NXP Semiconductors
Technical Data
Document Number: MRFX1K80N
Rev. 0, 04/2018
RF Power LDMOS Transistors
MRFX1K80N
MRFX1K80GN
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
Typical Performance
Frequency
(MHz)
Signal Type
VDD
(V)
87.5–108 (1,2)
CW
230 (3)
Pulse
(100 sec, 20% Duty Cycle)
Pout
(W)
Gps
(dB)
D
(%)
60
1670 CW
23.8
83.5
65
1800 Peak
24.4
75.7
Load Mismatch/Ruggedness
Frequency
(MHz)
230 (3)
Signal Type
VSWR
Pulse
(100 sec, 20%
Duty Cycle)
> 65:1 at all
Phase Angles
Pin
(W)
Test
Voltage
14 W Peak
(3 dB
Overdrive)
65
No Device
Degradation
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 VDD operation
Characterized from 30 to 65 V for extended power range
Lower thermal resistance package
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage range for
improved Class C operation
Included in NXP product longevity program with assured supply for a minimum
of 15 years after launch
2018 NXP B.V.
RF Device Data
NXP Semiconductors
OM--1230--4L
PLASTIC
MRFX1K80N
Result
1. Measured in 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Measured in 230 MHz narrowband production test fixture (page 11).
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
1.8–400 MHz, 1800 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
OM--1230G--4L
PLASTIC
MRFX1K80GN
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
MRFX1K80N MRFX1K80GN
1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
–0.5, +179
Vdc
Gate--Source Voltage
VGS
–6.0, +10
Vdc
Storage Temperature Range
Tstg
– 65 to +150
C
Case Operating Temperature Range
TC
–40 to +150
C
Operating Junction Temperature Range
(1,2)
TJ
–40 to +225
C
PD
3333
16.7
W
W/C
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
CW: Case Temperature 112C, 1800 W CW, 65 Vdc, IDQ(A+B) = 150 mA, 98 MHz
RJC
0.06
C/W
Thermal Impedance, Junction to Case
Pulse: Case Temperature 77C, 1800 W Peak, 100 sec Pulse Width, 20% Duty Cycle,
65 Vdc, IDQ(A+B) = 100 mA, 230 MHz
ZJC
0.009
C/W
Total Device Dissipation @ TC = 25C
Derate above 25C
Table 2. Thermal Characteristics
Characteristic
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2, passes 2500 V
Charge Device Model (per JESD22--C101)
C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
—
1
Adc
179
193
—
Vdc
Off Characteristics (4)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(VGS = 0 Vdc, ID = 100 mAdc)
V(BR)DSS
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 179 Vdc, VGS = 0 Vdc)
IDSS
—
—
100
mAdc
Gate Threshold Voltage (4)
(VDS = 10 Vdc, ID = 740 Adc)
VGS(th)
2.1
2.5
2.9
Vdc
Gate Quiescent Voltage
(VDD = 65 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test)
VGS(Q)
2.5
2.9
3.3
Vdc
Drain--Source On--Voltage (4)
(VGS = 10 Vdc, ID = 2.76 Adc)
VDS(on)
—
0.21
—
Vdc
gfs
—
44.7
—
S
On Characteristics
Forward Transconductance (4)
(VDS = 10 Vdc, ID = 43 Adc)
1.
2.
3.
4.
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at http://www.nxp.com/RF/calculators.
Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
Each side of device measured separately.
(continued)
MRFX1K80N MRFX1K80GN
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Transfer Capacitance
(VDS = 65 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
5.6
—
pF
Output Capacitance
(VDS = 65 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
216
—
pF
Input Capacitance
(VDS = 65 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Ciss
—
765
—
pF
Dynamic Characteristics (1)
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD = 65 Vdc, IDQ(A+B) = 100 mA, Pout = 1800 W Peak
(360 W Avg.), f = 230 MHz, 100 sec Pulse Width, 20% Duty Cycle
Power Gain
Gps
23.0
24.4
26.0
dB
Drain Efficiency
D
71.0
75.7
—
%
Input Return Loss
IRL
—
–16
–9
dB
Table 6. Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
230
Signal Type
VSWR
Pin
(W)
Pulse
(100 sec, 20% Duty Cycle)
> 65:1 at all
Phase Angles
14 W Peak
(3 dB Overdrive)
Test Voltage, VDD
Result
65
No Device Degradation
Table 7. Ordering Information
Device
MRFX1K80NR5
MRFX1K80GNR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--Reel
Package
OM--1230--4L
OM--1230G--4L
1. Each side of device measured separately.
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
2000
1.08
1000
NORMALIZED VGS(Q)
C, CAPACITANCE (pF)
Coss
100
10
1
0
10
20
30
40
50
60
1.02
IDQ(A+B) = 100 mA
1000 mA
1500 mA
1
0.98
0.96
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
1.04
VDD = 65 Vdc
500 mA
1.06
Ciss
0.94
70
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 2. Capacitance versus Drain--Source Voltage
0.92
–50
–25
0
25
50
75
100
TC, CASE TEMPERATURE (C)
IDQ (mA)
Slope (mV/C)
100
–3.14
500
–2.88
1000
–2.75
1500
–2.65
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
MRFX1K80N MRFX1K80GN
4
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9 5.1 (7.3 cm 13.0 cm)
Table 8. 87.5–108 MHz Broadband Performance (In NXP Reference Circuit, 50 ohm system)
IDQ(A+B) = 200 mA, Pin = 7 W, CW
Frequency
(MHz)
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
87.5
60
1580
23.5
84.6
98
60
1670
23.8
83.5
108
60
1600
23.6
80.6
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
5
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9 5.1 (7.3 cm 13.0 cm)
D94850
C22
C25
C6 C7
C28
C26
C21
C27
C5
L4
L1
R2
C20
C19
C18
C17
L3
C11
C4
C3
C16
Q1
R1
C24
C1
C2
L2
C23*
C15*
R3
C14
C8
C9 C10
*C15 and C23 are mounted vertically.
Note: Component numbers C12 and C13 are not used.
MRFE6VP61K25N
MRF1K50N
MRFX1K80N
Rev. 0
0.34
(9)
0.45
(11)
0.22
(6)
L3 total wire length = 1.7 (43 mm)
Inches
(mm)
Figure 4. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Layout
Figure 5. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Layout – Bottom
MRFX1K80N MRFX1K80GN
6
RF Device Data
NXP Semiconductors
Table 9. MRFX1K80N 87.5–108 MHz Broadband Reference Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C3, C6, C9, C18, C19,
C20, C21, C22
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C2
33 pF Chip Capacitor
ATC100B330JT500XT
ATC
C4, C5, C8
10,000 pF Chip Capacitor
ATC200B103KT50XT
ATC
C7, C10, C15, C16, C17, C23
470 pF Chip Capacitor
ATC100B471JT200XT
ATC
C11
100 pF, 300 V Mica Capacitor
MIN02-002EC101J-F
CDE
C14, C24
12 pF Chip Capacitor
ATC100B120GT500XT
ATC
C25, C26, C27
220 F, 100 V Electrolytic Capacitor
EEV-FC2A221M
Panasonic--ECG
C28
22 F, 35 V Electrolytic Capacitor
UUD1V220MCL1GS
Nichicon
L1, L2
17.5 nH Inductor, 6 Turns
B06TJLC
Coilcraft
L3
1.5 mm Non--Tarnish Silver Plated Copper Wire,
Total Wire Length = 1.7/43 mm
SP1500NT-001
Scientific Wire Company
L4
22 nH Inductor
1212VS-22NMEB
Coilcraft
Q1
RF Power LDMOS Transistor
MRFX1K80N
NXP
R1
10 , 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
R2, R3
33 , 2 W Chip Resistor
1-2176070-3
TE Connectivity
Thermal Pad
TG Series Soft Thermal Conductive Pad
TG6050-150-150-5.0-0
t-Global Technology
PCB
Rogers TC350 0.030, r = 3.5
D94850
MTL
Note: Refer to MRFX1K80N’s printed circuit boards and schematics to download the 87.5–108 MHz baseplate drawing.
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
7
TYPICAL CHARACTERISTICS – 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
27
85
D
80
25
Gps
24
75
70
23
Pout
22
1700
21
1600
20
1500
19
18
87
VDD = 60 Vdc, Pin = 7 W, lDQ(A+B) = 200 mA
89
91
95
93
97
99
1400
Pout, OUTPUT
POWER (WATTS)
Gps, POWER GAIN (dB)
26
D, DRAIN
EFFICIENCY (%)
90
1300
107 109
101 103 105
f, FREQUENCY (MHz)
Figure 6. Power Gain, Drain Efficiency and CW Output Power
versus Frequency at a Constant Input Power
1800
98 MHz
Pout, OUTPUT POWER (WATTS)
1600
1400
108 MHz
87.5 MHz
1200
1000
800
600
400
200
0
VDD = 60 Vdc, IDQ(A+B) = 200 mA
0
4
2
8
6
10
12
Pin, INPUT POWER (WATTS)
Figure 7. CW Output Power versus Input Power and Frequency
90
34
80
30
108 MHz
28
60
Gps
26
50
87.5 MHz
98 MHz
24
40
108 MHz
22
20
70
98 MHz
D, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
D
f = 87.5 MHz
32
30
VDD = 60 Vdc, lDQ(A+B) = 200 mA
0
200
400
600
800
1000
1200 1400
1600
20
1800
Pout, OUTPUT POWER (WATTS)
Figure 8. Power Gain and Drain Efficiency versus
CW Output Power and Frequency
MRFX1K80N MRFX1K80GN
8
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT
Zo = 5
f = 87.5 MHz
f = 108 MHz
f = 108 MHz
f = 87.5 MHz
Zsource
Zload
f
MHz
Zsource
Zload
87.5
1.65 + j3.30
3.90 + j4.73
98
1.91 + j3.25
3.88 + j3.99
108
1.94 + j2.87
3.35 + j3.95
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload
50
= Test circuit impedance as measured
from drain to drain, balanced configuration.
Input
Matching
Network
+
Device
Under
Test
--
-Z
source
Output
Matching
Network
50
+
Z
load
Figure 9. Broadband Series Equivalent Source and Load Impedance – 87.5–108 MHz
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
9
HARMONIC MEASUREMENTS — 87.5–108 MHz
BROADBAND REFERENCE CIRCUIT
F1
H2
H3
H4
Amplitude (10 dB per Division)
Fundamental (F1)
87.5 MHz
175 MHz –31 dB
262.5 MHz –29 dB
350 MHz –53 dB
H3
H4
H2
(175 MHz) (262.5 MHz) (350 MHz)
–31 dB
–29 dB
–53 dB
H3
H2
H4
Center: 228.5 MHz
35 MHz
Span: 350 MHz
Figure 10. 87.5 MHz Harmonics @ 1500 W CW
MRFX1K80N MRFX1K80GN
10
RF Device Data
NXP Semiconductors
230 MHz NARROWBAND PRODUCTION TEST FIXTURE – 6.0 4.0 (15.2 cm 10.2 cm)
C26
C6
C9 C10
C27
C28
D96894
C12
C24
Coax1
Coax3
R1
L3
C2
C4*
C19*
L2
C3
C17*
C18*
C13 C14
C20*
C21*
C22*
C15 C16
CUT OUT AREA
C1
L1
C23
L4
R2
Coax4
Coax2
MRFX1K80N
Rev. 0
C5
C7 C8
C25
C 11
C29
C30
C31
*C4, C17, C18, C19, C20, C21 and C22 are mounted vertically.
aaa--029942
Figure 11. MRFX1K80N Narrowband Production Test Fixture Component Layout – 230 MHz
Table 10. MRFX1K80N Narrowband Production Test Fixture Component Designations and Values – 230 MHz
Part
Description
Part Number
Manufacturer
C1, C2, C3
22 pF Chip Capacitor
ATC100B220JT500XT
ATC
C4
27 pF Chip Capacitor
ATC100B270JT500XT
ATC
C5, C6
22 F, 35 V Tantalum Capacitor
T491X226K035AT
Kemet
C7, C9
0.1 F Chip Capacitor
CDR33BX104AKWS
AVX
C8, C10
220 nF Chip Capacitor
C1812C224K5RACTU
Kemet
C11, C12, C24, C25
1000 pF Chip Capacitor
ATC100B102JT50XT
ATC
C13
24 pF Chip Capacitor
ATC800R240JT500XT
ATC
C14, C15
20 pF Chip Capacitor
ATC800R200JT500XT
ATC
C16
22 pF Chip Capacitor
ATC800R220JT500XT
ATC
C17, C18, C19, C20, C21, C22
240 pF Chip Capacitor
ATC100B241JT200XT
ATC
C23
8.2 pF Chip Capacitor
ATC100B8R2CT500XT
ATC
C26, C27, C28, C29, C30, C31
470 F, 100 V Electrolytic Capacitor
MCGPR100V477M16X32-RH
Multicomp
Coax1, 2, 3, 4
25 Semi Rigid Coax Cable, 2.2 Shield Length
UT-141C-25
Micro--Coax
L1, L2
5 nH Inductor, 2 Turns
A02TKLC
Coilcraft
L3, L4
6.6 nH Inductor, 2 Turns
GA3093-ALC
Coilcraft
R1, R2
10 , 1/4 W Chip Resistor
CRCW120610R0JNEA
Vishay
PCB
Rogers AD255A 0.030, r = 2.55
D96894
MTL
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
11
TYPICAL CHARACTERISTICS — 230 MHz, TC = 25_C
NARROWBAND PRODUCTION TEST FIXTURE
Pout, OUTPUT POWER (WATTS) PEAK
2500
VDD = 65 Vdc, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
2000
Pin = 6.8 W
1500
1000
Pin = 3.4 W
500
0
0
0.5
1.5
1.0
2.0
2.5
3.5
3.0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 12. Output Power versus Gate--Source
Voltage at a Constant Input Power
27
63
60
57
54
51
48
80
25 IDQ(A+B) = 900 mA
70
600 mA
24
30
32
34
36
38
40
23
100 mA
22
P1dB
(W)
P3dB
(W)
230
1878
2143
50
Gps
D
21
300 mA
100 mA
40
900 mA
600 mA
30
20
19
100
42
Pin, INPUT POWER (dBm) PEAK
f
(MHz)
60
300 mA
20
28
90
VDD = 65 Vdc, f = 230 MHz
26 Pulse Width = 100 sec, 20% Duty Cycle
10
3000
1000
Pout, OUTPUT POWER (WATTS) PEAK
Figure 14. Power Gain and Drain Efficiency
versus Output Power and Quiescent Current
Figure 13. Output Power versus Input Power
90
–40_C
26
Gps
24
22
20
18
80
25_C
85_C 70
60
TC = –40_C
50
25_C
40
85_C
30
D
16
14
60
20
100
1000
10
3000
26
24
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
28 Pulse Width = 100 sec, 20% Duty Cycle
D, DRAIN EFFICIENCY (%)
30
22
20
50 V
18
65 V
40 V
16
14
55 V
60 V
VDD = 30 V
0
500
IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
1000
1500
2000
Pout, OUTPUT POWER (WATTS) PEAK
Pout, OUTPUT POWER (WATTS) PEAK
Figure 15. Power Gain and Drain Efficiency
versus Output Power
Figure 16. Power Gain versus Output Power
and Drain--Source Voltage
2500
MRFX1K80N MRFX1K80GN
12
RF Device Data
NXP Semiconductors
D, DRAIN EFFICIENCY (%)
VDD = 65 Vdc, IDQ(A+B) = 100 mA, f = 230 MHz
Pulse Width = 100 sec, 20% Duty Cycle
Gps, POWER GAIN (dB)
Pout, OUTPUT POWER (dBm) PEAK
66
230 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
230
0.9 + j2.3
1.9 + j2.5
Zsource = Test fixture impedance as measured from
gate to gate, balanced configuration.
Zload
50
Input
Matching
Network
= Test fixture impedance as measured from
drain to drain, balanced configuration.
+
-Zsource
Device
Under
Test
--
Output
Matching
Network
50
+
Zload
Figure 17. Narrowband Series Equivalent Source and Load Impedance – 230 MHz
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
13
PACKAGE DIMENSIONS
MRFX1K80N MRFX1K80GN
14
RF Device Data
NXP Semiconductors
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
15
MRFX1K80N MRFX1K80GN
16
RF Device Data
NXP Semiconductors
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
17
MRFX1K80N MRFX1K80GN
18
RF Device Data
NXP Semiconductors
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
19
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
To Download Resources Specific to a Given Part Number:
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2018
Description
Initial release of data sheet
MRFX1K80N MRFX1K80GN
20
RF Device Data
NXP Semiconductors
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implementers to use NXP products. There are no express or implied copyright licenses
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including without limitation consequential or incidental damages. “Typical” parameters
that may be provided in NXP data sheets and/or specifications can and do vary in
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parameters, including “typicals,” must be validated for each customer application by
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E 2018 NXP B.V.
MRFX1K80N MRFX1K80GN
Document
Number:
RF
Device
Data MRFX1K80N
Rev. 0,Semiconductors
04/2018
NXP
21