MW6IC2420NBR1

Freescale Semiconductor Technical Data RF LDMOS Integrated Power Amplifier The MW6IC2420NB integrated circuit is designed with on--chip matching that makes it usable at 2450 MHz. This multi--stage structure is rated for 26 to 32 Volt operation and covers all typical industrial, scientific and medical modulation formats. LIFETIME BUY Driver Applications • Typical CW Performance at 2450 MHz: VDD = 28 Volts, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 20 Watts Power Gain — 19.5 dB Power Added Efficiency — 27% • Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW Output Power • Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts CW Pout. Features • Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source Scattering Parameters • On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel VDS1 RFin RFout/VDS2 VGS1 Quiescent Current Temperature Compensation (1) VGS2 VDS1 MW6IC2420NBR1 2450 MHz, 20 W, 28 V CW RF LDMOS INTEGRATED POWER AMPLIFIER CASE 1329--09 TO--272 WB--16 PLASTIC GND VDS1 NC NC NC 1 2 3 4 5 16 15 GND NC RFin 6 14 NC VGS1 VGS2 VDS1 GND 7 8 9 10 11 RFout / VDS2 13 12 NC GND (Top View) Note: Exposed backside of the package is the source terminal for the transistors. Figure 1. Functional Block Diagram Figure 2. Pin Connections LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Document Number: MW6IC2420N Rev. 3, 12/2010 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987. © Freescale Semiconductor, Inc., 2007--2010. All rights reserved. RF Device Data Freescale Semiconductor MW6IC2420NBR1 1 Symbol Value Unit Drain--Source Voltage Rating VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +6 Vdc Storage Temperature Range Tstg --65 to +150 °C TC 150 °C Case Operating Temperature Operating Junction Temperature (1,2) Input Power TJ 225 °C Pin 23 dBm Symbol Value (2,3) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case W--CDMA Application (Pout = 4.5 W Avg.) Unit RθJC °C/W Stage 1, 28 Vdc, IDQ = 210 mA Stage 2, 28 Vdc, IDQ = 370 mA 1.8 1 LIFETIME BUY Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1A (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, Pout = 4.5 W Avg., f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 25.5 28 30 dB Power Added Efficiency PAE 13.7 15 — % Intermodulation Distortion IM3 — --43 --40 dBc ACPR — --46 --43 dBc IRL — --15 --10 dB Adjacent Channel Power Ratio Input Return Loss 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. (continued) LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Table 1. Maximum Ratings MW6IC2420NBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 210 mA, IDQ2 = 370 mA, 2110--2170 MHz Video Bandwidth @ 20 W PEP Pout where IM3 = --30 dBc (Tone Spacing from 100 kHz to VBW) ∆IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz