Freescale Semiconductor
Technical Data
Document Number: MWE6IC9080N
Rev. 0, 4/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9080N wideband integrated circuit is designed with on--chip
matching that makes it usable from 865 to 960 MHz. This multi--stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
• Typical GSM Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 =
630 mA, Pout = 80 Watts CW
Frequency
Gps
(dB)
PAE
(%)
920 MHz
29.0
49.7
940 MHz
28.8
51.6
960 MHz
28.5
52.3
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, Pout = 128 Watts CW
(3 dB Input Overdrive from Rated Pout), Designed for Enhanced Ruggedness
• Stable into a 5:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 Watts CW
Pout
• Typical Pout @ 1 dB Compression Point ≃ 90 Watts CW
• Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 230 mA, IDQ2 =
630 mA, Pout = 35 Watts Avg.
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz
30.0
37.0
--62
--75
0.8
940 MHz
30.0
37.8
--62
--75
1.2
960 MHz
29.5
38.0
--62
--75
1.5
MWE6IC9080NR1
MWE6IC9080GNR1
MWE6IC9080NBR1
865--960 MHz, 80 W CW, 28 V
GSM, GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618--02
TO--270 WB--14
PLASTIC
MWE6IC9080NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MWE6IC9080GNR1
CASE 1617--02
TO--272 WB--14
PLASTIC
MWE6IC9080NBR1
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
• On--Chip Matching (50 Ohm Input, DC Blocked)
• Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1)
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
VGS2
VGS1
RFin
RFout/VDS2
VGS1
Quiescent Current
Temperature Compensation (1)
VGS2
VDS1
Figure 1. Functional Block Diagram
NC
VDS1
VGS2
VGS1
NC
RFin
RFin
NC
VGS1
VGS2
VDS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14
RFout /VDS2
13
RFout /VDS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain--Source Voltage
Rating
VDSS
--0.5, +66
Vdc
Gate--Source Voltage
VGS
--0.5, +6
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Input Power
Pin
20.5
dBm
Symbol
Value (2,3)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
RθJC
°C/W
GSM Application
(Case Temperature 80°C,
Pout = 80 W CW, 940 MHz)
Stage 1, 28 Vdc, IDQ1 = 230 mA
Stage 2, 28 Vdc, IDQ2 = 630 mA
3.5
0.52
GSM EDGE Application
(Case Temperature 80°C,
Pout = 40 W CW, 940 MHz)
Stage 1, 28 Vdc, IDQ1 = 230 mA
Stage 2, 28 Vdc, IDQ2 = 630 mA
3.6
0.54
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 33 μAdc)
VGS(th)
1.5
2
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 230 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 230 mAdc, Measured in Functional Test)
VGG(Q)
15
17
19
Vdc
Characteristic
Stage 1 — Off Characteristics
Stage 1 — On Characteristics
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 66 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 270 μAdc)
VGS(th)
1.5
2
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ2 = 630 mAdc)
VGS(Q)
—
2.7
—
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ2 = 630 mAdc, Measured in Functional Test)
VGG(Q)
16.5
18.5
20.5
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 1 Adc)
VDS(on)
0.1
0.45
0.8
Vdc
Characteristic
Stage 2 — Off Characteristics
Stage 2 — On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 80 W CW, IDQ1 = 230 mA, IDQ2 = 630 mA, f = 960 MHz
Power Gain
Gps
27.0
28.5
30.5
dB
Power Added Efficiency
PAE
48.0
52.3
—
%
Input Return Loss
IRL
—
--28
--10
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 80 W CW, IDQ1 = 230 mA,
IDQ2 = 630 mA
Frequency
Gps
(dB)
PAE
(%)
IRL
(dB)
920 MHz
29.0
49.7
--24
940 MHz
28.8
51.6
--28
960 MHz
28.5
52.3
--28
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ1 = 230 mA, IDQ2 = 630 mA, 920--960 MHz Bandwidth
Characteristic
Pout @ 1 dB Compression Point, CW
Symbol
Min
Typ
Max
Unit
P1dB
—
90
—
W
—
28
—
30
—
MHz
—
%
IMD Symmetry @ 100 W PEP, Pout where IMD Third Order
Intermodulation 30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
∆IQT
—
Gain Flatness in 40 MHz Bandwidth @ Pout = 80 W CW
GF
—
0.7
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.039
—
dB/°C
∆P1dB
—
0.008
—
dBm/°C
Quiescent Current Accuracy over Temperature (2)
with 4.12 kΩ Gate Feed Resistors (--30 to 85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Stage 1
Stage 2
MHz
2.6
2.6
1. Part internally matched both on input and output.
2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
(continued)
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Typical GSM EDGE Performances (In Freescale GSM EDGE Test Fixture, 50 ohm system) VDD = 28 Vdc, Pout = 35 W Avg., IDQ1 =
230 mA, IDQ2 = 630 mA, 920--960 MHz EDGE Modulation
Frequency
Gps
(dB)
PAE
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
920 MHz
30.0
37.0
--62
--75
0.8
940 MHz
30.0
37.8
--62
--75
1.2
960 MHz
29.5
38.0
--62
--75
1.5
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
4
RF Device Data
Freescale Semiconductor
VDS1
C22
C17
C7
C8
VDS2
C20
C11
MWE6IC9080N
Rev. 2
C1
C24
C23
C3
C13
R1
C15
C12
C19
VGS1
C16
CUT OUT AREA
C14
C4
C5
C2
C6
C25
VDS2
C21
R2
C10
VGS2
C9
C18
VDS1
*C6 is mounted vertically.
Figure 3. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 6. MWE6IC9080NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1, C2
6.8 pF Chip Capacitors
ATC100B6R8CT500XT
ATC
C3, C4
4.7 pF Chip Capacitors
ATC100B4R7CT500XT
ATC
C5, C7, C8, C9, C10, C11, C12,
C13, C14
33 pF Chip Capacitors
ATC100B330JT500XT
ATC
C6
4.3 pF Chip Capacitor
ATC100B4R3CT500XT
ATC
C15, C16, C17, C18, C19, C20,
C21
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C22, C23
470 μF, 63 V Electrolytic Capacitors, Radial
MCGPR63V477M13X26--RH
Multicomp
C24
0.1 pF Chip Capacitor
ATC100B0R1BT500XT
ATC
C25
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
R1, R2
4.12 KΩ, 1/4 W Chip Resistors
CRCW12064K12FKEA
Vishay
PCB
0.030″, εr = 2.8
IS680–280
Isola
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
64
Gps, POWER GAIN (dB)
60
Gps
56
29
52
PAE
28
48
27
44
26
40
IRL
25
36
32
24
23
PAE, POWER ADDED EFFICIENCY (%)
31
30
VDD = 28 Vdc, Pout = 80 W CW
IDQ1 = 230 mA, IDQ2 = 630 mA
22
820
840
860
880
28
900
920
940
960
--20
--22
--24
--26
--28
24
980
--30
IRL, INPUT RETURN LOSS (dB)
32
f, FREQUENCY (MHz)
31
40
Gps, POWER GAIN (dB)
30
35
Gps
29
30
VDD = 28 Vdc, Pout = 35 W Avg.
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
28
PAE
27
26
25
22
820
1
EVM
23
840
860
2
1.5
IRL
24
25
2.5
0.5
880
900
920
940
960
0
980
--20
--22
--24
--26
--28
IRL, INPUT RETURN
LOSS (dB)
45
EVM, ERROR VECTOR
MAGNITUDE (% rms)
32
PAE, POWER ADDED
EFFICIENCY (%)
Figure 4. Power Gain, Input Return Loss and Power Added
Efficiency versus Frequency @ Pout = 80 Watts CW
--30
f, FREQUENCY (MHz)
Figure 5. Power Gain, Input Return Loss, EVM and Power
Added Efficiency versus Frequency @ Pout = 35 Watts Avg.
IM3--U
--30
IM3--L
--40
IM7--L
60
30
Gps, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ1 = 230 mA
IDQ2 = 630 mA, Two--Tone Measurements
--20 (f1 + f2)/2 = Center Frequency of 940 MHz
IM5--U
IM5--L
--50
Gps
50
920 MHz
940 MHz
960 MHz
29
40
VDD = 28 Vdc
IDQ1 = 230 mA
IDQ2 = 630 mA
28
30
960 MHz
27
20
940 MHz
26
920 MHz
PAE
10
IM7--U
25
--60
0.1
1
10
100
1
100
10
TWO--TONE SPACING (MHz)
Pout, OUTPUT POWER (WATTS) CW
Figure 6. Intermodulation Distortion Products
versus Two--Tone Spacing
Figure 7. Power Gain and Power Added
Efficiency versus Output Power
PAE, POWER ADDED EFFICIENCY (%)
31
--10
0
300
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
4
Pout = 60 W Avg.
3
50 W Avg.
2
35 W Avg.
1
VDD = 28 Vdc
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
--45
--50
--55
920 MHz
--60
--65
--70
--75
900
920
940
980
960
0
EVM, ERROR VECTOR MAGNITUDE (% rms)
VDD = 28 Vdc
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
--60
940 MHz
960 MHz
--70
920 MHz
--75
--80
--85
0
20
40
60
80
100
120
VDD = 28 Vdc
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
8
48
960 MHz
6
36
960 MHz
940 MHz
4
940 MHz
920 MHz
ηD
2
920 MHz
24
12
EVM
0
1
10
100
0
300
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Spectral Regrowth at 600 kHz
versus Output Power
Figure 11. EVM and Drain Efficiency
versus Output Power
0
36
--5
30
GAIN (dB)
120
60
10
Pout, OUTPUT POWER (WATTS)
Gain
24
--10
18
--15
12
--20
VDD = 28 Vdc
Pin = 0 dBm
--25
IDQ1 = 230 mA
IDQ2 = 630 mA
--30
1050 1100
1150
IRL
6
0
750
100
Figure 9. Spectral Regrowth at 400 kHz
versus Output Power
--50
--65
80
Pout, OUTPUT POWER (WATTS)
Figure 8. EVM versus Frequency
--55
60
40
20
ηD, DRAIN EFFICIENCY (%)
0
880
f, FREQUENCY (MHz)
SPECTRAL REGROWTH @ 600 kHz (dBc)
940 MHz
960 MHz
800
850
900
950
1000
IRL (dB)
5
--40
VDD = 28 Vdc
IDQ1 = 230 mA, IDQ2 = 630 mA
EDGE Modulation
SPECTRAL REGROWTH @ 400 kHz (dBc)
EVM, ERROR VECTOR MAGNITUDE (% rms)
6
f, FREQUENCY (MHz)
Figure 12. Broadband Frequency Response
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
7
GSM TEST SIGNAL
--10
Reference Power
--20
VWB = 30 kHz
Sweep Time = 70 ms
RBW = 30 kHz
--30
--40
(dB)
--50
--60
400 kHz
--70
--80
--90
400 kHz
600 kHz
600 kHz
--100
--110
Center 1.96 GHz
200 kHz
Span 2 MHz
Figure 13. EDGE Spectrum
VDD = 28 Vdc, IDQ1 = 230 mA, IDQ2 = 630 mA, Pout = 80 W CW
f
MHz
Zin
Ω
Zload
Ω
820
56.91 -- j7.34
1.22 -- j0.47
840
52.38 -- j6.36
1.26 -- j0.26
860
49.30 -- j5.92
1.35 -- j0.58
880
45.68 -- j4.07
1.44 + j0.14
900
44.22 -- j2.13
1.54 + j0.33
920
42.43 -- j0.62
1.62 + j0.49
940
41.50 + j1.76
1.74 + j0.66
960
42.19 + j3.25
1.91 + j0.82
43.07 + j3.14
2.08 + j0.94
980
Zin
= Device input impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under Test
Z
in
Z
load
Figure 14. Series Equivalent Input and Load Impedance
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
8
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
9
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
10
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
11
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
12
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
13
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
14
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
15
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
16
RF Device Data
Freescale Semiconductor
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RF Device Data
Freescale Semiconductor
17
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Apr. 2010
Description
• Initial Release of Data Sheet
MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
18
RF Device Data
Freescale Semiconductor
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MWE6IC9080NR1 MWE6IC9080GNR1 MWE6IC9080NBR1
RFDocument
DeviceNumber:
Data MWE6IC9080N
Rev. 0, 4/2010
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Semiconductor
19
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MWE6IC9080GNR1 MWE6IC9080NBR1 MWE6IC9080NR1
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