MW4IC915GNBR1

Freescale Semiconductor Technical Data MW4IC915N Rev. 8, 3/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915NB/GNB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi--stage structure. Its wideband On--Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N--CDMA and W--CDMA. Final Application • Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860--960 MHz) Power Gain — 30 dB Power Added Efficiency — 44% Driver Application • Typical GSM/GSM EDGE Performances: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 3 Watts Avg., Full Frequency Band (869--894 MHz and 921--960 MHz) Power Gain — 31 dB Power Added Efficiency — 19% Spectral Regrowth @ 400 kHz Offset = --65 dBc Spectral Regrowth @ 600 kHz Offset = --83 dBc EVM — 1.5% • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 15 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function • On--Chip Current Mirror gm Reference FET for Self Biasing Application(1) • Integrated ESD Protection • 200°C Capable Plastic Package • N Suffix Indicates Lead--Free Terminations. RoHS Compliant. • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel. VRD2 VRG2 VDS1 RFin VDS2/RFout VRD1 VRG1 VGS1 Quiescent Current Temperature Compensation VGS2 Figure 1. Functional Block Diagram MW4IC915NBR1 MW4IC915GNBR1 860 -- 960 MHz, 15 W, 26 V GSM/GSM EDGE, N--CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329--09 TO--272 WB--16 PLASTIC MW4IC915NBR1 CASE 1329A--04 TO--272 WB--16 GULL PLASTIC MW4IC915GNBR1 GND VRD2 VRG2 VDS1 VRD1 1 2 3 4 5 16 15 GND NC RFin 6 14 VRG1 VGS1 VGS2 NC GND RFout/ VDS2 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections 1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1987. © Freescale Semiconductor, Inc., 2006, 2011. All rights reserved. RF Device Data Freescale Semiconductor MW4IC915NBR1 MW4IC915GNBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5. +65 Vdc Gate--Source Voltage VGS --0.5. +15 Vdc Storage Temperature Range Tstg --65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Unit RθJC °C/W GSM Application (Pout = 15 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 7.3 1.7 GSM EDGE Application (Pout = 7.5 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 7.3 1.8 CDMA Application (Pout = 3.75 W CW) Stage 1, 26 Vdc, IDQ = 60 mA Stage 2, 26 Vdc, IDQ = 240 mA 7.4 1.9 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDS = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 15 W PEP, f1 = 960 MHz and f2 = 960.1 MHz, Two--Tone Power Gain Gps 29 31 — dB Power Added Efficiency PAE 29 31 — % Intermodulation Distortion IMD — --40 --29 dBc Input Return Loss IRL — --15 --10 dB 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) MW4IC915NBR1 MW4IC915GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz960 MHz Quiescent Current Accuracy over Temperature with 1.8 kΩ Gate Feed Resistors (--10 to 85°C) (1) ∆IQT — ±5 — % Gain Flatness in 40 MHz Bandwidth @ Pout = 3 W CW GF — 0.2 — dB Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 3 W CW Φ — ±0.6 — ° Delay — 2.5 — ns ∆Φ — ±15 — ° Delay @ Pout = 3 W CW Including Output Matching Part--to--Part Phase Variation @ Pout = 3 W CW Typical GSM/GSM EDGE Performances (In Freescale Reference Board) VDS = 26 V, IDQ1 = 60 mA, IDQ2 = 240 mA, 869 MHz