MRFG35003ANT1

Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. • Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 55 mA, Pout = 300 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 10.8 dB Drain Efficiency — 24.5% ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth • 3 Watts P1dB @ 3550 MHz, CW • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. 3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS 15 Vdc Gate- Source Voltage VGS -5 Vdc RF Input Power Pin 29 dBm Tstg - 65 to +150 °C Tch 175 °C Symbol Value (2) Unit RθJC 15.9 °C/W Storage Temperature Range Channel Temperature (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved. RF Device Data Freescale Semiconductor MRFG35003ANT1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 °C Per JESD22 - A113, IPC/JEDEC J - STD - 020 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 1.3 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS —