Document Number: MW4IC2230
Freescale Semiconductor
Rev. 5, 5/2006
Replaced
by
MW4IC2230NBR1(GNBR1).
There
are
no
form,
fit
or
function
changes with this
Technical Data
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
ARCHIVE INFORMATION
The MW4IC2230M wideband integrated circuit is designed for W - CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Driver Application
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 =
60 mA, IDQ2 = 350 mA, Pout = 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
• Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
• Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
Pout.
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VRD1
VRG1
VDS2
VDS1
3 Stages IC
RFin
VDS3/RFout
VGS1
VGS2
VGS3
Quiescent Current
Temperature Compensation
Figure 1. Functional Block Diagram
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
GND
VDS2
VRD1
VRG1
VDS1
1
2
3
4
5
16
15
RFin
6
14
VDS3/
RFout
VGS1
VGS2
VGS3
GND
7
8
9
10
11
13
12
GND
GND
ARCHIVE INFORMATION
RF LDMOS Wideband Integrated
Power Amplifiers
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW4IC2230MBR1 MW4IC2230GMBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +65
Vdc
Gate- Source Voltage
VGS
- 0.5, +8
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Channel Temperature
TJ
200
°C
Input Power
Pin
20
dBm
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
RθJC
ARCHIVE INFORMATION
Stage 1
Stage 2
Stage 3
°C/W
10.5
5.1
2.3
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
2 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA, IDQ3 = 265 mA,
Pout = 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Gps
29
31.5
—
dB
Input Return Loss
IRL
—
- 25
- 10
dB
—
—
- 53.5
- 52
- 50
—
Adjacent Channel Power Ratio
ACPR
Pout = 0.4 W Avg.
Pout = 1.26 W Avg.
dBc
Typical Performances (In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) VDD = 28 Vdc, IDQ1 = 60 mA, IDQ2 = 350 mA,
IDQ3 = 265 mA, 2110 MHz
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