Freescale Semiconductor
Technical Data
Document Number: MW5IC970NBR1
Rev. 1, 5/2006
RF LDMOS Wideband 2 - Stage
Power Amplifiers
Designed for broadband commercial and industrial applications with frequencies from 132 MHz to 960 MHz. The high gain and broadband performance of
this device make it ideal for large - signal, common - source amplifier applications in 28 volt base station equipment. The device has a 2 - stage design with
off - chip matching for the input, interstage and output networks to cover the
desired frequency band.
• Typical Performance: 800 MHz, 28 Volts, IDQ1 = 80 mA,
IDQ2 = 650 mA, Pout = 70 Watts PEP
Power Gain — 30 dB
Drain Efficiency — 48%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 850 MHz, 70 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
• On - Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VRD2
Quiescent Current
Temperature Compensation
VRG2/VGS2
VRG1/VGS1
RFin1
VD2/RFout2
VRD1
VD1/RFout1
VD1/RFout1
MW5IC970NBR1
800 - 900 MHz, 70 W, 28 V
RF LDMOS WIDEBAND
2 - STAGE POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
GND
VRD2
VRG2/VGS2
VRG1/VGS1
RFin1
1
2
3
4
5
16
15
GND
NC
GND
6
14
VD2/
RFout2
VRD1
VD1/RFout1
VD1/RFout1
RFin2
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
RFin2
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MW5IC970NBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, + 65
Vdc
Gate- Source Voltage
VGS
- 0.5, + 15
Vdc
Storage Temperature Range
Tstg
- 65 to +200
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
°C/W
Final Application
(Pout = 70 W CW)
Stage 1, 28 Vdc, IDQ = 80 mA
Stage 2, 28 Vdc, IDQ = 650 mA
5.2
0.8
EDGE Application
(Pout = 35 W CW)
Stage 1, 28 Vdc, IDQ = 80 mA
Stage 2, 28 Vdc, IDQ = 650 mA
5.3
0.8
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28.5 Vdc, IDQ1 = 80 mA, IDQ2 = 650 mA, Pout = 70 W PEP,
f1 = 870.0 MHz, f2 = 870.1 MHz
Power Gain
Gps
26.5
30
34.5
dB
Drain Efficiency
ηD
40
48
—
%
Input Return Loss
IRL
—
- 12
- 10
dB
Intermodulation Distortion
IMD
—
- 33
- 28
dBc
Typical 800/900 MHz Performances (In Freescale 800/900 MHz Reference Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 80 mA, IDQ2 =
650 mA, 740 - 870 MHz, 870 - 960 MHz
Gain Flatness in 30 MHz Bandwidth @ Pout = 70 W CW
GF
—
2
—
dB
Gain Flatness in 30 MHz Instantaneous Bandwidth
@ Pout = 70 W CW
GF
—
0.2
—
dB
Delay
—
4.5
—
ns
ΔΦ
—
±15
—
°
Delay @ Pout = 70 W CW Including Output Matching
Part - to - Part Phase Variation @ Pout = 70 W CW
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC970NBR1
2
RF Device Data
Freescale Semiconductor
VBIAS
VD2
R6
F1
R4
R8
R5
R7
R3
R2
1
C18
C16
R1
C15
RF
INPUT
Z1
2
VG2R2
C17
VG1R1
Z2
Z3
3
C8
16
Quiescent Current
Temperature
Compensation
NC 15
4
Z6
5
C7
Z5
C2
6
C1
C9
Z7
C10
Z8
C12
Z9
RF
OUTPUT
14
C6
7
C13
C11
Z10
8
C5
C14
9
10
NC 13
11
12
Z11
Z4
C3
C4
F2
VD1
Z1
Z2
Z3
Z4
Z5
Z6
0.485″ x 0.066″ Microstrip
0.270″ x 0.040″ Microstrip
0.068″ x 0.020″ Microstrip
0.950″ x 0.040″ Microstrip
0.131″ x 0.233″ Microstrip
0.797″ x 0.050″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.040″ x 0.233″ Microstrip
0.450″ x 0.120″ Microstrip
0.100″ x 0.066″ Microstrip
1.000″ x 0.040″ Microstrip
0.148″ x 0.040″ Microstrip
Rogers 4350B, 0.030″, εr = 3.5
Figure 3. MW5IC970NBR1 Test Circuit Schematic
Table 6. MW5IC970NBR1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C10, C11
3.9 pF Chip Capacitor
600S3R9BT
ATC
C2
56 pF Chip Capacitor
600S560JW
ATC
C3, C8, C14, C15, C17
39 pF Chip Capacitors
GRM40001C0G390J050BD
Murata
C4, C9
10 μF Chip Capacitors
ECJ4YF1H106Z
Panasonic
C5
24 pF Chip Capacitor
600F240JT
ATC
C6, C7
15 pF Chip Capacitors
600F150JT
ATC
C12
4.7 pF Chip Capacitor
600F4R7BT
ATC
C13
0.4 pF Chip Capacitor
600F0R4BT
ATC
C16, C18, C19, C20
0.015 μF Chip Capacitors
GRM400X7R153J050BD
Murata
F1
5A Surface Mount Fuse
1FT5A
Little Fuse
F2
1A Surface Mount Fuse
1FT1A
Little Fuse
R1, R7
681 Ω, Chip Resistors
R2, R5
4.75 kΩ, Chip Resistors
R3, R4, R8
1.21 kΩ, Chip Resistors
R6
267 Ω, Chip Resistor
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
3
VD2
F1
VG2
C9
R6
VG1
C8
R8
R7
R4
R5
C18
C17
R3
R2
R1
C16
C15
C11
C13
C7
C10
C2
C6
C12
C1
C
C5
C14
C3
MW5IC970
VD1
C4
Rev. 1
F2
Figure 4. MW5IC970NBR1 Test Circuit Component Layout
MW5IC970NBR1
4
RF Device Data
Freescale Semiconductor
PAE, POWER ADDED EFFICIENCY (%)
Gps, POWER GAIN (dB)
60
60
PAE
40
40
Gps
20
20
VDD = 28.5 Vdc, Pout = 35 W (Avg.)
IDQ1 = 80 mA, IDQ2 = 650 mA
100 kHz Tone Spacing
0
0
IRL
−20
−20
IMD
−40
800
820
860
840
880
900
920
−40
960
940
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 5. Two - Tone Wideband Performance
@ Pout = 35 Watts (Avg.)
−10
IDQ2 = 975 mA
812 mA
650 mA
30
488 mA
29
28
VDD = 28.5 Vdc, IDQ1 = 80 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
325 mA
27
10
IMD, INTERMODULATION DISTORTION (dBc)
1
100
−20
−30
3rd Order
−40
−50
5th Order
7th Order
−60
−70
1
200
100
10
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−20
34
VDD = 28.5 Vdc, Pout = 35 W (PEP)
IDQ1 = 80 mA, IDQ2 = 650 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 870 MHz
−25
−30
32
−35
5th Order
−45
70
VDD = 28.5 Vdc, IDQ1 = 80 mA
IDQ2 = 650 mA, f = 870 MHz
7th Order
−50
1
10
25_C 60
85_C
50
Gps
30
28
TC = 25_C
40
85_C
26
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
200
30
20
24
PAE
22
−55
0.1
−30_C
−30_C
3rd Order
−40
300
Figure 6. Two - Tone Power Gain versus
Output Power
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
31
VDD = 28.5 Vdc
IDQ1 = 80 mA, IDQ2 = 650 mA
f1 = 870 MHz, f2 = 870.1 MHz
Two−Tone Measurements
100 kHz Tone Spacing
20
0.1
1
10
10
100
PAE, POWER ADDED EFFICIENCY (%)
IMD, INTERMODULATION DISTORTION (dBc)
32
0
1000
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Power Gain and Power Added
Efficiency versus CW Output Power
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
32
IDQ1 = 80 mA
IDQ2 = 650 mA
f = 870 MHz
Gps, POWER GAIN (dB)
31
30
29
16 V
28
24 V
VDD = 12 V
27
0
20
40
20 V
60
80
32 V
28.5 V
100
120
140
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain versus Output Power
MW5IC970NBR1
6
RF Device Data
Freescale Semiconductor
NOTES
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
7
NOTES
MW5IC970NBR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
9
MW5IC970NBR1
10
RF Device Data
Freescale Semiconductor
MW5IC970NBR1
RF Device Data
Freescale Semiconductor
11
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MW5IC970NBR1
Document Number: MW5IC970NBR1
Rev. 1, 5/2006
12
RF Device Data
Freescale Semiconductor