MRFG35010

Freescale Semiconductor Technical Data Document Number: MRFG35010 Rev. 9, 1/2008 MRFG35010R1 replaced by MRFG35010AR1. MRFG35010R1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 10 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 1 Watt Power Gain — 10 dB Efficiency — 30% • 10 Watts P1dB @ 3550 MHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. CASE 360D - 02, STYLE 1 NI - 360HF Table 1. Maximum Ratings Rating Symbol Value Unit VDSS 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 28.3 0.19 W W/°C Gate - Source Voltage VGS -5 Vdc RF Input Power Pin 33 dBm Tstg - 65 to +175 °C Tch 175 °C TC - 20 to +90 °C Symbol Value Unit RθJC 5.3 4.8 °C/W Drain - Source Voltage Storage Temperature Range Channel Temperature (1) Operating Case Temperature Range ARCHIVE INFORMATION ARCHIVE INFORMATION Designed for WLL/MMDS or UMTS driver applications with frequencies from 1800 to 3600 MHz. Device is unmatched and is suitable for use in Class AB or Class A linear base station applications. Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Class A Class AB 1. For reliable operation, the operating channel temperature should not exceed 150°C. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFG35010R1 1 Characteristic ARCHIVE INFORMATION Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 2.9 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS —