Freescale Semiconductor
Technical Data
Document Number: MRFE6S9205H
Rev. 0, 10/2007
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
MRFE6S9205HR3
MRFE6S9205HSR3
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 58 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain — 21.2 dB
Drain Efficiency — 34%
Device Output Signal PAR — 6.3 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — - 39.1 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 260 W CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
880 MHz, 58 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRFE6S9205HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRFE6S9205HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
- 0.5, +66
Vdc
Gate - Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 202 W CW
Case Temperature 77°C, 58 W CW
RθJC
0.27
0.33
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools (Software & Tools)/Calculators to access the MTTF calculators
by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2007. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFE6S9205HR3 MRFE6S9205HSR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
Class 1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
Class B (Minimum)
Charge Device Model (per JESD22 - C101)
Class IV (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
10
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 600 μAdc)
VGS(th)
1.4
2.1
2.9
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.2
2.9
3.7
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 4.2 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.63
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
590
—
pF
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
491
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (1)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 58 W Avg. W - CDMA, f = 880 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
20
21.2
23
dB
Drain Efficiency
ηD
32
34
—
%
PAR
6
6.3
—
dB
ACPR
—
- 39.1
- 37.5
dBc
IRL
—
- 12.5
- 8.5
dB
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched on input.
(continued)
MRFE6S9205HR3 MRFE6S9205HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 865 - 900 MHz Bandwidth
Video Bandwidth @ 220 W PEP Pout where IM3 = - 30 dBc
(Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW
frequency - IMD3 @ 100 kHz