Freescale Semiconductor
Technical Data
Document Number: MW7IC915N
Rev. 2, 12/2013
RF LDMOS Wideband Integrated
Power Amplifier
The MW7IC915N wideband integrated circuit is designed with on--chip
matching that makes it usable from 698 to 960 MHz. This multi--stage
structure is rated for 26 to 32 volt operation and covers all typical cellular base
station modulation formats.
MW7IC915NT1
Driver Application — 900 MHz
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
865 MHz
37.9
17.1
--50.4
880 MHz
38.0
17.4
--50.6
895 MHz
37.8
17.5
--51.3
Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, Pout = 23.5 Watts CW
(3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 30 to 41.5 dBm CW
Pout.
Typical Pout @ 1 dB Compression Point ≃ 15.5 Watts CW
Driver Application — 700 MHz
728--960 MHz, 1.6 W AVG., 28 V
SINGLE W--CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
PQFN 8 8
PLASTIC
Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts,
IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB
@ 0.01% Probability on CCDF.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
728 MHz
37.8
17.2
--49.5
748 MHz
37.8
17.3
--50.5
768 MHz
37.7
17.3
--51.4
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 13--inch Reel.
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Freescale Semiconductor, Inc., 2009, 2013. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MW7IC915NT1
1
RFin
NC
GND
24 23 22 21 20 19
7 8 9 10 11 12
NC
VDS1
RFout/VDS2
RFin
RFin
GND
NC
1
2
3
4
5
6
VDS1
Figure 1. Functional Block Diagram
18
17
16
15
14
13
RFout/VDS2
RFout/VDS2
RFout/VDS2
RFout/VDS2
RFout/VDS2
RFout/VDS2
VDS1
NC
NC
NC
Quiescent Current
Temperature Compensation (1)
NC
VGS2
NC
NC
NC
VGS2
VGS1
VGS1
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Tstg
--65 to +150
C
Storage Temperature Range
Operating Junction Temperature
(1)
Input Power
TJ
150
C
Pin
17
dBm
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W--CDMA Application
(Case Temperature 82C, Pout = 1.6 W CW)
RJC
C/W
Stage 1, 28 Vdc, IDQ1 = 60 mA
Stage 2, 28 Vdc, IDQ2 = 130 mA
7.5
3.2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
C
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
MW7IC915NT1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 9 Adc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 52 mAdc)
VGS(Q)
—
3
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 52 mAdc, Measured in Functional Test)
VGG(Q)
5.5
6.3
7
Vdc
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
Adc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
Adc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 36 Adc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 134 mAdc)
VGS(Q)
—
2.9
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 134 mAdc, Measured in Functional Test)
VGG(Q)
3.8
4.6
5.3
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.6 Adc)
VDS(on)
0.1
0.3
0.8
Vdc
Characteristic
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg.,
f = 880 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Power Gain
Gps
35.0
38.0
41.0
dB
Power Added Efficiency
PAE
15.0
17.4
—
%
ACPR
—
--50.6
--47.0
dBc
IRL
—
--22
--9
dB
Adjacent Channel Power Ratio
Input Return Loss
Typical Performance over Frequency (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W
Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
IRL
(dB)
865 MHz
37.9
17.1
--50.4
--21
880 MHz
38.0
17.4
--50.6
--22
895 MHz
37.8
17.5
--51.3
--22
1. Part internally input matched.
(continued)
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Symbol
Characteristic
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, 865--895 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
(VDD = 28 Vdc, IDQ1 = 75 mA, IDQ2 = 100 mA)
P1dB
—
15.5
—
—
45
—
W
IMD Symmetry @ 16 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
180
—
MHz
IQT
—
—
0.10
0.12
—
—
%
Gain Flatness in 30 MHz Bandwidth @ Pout = 1.6 W Avg.
GF
—
0.1
—
dB
Gain Variation over Temperature
(--30C to +85C)
G
—
0.041
—
dB/C
P1dB
—
0.004
—
dBm/C
Quiescent Current Accuracy over Temperature (1)
with 2 k Gate Feed Resistors (--30 to 85C)
Output Power Variation over Temperature
(--30C to +85C)
Stage 1
Stage 2
MHz
Typical Performance — 700 MHz (In Freescale 700 MHz Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout =
1.6 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in
3.84 MHz Channel Bandwidth @ 5 MHz Offset.
Frequency
Gps
(dB)
PAE
(%)
ACPR
(dBc)
IRL
(dB)
728 MHz
37.8
17.2
--49.5
--23
748 MHz
37.8
17.3
--50.5
--22
768 MHz
37.7
17.3
--51.4
--22
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or
AN1987.
MW7IC915NT1
4
RF Device Data
Freescale Semiconductor, Inc.
VG1
VG2
R1
C8
R2
C10 C12
C19
C13
C7
C9
C15
C17
VD2
C11
C2
C1
C3
C4
C5
C6
C14
MW7IC915N
Rev 3
C16
VD1
C18
C20
Figure 3. MW7IC915NT1 Test Circuit Component Layout
Table 6. MW7IC915NT1 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
1.8 pF Chip Capacitor
ATC100B1R8BT500XT
ATC
C2, C5
0.8 pF Chip Capacitors
ATC100B0R8BT500XT
ATC
C3
6.2 pF Chip Capacitor
ATC100B6R2BT500XT
ATC
C4
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C6, C11, C12, C13, C14
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C7, C8
1 F Chip Capacitors
GRM31MR71H105KA88L
Murata
C9, C10
0.1 F Chip Capacitors
GRM32MR71H104JA01L
Murata
C15, C16
4.7 F Chip Capacitors
GRM31CR71H475KA12L
Murata
C17, C18
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C19, C20
100 F, 50 V Electrolytic Capacitors
MCGPR50V107M8X11--RH
Multicomp
R1, R2
2 k, 1/4 W Resistors
CRCW12062K00FKEA
Vishay
PCB
0.020, r = 3.66
RO4350B
Rogers
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
5
Gps
38
18
17
37 VDD = 28 Vdc, Pout = 1.6 W (Avg.), IDQ1 = 52 mA
IDQ2 = 134 mA, Single--Carrier W--CDMA, 3.84 MHz
36 Channel Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
35
16
--46
IRL
--47
--48
34
33
32
800
PARC --49
ACPR
820
840
860
880
900
940
920
ACPR (dBc)
Gps, POWER GAIN (dB)
39
--50
980 1000
960
--10
--20
--30
--40
0.5
0
--0.5
PARC (dB)
19
PAE
IRL, INPUT RETURN LOSS (dB)
40
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
--1
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 1.6 Watts Avg.
--5
--10
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
--65
--70
VDD = 28 Vdc, Pout = 16 W (PEP), IDQ1 = 52 mA
IDQ2 = 134 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IM7--U
IM7--L
1
10
100
200
TWO--TONE SPACING (MHz)
39.5
0
39
38.5
38
37.5
37
--1
40
Gps
--2 dB = 5.2 W
--2
--4
--5
ACPR
2
30
--3 dB = 6.9 W
PAE
--3
50
--1 dB = 3.8 W
PARC
20
10
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0
4
6
8
--20
60
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, f = 880 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
--25
--30
--35
ACPR (dBc)
1
PAE, POWER ADDED EFFICIENCY (%)
40
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
--45
--50
10
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MW7IC915NT1
6
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
Gps, POWER GAIN (dB)
40
39
Gps
37
36
--20
50
880 MHz
40
865 MHz
30
ACPR
34
80
60
895 MHz 880 MHz 865 MHz
880 MHz
895 MHz
35
--15
70
895 MHz
38
90
20
PAE
33
1
10
20
--25
--30
--35
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
PAE, POWER ADDED EFFICIENCY (%)
41
--45
--50
--55
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
0
40
Gain
--5
20
--10
10
--15
0
VDD = 28 Vdc
Pin = --30 dBm
IDQ1 = 52 mA
IDQ2 = 134 mA
--10
--20
300
IRL (dB)
GAIN (dB)
30
--20
IRL
--25
600
--30
1200
900
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 9. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 10. Single--Carrier W--CDMA Spectrum
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pout = 1.6 W Avg.
f
MHz
Zin
Zload
820
52.99 -- j29.47
7.72 + j13.96
840
49.35 -- j27.56
7.34 + j14.74
860
46.67 -- j23.60
7.43 + j15.55
880
44.88 -- j17.63
7.94 + j16.07
900
43.73 -- j10.46
7.98 + j16.74
920
43.12 -- j2.75
7.80 + j17.62
940
43.38 + j5.01
8.28 + j18.33
960
44.07 + j12.97
9.07 + j19.04
43.89 + j12.61
9.14 + j20.02
980
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 11. Series Equivalent Input and Load Impedance
MW7IC915NT1
8
RF Device Data
Freescale Semiconductor, Inc.
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ1 = 52 mA, IDQ2 = 134 mA, Pulsed CW,
10 sec(on), 10% Duty Cycle
48
47
f = 865 MHz
Pout, OUTPUT POWER (dBm)
46
Ideal
f = 895 MHz
45
44
Actual
43
42
41
f = 895 MHz
f = 865 MHz
f = 880 MHz
40
39
38
f = 880 MHz
37
36
0
2
4
6
8
12
10
Pin, INPUT POWER (dBm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
P1dB
P3dB
f
(MHz)
Watts
dBm
Watts
dBm
865
18.1
42.6
22.4
43.5
880
18.5
42.7
22.3
43.5
895
18.5
42.7
22.2
43.5
Test Impedances per Compression Level
f
(MHz)
Zsource
Zload
865
P1dB
48.7 + j15.6
6.8 + j6.5
880
P1dB
52.3 + j20.8
6.9 + j6.7
895
P1dB
55.1 + j22.2
7.4 + j6.7
Figure 12. Pulsed CW Output Power
versus Input Power @ 28 V
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
9
VG1
VG2
C9
R1
C16
R2
C14
C12
C8
C1
VD2
C10
C3
C2
C4
C6
C5
C7
C11
MW7IC915N
Rev 3
C13
VD1
C15
C17
Figure 13. MW7IC915NT1 Test Circuit Component Layout — 700 MHz
Table 7. MW7IC915NT1 Test Circuit Component Designations and Values — 700 MHz
Part
Description
Part Number
Manufacturer
C1, C3, C6
2.7 pF Chip Capacitors
ATC100B2R7BT500XT
ATC
C2
0.3 pF Chip Capacitor
ATC100B0R3BT500XT
ATC
C4
4.7 pF Chip Capacitor
ATC100B4R7CT500XT
ATC
C5
5.6 pF Chip Capacitor
ATC100B5R6CT500XT
ATC
C7, C8, C9, C10, C11
47 pF Chip Capacitors
ATC100B470JT500XT
ATC
C12, C13
4.7 F Chip Capacitors
GRM31CR71H475KA12L
Murata
C14, C15
10 F, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C16, C17
100 F, 50 V Electrolytic Capacitors
MCGPR50V107M8X11--RH
Multicomp
R1, R2
2 k, 1/4 W Resistors
CRCW12062K00FKEA
Vishay
PCB
0.020, r = 3.66
RO4350B
Rogers
MW7IC915NT1
10
RF Device Data
Freescale Semiconductor, Inc.
17
16.5
38.4
VDD = 28 Vdc
38.2 Pout = 1.6 W (Avg.), IDQ1 = 50 mA
IDQ2 = 144 mA, Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal PAR = 7.5 dB @
38 0.01% Probability on CCDF
PARC
37.8
16
Gps
--49
--50
IRL
37.6
--51
ACPR
37.4
710
720
730
740
750
760
770
ACPR (dBc)
Gps, POWER GAIN (dB)
38.6
--52
780
--10
--20
--30
--40
790
0.5
0
--0.5
PARC (dB)
17.5
PAE
IRL, INPUT RETURN LOSS (dB)
38.8
PAE, POWER ADDED
EFFICIENCY (%)
TYPICAL CHARACTERISTICS — 700 MHz
--1
f, FREQUENCY (MHz)
Figure 14. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 1.6 Watts Avg.
Gps, POWER GAIN (dB)
40
39
90
--15
80
--20
70
38
768 MHz 748 MHz
37
60
728 MHz
Gps
36
728 MHz
748 MHz
40
748 MHz
768 MHz
35
768 MHz
PAE
ACPR
34
50
30
20
33
1
10
20
--25
--30
--35
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF
PAE, POWER ADDED EFFICIENCY (%)
41
--45
--50
--55
10
Pout, OUTPUT POWER (WATTS) AVG.
Figure 15. Single--Carrier W--CDMA Power Gain, Power Added
Efficiency and ACPR versus Output Power
0
40
30
--10
20
--20
10
--30
0
--10
300
VDD = 28 Vdc
Pin = --30 dBm
IDQ1 = 50 mA
IDQ2 = 144 mA
IRL
600
IRL (dB)
GAIN (dB)
Gain
--40
900
--50
1200
f, FREQUENCY (MHz)
Figure 16. Broadband Frequency Response
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
11
VDD = 28 Vdc, IDQ1 = 50 mA, IDQ2 = 144 mA, Pout = 1.6 W Avg.
Zin
Zload
710
54.61 -- j2.01
9.57 + j6.52
720
55.46 + j0.26
9.95 + j7.04
730
56.75 + j2.12
10.70 + j7.79
740
58.35 + j3.55
11.39 + j8.18
750
60.11 + j4.65
11.41 + j8.07
760
61.83 + j5.22
11.00 + j7.90
770
63.19 + j5.31
10.88 + j7.88
780
64.01 + j4.90
11.41 + j7.87
64.18 + j3.91
12.32 + j7.61
f
MHz
790
Zin
=
Device input impedance as measured from
gate to ground.
Zload =
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance — 700 MHz
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Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
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RF Device Data
Freescale Semiconductor, Inc.
MW7IC915NT1
RF Device Data
Freescale Semiconductor, Inc.
15
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Sept. 2009
Initial Release of Data Sheet
1
Dec. 2009
Table 4, Moisture Sensitivity Level, corrected Package Peak Temperature to 260C, p. 2
2
Dec. 2013
Table 1, Maximum Ratings: increased input power from 4.7 dBm to 17 dBm to reflect the true capability of
the device, p. 2
Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD
ratings are characterized during new product development but are not 100% tested during production. ESD
ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive
devices, p. 2
Table 6, Test Circuit Component Designations and Values: corrected C9, C10 chip capacitor description
from 0.01 to 0.1 pF, p. 5. Table 6 (900 MHz component designations) and Table 7 (700 MHz component
designations): added PCB material information, pp. 5, 10
Replaced Case Outline 98ASA10760D, Rev. O with Rev. A, pp. 13--15. Mechanical outline drawing
modified to reflect the correct lead end features. Format of the mechanical outline was also updated to the
current Freescale format for Freescale mechanical outlines.
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RF Device Data
Freescale Semiconductor, Inc.
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MW7IC915NT1
Document
Number:
RF Device
DataMW7IC915N
Rev.
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