MRFG35010ANT1

Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 4, 8/2013 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB customer premise equipment (CPE) applications.  Typical Single--Carrier W--CDMA Performance: VDD = 12 Vdc, IDQ = 130 mA, 3.84 MHz Channel Bandwidth, Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Frequency (MHz) Pout (W) Gps (dB) ACPR (dBc) D (%) IRL (dB) 750 1 14.5 --44.0 24.0 --15 2140 1 13.0 --43.0 25.0 --14 2650 1 11.5 --43.0 30.0 --15 500--5000 MHz, 9 W, 12 V POWER FET GaAs pHEMT Features     9 Watts P1dB @ 3550 MHz, CW Excellent Phase Linearity and Group Delay Characteristics High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units, 16 mm Tape Width, 13--inch Reel. PLD--1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS 15 Vdc Gate--Source Voltage VGS --5 Vdc RF Input Power Pin 33 dBm Storage Temperature Range Tstg --65 to +150 C Channel Temperature (1) Tch 175 C Symbol Value (2) Unit RJC 6.5 C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 77C, 1 W CW Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2 Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) IV Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.  Freescale Semiconductor, Inc., 2006, 2008--2009, 2012--2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MRFG35010ANT1 1 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 2.9 — Adc Off State Leakage Current (VGS = --0.4 Vdc, VDS = 0 Vdc) IGSS —