MRFE6VP61K25HSR6

Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz.  Typical Performance: VDD = 50 Volts, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) 1250 Peak 230 24.0 74.0 CW 1250 CW 230 22.9 74.6 Signal Type MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 1.8--600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Application Circuits (1) — Typical Performance Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 27 CW 1300 27 81 40 CW 1300 26 85 81.36 CW 1250 27 84 87.5--108 CW 1100 24 80 144--148 CW 1250 26 78 170--230 DVB--T 225 25 30 352 Pulse (200 sec, 20% Duty Cycle) 1250 21.5 66 352 CW 1150 20.5 68 500 CW 1000 18 58 NI--1230H--4S MRFE6VP61K25HR6/R5 NI--1230S--4S MRFE6VP61K25HSR5 1. Contact your local Freescale sales office for additional information on specific circuit designs. Load Mismatch/Ruggedness Frequency (MHz) 230 Signal Type VSWR Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles Pout (W) Test Voltage 1500 Peak (3 dB Overdrive) 50 NI--1230GS--4L MRFE6VP61K25GSR5 Result No Device Degradation Gate A 3 1 Drain A Gate B 4 2 Drain B Features  Unmatched Input and Output Allowing Wide Frequency Range Utilization  Device can be used Single--Ended or in a Push--Pull Configuration Qualified Up to a Maximum of 50 VDD Operation Characterized from 30 V to 50 V for Extended Power Range Suitable for Linear Application with Appropriate Biasing Integrated ESD Protection with Greater Negative Gate--Source Voltage Range for Improved Class C Operation  Characterized with Series Equivalent Large--Signal Impedance Parameters     (Top View) Note: The backside of the package is the source terminal for the transistors. Figure 1. Pin Connections  In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13--inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel.  Freescale Semiconductor, Inc., 2010--2014. All rights reserved. MRFE6VP61K25HR6 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +133 Vdc Gate--Source Voltage VGS --6.0, +10 Vdc Storage Temperature Range Tstg -- 65 to +150 C Case Operating Temperature TC 150 C Operating Junction Temperature (1,2) TJ 225 C PD 1333 6.67 W W/C Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 63C, 1250 W CW, IDQ = 100 mA, 230 MHz RJC 0.15 C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 66C, 1250 W Pulse, 100 sec Pulse Width, 20% Duty Cycle, IDQ = 100 mA, 230 MHz ZJC 0.03 C/W Total Device Dissipation @ TC = 25C Derate above 25C Table 2. Thermal Characteristics Characteristic Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 3500 V Machine Model (per EIA/JESD22--A115) B, passes 250 V Charge Device Model (per JESD22--C101) IV, passes 4000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IGSS — — 1 Adc 133 — — Vdc Off Characteristics (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 mA) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 20 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 1776 Adc) VGS(th) 1.7 2.2 2.7 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 100 mAdc, Measured in Functional Test) VGS(Q) 1.9 2.2 2.9 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.15 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 30 Adc) gfs — 28.0 — S Reverse Transfer Capacitance (VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.8 — pF Output Capacitance (VDS = 50 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 185 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) Ciss — 562 — pF On Characteristics Dynamic Characteristics (4) 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 4. Each side of device measured separately. (continued) MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 2 RF Device Data Freescale Semiconductor, Inc. Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak (250 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle Gps 23.0 24.0 Drain Efficiency D 72.5 74.0 — % Input Return Loss IRL — --14 --10 dB Power Gain 26.0 dB Table 5. Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system) IDQ = 100 mA Frequency (MHz) 230 Signal Type VSWR Pout (W) Pulse (100 sec, 20% Duty Cycle) > 65:1 at all Phase Angles 1500 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation 1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull wing (GS) parts. MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 3 -- C22 C13 C11 C12 -- C10 C23 C24 C21 COAX1 COAX3 R1 L3 C16 C3 L2 R2 COAX2 C17 C15 C14 C5 C18 CUT OUT AREA C1 C2 C4 L1 C20 C19 L4 COAX4 C25 C6 C7 C8 C9 C26 MRFE6VP61K25H Rev. 3 -- C27 -- C28 Figure 2. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Layout — Pulse Table 6. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Component Designations and Values — Pulse Part Description Part Number Manufacturer C1 20 pF Chip Capacitor ATC100B200JT500XT ATC C2, C3, C5 27 pF Chip Capacitors ATC100B270JT500XT ATC C4 0.8--8.0 pF Variable Capacitor, Gigatrim 27291SL Johanson C6, C10 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet C7, C11 0.1 F Chip Capacitors CDR33BX104AKYS AVX C8, C12 220 nF Chip Capacitors C1812C224K5RACTU Kemet C9, C13, C21, C25 1000 pF Chip Capacitors ATC100B102JT50XT ATC C14 43 pF Chip Capacitor ATC100B430JT500XT ATC C15 75 pF Metal Mica MIN02--002EC750J--F CDE C16, C17, C18, C19 240 pF Chip Capacitors ATC100B241JT200XT ATC C20 6.2 pF Chip Capacitor ATC100B6R2BT500XT ATC C22, C23, C24, C26, C27, C28 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp Coax1, 2, 3, 4 25  Semi Rigid Coax, 2.2 Shield Length UT--141C--25 Micro--Coax L1, L2 5 nH Inductors A02TKLC Coilcraft L3, L4 6.6 nH Inductors GA3093--ALC Coilcraft R1, R2 10  Chip Resistors CRCW120610R0JNEA Vishay PCB 0.030, r = 2.55 AD255A Arlon MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 4 RF Device Data Freescale Semiconductor, Inc. RF INPUT RF Device Data Freescale Semiconductor, Inc. C1 Z2 VBIAS C3 Z6 Z10 Z8 + C6 C8 C5 C4 C7 Z9 Z7 C12 C9 L2 L1 C13 R2 Z12 Z14 Z13 Z11 R1 DUT Z16 Z15 L4 Z20 Z18 Z22 C14 Z21 Z17 Z19 L3 C25 Z24 Z23 C21 Z26 C15 Z25 + C26 C19 C18 C17 C16 C27 0.175  0.082 Microstrip 0.170  0.100 Microstrip 0.116  0.285 Microstrip 0.116  0.285 Microstrip 0.108  0.285 Microstrip Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Description 0.192  0.082 Microstrip Z1 Microstrip Z28 Z27 C24 C23 C22 + C28 VSUPPLY COAX4 COAX3 VSUPPLY Microstrip Z21, Z22 Z19*, Z20* Z17*, Z18* Z15, Z16 Z13, Z14 Z11*, Z12* Description 0.104  0.507 Microstrip 0.187  0.154 Microstrip 0.466  0.363 Microstrip 0.371  0.507 Microstrip 0.412  0.726 Microstrip 0.872  0.058 Microstrip Microstrip 0.179  0.082 Microstrip 0.186  0.082 Microstrip 0.116  0.300 Microstrip 0.127  0.300 Microstrip 1.251  0.300 Microstrip Z29 * Line length includes microstrip bends Z30 Z29 Z27, Z28 Z25, Z26 Z23, Z24 Description Figure 3. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Schematic — Pulse COAX2 Z4 C2 Z5 C11 + Z3 C10 + + Table 7. MRFE6VP61K25HR6(HSR6) 230 MHz Production Test Circuit Microstrips — Pulse Z1 COAX1 VBIAS + MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 5 C20 RF Z30 OUTPUT TYPICAL CHARACTERISTICS 66 2000 Ciss Pout, OUTPUT POWER (dBm) PULSED C, CAPACITANCE (pF) 1000 Coss 100 10 Crss 1 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 0 10 20 30 P2dB = 61.7 dBm (1472 W) 64 63 P1dB = 61.3 dBm (1333 W) 62 Actual 61 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 60 59 35 50 40 Ideal P3dB = 61.9 dBm (1553 W) 65 36 37 38 39 40 41 42 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Pin, INPUT POWER (dBm) PEAK Note: Each side of device measured separately. Figure 5. Output Power versus Input Power Figure 4. Capacitance versus Drain--Source Voltage 80 70 23 60 Gps 22 50 21 40 24 Gps, POWER GAIN (dB) 24 35 V VDD = 30 V 0 200 400 600 800 1000 1200 1400 1600 Pout, OUTPUT POWER (WATTS) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power Figure 7. Power Gain versus Output Power 26 35 V VDD = 30 V 40 V 45 V 50 V Gps, POWER GAIN (dB) 60 50 40 200 400 600 800 1000 1200 1400 24 23 25_C 1600 Pout, OUTPUT POWER (WATTS) PEAK Figure 8. Drain Efficiency versus Output Power 80 60 50 22 Gps 85_C 21 19 100 90 85_C 70 TC = --30_C 20 IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 30 --30_C 25_C 25 70 0 45 V 40 V 19 Pout, OUTPUT POWER (WATTS) PEAK 80 D, DRAIN EFFICIENCY (%) 20 16 90 20 50 V 21 17 30 2000 1000 23 22 18 D 20 100 IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 25 D, DRAIN EFFICIENCY (%) 25 Gps, POWER GAIN (dB) 26 90 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle D 40 VDD = 50 Vdc, IDQ = 100 mA, f = 230 MHz Pulse Width = 100 sec, 20% Duty Cycle 1000 D, DRAIN EFFICIENCY (%) 26 30 20 2000 Pout, OUTPUT POWER (WATTS) PEAK Figure 9. Power Gain and Drain Efficiency versus Output Power MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 109 MTTF (HOURS) 108 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1250 W CW, and D = 74.6%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 10. MTTF versus Junction Temperature — CW VDD = 50 Vdc, IDQ = 100 mA, Pout = 1250 W Peak f MHz Zsource  Zload  230 1.29 + j3.54 2.12 + j2.68 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50  + Zload Figure 11. Series Equivalent Test Circuit Source and Load Impedance — 230 MHz Pulse MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 7 VDD = 50 Vdc, IDQ = 100 mA f (MHz) Zsource () Zload () 1.8 (1) 34.4 + j192.0 (1) 5.00 - j4.00 (1) 27 12.5 + j7.00 7.00 + j0.70 40 5.75 + j5.06 5.39 + j2.62 81.36 4.04 + j5.93 4.89 + j2.95 88 2.20 + j6.70 4.90 + j2.90 98 2.30 + j6.90 4.10 + j2.50 108 2.30 + j7.00 4.40 + j3.60 144 1.60 + j5.00 3.90 + j1.50 175 1.33 + j3.90 3.50 + j2.50 230 1.29 + j3.54 2.12 + j2.68 352 0.98 + j1.45 1.82 + j2.05 500 0.29 + j1.47 1.79 + j1.80 1. Simulated data. Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50  + Zload Figure 12. Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--Pull MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 8 RF Device Data Freescale Semiconductor, Inc. 87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT COAX1 C15 C16 C1 C19 C18 + + C17 B1 L2 R1 L1 COAX3 L4 C3 C7 C8 C9 C4 T1 C10 C11 L3 C2 C24 Q1 MRFE6VP61K25H Rev. 1 C22 C5 C12 L5 + + C21 C20 C23 Note: Component numbers C6, C13 and C14 are not used. COAX2 Figure 13. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Layout Table 8. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values Part Description Part Number Manufacturer B1 Long Ferrite Bead 2743021447 Fair--Rite C1 6.8 F, 50 V Chip Capacitor C4532X7R1H685K TDK C2 27 pF Chip Capacitor ATC100B270JT500XT ATC C3, C7, C8, C9, C10, C11, C12 1000 pF Chip Capacitors ATC100B102JT50XT ATC C4 39 pF Mica Capacitor MIN02--002DC390J--F Cornell Dubilier C5 3 pF Chip Capacitor ATC100B3R0CT500XT ATC C15, C22 10K pF Chip Capacitors ATC200B103KT50XT ATC C16, C23 1 F, 100 V Chip Capacitors C3225JB2A105KT TDK C17, C24 10 F, 100 V Chip Capacitors C5750X7S2A106MT TDK C18, C19, C20, C21 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp L1 39 nH Inductor 1812SMS--39NJLC Coilcraft L2, L3 2.5 nH Inductors A01TKLC Coilcraft L4, L5 7 Turn, #16 AWG, ID = 0.3 Inductors Copper Wire Q1 RF Power LDMOS Transistor MRFE6VP61K25HR6 Freescale R1 11 , 1/4 W Chip Resistor CRCW120611R0FKEA Vishay T1 Balun TUI--9 Comm Concepts Coax1, Coax2 Flex Cables (12 ) 5.9 TC--12 Comm Concepts Coax3 Coax Cable, Quickform 50 , 8.7 SUCOFORM 250--01 Huber+Suhner PCB 0.030, r = 3.5 TC--350 Arlon Heatsink NI--1230 Copper Heatsink C193X280T970 Machine Shop MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 9 10 L1 B1 R1 C2 C3 L3 L2 B3 C4 C22 COAX2 COAX1 C23 C16 C24 C17 C12 C11 C10 C9 C8 C7 C18 C19 + C21 C20 + VDD VDD COAX3 Figure 14. MRFE6VP61K25HR6(HSR6) 87.5--108 MHz FM Broadcast Reference Circuit Schematic T1 B2 C15 + RF INPUT VGS C1 + MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. C5 RF OUTPUT TYPICAL CHARACTERISTICS — 87.5--108 MHz FM BROADCAST REFERENCE CIRCUIT 30 108 MHz 90 98 MHz Gps, POWER GAIN (dB) 87.5 MHz 28 70 Gps 27 60 26 50 25 108 MHz 98 MHz 24 D 87.5 MHz 23 40 40 30 VDD = 50 Vdc, IDQ = 200 mA 100 D, DRAIN EFFICIENCY (%) 80 29 20 2000 1000 Pout, OUTPUT POWER (WATTS) Figure 15. Power Gain and Drain Efficiency versus Output Power VDD = 50 Vdc, IDQ = 200 mA, Pout = 1100 W CW f MHz Zsource  Zload  87.5 2.20 + j6.70 4.90 + j2.90 98 2.30 + j6.90 4.10 + j2.50 108 2.30 + j7.00 4.40 + j3.60 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50  Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + -Zsource Device Under Test -- Output Matching Network 50  + Zload Figure 16. Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load Impedance MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 11 144--148 MHz REFERENCE CIRCUIT COAX1 C15 C16 C17 C1 + C18 COAX3 B1 C3 L2 R1 C19 C20 T1 L1 C7 C8 C9 C4 C10 C11 C5 C6 C12 C14 C13 MRFE6VP61K25H Rev. 2 *C7, C8, C9, C10, C11, and C12 are mounted vertically. Note: Component number C2 is not used. COAX2 Figure 17. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Layout Table 9. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Component Designations and Values Part Description Part Number Manufacturer B1 95 , 100 MHz Long Ferrite Bead 2743021447 Fair--Rite C1 6.8 F, 50 V Chip Capacitor C4532X7R1H685K TDK C3, C5, C7, C8, C9, C10, C11, C12, C13, C15 1000 pF Chip Capacitors ATC100B102KT50XT ATC C4 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C6 470 pF Chip Capacitor ATC100B471JT200XT ATC C14, C16 1 F, 100 V Chip Capacitors C3225JB2A105KT TDK C17 2.2 F, 100 V Chip Capacitor HMK432B7225KM--T Taiyo Yuden C18 470 F, 100 V Electrolytic Capacitor MCGPR100V477M16X32--RH Multicomp C19, C20 15 pF Chip Capacitors ATC100B150JT500XT ATC L1 43 nH Inductor B10TJLC Coilcraft L2 7 Turn, #14 AWG, ID = 0.4 Inductor Handwound Freescale R1 11 , 1/4 W Chip Resistor CRCW120611R0FKEA Vishay T1 Balun TUI--9 Comm Concepts Coax1, Coax2 Flex Cables, 10.2 , 4.7 TC--12 Comm Concepts Coax3 Coax Cable, 50 , 6.7 SUCOFORM250--01 Huber+Suhner PCB 0.030”, r = 3.50 TC--350 Arlon MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 12 RF Device Data Freescale Semiconductor, Inc. RF Device Data Freescale Semiconductor, Inc. VGS RF INPUT C1 L1 B1 R1 C2 C3 COAX2 COAX1 C6 C5 L2 C13 C19 C20 COAX3 C15 C16 C17 C14 C12 C11 C10 C9 C7 C8 Figure 18. MRFE6VP61K25HR6(HSR6) 144--148 MHz Reference Circuit Schematic T1 C18 + MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 13 VDD C4 RF OUTPUT TYPICAL CHARACTERISTICS — 144--148 MHz REFERENCE CIRCUIT VDD = 50 Vdc, IDQ = 200 mA, Pout = 1100 W CW f MHz Zsource  Zload  144 1.6 + j5.0 3.9 + j1.5 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. = Test circuit impedance as measured from drain to drain, balanced configuration. Zload Input Matching Network 50  + Device Under Test Output Matching Network -- -Zsource 50  + Zload Figure 19. Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance 31 90 VDD = 50 Vdc, IDQ = 2500 mA, f = 144 MHz 29 80 70 Gps 28 60 27 50 26 40 D 25 D, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 30 30 24 50 100 20 2000 1000 Pout, OUTPUT POWER (WATTS) Figure 20. Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) 0 VDD = 50 Vdc f1 = 143.9 MHz, f2 = 144.1 MHz Two--Tone Measurement --20 --20 --30 IDQ = 2500 mA --40 --50 4500 mA 3rd Order --60 --70 3rd Order 7th Order --80 4500 mA --90 5th Order 7th Order --100 1 10 100 1000 2000 Pout, OUTPUT POWER (WATTS) PEP Figure 21. Intermodulation Distortion Products versus Output Power MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 14 RF Device Data Freescale Semiconductor, Inc. HARMONIC MEASUREMENTS Ref Lvl 1.5 E 04 W Marker 1 [T1] 1.018 kW 144.00000000 MHz RBW VBW SWT 77.7 dB Offset 1 3 MHz 3 MHz 5 ms RF Att B1 [T1] 1.018 kW A 144.00000000 MHz --42.07 dB 144.00501002 MHz --32.87 dB 288.00501002 MHz --37.26 dB 432.00501002 MHz 1SA --38.89 dB 576.00501002 MHz 1 [T1] 2 [T1] 3 [T1] 1 VIEW 4 [T1] 2 3 1 Center 525 MHz 95 MHz/ Unit 10 dB W EXT 4 144 MHz, 1 kW H2 H3 H4 H5 --42 dB --33 dB --37 dB --39 dB Span 950 MHz Figure 22. 144 MHz Harmonics @ 1 kW MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 15 PACKAGE DIMENSIONS MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 16 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 17 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 18 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 19 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 20 RF Device Data Freescale Semiconductor, Inc. MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 RF Device Data Freescale Semiconductor, Inc. 21 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Nov. 2010  Initial Release of Data Sheet 1 Jan. 2011  Fig. 1, Pin Connections, corrected pin 4 label from RFout/VGS to RFin/VGS, p. 1 2 May 2012  Added Application Circuits Typical Performance table, p. 1  Capable of Handling VSWR bullet: corrected 1250 Peak Output Power value to 1500 and converted to table, pp. 1, 3  Table 1, Max Ratings: final DC test specification for Drain--Source Voltage changed from +125 to +133 Vdc, p. 2  Table 3, ESD Protection Characteristics: added the device’s ESD passing level as applicable to each ESD class, p. 2  Table 4, Off Characteristics: final DC test specification for Drain--Source Breakdown Voltage minimum value changed from 125 to 133 Vdc, p. 2  Table 4, On Characteristics: added Forward Transconductance, p. 2  Fig. 10, MTTF versus Junction Temperature -- CW: MTTF end temperature on graph changed to match maximum operating junction temperature, p. 7  Added Fig. 12, Source and Load Impedances Optimized for IRL, Power and Efficiency — Push--pull, p. 8  Added Fig. 13, 87.5--108 MHz FM Broadcast Reference Circuit Component Layout, p. 9  Added Table 9, 87.5--108 MHz FM Broadcast Reference Circuit Component Designations and Values, p. 9  Added Fig. 14, 87.5--108 MHz FM Broadband Reference Circuit Schematic, p. 10  Added Fig. 15, Power Gain and Drain Efficiency versus Output Power (87.5--108 MHz), p. 11  Added Fig. 16, Series Equivalent 87.5--108 MHz FM Broadcast Reference Circuit Source and Load Impedance, p. 11  Added Fig. 17, 144--148 MHz Reference Circuit Component Layout, p. 12  Added Table 9, 144--148 MHz Reference Circuit Component Designations and Values, p. 12  Added Fig. 18, 144--148 MHz Reference Circuit Schematic, p. 13  Added Fig. 19, Series Equivalent 144--148 MHz Reference Circuit Source and Load Impedance, p. 14  Added Fig. 20, Power Gain and Drain Efficiency versus Output Power (144--148 MHz), p. 14  Added Fig. 21, Intermodulation Distortion Products versus Output Power (144--148 MHz), p. 14  Added Fig. 22, 144 MHz Harmonics @ 1 kW, p. 15 3 Oct. 2012  Added part number MRFE6VP61K25GSR5, p. 1  Added 2282--02 (NI--1230S--4 Gull) package isometric, p. 1, and Mechanical Outline, p. 20, 21 4 Mar. 2013  MRFE6VP61K25HR6 tape and reel option replaced with MRF6VP61K25HR5 per PCN15551.  Replaced Case Outline 98ASB16977C, Issue E with Issue F, p. 16, 17. Changed dimension C from 0.150--0.200 to CC 0.170--0.190.  Replaced Case Outline 98ARB18247C, Issue F with Issue G, p. 18, 19. Changed dimension C from 0.150--0.200 to CC 0.170--0.190. Added minimum Z dimension R0.00.  Replaced Case Outline 98ASA00459D, Issue O with Issue A, p. 20, 21. Changed dimension C from 0.150--0.200 to CC 0.170--0.190. Corrected positional tolerance for dimension S. 4.1 Mar. 2014  MRFE6VP61K25HR5 part added to data sheet device box, p. 1  MRFE6VP61K25HSR6 tape and reel option replaced with MRFE6VP61K25HSR5 per PCN15551. (Note: this copy updates the copy from Rev. 4 Revision History to accurately reflect the part number replacement in this data sheet as described in PCN15551.) MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 22 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 Document Number: RF Device DataMRFE6VP61K25H Rev. 4.1, 3/2014 Freescale Semiconductor, Inc. 23