MRFE6S9160HR3

Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA. Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9160HR3 MRFE6S9160HSR3 880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9160HR3 CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9160HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +66 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 160 W CW Case Temperature 73°C, 35 W CW Symbol RθJC Value (2,3) 0.31 0.33 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9160HR3 MRFE6S9160HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 525 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) — 3 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGG(Q) 2.1 3.17 4.22 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) 0.1 0.175 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.2 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 80.2 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 20 21 23 dB Drain Efficiency ηD 29 31 — % ACPR — - 46.8 - 45 dBc IRL — - 17 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. VGG = 19/18 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part is internally matched on input. (continued) MRFE6S9160HR3 MRFE6S9160HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz