MW6S010NR1

Freescale Semiconductor Technical Data Document Number: MW6S010N Rev. 5, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A or Class AB base station applications with frequencies up to 1500 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • Typical Two - Tone Performance at 960 MHz: VDD = 28 Volts, IDQ = 125 mA, Pout = 10 Watts PEP Power Gain — 18 dB Drain Efficiency — 32% IMD — - 37 dBc • Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • On - Chip RF Feedback for Broadband Stability • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MW6S010NR1 MW6S010GNR1 450 - 1500 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 09, STYLE 1 TO - 270 - 2 PLASTIC MW6S010NR1 CASE 1265A - 03, STYLE 1 TO - 270 - 2 GULL PLASTIC MW6S010GNR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature (1,2) TJ 225 °C Symbol Value (2,3) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 10 W PEP RθJC 2.85 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor MW6S010NR1 MW6S010GNR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A Machine Model (per EIA/JESD22 - A115) A Charge Device Model (per JESD22 - C101) III Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 1.5 2.3 3 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 125 mAdc, Measured in Functional Test) VGS(Q) 2 3.1 4 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.3 Adc) VDS(on) — 0.27 0.35 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 0.32 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 10 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 23 — pF Off Characteristics On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP, f = 960 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Gps 17.5 18 20.5 dB Drain Efficiency ηD 31 32 — % Intermodulation Distortion IMD — - 37 - 33 dBc Input Return Loss IRL — - 18 - 10 dB Typical Performances (In Freescale 450 MHz Demo Board, 50 οhm system) VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP, 420 - 470 MHz, Two - Tone Test, 100 kHz Tone Spacing Power Gain Gps — 20 — dB Drain Efficiency ηD — 33 — % Intermodulation Distortion IMD — - 40 — dBc Input Return Loss IRL — - 10 — dB MW6S010NR1 MW6S010GNR1 2 RF Device Data Freescale Semiconductor C11 B1 VBIAS + + C2 C3 C4 C6 C12 C7 C10 C15 + + + C16 C18 C19 C13 L1 RF INPUT DUT R1 Z1 Z2 C1 Z1 Z2 Z3 Z4 Z3 VSUPPLY Z5 Z6 Z7 RF OUTPUT Z4 C14 C5 C8 C17 C20 C9 0.073″ x 0.223″ Microstrip 0.112″ x 0.070″ Microstrip 0.213″ x 0.500″ Microstrip 0.313″ x 1.503″ Microstrip Z5 Z6 Z7 PCB 0.313″ x 0.902″ Microstrip 0.073″ x 1.080″ Microstrip 0.073″ x 0.314″ Microstrip Rogers ULTRALAM 2000, 0.031″, εr = 2.55 Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic — 900 MHz Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 900 MHz Part Description Part Number Manufacturer B1 Ferrite Bead 2743019447 Fair - Rite C1, C6, C11, C20 47 pF Chip Capacitors ATC100B470JT500XT ATC C2, C18, C19 22 μF, 35 V Tantalum Capacitors T491D226K035AT Kemet C3, C16 220 μF, 63 V Electrolytic Capacitors, Radial 2222 - 136 - 68221 Vishay C4, C15 0.1 μF Chip Capacitors CDR33BX104AKWS Kemet C5, C8, C17 0.8 - 8.0 pF Variable Capacitors, Gigatrim 272915L Johanson C7, C12 24 pF Chip Capacitors ATC100B240JT500XT ATC C9, C10, C13 6.8 pF Chip Capacitors ATC100B6R8JT500XT ATC C14 7.5 pF Chip Capacitor ATC100B7R5JT500XT ATC L1 12.5 nH Inductor A04T - 5 Coilcraft R1 1 kΩ, 1/4 W Chip Resistor CRCW12061001FKEA Vishay MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 3 C18 C3 C7 C4 C16 C15 C10 C2 B1 C6 C11 C19 C13 C12 L1 R1 C20 C9 C1 C17 C5 C8 C14 MW6S010N Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout — 900 MHz MW6S010NR1 MW6S010GNR1 4 RF Device Data Freescale Semiconductor −8 48 ηD −10 44 −12 40 IRL −14 36 32 −16 VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 125 mA, 100 kHz Tone Spacing −18 28 −20 24 IMD −22 20 Gps −24 16 910 920 930 940 950 −26 970 960 IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS — 900 MHz f, FREQUENCY (MHz) 20 IMD, INTERMODULATION DISTORTION (dBc) Figure 3. Two - Tone Wideband Performance @ Pout = 10 Watts IDQ = 190 mA Gps, POWER GAIN (dB) 19 125 mA 18 90 mA 17 VDD = 28 Vdc, f = 945 MHz Two−Tone Measurements 100 kHz Tone Spacing 16 15 1 10 −40 7th Order −50 −60 −70 0.1 1 10 100 Figure 4. Two - Tone Power Gain versus Output Power Figure 5. Intermodulation Distortion Products versus Output Power 48 VDD = 28 Vdc, Pout = 10 W (Avg.) IDQ = 125 mA, Two−Tone Measurements (f1+f2)/2 = Center Frequency = 945 MHz Ideal −30 3rd Order −35 −40 5th Order −50 −55 0.1 5th Order −30 Pout, OUTPUT POWER (WATTS) AVG. −25 −45 3rd Order Pout, OUTPUT POWER (WATTS) AVG. −15 −20 VDD = 28 Vdc, IDQ = 125 mA f = 945 MHz, Two−Tone Measurements 100 kHz Tone Spacing −20 100 Pout, OUTPUT POWER (dBm) IMD, INTERMODULATION DISTORTION (dBc) 0.1 −10 P3dB = 43.14 dBm (20.61 W) 46 P1dB = 42.23 dBm (16.71 W) 44 Actual 42 VDD = 28 Vdc, IDQ = 125 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 945 MHz 40 7th Order 38 1 10 100 19 21 23 25 27 29 TWO−TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 6. Intermodulation Distortion Products versus Tone Spacing Figure 7. Pulse CW Output Power versus Input Power MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 5 50 −10 VDD = 28 Vdc IDQ = 125 mA f = 945 MHz 40 −20 30 −30 Gps 20 −40 ACPR (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) TYPICAL CHARACTERISTICS — 900 MHz ηD 10 −50 ACPR 0 −60 0.1 1 10 Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single - Carrier CDMA ACPR, Power Gain and Power Added Efficiency versus Output Power 20 50 −30_C 18 TC = −30_C Gps 85_C ηD 25_C 40 30 85_C 17 20 16 VDD = 28 Vdc 10 IDQ = 125 mA f = 945 MHz 0 100 15 0.1 1 10 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 19 25_C Pout, OUTPUT POWER (WATTS) CW Figure 9. Power Gain and Power Added Efficiency versus Output Power 24 19 5 20 0 S21 17 16 −5 12 −10 8 −15 16 28 V VDD = 24 V 32 V 4 15 0 2 4 6 8 10 12 14 Pout, OUTPUT POWER (WATTS) CW Figure 10. Power Gain versus Output Power 16 0 500 S11 (dB) 18 S21 (dB) Gps, POWER GAIN (dB) IDQ = 125 mA f = 945 MHz S11 VDD = 28 Vdc Pout = 10 W CW IDQ = 125 mA −20 −25 600 700 800 900 1000 1100 1200 f, FREQUENCY (MHz) Figure 11. Broadband Frequency Response MW6S010NR1 MW6S010GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 108 MTTF (HOURS) 107 106 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 10 W PEP, and ηD = 32%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 7 Zo = 25 Ω f = 980 MHz f = 980 MHz Zsource Zload f = 800 MHz f = 800 MHz VDD = 28 Vdc, IDQ = 125 mA, Pout = 10 W PEP f MHz Zsource Ω Zload Ω 800 3.1 + j1.9 10.1 + j2.3 820 2.8 + j1.7 8.3 + j2.5 840 2.7 + j2.2 8.2 + j3.3 860 3.1 + j3.4 9.8 + j4.8 880 3.3 + j3.8 10.6 + j5.6 900 2.9 + j3.7 9.5 + j5.5 920 2.8 + j4.4 10.1 + j5.9 940 3.0 + j4.7 11.0 + j6.4 960 3.2 + j4.9 11.8 + j6.6 980 3.6 + j5.2 12.1 + j7.1 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 13. Series Equivalent Source and Load Impedance — 900 MHz MW6S010NR1 MW6S010GNR1 8 RF Device Data Freescale Semiconductor T1 R1 VBIAS + C1 R2 B1 B2 R5 C2 R3 VSUPPLY + + C3 C13 C4 C14 C15 T2 R4 R6 L1 DUT RF INPUT Z1 Z2 Z3 Z4 Z6 Z7 Z5 C10 C5 C7 0.540″ 0.365″ 0.225″ 0.440″ x 0.080″ x 0.080″ x 0.080″ x 0.080″ C6 Z1 Z2 Z3 Z4, Z7 C8 C9 Microstrip Microstrip Microstrip Microstrip RF OUTPUT Z8 Z5 Z6 Z8 PCB C12 C11 0.475″ x 0.330″ Microstrip 0.475″ x 0.325″ Microstrip 1.250″ x 0.080″ Microstrip Rogers ULTRALAM 2000, 0.030″, εr = 2.55 Figure 14. MW6S010NR1(GNR1) Test Circuit Schematic — 450 MHz Table 7. MW6S010NR1(GNR1) Test Circuit Component Designations and Values — 450 MHz Part Description Part Number Manufacturer B1, B2 Ferrite Bead 2743019447 Fair - Rite C1 1 μF, 35 V Tantalum Capacitor T491C105K050AT Kemet C2, C15 22 μF, 35 V Tantalum Capacitors T491X226K035AT Kemet C3, C14 0.1 μF Chip Capacitors C1210C104K5RAC Kemet C4, C9, C10, C13 330 pF Chip Capacitors ATC700A331JT150XT ATC C5 4.3 pF Chip Capacitor ATC100B4R3JT500XT ATC C6, C11 0.6 - 8.0 pF Variable Capacitors 27291SL Johanson C7, C8, C12 4.7 pF Chip Capacitors ATC100B4R7JT500XT ATC L1 39 μH Chip Inductor ISC - 1210 Vishay R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay R3 1.2 kΩ Chip Resistor CRCW08051201FKEA Vishay R4 2.2 kΩ Chip Resistor CRCW08052201FKEA Vishay R5 5 kΩ Potentiometer 1224W Bourns R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay T1 5 Volt Regulator, Micro 8 LP2951CDMR2G On Semiconductor T2 NPN Transistor, SOT - 23 BC847ALT1G On Semiconductor MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 9 R2 R1 R5 T1 B1 R3 T2 R4 C2 C4 C1 B2 C15 C14 C3 C13 C5 C12 C9 C6 C7 R6 L1 C10 C8 C11 MW6S010N 450 MHz Figure 15. MW6S010NR1(GNR1) Test Circuit Component Layout — 450 MHz MW6S010NR1 MW6S010GNR1 10 RF Device Data Freescale Semiconductor 37 34 Gps Gps, POWER GAIN (dB) 20 19.8 31 28 ηD VDD = 28 Vdc, Pout = 3 W (Avg.), IDQ = 150 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 19.6 19.4 19.2 25 −40 −45 19 ACPR IRL −50 18.8 18.6 18.4 400 −55 ALT1 −60 410 −65 500 420 430 440 450 460 470 480 490 ACPR (dBc), ALT1 (dBc) 20.2 −6 −9 −12 −15 −18 −21 IRL, INPUT RETURN LOSS (dB) 20.4 ηD, DRAIN EFFICIENCY (%) TYPICAL CHARACTERISTICS — 450 MHz f, FREQUENCY (MHz) 55 Gps 18.3 45 ηD 40 VDD = 28 Vdc, Pout = 7.5 W (Avg.), IDQ = 150 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) 18 17.8 35 −30 17.5 17.3 16.5 400 −40 IRL 17 16.8 −35 ACPR −45 ALT1 410 −50 420 430 440 450 460 470 480 490 −55 500 ACPR (dBc), ALT1 (dBc) Gps, POWER GAIN (dB) 18.5 50 −4 −6 −8 −10 −12 −14 IRL, INPUT RETURN LOSS (dB) 19 18.8 ηD, DRAIN EFFICIENCY (%) Figure 16. 2 - Carrier W - CDMA Broadband Performance @ Pout = 3 Watts Avg. f, FREQUENCY (MHz) 30 25 0 −5 S11 −20 ACPR −10 20 15 ALT1 −15 ALT2 10 5 VDD = 28 Vdc Pout = 10 W IDQ = 150 mA −30 −40 S11 S21 S21 −10 VDD = 28 Vdc, IDQ = 150 mA, f = 450 MHz, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 −50 −60 −20 −70 −25 50 100 150 200 250 300 350 400 450 500 550 600 650 −80 0.1 1 10 f, FREQUENCY (MHz) Pout, OUTPUT POWER (WATTS) AVG. Figure 18. Broadband Frequency Response Figure 19. Single - Carrier N - CDMA ACPR, ALT1 and ALT2 versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1 & ALT2, CHANNEL POWER (dBc) Figure 17. 2 - Carrier W - CDMA Broadband Performance @ Pout = 7.5 Watts Avg. MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 11 Zo = 25 Ω f = 500 MHz Zsource f = 500 MHz Zload f = 400 MHz f = 400 MHz VDD = 28 Vdc, IDQ = 150 mA, Pout = 10 W PEP f MHz Zsource Ω Zload Ω 400 9.0 + j3.8 15.0 + j1.4 420 8.8 + j5.4 14.3 + j3.3 440 9.6 + j6.6 15.0 + j4.7 460 10.6 + j9.5 16.3 + j7.3 480 10.7 + j12.6 16.4 + j11.1 500 11.5 + j13.9 16.9 + j12.7 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 20. Series Equivalent Source and Load Impedance — 450 MHz MW6S010NR1 MW6S010GNR1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 13 MW6S010NR1 MW6S010GNR1 14 RF Device Data Freescale Semiconductor MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 15 MW6S010NR1 MW6S010GNR1 16 RF Device Data Freescale Semiconductor MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 17 MW6S010NR1 MW6S010GNR1 18 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1949: Mounting Method for the MHVIC910HR2 (PFP - 16) and Similar Surface Mount Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3789: Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software • Electromigration MTTF Calculator • RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date 4 Dec. 2008 Description • Changed Storage Temperature Range in Max Ratings table from - 65 to +175 to - 65 to +150 for standardization across products, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added “Measured in Functional Test”, On Characteristics table, p. 2 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated Part Numbers in Tables 6, 7, Component Designations and Values, to RoHS compliant part numbers, p. 3, 9 • Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Replaced Case Outline 1265 - 08 with 1265 - 09, Issue K, p. 1, 13 - 15. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added JEDEC Standard Package Number. • Replaced Case Outline 1265A - 02 with 1265A - 03, Issue C, p. 1, 16 - 18. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (D2 changed from Min - Max .290 - .320 to .290 Min; E3 changed from Min - Max .150 - .180 to .150 Min). Added pin numbers. Corrected mm dimension L for gull - wing foot from 4.90 - 5.06 Min - Max to 0.46 - 0.61 Min - Max. Added JEDEC Standard Package Number. • Added Product Documentation and Revision History, p. 19 5 June 2009 • Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 2 • Added AN3789, Clamping of High Power RF Transistors and RFICs in Over - Molded Plastic Packages to Product Documentation, Application Notes, p. 19 • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 19 MW6S010NR1 MW6S010GNR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008-2009. All rights reserved. MW6S010NR1 MW6S010GNR1 Document Number: MW6S010N Rev. 5, 6/2009 20 RF Device Data Freescale Semiconductor