Freescale Semiconductor
Technical Data
Document Number: MRFG35010A
Rev. 2, 12/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
MRFG35010AR1
Designed for WiMAX, WLL/MMDS or UMTS driver and final applications.
Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
use in Class AB or Class A linear base station applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ =
140 mA, Pout = 1 Watt Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain —10 dB
Drain Efficiency — 25%
ACPR @ 5 MHz Offset — - 43 dBc in 3.84 MHz Channel Bandwidth
• 10 Watts P1dB @ 3550 MHz, CW
• Excellent Phase Linearity and Group Delay Characteristics
• High Gain, High Efficiency and High Linearity
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
3.5 GHz, 10 W, 12 V
POWER FET
GaAs PHEMT
CASE 360D - 02, STYLE 1
NI - 360HF
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain - Source Voltage
Rating
VDSS
15
Vdc
Gate - Source Voltage
VGS
-5
Vdc
RF Input Power
Pin
33
dBm
Tstg
- 65 to +150
°C
Tch
175
°C
Symbol
Value (1, 2)
Storage Temperature Range
Channel Temperature
(1)
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81°C, 10 W CW
Case Temperature 79°C, 1 W CW
Class AB
Class A
RθJC
4.0
4.1
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1C (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
III (Minimum)
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
MRFG35010AR1
1
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Saturated Drain Current
(VDS = 3.5 Vdc, VGS = 0 Vdc)
Characteristic
IDSS
—
2.9
—
Adc
Off State Leakage Current
(VGS = - 0.4 Vdc, VDS = 0 Vdc)
IGSS
—
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