MRFG35010MT1

Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRFG35010MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor 3.5 GHz, 9 W, 12 V POWER FET GaAs PHEMT • Typical W - CDMA Performance: - 42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28% • 9 Watts P1dB @ 3.55 GHz • Excellent Phase Linearity and Group Delay Characteristics • High Gain, High Efficiency and High Linearity • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Symbol Value Unit VDSS 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 22.7(2) 0.15(2) W W/°C Gate- Source Voltage VGS -5 Vdc RF Input Power Pin 33 dBm Storage Temperature Range Tstg - 65 to +150 °C Tch 175 °C TC - 20 to +85 °C Symbol Value Unit RθJC 6.6(2) °C/W Drain- Source Voltage Channel Temperature(1) Operating Case Temperature Range Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case ARCHIVE INFORMATION ARCHIVE INFORMATION Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. This device is unmatched and is suitable for use in Class AB linear base station applications. Table 3. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C 1. For reliable operation, the operating channel temperature should not exceed 150°C. 2. Simulated.  Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRFG35010MT1 1 ARCHIVE INFORMATION Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 2.9 — Adc Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) IGSS — < 1.0 100 µAdc Off State Drain Current (VDS = 12 Vdc, VGS = - 1.9 Vdc) IDSO — 0.1 1.0 mAdc Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) IDSX — 2.0 15 mAdc Gate- Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) VGS(th) - 1.2 - 1.0 - 0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) VGS(Q) - 1.2 - 0.95 - 0.7 Vdc Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Gps 9.0 10 — dB Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) P1dB — 9 — W hD 23 28 — % ACPR — - 43 - 40 dBc Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg., f = 3.55 GHz) Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W - CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ARCHIVE INFORMATION Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) MRFG35010MT1 2 RF Device Data Freescale Semiconductor VSUPPLY VBIAS C11 C10 C9 C8 C7 C6 C5 C18 C4 C17 C16 C15 C13 C12 C19 Z9 Z12 R1 RF INPUT RF OUTPUT Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z10 Z11 Z13 Z14 Z15 C20 C3 C1 C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8, Z10 Z9 Z17 Z16 C22 0.045″ x 0.689″ Microstrip 0.045″ x 0.089″ Microstrip 0.020″ x 0.360″ Microstrip 0.045″ x 0.029″ Microstrip 0.045″ x 0.061″ Microstrip 0.045″ x 0.055″ Microstrip 0.300″ x 0.125″ Microstrip 0.146″ x 0.070″ Microstrip 0.025″ x 0.485″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 PCB C21 0.400″ x 0.215″ Microstrip 0.025″ x 0.497″ Microstrip 0.025″ x 0.271″ Microstrip 0.025″ x 0.363″ Microstrip 0.025″ x 0.041″ Microstrip 0.045″ x 0.050″ Microstrip 0.045″ x 0.467″ Microstrip Rogers 4350, 0.020″, εr = 3.5 Figure 1. 3.5 GHz Test Circuit Schematic Table 5. 3.5 GHz Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C21, C22 0.5 pF Chip Capacitors 08051J0R5BBT AVX C2 0.2 pF Chip Capacitor 06035J0R2BBT AVX C3 0.5 pF Chip Capacitor 06035J0R5BBT AVX C4, C19, C20 6.8 pF Chip Capacitors 08051J6R8BBT AVX C5, C18 10 pF Chip Capacitors 100A100JP150X ATC C6, C17 100 pF Chip Capacitors 100A101JP150X ATC C7, C16 100 pF Chip Capacitors 100B101JP500X ATC C8, C15 1000 pF Chip Capacitors 100B102JP50X ATC C9, C14 0.1 µF Chip Capacitors CDR33BX104AKWS Kemet C10, C13 39K pF Chip Capacitors 200B393KP50X ATC C11, C12 10 µF Chip Capacitors GRM55DR61H106KA88B Kemet R1 47 Ω Chip Resistor D55342M07B47JOR Newark ARCHIVE INFORMATION Z1 ARCHIVE INFORMATION C14 MRFG35010MT1 RF Device Data Freescale Semiconductor 3 C11 C10 C9 C14 C13 C8 C15 C7 C16 C6 C17 C5 C18 C12 R1 C4 C20 C3 C1 C2 C22 C21 MRFG35010XX, Rev. 5 Figure 2. 3.5 GHz Test Circuit Component Layout ARCHIVE INFORMATION ARCHIVE INFORMATION C19 MRFG35010MT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 IRL −10 −10 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.66 P/A 3GPP W−CDMA ΓS = 0.898é−134.03_, ΓL = 0.828é−140.67_ −20 −20 −30 −30 −40 −40 ACPR −50 −50 −60 1 0.1 10 Pout, OUTPUT POWER (WATTS) Figure 3. W - CDMA ACPR and Input Return Loss versus Output Power 60 VDS = 12 Vdc, IDQ = 180 mA f = 3.55 GHz, 8.5 P/A 3GPP W−CDMA ΓS = 0.898é−134.03_, ΓL = 0.828é−140.67_ 12 11.5 50 40 PAE 11 30 GT 10.5 20 10 10 9.5 0.1 1 PAE, POWER ADDED EFFICIENCY (%) G T , TRANSDUCER GAIN (dB) 12.5 0 10 Pout, OUTPUT POWER (WATTS) Figure 4. Transducer Gain and Power Added Efficiency versus Output Power NOTE: All data is referenced to package lead interface. ΓS and ΓL are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. ARCHIVE INFORMATION −60 ARCHIVE INFORMATION ACPR (dBc) IRL, INPUT RETURN LOSS (dB) 0 MRFG35010MT1 RF Device Data Freescale Semiconductor 5 S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0.5 0.946 - 177.11 4.710 82.28 0.016 8.19 0.759 - 179.39 0.55 0.945 - 178.28 4.303 80.79 0.016 7.57 0.758 - 179.99 0.6 0.944 - 179.44 3.963 79.23 0.016 7.60 0.758 179.39 0.65 0.945 179.50 3.674 77.69 0.016 7.44 0.758 178.74 0.7 0.945 178.60 3.427 76.28 0.016 7.44 0.757 177.98 0.75 0.944 177.66 3.211 74.83 0.016 7.21 0.757 177.28 0.8 0.945 176.74 3.023 73.24 0.017 7.65 0.756 176.57 0.85 0.945 175.95 2.853 71.74 0.017 7.16 0.756 175.75 0.9 0.944 175.17 2.705 70.36 0.017 7.34 0.756 174.99 0.95 0.945 174.36 2.570 68.88 0.017 7.31 0.755 174.18 1 0.945 173.63 2.447 67.47 0.017 7.08 0.755 173.33 1.05 0.944 172.90 2.337 66.06 0.017 7.29 0.756 172.51 1.1 0.944 172.09 2.234 64.52 0.017 7.56 0.756 171.82 1.15 0.944 171.29 2.139 63.11 0.017 7.46 0.756 171.01 1.2 0.944 170.57 2.052 61.73 0.017 7.43 0.757 170.22 1.25 0.943 169.71 1.971 60.26 0.017 7.47 0.757 169.52 1.3 0.944 168.85 1.894 58.81 0.017 7.28 0.757 168.83 1.35 0.940 168.20 1.823 57.49 0.017 7.56 0.755 168.39 1.4 0.946 167.07 1.754 56.13 0.017 7.92 0.762 167.55 1.45 0.943 166.35 1.691 54.75 0.018 7.59 0.759 167.32 1.5 0.944 163.30 1.626 53.36 0.017 7.06 0.762 169.20 1.55 0.943 162.54 1.573 52.16 0.017 7.24 0.763 168.75 1.6 0.942 161.81 1.523 50.87 0.017 7.48 0.764 168.22 1.65 0.945 161.17 1.474 49.56 0.018 7.46 0.765 167.71 1.7 0.946 160.55 1.429 48.35 0.017 7.46 0.766 167.18 1.75 0.945 160.01 1.387 47.14 0.018 7.84 0.767 166.73 1.8 0.945 159.48 1.348 45.88 0.018 7.89 0.767 166.15 1.85 0.947 159.00 1.310 44.70 0.018 7.97 0.768 165.58 1.9 0.946 158.52 1.274 43.55 0.018 7.87 0.770 165.10 1.95 0.945 158.06 1.240 42.30 0.018 7.89 0.769 164.54 2 0.948 157.71 1.209 41.23 0.018 7.61 0.771 164.05 2.05 0.947 157.30 1.179 40.16 0.018 7.78 0.772 163.59 2.1 0.947 156.92 1.152 39.09 0.018 7.65 0.773 163.12 2.15 0.948 156.58 1.127 37.97 0.018 7.40 0.773 162.56 2.2 0.948 156.32 1.102 36.90 0.019 7.22 0.773 162.01 2.25 0.948 156.04 1.079 35.82 0.019 6.98 0.775 161.53 2.3 0.949 155.73 1.058 34.70 0.019 7.24 0.775 161.05 2.35 0.949 155.33 1.037 33.62 0.019 7.52 0.775 160.43 2.4 0.948 154.99 1.019 32.54 0.019 7.60 0.776 159.99 2.45 0.948 154.57 1.002 31.44 0.019 7.49 0.777 159.53 2.5 0.948 154.13 0.986 30.35 0.019 7.69 0.776 158.91 2.55 0.946 153.68 0.971 29.28 0.019 8.05 0.777 158.40 2.6 0.946 153.15 0.957 28.12 0.020 8.01 0.777 157.88 2.65 0.946 152.54 0.943 26.91 0.020 8.01 0.776 157.34 2.7 0.945 151.98 0.930 25.73 0.020 7.82 0.777 156.80 2.75 0.943 151.22 0.918 24.52 0.021 7.27 0.778 156.36 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA MRFG35010MT1 6 RF Device Data Freescale Semiconductor S11 S21 S12 S22 f GHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2.8 0.943 150.66 0.906 23.27 0.021 6.42 0.776 155.80 2.85 0.943 149.88 0.894 22.02 0.022 5.21 0.777 155.28 2.9 0.942 149.16 0.883 20.80 0.021 4.17 0.778 154.81 2.95 0.942 148.32 0.872 19.56 0.021 4.03 0.778 154.25 3 0.943 147.41 0.862 18.28 0.021 3.53 0.778 153.67 3.05 0.942 146.51 0.853 16.96 0.022 3.11 0.780 153.18 3.1 0.940 145.45 0.842 15.64 0.022 2.65 0.780 152.64 3.15 0.940 144.41 0.833 14.29 0.022 2.43 0.779 152.04 3.2 0.941 143.33 0.823 13.00 0.022 2.48 0.782 151.43 3.25 0.938 142.25 0.814 11.67 0.022 2.48 0.781 150.92 3.3 0.939 141.15 0.804 10.32 0.022 2.08 0.781 150.33 3.35 0.939 140.02 0.795 8.97 0.022 1.99 0.782 149.74 3.4 0.938 138.89 0.785 7.61 0.022 2.11 0.783 149.19 3.45 0.938 137.88 0.776 6.26 0.023 2.05 0.782 148.72 3.5 0.939 136.68 0.767 4.96 0.023 1.79 0.783 147.97 3.55 0.938 135.63 0.757 3.67 0.023 1.56 0.785 147.40 3.6 0.938 134.63 0.748 2.34 0.024 1.02 0.783 146.88 3.65 0.939 133.60 0.739 1.04 0.024 0.44 0.783 146.20 3.7 0.938 132.68 0.729 - 0.25 0.024 - 0.54 0.785 145.61 3.75 0.937 131.84 0.720 - 1.47 0.024 - 1.30 0.785 145.17 3.8 0.937 130.92 0.711 - 2.69 0.024 - 1.98 0.785 144.52 3.85 0.938 130.07 0.702 - 3.89 0.024 - 2.38 0.786 143.87 3.9 0.938 129.29 0.694 - 5.07 0.024 - 2.22 0.787 143.24 3.95 0.939 128.60 0.686 - 6.23 0.024 - 2.00 0.787 142.61 4 0.939 127.88 0.678 - 7.34 0.025 - 1.80 0.788 141.94 4.05 0.939 127.23 0.671 - 8.46 0.025 - 2.04 0.789 141.34 4.1 0.941 126.66 0.664 - 9.57 0.025 - 2.17 0.789 140.69 4.15 0.941 126.23 0.658 - 10.65 0.025 - 2.15 0.788 140.01 4.2 0.940 125.73 0.651 - 11.72 0.026 - 2.48 0.789 139.31 4.25 0.939 125.28 0.645 - 12.82 0.026 - 2.81 0.789 138.65 4.3 0.940 124.85 0.640 - 13.86 0.026 - 2.79 0.788 137.91 4.35 0.940 124.45 0.635 - 14.92 0.027 - 2.73 0.789 137.16 4.4 0.939 124.01 0.630 - 16.00 0.027 - 3.22 0.789 136.45 4.45 0.939 123.63 0.627 - 17.01 0.028 - 3.26 0.788 135.67 4.5 0.939 123.27 0.623 - 18.03 0.028 - 3.64 0.788 134.88 4.55 0.937 122.84 0.620 - 19.03 0.029 - 3.74 0.789 134.16 4.6 0.937 122.32 0.619 - 20.17 0.029 - 4.57 0.788 133.36 4.65 0.937 121.88 0.618 - 21.26 0.030 - 5.02 0.788 132.50 4.7 0.936 121.36 0.617 - 22.45 0.030 - 6.01 0.788 131.67 4.75 0.935 120.72 0.615 - 23.68 0.031 - 7.22 0.787 130.83 4.8 0.935 120.04 0.614 - 24.90 0.031 - 7.64 0.786 129.91 4.85 0.934 119.35 0.613 - 26.12 0.031 - 8.05 0.786 129.03 4.9 0.932 118.49 0.613 - 27.41 0.031 - 8.39 0.786 128.20 4.95 0.931 117.69 0.614 - 28.72 0.032 - 8.32 0.785 127.24 5 0.929 116.74 0.614 - 30.05 0.033 - 8.48 0.786 126.32 ARCHIVE INFORMATION ARCHIVE INFORMATION Table 6. Class AB Common Source S - Parameters at VDS = 12 Vdc, IDQ = 180 mA (continued) MRFG35010MT1 RF Device Data Freescale Semiconductor 7 NOTES MRFG35010MT1 8 RF Device Data Freescale Semiconductor NOTES MRFG35010MT1 RF Device Data Freescale Semiconductor 9 NOTES MRFG35010MT1 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 0.146 3.71 A F 0.095 2.41 3 B D 1 2 0.35 (0.89) X 45_" 5 _ N K ÉÉÉ ÉÉ ÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉÉÉÉÉ ÉÉÉ ÉÉ ÉÉ ÉÉÉÉÉÉÉ C 4 1 2 3 S ZONE X mm SOLDER FOOTPRINT P U H G inches 10_DRAFT Q ZONE W 0.115 2.92 L 0.020 0.51 4 ZONE V R 0.115 2.92 Y Y E NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE VIEW Y - Y CASE 466 - 03 ISSUE D PLD - 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 MRFG35010MT1 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRFG35010MT1 Document Number: MRFG35010MT1 Rev. 5, 2/2006 12 RF Device Data Freescale Semiconductor