MW7IC008NT1

Freescale Semiconductor Technical Data Document Number: MW7IC008N Rev. 3, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC008NT1 The MW7IC008N wideband integrated circuit is designed with on--chip matching that makes it usable from 20 to 1000 MHz. This multi--stage structure is rated for 24 to 32 volt operation and covers most narrow bandwidth communication application formats. Driver Applications  Typical CW Performance: VDD = 28 Volts, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency Gps (dB) PAE (%) 100 MHz @ 11 W CW 23.5 55 400 MHz @ 9 W CW 22.5 41 900 MHz @ 6.5 W CW 23.5 34 100--1000 MHz, 8 W PEAK, 28 V RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER  Capable of Handling 10:1 VSWR, @ 32 Vdc, 900 MHz, Pout = 6.5 Watts CW (3 dB Input Overdrive from Rated Pout)  Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 8 Watts CW Pout @ 900 MHz  Typical Pout @ 1 dB Compression Point ≃ 11 Watts CW @ 100 MHz, 9 Watts CW @ 400 MHz, 6.5 Watts CW @ 900 MHz PQFN 8  8 PLASTIC NC VTTS2 RFinS1 RFoutS2/VDS2 RFoutS1/VDS1 RFinS2 Figure 1. Functional Block Diagram RFinS1 VGS1 24 23 22 21 20 19 7 8 9 10 11 12 18 17 16 15 14 13 NC NC NC NC NC RFoutS2/VDS2 NC NC VGS2 NC NC NC 1 2 3 4 5 6 VGLS2 VGS1 VGLS1 VTTS1 Quiescent Current Temperature Compensation (1) NC NC VTTS1 RFoutS1/VDS1 RFinS2 NC VGS2 VTTS2 Features  Broadband, Single Matching Network from 20 to 1000 MHz  Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)  Integrated ESD Protection  In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel. Figure 2. Pin Connections 1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.  Freescale Semiconductor, Inc., 2009, 2011--2013. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MW7IC008NT1 1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Operating Junction Temperature TJ 150 C CW 11 W 400 MHz CW Operation @ TA = 25C (3) 6 W 900 MHz CW Operation @ TA = 25C (3) 5 W Pin 27 23 38 dBm Symbol Value (1,2) Unit 100 MHz CW Operation @ TA = 25C (3) Input Power 100 MHz 400 MHz 900 MHz Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case (CW Signal @ 100 MHz) (Case Temperature 82C, Pout = 11 W CW) (CW Signal @ 400 MHz) (Case Temperature 87C, Pout = 9 W CW) (CW Signal @ 900 MHz) (Case Temperature 86C, Pout = 6.5 W CW) RJC C/W Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA 5.3 4.9 Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA 4.4 2.7 Stage 1, 28 Vdc, IDQ1 = 25 mA Stage 2, 28 Vdc, IDQ2 = 75 mA 3.5 3.2 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 1B Machine Model (per EIA/JESD22--A115) A Charge Device Model (per JESD22--C101) III Table 4. Moisture Sensitivity Level Test Methodology Per JESD22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 3 260 C 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 3. CW Ratings at the individual frequencies are limited by a 100--year MTTF requirement. See MTTF calculator (referenced in Note 1). MW7IC008NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 10 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 5.3 Adc) VGS(th) 1.3 2 2.8 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 25 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 3.5 Vdc Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 Adc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 Adc Gate--Source Leakage Current (VGS = 1.5 Vdc, VDS = 0 Vdc) IGSS — — 10 Adc Gate Threshold Voltage (VDS = 10 Vdc, ID = 23 Adc) VGS(th) 1.3 2 2.8 Vdc Gate Quiescent Voltage (VDD = 28 Vdc, ID = 75 mAdc, Measured in Functional Test) VGS(Q) 2 2.7 3.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) 0.1 0.3 1 Vdc Characteristic Stage 1 — Off Characteristics Stage 1 — On Characteristics Stage 2 — Off Characteristics Stage 2 — On Characteristics Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W CW, f = 900 MHz Power Gain Gps 21.5 Power Added Efficiency PAE 30 34 — % Input Return Loss IRL — --15 --11 dB 23.5 31.5 dB Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Frequency Gps (dB) PAE (%) IRL (dB) 100 MHz @ 11 W CW 23.5 55 --20 400 MHz @ 9 W CW 22.5 41 --17 900 MHz @ 6.5 W CW 23.5 34 --15 1. Part internally matched both on input and output. (continued) MW7IC008NT1 RF Device Data Freescale Semiconductor, Inc. 3 Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, 100--1000 MHz Bandwidth Characteristic Symbol Min Typ Max — 0.1 — Unit IMD Symmetry @ 6.8 W PEP, Pout where IMD Third Order Intermodulation  30 dBc (1) (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym VBW Resonance Point (1) (IMD Third Order Intermodulation Inflection Point) VBWres — 0.1 — MHz Gain Flatness in 500--1000 MHz Bandwidth @ Pout = 6 W Avg. GF — 1.35 — dB Gain Variation over Temperature (--30C to +85C) G — 0.024 — dB/C P1dB — 0.005 — dB/C Output Power Variation over Temperature (--30C to +85C) MHz Typical CW Performances — 100 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 11 W CW, f = 100 MHz Power Gain Gps — 23.5 — dB Power Added Efficiency PAE — 55 — % Input Return Loss IRL — --20 — dB P1dB — 11 — W Pout @ 1 dB Compression Point, CW Typical CW Performances — 400 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 9 W CW, f = 400 MHz Power Gain Gps — Power Added Efficiency PAE Input Return Loss IRL P1dB Pout @ 1 dB Compression Point, CW 22.5 — dB — 41 — % — --17 — dB — 9 — W Typical CW Performances — 900 MHz (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA, Pout = 6.5 W CW, f = 900 MHz Power Gain Gps — 23.5 — dB Power Added Efficiency PAE — 34 — % Input Return Loss IRL — --15 — dB P1dB — 6.5 — W Pout @ 1 dB Compression Point, CW 1. Not recommended for wide instantaneous bandwidth modulated signals. MW7IC008NT1 4 RF Device Data Freescale Semiconductor, Inc. VDD1 VGG2 GND C17 R12 L7 L6 C16 C15 C14 L5 R8 C13 C10 C11 C9 C8 C7 L4 C5 R4 R5 R6 VDD2 R11 R10 R9 C12 C3 R1 L2 C2 C1 L1 C4 L3 R2 R3 C6 R7 MW7IC008N Rev. 1a VGG1 GND Figure 3. MW7IC008NT1 Test Circuit Component Layout Table 6. MW7IC008NT1 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1 0.01 F Chip Capacitor GRM3195C1E103JA01 Murata C2, C15 0.1 F Chip Capacitors GRM219F51H104ZA01 Murata C3, C16 10 F Chip Capacitors GRM55DR61H106KA88L Murata C4, C5, C7, C8, C10, C11, C12, C14 0.01 F Chip Capacitors C0805C103K5RAC Kemet C6, C17 1 F, 35 V Tantalum Capacitors TAJA105K035R AVX C9 2.2 pF Chip Capacitor ATC600S2R2CT250XT ATC C13 3.3 pF Chip Capacitor ATC600S3R3BT250XT ATC L1, L7 150 nH Ceramic Chip Inductors LL2012--FHLR15J Toko L2, L6 180 nH Ceramic Chip Inductors LL2012--FHLR18J Toko L3 1.6 nH Inductor 0603HC--1N6XJLW Coilcraft L4, L5 5.1 nH Inductors 0603HP--5N1XJLW Coilcraft R1, R12 510 , 1/10 W Chip Resistors RR1220P--511--B--T5 Susumu R2, R3, R4 91 , 1/8 W Chip Resistors CRCW080591R0FKEA Vishay R5*, R9* 0 , 2.5 A Chip Resistors CRCW08050000Z0EA Vishay R6 10 K, 1/8 W Chip Resistor CRCW080510K0JNEA Vishay R7, R11 12 K, 1/8 W Chip Resistors CRCW080512K0JNEA Vishay R8 43 , 1/8 W Chip Resistor CRCW080543R0FKEA Vishay R10 15 K, 1/8 W Chip Resistor CRCW080515K0JNEA Vishay PCB 0.020, r = 3.66 RO4350B Rogers *Add for temperature compensation MW7IC008NT1 RF Device Data Freescale Semiconductor, Inc. 5 Gps, POWER GAIN (dB) 27 60 50 PAE 26 25 40 30 Gps 24 23 22 20 19 100 300 12 --20 --25 Pout 200 14 --10 --15 IRL 21 --5 400 500 600 700 800 900 --30 1000 10 8 6 4 Pout, OUTPUT POWER (WATTS) 70 VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Fixed Pin = 14.6 dBm CW 28 IRL, INPUT RETURN LOSS (dB) 29 PAE, POWER ADDED EFFICIENCY (%) TYPICAL CHARACTERISTICS f, FREQUENCY (MHz) IMD, INTERMODULATION DISTORTION (dBc) Figure 4. Broadband Performance @ Pin = 14.6 dBm CW --10 IM3--L IM3--U --20 IM5--U IM5--L --30 --40 VDD = 28 Vdc, Pout = 6.8 W (PEP) IDQ1 = 25 mA, IDQ2 = 75 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 900 MHz IM7--L --50 IM7--U --60 1 10 100 200 TWO--TONE SPACING (MHz) 26 90 25 80 24 900 MHz Gps 23 22 VDD = 28 Vdc IDQ1 = 25 mA IDQ2 = 75 mA 21 20 PAE 19 18 100 MHz 70 60 400 MHz 50 40 100 MHz 400 MHz 30 20 900 MHz PAE, POWER ADDED EFFICIENCY (%) Gps, POWER GAIN (dB) Figure 5. Intermodulation Distortion Products versus Two--Tone Spacing 10 1 10 20 Pout, OUTPUT POWER (WATTS) CW Figure 6. Power Gain and Power Added Efficiency versus Output Power MW7IC008NT1 6 RF Device Data Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 0 30 20 MHz 20 --12 15 --18 IRL 10 --24 VDD = 28 Vdc Pin = --10 dBm IDQ1 = 25 mA IDQ2 = 75 mA 5 --30 0 0 200 400 600 800 1000 1200 IRL (dB) GAIN (dB) --6 Gain 25 1400 --36 1600 f, FREQUENCY (MHz) Figure 7. Broadband Frequency Response MW7IC008NT1 RF Device Data Freescale Semiconductor, Inc. 7 VDD = 28 Vdc, IDQ1 = 25 mA, IDQ2 = 75 mA Pout = 11 W @ 100 MHz, 9 W @ 400 MHz, 6.5 W @ 900 MHz Zin f MHz Zin  Zload  100 49.78 + j1.07 47.87 -- j9.85 150 48.96 + j1.44 49.12 -- j5.44 200 48.00 + j1.54 49.09 -- j2.66 250 46.67 + j1.36 48.63 -- j0.79 300 45.30 + j0.91 47.73 + j0.49 350 43.93 + j0.11 46.60 + j1.22 400 42.53 -- j0.86 45.63 + j1.43 450 41.38 -- j2.16 44.97 + j1.13 500 40.30 -- j3.71 45.04 + j0.70 550 39.38 -- j5.44 45.23 + j0.77 600 38.43 -- j7.11 44.80 + j1.29 650 37.94 -- j8.71 44.32 + j1.48 700 37.49 -- j10.52 43.57 + j1.51 750 37.31 -- j12.42 43.19 + j1.32 800 37.00 -- j14.03 42.61 + j0.77 850 36.74 -- j15.64 42.25 + j0.39 900 36.57 -- j17.09 41.90 + j0.03 950 36.37 -- j18.59 41.67 -- j0.41 1000 36.12 -- j20.06 41.77 -- j1.10 1050 35.58 -- j21.43 41.82 -- j1.60 1100 35.00 -- j22.79 41.90 -- j2.01 1150 34.53 -- j24.39 42.26 -- j2.43 1200 33.53 -- j25.97 42.51 -- j2.80 1250 32.67 -- j27.84 42.74 -- j2.99 1300 31.61 -- j29.89 43.10 -- j3.11 1350 30.61 -- j32.34 43.52 -- j3.19 1400 29.55 -- j34.81 43.86 -- j3.13 1450 28.23 -- j37.61 44.03 -- j3.03 1500 27.34 -- j40.59 44.33 -- j2.67 = Device input impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 8. Series Equivalent Input and Load Impedance MW7IC008NT1 8 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS MW7IC008NT1 RF Device Data Freescale Semiconductor, Inc. 9 MW7IC008NT1 10 RF Device Data Freescale Semiconductor, Inc. MW7IC008NT1 RF Device Data Freescale Semiconductor, Inc. 11 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers  AN1977 Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family  AN1987 Quiescent Current Control for the RF Integrated Circuit Device Family Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Aug. 2009  Initial Release of Data Sheet 1 Sept. 2009  Modified Fig. 3, Test Circuit Component Layout and Table 6, Test Circuit Component Designations and Values to include temperature compensation options, p. 5  Fig. 3, Test Circuit Component Layout, corrected VDD1 to VGG1, p. 5  Table 6, Test Circuit Component Designations and Values, C6, C17: updated description from “1 F Tantalum Capacitors” to “1 F, 35 V Tantalum Capacitors”; L1, L7, L2, L6: corrected manufacturer from Coilcraft to Toko; L3: corrected part number from “0603HC--1N6XJLC” to “0603HC--1N6XJLW”; L4, L5: corrected part number from “100B100JT500XT” to “0603HP--5N1XJLW”; R1, R12: updated description from “510  Chip Resistors” to “510 , 1/10 W Chip Resistors”, p. 5 2 Mar. 2011  Updated frequency in overview paragraph from “100 to 1000 MHz” to “20 to 1000 MHz” to reflect lower 20 MHz capability and narrow bandwidth modulation, p. 1  Updated IMDsym Typical value from 180 MHz to 0.1 MHz and VBWres Typical value from 210 MHz to 0.1 MHz; modified Footnote 1 to reflect limited device capability regarding wide video bandwidth, Typical Performance table, p. 4 2.1 Mar. 2012  Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 3 Dec. 2013  Table 6, Test Circuit Component Designations and Values: updated PCB description to reflect most current board specifications from Rogers, p. 5  Replaced Case Outline 98ASA10760D, Rev. O with Rev. A, pp. 9--11. Mechanical outline drawing modified to reflect the correct lead end features. Format of the mechanical outline was also updated to the current Freescale format for Freescale mechanical outlines. MW7IC008NT1 12 RF Device Data Freescale Semiconductor, Inc. How to Reach Us: Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Home Page: freescale.com Web Support: freescale.com/support Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their respective owners. E 2009, 2011--2013 Freescale Semiconductor, Inc. MW7IC008NT1 Document Number: RF Device DataMW7IC008N Rev. 3, 12/2013 Freescale Semiconductor, Inc. 13