Document Number: MW7IC2725N
Rev. 3, 1/2010
Freescale Semiconductor
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on- chip
matching that makes it usable from 2300- 2700 MHz. This multi- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA,
Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 28.5 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth
Driver Applications
• Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA,
Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 27.8 dB
Power Added Efficiency — 3.2%
Device Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW
Pout
• Typical Pout @ 1 dB Compression Point ] 25 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
RFin
RFout/VDS2
VGS1
Quiescent Current
Temperature Compensation (1)
VGS2
VDS1
Figure 1. Functional Block Diagram
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
2500-2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-01
TO-270 WB-16
PLASTIC
MW7IC2725NR1
CASE 1887-01
TO-270 WB-16 GULL
PLASTIC
MW7IC2725GNR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW7IC2725NBR1
GND
VDS1
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
RFin
6
14
RFout/VDS2
NC
VGS1
VGS2
VDS1
GND
7
8
9
10
11
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977
or AN1987.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDS
-0.5, +65
Vdc
Gate-Source Voltage
VGS
-0.5, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
TC
150
°C
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
TJ
225
°C
Pin
22
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
°C/W
RθJC
WiMAX Application
(Case Temperature 75°C, Pout = 4 W Avg.)
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
5.9
1.4
CW Application
(Case Temperature 81°C, Pout = 25 W CW)
Stage 1, 28 Vdc, IDQ1 = 77 mA
Stage 2, 28 Vdc, IDQ2 = 275 mA
5.5
1.3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22-A113, IPC/JEDEC J-STD-020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 77 mA)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q)
12.5
15.8
19.5
Vdc
Characteristic
Stage 1 - Off Characteristics
Stage 1 - On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate-Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 80 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 275 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 275 mAdc, Measured in Functional Test)
VGG(Q)
11
14
18
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 800 mAdc)
VDS(on)
0.15
0.47
0.8
Vdc
Coss
—
111
—
pF
Stage 2 - Off Characteristics
Stage 2 - On Characteristics
Stage 2 - Dynamic Characteristics (1)
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps
25.5
28.5
30.5
dB
Power Added Efficiency
PAE
15
17
—
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
—
9
—
dB
ACPR
—
-50
-46
dBc
IRL
—
-15
-10
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Performances OFDM Signal - 10 MHz Channel Bandwidth (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc,
IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth,
Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error (2)
Error Vector Magnitude
(2)
1. Part internally matched both on input and output.
2. RCE = 20Log(EVM/100)
RCE
—
-33
—
dB
EVM
—
2.2
—
% rms
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, 2500- 2700 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
25
—
—
50
—
W
IMD Symmetry @ 27 W PEP, Pout where IMD Third Order
Intermodulation ` 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
90
—
MHz
Gain Flatness in 200 MHz Bandwidth @ Pout = 4 W Avg.
GF
—
0.5
—
dB
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ Pout = 25 W CW
Φ
—
2.1
—
°
Delay
—
2.3
—
ns
Part-to-Part Insertion Phase Variation @ Pout = 25 W CW,
f = 2600 MHz, Six Sigma Window
ΔΦ
—
22
—
°
Gain Variation over Temperature
(-30 °C to +85°C)
ΔG
—
0.036
—
dB/°C
ΔP1dB
—
0.003
—
dBm/°C
Average Group Delay @ Pout = 25 W CW, f = 2600 MHz
Output Power Variation over Temperature
(-30 °C to +85°C)
MHz
Typical Driver Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 26 dBm Avg.,
f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @ ±8.5 MHz Offset.
Power Gain
Gps
—
27.8
—
dB
Power Added Efficiency
PAE
—
3.2
—
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
—
9
—
dB
ACPR
—
-56
—
dBc
Input Return Loss
IRL
—
-13
—
dB
Relative Constellation Error @ Pout = 1.25 W Avg. (1)
RCE
—
-40
—
dB
Adjacent Channel Power Ratio
1. RCE = 20Log(EVM/100)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
4
RF Device Data
Freescale Semiconductor
VDD1
VD2
B1
28 V
C17
C16
C9
C15
C8
C14
C7
RF
INPUT
1
2
3
4
5
Z1
Z2
Z3
NC
DUT
C13
NC 16
C12
NC 15
NC
NC
NC
Z13
Z4
14
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12 Z14
RF
OUTPUT
6
C11
7 NC
8
9
C4
C5
C6
C1
10
11 NC
C10
Quiescent Current
Temperature
Compensation
NC 13
NC 12
VG1
R4
R5
C2
R6
C3
VG2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500″ x 0.027″ Microstrip
0.075″ x 0.127″ Microstrip
1.640″ x 0.027″ Microstrip
0.100″ x 0.042″ Microstrip
0.151″ x 0.268″ Microstrip
0.025″ x 0.268″ x 0.056″ Taper
0.050″ x 0.056″ Microstrip
0.356″ x 0.056″ Microstrip
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
0.040″ x 0.061″ Microstrip
0.020″ x 0.050″ Microstrip
0.050″ x 0.050″ Microstrip
0.050″ x 0.027″ Microstrip
0.338″ x 0.020″ Microstrip
1.551″ x 0.027″ Microstrip
Rogers R04350B, 0.0133″, εr = 3.48
* Line length includes microstrip bends
Figure 3. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
47 Ω, 100 MHz Short Ferrite Bead
2743019447
Fair-Rite
C1, C4, C7, C12, C15
6.8 pF Chip Capacitors
ATC600S6R8CT250XT
ATC
C2, C5, C8, C13
10 nF Chip Capacitors
C0603C103J5RAC
Kemet
C3, C6, C9, C14
1 μF, 50 V Chip Capacitors
GRM32RR71H105KA01B
Murata
C10
2.4 pF Chip Capacitor
ATC600S2R4BT250XT
ATC
C11
3.3 pF Chip Capacitor
ATC600S3R3BT250XT
ATC
C16, C17
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88B
Murata
R1, R4
12 KΩ, 1/4 W Chip Resistors
CRCW12061202FKEA
Vishay
R2, R3, R5, R6
1 KΩ, 1/4 W Chip Resistors
CRCW12061001FKEA
Vishay
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
5
MW7IC2725N
Rev. 1.3
C16
C17
C15
C9
C8
C7
R5
C1
R6
VG1
R1
R2
R3
C2
C6
C3
CUT OUT AREA
R4
C14
C12
C13
C4
C5
B1
C10
C11
VG2
Figure 4. MW7IC2725NR1(GNR1)(NBR1) Test Circuit Component Layout
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
6
RF Device Data
Freescale Semiconductor
Gps, POWER GAIN (dB)
28.2
17
Gps
16
28
15
V = 28 Vdc, Pout = 4 W (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA
27.8 DD
OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel
27.6 Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF
27.4
14
27.2 ACPR
27
-53
-16
-54
-18
-55
-56
PARC
-57
26.8
IRL
26.6
2500
2525
2550
2575
2600
2625
2650
2675
-20
-22
-24
-58
2700
-26
-0.2
-0.4
-0.6
-0.8
PARC (dB)
28.4
IRL, INPUT RETURN LOSS (dB)
18
PAE
ACPR (dBc)
28.6
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
-1
-1.2
f, FREQUENCY (MHz)
3
PAE
Gps
2.5
28
VDD = 28 Vdc, Pout = 26 dBm (Avg.), IDQ1 = 77 mA, IDQ2 = 275 mA
27.8 OFDM 802.16d, 64 QAM 3/ , 4 Bursts, 10 MHz Channel Bandwidth
4
27.6 Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF
2
-56
-10
27.4
-57
-15
27.2
PARC
1.5
-58
ACPR
27
-59
26.8
-60
IRL
26.6
2500
2525
2550
2575
2600
2625
2650
2675
ACPR (dBc)
Gps, POWER GAIN (dB)
28.2
-61
2700
-20
-25
-30
-35
-0.2
-0.4
-0.6
-0.8
PARC (dB)
3.5
28.4
IRL, INPUT RETURN LOSS (dB)
28.6
PAE, POWER ADDED
EFFICIENCY (%)
Figure 5. WiMAX Broadband Performance @ Pout = 4 Watts Avg.
-1
-1.2
f, FREQUENCY (MHz)
Figure 6. WiMAX Broadband Performance @ Pout = 26 dBm Avg.
30
30
IDQ1 = 103 mA
29
344 mA
28
275 mA
27
29
96 mA
Gps, POWER GAIN (dB)
Gps, POWER GAIN (dB)
IDQ2 = 412 mA
206 mA
26
25
137 mA
VDD = 28 Vdc
IDQ1 = 77 mA
f = 2600 MHz
24
28
77 mA
27
58 mA
26
25
39 mA
VDD = 28 Vdc
IDQ2 = 275 mA
f = 2600 MHz
24
23
23
0.1
1
10
100
0.1
1
10
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain versus Output Power
@ IDQ1 = 77 mA
Figure 8. Power Gain versus Output Power
@ IDQ2 = 275 mA
100
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
7
IMD, INTERMODULATION DISTORTION (dBc)
TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 27 W (PEP), IDQ1 = 77 mA
IDQ2 = 275 mA, Two-Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
-10
-20
IM3-U
-30
IM3-L
IM5-L
-40
IM5-U
IM7-L
-50
IM7-U
-60
10
1
100
TWO-T ONE SPACING (MHz)
Figure 9. Intermodulation Distortion Products
versus Tone Spacing
27.5
27
26.5
26
0
30
ACPR
-1
Gps
-1 dB = 4.01 W
-2
25
20
15
-3
-4
-2 dB = 6.21 W
10
PARC
-3 dB = 8.59 W
-30
35
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA f = 2600 MHz, OFDM
802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel
Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
PAE
Probability on CCDF
1
3
6
9
12
-40
-45
-50
-55
-60
5
-5
-35
ACPR (dBc)
28
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
28.5
1
PAE, POWER ADDED EFICIENCY (%)
29
15
Pout, OUTPUT POWER (WATTS)
Figure 10. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
-15
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA
f = 2600 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability on CCDF
40
35
-40 _C
25_C
85_C
85_C
TC = -40_C 25_C
20
-25
-30
25_C
-40 _C -35
30
25
-20
85_C
-40
Gps
-45
15
PAE
10
-50
ACPR
5
ACPR (dBc)
PAE, POWER ADDED EFFICIENCY (%),
Gps, POWER GAIN (dB)
45
-55
0
-60
1
10
50
Pout, OUTPUT POWER (WATTS) AVG. WiMAX
Figure 11. WiMAX, ACPR, Power Gain and
Power Added Efficiency versus Output Power
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
8
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
0
109
19
-10
108
13
-20
25
S21
S11
1
-5
1800
VDD = 28 Vdc
IDQ1 = 77 mA, IDQ2 = 275 mA
2000
2200
2400
2600
2800
3000
3200
MTTF (HOURS)
-30
7
S11 (dB)
S21 (dB)
1st Stage
107
2nd Stage
106
-40
105
-50
3400
104
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
This above graph displays calculated MTTF in hours when the device
is operated at VDD = 28 Vdc, Pout = 4 W Avg., and PAE = 17%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 13. MTTF versus Junction Temperature
WIMAX TEST SIGNAL
100
-10
10
-20
-30
1
-40
0.1
(dB)
PROBABILITY (%)
Input Signal
10 MHz
Channel BW
-50
0.01
OFDM 802.16d, 64 QAM 3/4, 4 Bursts
10 MHz Channel Bandwidth, Input Signal
PAR = 9.5 dB @ 0.01% Probability
on CCDF
0.001
0.0001
0
2
4
6
-60
-70
8
PEAK-T O-A VERAGE (dB)
Figure 14. OFDM 802.16d Test Signal
10
-80
ACPR in 1 MHz
Integrated BW
-90
-20
-15
-10
ACPR in 1 MHz
Integrated BW
-5
0
5
10
15
20
f, FREQUENCY (MHz)
Figure 15. WiMAX Spectrum Mask Specifications
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
9
Zo = 50 Ω
f = 2700 MHz
f = 2700 MHz
Zload
Zsource
f = 2500 MHz
f = 2500 MHz
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA, Pout = 4 W Avg.
f
MHz
Zsource
W
Zload
W
2500
36.381 - j4.271
5.717 - j3.618
2525
36.041 - j3.328
5.624 - j3.187
2550
35.753 - j2.363
5.578 - j2.770
2575
35.516 - j1.380
5.589 - j2.412
2600
35.333 - j0.381
5.586 - j2.088
2625
35.203 + j0.635
5.579 - j1.807
2650
35.126 + j1.664
5.552 - j1.559
2675
35.104 + j2.707
5.564 - j1.335
2700
35.138 + j3.760
5.568 - j1.164
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
10
RF Device Data
Freescale Semiconductor
Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25°C, 50 Ohm System)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
1500
0.735
61.0
0.001
-167.6
0.000501
26.6
0.992
167.9
1550
0.729
53.3
0.004
-146.0
0.000361
34.7
0.993
166.3
1600
0.715
46.5
0.014
-146.4
0.000114
109.5
0.991
164.6
1650
0.695
39.8
0.039
-152.5
0.000385
148.4
0.992
162.7
1700
0.665
32.9
0.110
-166.8
0.000773
155.6
0.989
160.5
1750
0.619
25.0
0.299
169.4
0.00134
153.2
0.979
157.8
1800
0.549
15.1
0.708
134.4
0.00198
143.0
0.944
155.2
1850
0.452
2.6
1.335
96.3
0.00250
131.2
0.903
153.9
1900
0.332
-14.4
2.195
62.1
0.00290
121.7
0.879
153.0
1950
0.199
-40.1
3.445
32.7
0.00320
113.8
0.847
151.0
2000
0.089
-91.9
5.724
4.8
0.00345
108.5
0.817
147.7
2050
0.078
167.4
10.041
-26.2
0.00382
107.0
0.749
140.6
2100
0.116
90.3
19.072
-65.1
0.00525
105.3
0.571
125.2
2150
0.170
-13.2
32.642
-126.0
0.00781
77.9
0.054
160.2
2200
0.192
-93.2
31.339
171.3
0.00640
41.0
0.555
-144.4
2250
0.177
-123.0
26.174
130.3
0.00432
24.9
0.726
-160.3
2300
0.163
-132.6
23.605
98.7
0.00294
22.3
0.770
-167.1
2350
0.153
-140.5
22.427
70.0
0.00224
31.0
0.789
-170.1
2400
0.119
-153.6
21.922
41.7
0.00208
42.5
0.800
-171.0
2450
0.059
-165.3
21.172
14.2
0.00216
48.9
0.820
-171.2
2500
0.014
-50.7
20.172
-12.5
0.00227
48.9
0.850
-171.3
2550
0.055
-55.0
19.222
-39.5
0.00213
51.4
0.889
-171.7
2600
0.056
-84.7
17.366
-66.8
0.00209
57.8
0.933
-173.2
2650
0.029
177.4
14.562
-91.5
0.00247
65.6
0.961
-175.8
2700
0.069
103.3
12.199
-1 11.7
0.00286
62.2
0.968
-178.0
2750
0.122
84.1
10.485
-130.4
0.00308
56.3
0.969
-179.5
2800
0.287
59.8
8.086
-154.4
0.00326
50.9
0.969
179.3
2850
0.184
-5.4
7.102
-152.5
0.00292
39.2
0.966
178.6
2900
0.129
-17.4
6.753
-169.3
0.00256
38.6
0.969
178.0
2950
0.128
-41.0
6.107
175.4
0.00232
38.5
0.970
177.4
3000
0.164
-65.7
5.445
160.8
0.00213
39.9
0.972
176.9
3050
0.223
-86.2
4.867
146.7
0.00196
42.0
0.972
176.4
3100
0.297
-100.4
4.363
133.2
0.00183
46.0
0.973
176.0
3150
0.374
-1 10.4
3.918
120.0
0.00176
51.4
0.974
175.5
3200
0.447
-1 18.0
3.534
107.2
0.00181
56.5
0.974
174.9
3250
0.515
-123.4
3.198
95.3
0.00191
60.9
0.975
174.3
3300
0.563
-128.0
2.951
83.3
0.00211
58.8
0.975
173.7
3350
0.619
-131.8
2.761
71.2
0.00206
63.0
0.976
173.0
3400
0.651
-136.0
2.581
58.8
0.00218
64.8
0.975
172.3
3450
0.671
-140.1
2.418
46.0
0.00237
68.3
0.975
171.6
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
11
Table 7. Common Source S-Parameters (VDD = 28 V, IDQ1 = 77 mA, IDQ2 = 275 mA, TC = 25°C, 50 Ohm System) (continued)
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
3500
0.679
-144.4
2.257
32.6
0.00265
68.5
0.974
171.0
3550
0.677
-147.9
2.054
19.2
0.00280
65.0
0.976
170.5
3600
0.661
-153.5
1.851
5.0
0.00281
67.1
0.976
170.0
3650
0.696
-153.8
1.644
-5.8
0.00328
69.3
0.976
169.6
3700
0.721
-161.3
1.453
-19.4
0.00350
65.8
0.977
169.4
3750
0.737
-168.1
1.243
-32.1
0.00357
64.5
0.978
169.2
3800
0.753
-174.7
1.042
-43.7
0.00374
64.5
0.979
169.2
3850
0.771
179.2
0.859
-54.3
0.00401
62.5
0.980
169.2
3900
0.788
174.4
0.708
-62.8
0.00407
58.4
0.980
169.3
3950
0.812
169.8
0.583
-71.5
0.00416
57.7
0.981
169.3
4000
0.829
166.0
0.477
-79.0
0.00427
55.8
0.982
169.3
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
12
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
50
50
Ideal
P3dB = 45.73 dBm (36 W)
44
Actual
42
40
38
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA
Pulsed CW, 10 μsec(on), 10% Duty Cycle,
f = 2500 MHz
36
34
Pout, OUTPUT POWER (dBm)
Pout, OUTPUT POWER (dBm)
P1dB = 44.61 dBm (29 W)
46
46
Ideal
P3dB = 44.46 dBm (35 W)
48
48
P1dB = 45.42 dBm (28 W)
Actual
44
42
40
38
36
VDD = 28 Vdc, IDQ1 = 77 mA, IDQ2 = 275 mA
Pulsed CW, 10 μsec(on), 10% Duty Cycle,
f = 2700 MHz
34
32
3 4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19
2 3 4 5 6
Pin, INPUT POWER (dBm)
7 8
9 10 11 12 13 14 15 16 17 18 19 20
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
Test Impedances per Compression Level
Test Impedances per Compression Level
P1dB
Zsource
Ω
Zload
Ω
42.7 + j11.6
4.86 - j1.63
Figure 17. Pulsed CW Output Power
versus Input Power @ 28 V @ 2500 MHz
P1dB
Zsource
Ω
Zload
Ω
39.5 - j8.7
3.53 - j1.66
Figure 18. Pulsed CW Output Power
versus Input Power @ 28 V @ 2700 MHz
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
14
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
15
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
16
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
17
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
18
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
19
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
20
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
21
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
22
RF Device Data
Freescale Semiconductor
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
June 2008
• Initial Release of Data Sheet
1
July 2008
• Added MW7IC2725NBR1 device and corresponding case outline information to data sheet.
2
Oct. 2008
• Added Fig. 13, MTTF versus Junction Temperature, p. 9
3
Jan. 2010
• Modified VSWR rating to show the 3 dB overdrive capability, p. 1
• Maximum Ratings table: Added Case Operating Temperature and set limit to 150°C. Corrected maximum
input power level to the tested value from 20 dBm to 22 dBm, p. 2
• Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to
Product Documentation, Application Notes, p. 23
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
RF Device Data
Freescale Semiconductor
23
How to Reach Us:
Home Page:
www.freescale.com
Web Support:
http://www.freescale.com/support
USA/Europe or Locations Not Listed:
Freescale Semiconductor, Inc.
Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284
1-800-521-6274 or +1-480-768-2130
www.freescale.com/support
Europe, Middle East, and Africa:
Freescale Halbleiter Deutschland GmbH
Technical Information Center
Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English)
+46 8 52200080 (English)
+49 89 92103 559 (German)
+33 1 69 35 48 48 (French)
www.freescale.com/support
Japan:
Freescale Semiconductor Japan Ltd.
Headquarters
ARCO Tower 15F
1-8-1, Shimo-Meguro, Meguro-ku,
Tokyo 153-0064
Japan
0120 191014 or +81 3 5437 9125
support.japan@freescale.com
Asia/Pacific:
Freescale Semiconductor China Ltd.
Exchange Building 23F
No. 118 Jianguo Road
Chaoyang District
Beijing 100022
China
+86 10 5879 8000
support.asia@freescale.com
For Literature Requests Only:
Freescale Semiconductor Literature Distribution Center
1-800-441-2447 or +1-303-675-2140
Fax: +1-303-675-2150
LDCForFreescaleSemiconductor@hibbertgroup.com
Information in this document is provided solely to enable system and software
implementers to use Freescale Semiconductor products. There are no express or
implied copyright licenses granted hereunder to design or fabricate any integrated
circuits or integrated circuits based on the information in this document.
Freescale Semiconductor reserves the right to make changes without further notice to
any products herein. Freescale Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular purpose, nor does
Freescale Semiconductor assume any liability arising out of the application or use of
any product or circuit, and specifically disclaims any and all liability, including without
limitation consequential or incidental damages. “Typical” parameters that may be
provided in Freescale Semiconductor data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All operating
parameters, including “Typicals”, must be validated for each customer application by
customer's technical experts. Freescale Semiconductor does not convey any license
under its patent rights nor the rights of others. Freescale Semiconductor products are
not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life,
or for any other application in which the failure of the Freescale Semiconductor product
could create a situation where personal injury or death may occur. Should Buyer
purchase or use Freescale Semiconductor products for any such unintended or
unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all
claims, costs, damages, and expenses, and reasonable attorney fees arising out of,
directly or indirectly, any claim of personal injury or death associated with such
unintended or unauthorized use, even if such claim alleges that Freescale
Semiconductor was negligent regarding the design or manufacture of the part.
Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc.
All other product or service names are the property of their respective owners.
© Freescale Semiconductor, Inc. 2008, 2010. All rights reserved.
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
Document Number: MW7IC2725N
Rev. 3, 1/2010
24
RF Device Data
Freescale Semiconductor
工商网监
湘ICP备2023018690号
