MRFG35002N6AT1

Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single--Carrier W--CDMA Performance: VDD = 6 Volts, IDQ = 65 mA, Pout = 158 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10 dB Drain Efficiency — 26.5% ACPR @ 5 MHz Offset — --42 dBc in 3.84 MHz Channel Bandwidth • 1.5 Watts P1dB @ 3550 MHz, CW Features • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 3.5 GHz, 1.5 W, 6 V POWER FET GaAs PHEMT CASE 466--03, STYLE 1 PLD--1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 8 Vdc Gate--Source Voltage VGS --5 Vdc RF Input Power Pin 22 dBm Tstg --65 to +150 °C Tch 175 °C Symbol Value (2) Unit RθJC 13.7 °C/W Storage Temperature Range Channel Temperature (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2007--2009. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data MRFG35002N6AT1 1 Table 3. ESD Protection Characteristics Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD22--A113, IPC/JEDEC J--STD--020 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 1.7 — Adc Off State Leakage Current (VGS = --0.4 Vdc, VDS = 0 Vdc) IGSS — < 1.0 100 μAdc Off State Drain Current (VDS = 6 Vdc, VGS = --2.5 Vdc) IDSO — — 600 μAdc Off State Current (VDS = 28.5 Vdc, VGS = --2.5 Vdc) IDSX — < 1.0 9 mAdc Gate--Source Cut--off Voltage (VDS = 3.5 Vdc, IDS = 8.7 mA) VGS(th) --1.2 --0.95 --0.7 Vdc Quiescent Gate Voltage (VDS = 6 Vdc, ID = 65 mA) VGS(Q) --1.1 --0.85 --0.6 Vdc LIFETIME BUY Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, Pout = 158 mW Avg., f = 3550 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 8.5 10 — dB Drain Efficiency ηD 23 26.5 — % ACPR — --42 --38 dBc — W Adjacent Channel Power Ratio Typical RF Performance (In Freescale Test Fixture, 50 ohm system) VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Pout @ 1 dB Compression Point, CW P1dB — 1.5 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Methodology MRFG35002N6AT1 2 RF Device Data Freescale Semiconductor C8 C18 VBIAS VSUPPLY C12 C11 C10 C7 C9 C17 C16 C15 C14 C19 R1 C6 C20 C5 C22 RF INPUT Z6 Z1 Z2 Z3 Z5 Z4 C21 Z11 Z7 Z8 Z9 Z10 Z12 Z13 C1 C24 C3 LIFETIME BUY Z14 RF OUTPUT Z1, Z14 Z2 Z3 Z4 Z5 Z6, Z11 Z7 C4 C23 0.044″ x 0.125″ Microstrip 0.044″ x 0.481″ Microstrip 0.044″ x 0.076″ Microstrip 0.468″ x 0.025″ Microstrip 0.468″ x 0.341″ Microstrip 0.015″ x 0.549″ Microstrip 0.031″ x 0.259″ Microstrip Z8 Z9 Z10 Z12 Z13 PCB 0.420″ x 0.150″ Microstrip 0.150″ x 0.068″ Microstrip 0.290″ x 0.183″ Microstrip 0.044″ x 0.291″ Microstrip 0.044″ x 0.808″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 1. MRFG35002N6A Test Circuit Schematic Table 6. MRFG35002N6A Test Circuit Component Designations and Values Part Description C1, C24 13 pF Chip Capacitors C2 Not used C3 C4 Part Number Manufacturer ATC100A130JT500XT ATC 1.2 pF Chip Capacitor 08051J1R2BBS AVX 0.7 pF Chip Capacitor 08051J0R7BBS AVX C5, C6, C21, C22 5.6 pF Chip Capacitors 08051J5R6BBS AVX C7, C20 10 pF Chip Capacitors ATC100A100JT500XT ATC C8, C19 100 pF Chip Capacitors ATC100A101JT500XT ATC C9, C18 100 pF Chip Capacitors ATC100B101JT500XT ATC C10, C17 1000 pF Chip Capacitors ATC100B102JT50XT ATC C11, C16 0.01 μF Chip Capacitors ATC200B103KT50XT ATC C12, C15 39K pF Chip Capacitors ATC200B393KT50XT ATC C13, C14 10 μF Chip Capacitors GRM55DR61H106KA88B Murata C23 0.2 pF Chip Capacitor 08051J0R2BBS AVX R1 100 Ω, 1/4 W Chip Resistor CRCW12061000FKEA Vishay LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C13 MRFG35002N6AT1 RF Device Data Freescale Semiconductor 3 C12 C11 C10 C17 C18 C9 C16 C15 C14 C8 C7 R1 C5 C6 C19 C20 LIFETIME BUY C22 C21 C2 C1 C23 C3 C24 C4 MRFG35002N6A Rev. 3 Figure 2. MRFG35002N6A Test Circuit Component Layout LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C13 MRFG35002N6AT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 60 VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 50 40 10 Gps 8 30 20 6 ηD 4 10 2 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 12 0 14 16 18 20 22 24 26 28 Figure 3. Single--Channel W--CDMA Power Gain and Drain Efficiency versus Output Power 0 0 VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) --10 --5 --10 --20 IRL --30 --15 --40 --20 IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR --50 14 16 18 20 22 24 26 28 --25 Pout, OUTPUT POWER (dBm) Figure 4. Single--Channel W--CDMA Adjacent Channel Power Ratio and IRL versus Output Power 14 Gps, POWER GAIN (dB) 12 36 VDD = 6 Vdc, IDQ = 65 mA, Pout = 158 mW Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 10 34 32 Gps 8 30 6 28 ηD 4 26 2 3450 3500 3550 3600 24 3650 f, FREQUENCY (MHz) Figure 5. Single--Channel W--CDMA Power Gain and Drain Efficiency versus Frequency ηD, DRAIN EFFICIENCY (%) LIFETIME BUY Pout, OUTPUT POWER (dBm) LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 14 NOTE: Data is generated from the test circuit shown. MRFG35002N6AT1 RF Device Data Freescale Semiconductor 5 0 --10 --20 --5 --10 IRL --30 --15 --40 --20 ACPR --50 3400 3450 3500 3550 3600 3650 --25 3700 Figure 6. Single--Channel W--CDMA Adjacent Channel Power Ratio and IRL versus Frequency --5 60 VDD = 6 Vdc, IDQ = 65 mA, f = 3550 MHz Single--Carrier OFDM 802.16d, 64 QAM 3/4 7 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF --10 --15 50 40 --20 30 --25 20 ηD --30 10 EVM --35 14 16 18 0 20 22 24 26 28 Pout, OUTPUT POWER (dBm) Figure 7. Single--Channel OFDM Error Vector Magnitude and Drain Efficiency versus Output Power NOTE: Data is generated from the test circuit shown. ηD, DRAIN EFFICIENCY (%) EVM, ERROR VECTOR MAGNITUDE (dB) LIFETIME BUY f, FREQUENCY (MHz) LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 0 VDD = 6 Vdc, IDQ = 65 mA, Pout = 158 mW Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IRL, INPUT RETURN LOSS (dB) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) TYPICAL CHARACTERISTICS MRFG35002N6AT1 6 RF Device Data Freescale Semiconductor S11 S21 S12 f MHz |S11| ∠φ |S21| ∠φ |S12| 500 0.910 --175.1 5.223 82.8 550 0.911 --176.9 4.775 80.9 600 0.911 --178.5 4.396 650 0.911 --179.9 700 0.910 178.8 750 0.910 800 0.910 850 S22 ∠φ |S22| ∠φ 0.036 0.0 0.703 --176.6 0.036 --1.2 0.702 --177.9 79.1 0.036 --2.3 0.701 --179.1 4.078 77.4 0.037 --3.3 0.699 179.6 3.808 75.7 0.037 --4.4 0.698 178.5 177.7 3.574 74.0 0.037 --5.3 0.697 177.3 176.6 3.371 72.5 0.037 --6.2 0.696 176.1 0.910 175.7 3.191 70.9 0.037 --7.1 0.695 175.0 900 0.910 174.9 3.029 69.4 0.037 --7.8 0.694 173.8 950 0.910 174.2 2.883 67.9 0.037 --8.7 0.693 172.7 1000 0.909 173.4 2.748 66.3 0.037 --9.5 0.692 171.5 1050 0.910 172.7 2.632 65.0 0.037 --10.3 0.692 170.3 1100 0.910 172.1 2.520 63.5 0.038 --11.0 0.691 169.1 1150 0.909 171.4 2.421 62.0 0.038 --11.9 0.690 168.0 1200 0.910 170.8 2.329 60.6 0.038 --12.6 0.691 167.0 1250 0.909 170.1 2.246 59.2 0.038 --13.3 0.690 165.9 1300 0.908 169.5 2.168 57.8 0.038 --14.1 0.689 164.9 1350 0.907 168.8 2.097 56.4 0.038 --14.9 0.689 164.0 1400 0.907 168.1 2.030 54.9 0.038 --15.4 0.690 163.0 1450 0.907 167.2 1.968 53.5 0.038 --16.4 0.690 162.1 1500 0.906 166.3 1.911 52.0 0.038 --17.1 0.690 161.3 1550 0.904 163.0 1.874 50.4 0.039 --18.0 0.687 162.6 1600 0.903 162.2 1.823 49.0 0.039 --18.8 0.686 161.8 1650 0.903 161.3 1.775 47.6 0.039 --19.6 0.685 161.0 1700 0.903 160.5 1.729 46.2 0.039 --20.5 0.686 160.1 1750 0.902 159.8 1.686 44.7 0.039 --21.0 0.686 159.3 1800 0.902 158.9 1.645 43.3 0.039 --21.8 0.685 158.4 1850 0.901 158.1 1.607 41.9 0.039 --22.5 0.685 157.5 1900 0.901 157.4 1.570 40.5 0.039 --23.3 0.686 156.7 1950 0.902 156.6 1.535 39.1 0.039 --24.1 0.686 155.8 2000 0.901 155.9 1.502 37.7 0.039 --24.9 0.686 155.0 2050 0.901 155.1 1.470 36.3 0.039 --25.6 0.686 154.1 2100 0.901 154.3 1.441 34.9 0.040 --26.5 0.685 153.4 2150 0.906 153.3 1.415 33.5 0.040 --27.2 0.689 152.3 2200 0.900 152.8 1.388 32.0 0.040 --28.1 0.686 151.8 2250 0.900 151.9 1.364 30.6 0.040 --28.7 0.685 150.9 2300 0.899 151.0 1.342 29.2 0.040 --29.6 0.684 150.0 2350 0.898 150.2 1.321 27.7 0.040 --30.3 0.683 149.2 2400 0.899 149.3 1.302 26.2 0.040 --31.4 0.683 148.4 2450 0.897 148.4 1.284 24.8 0.041 --32.1 0.681 147.4 2500 0.896 147.4 1.268 23.3 0.041 --33.2 0.679 146.6 2550 0.896 146.5 1.254 21.8 0.041 --34.1 0.678 145.7 2600 0.893 145.4 1.240 20.2 0.041 --34.8 0.675 144.8 2650 0.894 144.5 1.227 18.7 0.042 --35.6 0.674 143.9 2700 0.891 143.4 1.216 17.2 0.042 --36.7 0.672 142.9 2750 0.891 142.4 1.206 15.6 0.042 --37.4 0.669 142.0 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 LIFETIME BUY Table 7. Common Source S--Parameters (VDD = 6 Vdc, IDQ = 65 mA, TA = 25°C, 50 Ohm System) (continued) MRFG35002N6AT1 RF Device Data Freescale Semiconductor 7 S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2800 0.890 141.2 1.197 14.0 0.043 --38.6 0.667 141.1 2850 0.887 140.1 1.189 12.4 0.043 --39.5 0.663 140.2 2900 0.888 138.9 1.182 10.8 0.043 --40.4 0.661 139.2 2950 0.886 137.6 1.175 9.1 0.044 --41.4 0.658 138.2 3000 0.886 136.4 1.170 7.5 0.044 --42.4 0.656 137.2 3050 0.885 135.1 1.163 5.8 0.045 --43.5 0.652 136.3 3100 0.882 133.8 1.159 4.1 0.045 --44.5 0.649 135.2 3150 0.881 132.5 1.155 2.4 0.046 --45.5 0.645 134.2 3200 0.879 131.1 1.151 0.7 0.046 --46.8 0.642 133.1 3250 0.877 129.8 1.148 --1.0 0.047 --47.7 0.638 132.0 3300 0.876 128.4 1.145 --2.7 0.047 --48.9 0.634 130.9 3350 0.875 127.0 1.143 --4.5 0.048 --50.0 0.630 129.8 3400 0.874 125.6 1.141 --6.3 0.048 --51.3 0.627 128.7 3450 0.873 124.1 1.139 --8.0 0.049 --52.4 0.624 127.5 3500 0.870 122.6 1.137 --9.8 0.049 --53.8 0.620 126.4 3550 0.869 121.1 1.134 --11.6 0.050 --55.0 0.616 125.2 3600 0.867 119.7 1.133 --13.4 0.050 --56.2 0.612 124.0 3650 0.867 118.1 1.131 --15.2 0.051 --57.3 0.609 122.8 3700 0.865 116.6 1.130 --17.0 0.051 --58.4 0.605 121.5 3750 0.863 115.0 1.128 --18.8 0.052 --59.5 0.602 120.2 3800 0.861 113.5 1.127 --20.7 0.052 --60.9 0.598 118.9 3850 0.860 111.9 1.126 --22.5 0.053 --62.1 0.595 117.6 3900 0.858 110.3 1.125 --24.4 0.053 --63.4 0.591 116.2 3950 0.856 108.6 1.124 --26.3 0.054 --64.5 0.588 114.9 4000 0.854 107.0 1.122 --28.3 0.054 --65.7 0.585 113.4 4050 0.853 105.3 1.122 --30.2 0.055 --67.0 0.582 112.0 4100 0.851 103.5 1.122 --32.1 0.055 --68.1 0.579 110.5 4150 0.849 101.7 1.121 --34.2 0.056 --69.5 0.575 109.0 4200 0.847 99.8 1.120 --36.2 0.057 --70.9 0.572 107.4 4250 0.845 97.9 1.119 --38.3 0.057 --72.4 0.569 105.9 4300 0.842 96.0 1.119 --40.4 0.057 --73.8 0.566 104.2 4350 0.841 94.1 1.119 --42.6 0.058 --75.2 0.563 102.4 4400 0.838 92.0 1.118 --44.7 0.058 --76.6 0.559 100.7 4450 0.836 89.9 1.118 --47.0 0.059 --78.4 0.557 98.8 4500 0.836 87.7 1.118 --49.3 0.060 --80.0 0.553 96.8 4550 0.832 85.3 1.116 --51.7 0.060 --81.7 0.550 94.8 4600 0.828 83.3 1.114 --54.0 0.061 --83.3 0.547 92.7 4650 0.830 80.6 1.114 --56.4 0.061 --85.0 0.542 90.5 4700 0.826 78.3 1.114 --58.8 0.062 --86.6 0.539 88.3 4750 0.830 75.9 1.111 --61.3 0.062 --88.6 0.535 85.9 4800 0.827 72.9 1.109 --64.0 0.063 --90.6 0.532 83.6 4850 0.827 70.4 1.107 --66.6 0.063 --92.6 0.529 81.0 4900 0.828 67.5 1.104 --69.2 0.064 --94.4 0.525 78.4 4950 0.824 64.8 1.099 --71.8 0.064 --96.4 0.522 75.8 5000 0.824 61.8 1.095 --74.6 0.064 --98.6 0.518 72.9 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 LIFETIME BUY Table 7. Common Source S--Parameters (VDD = 6 Vdc, IDQ = 65 mA, TA = 25°C, 50 Ohm System) (continued) MRFG35002N6AT1 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 0.146 3.71 A F 0.095 2.41 3 B D 1 2 R 0.115 2.92 0.115 2.92 L 0.020 0.51 4 0.35 (0.89) X 45_ 5 _ N K Q C 4 ZONE W 2 1 3 S G Y Y E NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE ZONE X VIEW Y--Y mm SOLDER FOOTPRINT P U H ZONE V inches 10_DRAFT CASE 466--03 ISSUE D PLD--1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 MRFG35002N6AT1 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION REVISION HISTORY The following table summarizes revisions to this document. Date 0 Dec. 2007 • Initial Release of Data Sheet 1 Dec. 2008 • Removed ”Operating Case Temperature Range” from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1 2 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 2 LIFETIME BUY Revision Description LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers MRFG35002N6AT1 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007--2009. All rights reserved. MRFG35002N6AT1 Document Number: RF Device Data MRFG35002N6A Rev. 2, 6/2009 Freescale Semiconductor 11