MRFE6S9135HSR5

Freescale Semiconductor Technical Data Document Number: MRFE6S9135H Rev. 1, 11/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9135HR3 MRFE6S9135HSR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. • Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1000 mA, Pout = 39 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 32.3% Device Output Signal PAR — 6.4 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 39.5 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 180 W CW (3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Optimized for Doherty Applications • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 940 MHz, 39 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 1 NI - 880 MRFE6S9135HR3 CASE 465C - 02, STYLE 1 NI - 880S MRFE6S9135HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +66 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 136 W CW Case Temperature 80°C, 39 W CW RθJC 0.39 0.48 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9135HR3 MRFE6S9135HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) II (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1.4 2.1 2.9 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1000 mAdc, Measured in Functional Test) VGS(Q) 2.2 2.9 3.7 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.8 Adc) VDS(on) 0.15 0.2 0.35 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.3 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 410 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 343 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 39 W Avg. W - CDMA, f = 940 MHz, Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 20 21 23 dB Drain Efficiency ηD 30.5 32.3 — % PAR 6.1 6.4 — dB ACPR — - 39.5 - 38 dBc IRL — - 15 -9 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) MRFE6S9135HR3 MRFE6S9135HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, 920 - 960 MHz Bandwidth Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz