 880.1 MHz
-30
800 mA
-40
1000 mA
-50
-60
Pout, OUTPUT POWER (WATTS) PEP
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus
Output Power
-10
18
VDD = 26 Vdc
IDQ = 1000 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
-30
-40
3rd Order
-50
5th Order
7th Order
-60
60
Gps
16
Gps, POWER GAIN (dB)
-20
10
1
100
10
1200 mA
1500 mA
50
14
40
12
30
10
20
η
VDD = 26 Vdc
IDQ = 1000 mA
f = 880 MHz
8
-70
6
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
1000
10
h, DRAIN EFFICIENCY (%)
17.5
G ps , POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
18
IMD, INTERMODULATION DISTORTION (dBc)
ARCHIVE INFORMATION
10
-10
ARCHIVE INFORMATION
17
IRL, INPUT RETURN LOSS (dB)
50
IMD, INTERMODULATION
DISTORTION (dBc)
G ps , POWER GAIN (dB)
18
h , DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
0
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
MRF9120LR3
Freescale Semiconductor
RF Product Device Data
7
18
60
40
14
20
η
12
0
VDD = 26 Vdc
IDQ = 1000 mA
f1 = 880.0 MHz
f2 = 880.1 MHz
10
-20
8
-40
IMD
6
-60
ARCHIVE INFORMATION
1
100
10
ARCHIVE INFORMATION
G ps , POWER GAIN (dB)
Gps
16
h, DRAIN EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
Pout, OUTPUT POWER (WATTS) PEP
18
40
Gps
G ps , POWER GAIN (dB)
16
20
η
14
0
VDD = 26 Vdc
IDQ = 1000 mA
f = 880 MHz
IS-95, Pilot, Sync, Paging
Traffic Codes 8 through 13
12
10
-20
-40
750 kHz
8
-60
1.98 MHz
6
-80
0.1
1
10
h, DRAIN EFFICIENCY (%)
ACPR, ADJACENT CHANNEL POWER RATIO (dB)
Figure 8. Power Gain, Efficiency and IMD versus
Output Power
100
Pout, OUTPUT POWER (WATTS) AVG.
Figure 9. Power Gain, Efficiency and ACPR
versus Output Power
MRF9120LR3
8
Freescale Semiconductor
RF Product Device Data
Zo = 5 Ω
Zload
f = 895 MHz
f = 865 MHz
f = 865 MHz
Zsource
ARCHIVE INFORMATION
ARCHIVE INFORMATION
f = 895 MHz
VDD = 26 V, IDQ = 1000 mA, Pout = 120 W PEP
Zload
Ω
f
MHz
Zsource
Ω
865
4.89 - j0.2
4.9 - j0.5
880
4.54 + j0.07
4.6 - j0.32
895
3.29 - j1.3
4.2 - j0.04
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
-
Z
source
Output
Matching
Network
+
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF9120LR3
Freescale Semiconductor
RF Product Device Data
9
PACKAGE DIMENSIONS
Q
bbb
M
T A
M
B
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. RECOMMENDED BOLT CENTER DIMENSION OF
1.140 (28.96) BASED ON M3 SCREW.
4
G
B
L
1
2
B (FLANGE)
5
3
4X
K
4X
4
D
bbb
T A
M
M
B
M
ARCHIVE INFORMATION
ccc
ccc
M
T A
M
B
T A
M
B
M
R
M
F
(LID)
H
N
C
(LID)
E
M
S
DIM
A
B
C
D
E
F
G
H
K
L
M
N
Q
R
S
bbb
ccc
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.180
0.224
0.325
0.335
0.060
0.070
0.004
0.006
1.100 BSC
0.097
0.107
0.085
0.115
0.425 BSC
0.852
0.868
0.851
0.869
0.118
0.138
0.395
0.405
0.394
0.406
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
4.57
5.69
8.26
8.51
1.52
1.78
0.10
0.15
27.94 BSC
2.46
2.72
2.16
2.92
10.80 BSC
21.64
22.05
21.62
22.07
3.00
3.51
10.03
10.29
10.01
10.31
0.25 REF
0.38 REF
(INSULATOR)
bbb
M
PIN 5
(INSULATOR)
bbb
M
T A
M
M
T
B
M
SEATING
PLANE
T A
M
B
M
STYLE 1:
PIN 1.
2.
3.
4.
5.
DRAIN
DRAIN
GATE
GATE
SOURCE
CASE 375B-04
ISSUE F
NI-860
MRF9120LR3
10
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
2X
A
A
REVISION HISTORY
The following table summarizes revisions to this document.
Date
10
Dec. 2009
Description
• Data sheet archived. Part no longer manufactured.
ARCHIVE INFORMATION
ARCHIVE INFORMATION
Revision
MRF9120LR3
Freescale Semiconductor
RF Product Device Data
11
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© Freescale Semiconductor, Inc. 2006, 2009. All rights reserved.
MRF9120LR3
Document Number: MRF9120
Rev. 10, 5/2006
12
Freescale Semiconductor
RF Product Device Data
ARCHIVE INFORMATION
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