MW6IC2240GNBR1

Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 6, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on - chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats including TD - SCDMA. Final Application • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 Watts Avg., f = 2157 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 28 dB Power Added Efficiency — 15% IM3 @ 10 MHz Offset — - 43 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 46 dBc in 3.84 MHz Bandwidth Driver Application • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ1 = 300 mA, IDQ2 = 320 mA, Pout = 25 dBm, Full Frequency Band (2110 2170 MHz), Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 29 dB IM3 @ 10 MHz Offset — - 59 dBc in 3.84 MHz Bandwidth ACPR @ 5 MHz Offset — - 62 dBc in 3.84 MHz Bandwidth • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 10 Watts CW Pout. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters and Common Source Scattering Parameters • On - Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation (1) VGS2 VDS1 MW6IC2240NBR1 MW6IC2240GNBR1 2110 - 2170 MHz, 4.5 W AVG., 28 V 2 x W - CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW6IC2240NBR1 CASE 1329A - 04 TO - 272 WB - 16 GULL PLASTIC MW6IC2240GNBR1 GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 RFout / VDS2 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987. © Freescale Semiconductor, Inc., 2005-2008. All rights reserved. RF Device Data Freescale Semiconductor MW6IC2240NBR1 MW6IC2240GNBR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +6 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C Case Operating Temperature Operating Junction Temperature (1,2) Input Power TJ 225 °C Pin 23 dBm Symbol Value (2,3) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Unit RθJC °C/W W - CDMA Application (Pout = 4.5 W Avg.) Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA 1.8 1.0 W - CDMA Application (Pout = 40 W CW) Stage 1, 28 Vdc, IDQ = 110 mA Stage 2, 28 Vdc, IDQ = 370 mA 2.0 0.87 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110 - 2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f = 2157 MHz, 2 - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 25.5 28 30 dB Power Added Efficiency PAE 13.7 15 — % Intermodulation Distortion IM3 — - 43 - 40 dBc ACPR — - 46 - 43 dBc IRL — - 15 - 10 dB Adjacent Channel Power Ratio Input Return Loss 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (continued) MW6IC2240NBR1 MW6IC2240GNBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110 MHz