NHS3100
NTAG SmartSensor temperature monitor
Rev. 8.03 — 27 May 2021
1
Product data sheet
General description
The NXP Semiconductors NHS3100 is a member of the NTAG SmartSensor product
family. The IC is optimized for temperature monitoring and logging. It has an embedded
NFC interface, an internal temperature sensor, and a direct battery connection. These
features support an effective system solution with a minimal number of external
components and a single layer foil implementation for temperature monitoring. The
NHS3100 works either battery-powered or NFC-powered.
The embedded Arm Cortex-M0+ offers flexibility to the users of this IC to implement their
own dedicated solution. The NHS3100 contains multiple features, including multiple
power-down modes and a selectable CPU frequency of 8 MHz and down for ultra-low
power consumption.
Users can program this NHS3100 with the industry-wide standard solutions for Arm
Cortex-M0+ processors.
As of September 22, 2017, the NFC forum has certified this device (certification ID:
58516).
CAUTION
Semiconductors are light sensitive. Exposure to light sources can cause the
IC to malfunction. The IC must be protected against light. The protection must
be applied to all sides of the IC.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe
precautions for handling electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,
JESD625-A or equivalent standards.
NHS3100
NXP Semiconductors
NTAG SmartSensor temperature monitor
2
Features and benefits
2.1 System
•
•
•
•
•
Arm Cortex-M0+ processor running at frequencies of up to 8 MHz
Arm Cortex-M0+ built-in nested vectored interrupt controller (NVIC)
Arm serial wire debug (SWD)
System tick timer
IC reset input
2.2 Memory
• 32 kB on-chip flash programming memory
• 4 kB on-chip EEPROM of which 320 bytes are write-protected
• 8 kB SRAM
2.3 Digital peripherals
• Up to 12 general-purpose I/O (GPIO) pins with configurable pull-up/pull-down resistors
and repeater mode
• GPIO pins which can be used as edge and level sensitive interrupt sources
• High-current drivers (sink only; 20 mA) on four GPIO pins
2
• High-current drivers (sink only; 20 mA) on two I C-bus pins
• Programmable watchdog timer (WDT)
2.4 Analog peripherals
• Temperature sensor with:
– ±0.5 °C absolute temperature accuracy between −40 °C and 0 °C
– ±0.3 °C absolute temperature accuracy between 0 °C and +45 °C
– ±0.5 °C absolute temperature accuracy between +45 °C and +85 °C
2.5 Communication interfaces
• NFC/RFID ISO 14443 type A interface; NFC Forum type 2 compatible
2
2
• I C-bus interface supporting full I C-bus specification and fast mode with a data rate of
400 kbit/s, with multiple-address recognition and monitor mode
2.6 Clock generation
• 8 MHz internal RC oscillator, trimmed to 2 %, accuracy, which is used for the system
clock
• Timer oscillator operating at 32 kHz linked to an RTC timer unit
2.7 Power control
•
•
•
•
NHS3100
Product data sheet
Support for 1.72 V to 3.6 V external voltages
The NHS3100 can also be powered from the NFC field.
Activation via NFC possible
Integrated power management unit (PMU) for versatile control of power consumption
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NHS3100
NXP Semiconductors
NTAG SmartSensor temperature monitor
• Four reduced power modes for Arm Cortex-M0+: sleep, deep-sleep, deep power-down,
and battery-off
• Power gating for each analog peripheral for ultra-low power operation
• < 50 nA IC current consumption in battery-off mode at 3.0 V
• Power-on reset (POR)
2.8 General
• Unique device serial number for identification
3
Applications
• Temperature measurement
• Temperature logging
• Cold chain validation
4
Ordering information
Table 1. Ordering information
Type number
Package
Name
Description
Version
NHS3100
HVQFN24
plastic thermal enhanced very thin quad flat package; no leads;
24 terminals; body 4 × 4 × 0.85 mm
SOT616-3
NHS3100UK
WLCSP25
wafer level chip-scale package; 25 balls; 2.51 × 2.51 × 0.5 mm
SOT1401-1
NHS3100W8
bumped die
bumped die with 8 functional bumps; 2.51 × 2.51 × 0.16 mm
SOT1870-1
5
Marking
Table 2. Marking codes
NHS3100
Product data sheet
Type number
Marking code
NHS3100
NHS3100
NHS3100UK
NHS3100
NHS3100W8
no marking code
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NTAG SmartSensor temperature monitor
6
Block diagram
Figure 1 shows the internal block diagram of the NHS3100. It includes a power
management unit (PMU), clocks, timers, a digital computation, a control cluster (Arm
Cortex-M0+ and memories), and AHB/APB slave modules.
PADS
POWER
PADS
DIGITAL
SWITCH
MATRIX
32 kHz FRO
8 MHz FRO
WAKE-UP
TIMER
CLOCK
SHOP
I2C-BUS
LDO (1.2 V)
INTERNAL
POWER
SWITCHES
LDO (1.6 V)
POR
8 kB SRAM
32 kB FLASH
SPI
TIMERS
WATCHDOG
SYSCONFIG
GPIO
4 kB EEPROM
IOCONFIG
MFIO
(DIGITAL)
I2C-BUS
EXTERNAL
POWER
SWITCH
EEPROM
CONTROL
FLASH
CONTROL
PMU
ARM M0+
AHB-APB BRIDGE
TEMPERATURE
SENSOR
NFC/RFID
HIGH
DRIVE
aaa-015348
Figure 1. NHS3100 block diagram
NHS3100
Product data sheet
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NTAG SmartSensor temperature monitor
7
Pinning
The pin functionality depends on the particular configuration of the chip and is
application-dependent. Pin functions are software-assigned through the IOCON
configuration registers. The sections below show the pinning of the packages.
7.1 HVQFN24
19 LB
20 LA
21 (reserved)
22 (reserved)
terminal 1
index area
23 (reserved)
24 (reserved)
Figure 2 shows the pad layout of the NHS3100 in the HVQFN24 package.
PIO0_0/WAKEUP
1
18 (reserved)
PIO0_1/CLKOUT
2
17 (reserved)
PIO0_2/SSEL
3
16 PIO0_11/CT32B_M1/SWDIO
PIO0_6/SCLK
4
PIO0_8/MISO
5
PIO0_9/MOSI
6
15 PIO0_10/CT32B_M0/SWCLK
25 VSS
14 PIO0_3/CT16B_M0
PIO0_5/SDA 12
9
RESETN
PIO0_4/SCL 11
8
VSS
(reserved) 10
7
VDDBAT
13 PIO0_7/CT16B_M1
aaa-015349
Transparent top view
Figure 2. Pin configuration HVQFN24
Table 3. Pad allocation table of the HVQFN24 package
Pad
1
2
3
4
5
PIO0_0/WAKEUP
PIO0_1/CLKOUT
PIO0_2/SSEL
PIO0_6/SCLK
PIO0_8/MISO
13
PIO0_7/CT16B_M1
14
[1]
PIO0_3/CT16B_M0
15
[1]
PIO0_10/CT32B_M0/SWCLK
16
[1]
PIO0_11/CT32B_M1/SWDIO
17
[2]
(reserved)
[2]
(reserved)
18
7
VDDBAT
19
8
VSS
20
11
12
[1]
[2]
RESETN
(reserved)
PIO0_4/SCL
PIO0_5/SDA
Symbol
[1]
PIO0_9/MOSI
10
Product data sheet
Pad
6
9
NHS3100
Symbol
LB
LA
21
[2]
(reserved)
22
[2]
(reserved)
23
[2]
(reserved)
24
[2]
(reserved)
High source current pads. See Section 8.6.3.
These pads must be tied to ground.
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NTAG SmartSensor temperature monitor
Table 4. Pad description of the HVQFN24 package
Pad
Symbol
Type
Description
VDDBAT
supply positive supply voltage
VSS
supply ground
PIO0_0
I/O
GPIO
WAKEUP
I
Deep power-down mode wake-up pin
PIO0_1
I/O
GPIO
CLKOUT
O
clock output
PIO0_2
I/O
GPIO
SSEL
I
SPI/SSP serial select line
PIO0_3
I/O
GPIO
Supply
7
8
[1]
GPIO
1
2
3
14
11
12
4
13
5
6
15
16
CT16B_M0 O
16-bit timer match output 0
PIO0_4
I/O
GPIO
SCL
I/O
I C SCL clock line
PIO0_5
I/O
GPIO
SDA
I/O
I C SDA data line
PIO0_6
I/O
GPIO
SCLK
I/O
SPI/SSP serial clock line
PIO0_7
I/O
GPIO
[2]
[3]
2
[3]
2
CT16B_M1 O
16-bit timer match output 1
PIO0_8
I/O
GPIO
MISO
O
SPI/SSP master-in slave-out line
PIO0_9
I/O
GPIO
MOSI
I
SPI/SSP master-out slave-in line
PIO0_10
I/O
GPIO
CT32B_M0 O
32-bit timer match output 0
SWCLK
I
Arm SWD clock
PIO0_11
I/O
GPIO
CT32B_M1 O
32-bit timer match output 1
SWDIO
I/O
Arm SWD I/O
20
LA
A
NFC antenna/coil terminal A
19
LB
A
NFC antenna/coil terminal B
Radio
NHS3100
Product data sheet
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NTAG SmartSensor temperature monitor
Table 4. Pad description of the HVQFN24 package...continued
Pad
Symbol
Type
Description
RESETN
I
external reset input
Reset
9
[1]
[4]
The GPIO port is a 12-bit I/O port with individual direction and function controls for each bit. The operation of port 0 pads
depends on the function selected through the IOCONFIG register block.
If external wake-up is enabled on this pin, it must be pulled HIGH before entering deep power-down mode. To exit deep
power-down mode, it must be pulled LOW for a minimum of 100 μs.
Open drain, no pull-up or pull down.
A LOW on this pad resets the device. This reset causes I/O ports and peripherals to take on their default states, and
processor execution to begin at address 0. It has weak pull-up to VBAT or internal NFC voltage (whichever is highest).
[2]
[3]
[4]
7.2 WLCSP25
Figure 3 shows the ball layout of the NHS3100 in the WLCSP25 package.
ball A1
index area
NHS3100UK
1
2
3
4
5
A
B
C
D
E
aaa-024187
Transparent top view
Figure 3. Ball configuration WLCSP25
Table 5. Ball allocation table of the WLCSP25 package
Ball
A1
Symbol
[1]
PIO0_7/CT16B_M1
[1]
C4
A2
VSS
C5
PIO0_11/CT32B_M1/SWDIO
A3
RESETN
D1
PIO0_0/WAKEUP
A4
PIO0_4/SCL
D2
PIO0_1/CLKOUT
[2]
(reserved)
[2]
(reserved)
[2]
(reserved)
E1
[2]
(reserved)
E2
[2]
(reserved)
PIO0_10/CT32B_M0/SWCLK
E3
[2]
(reserved)
PIO0_2/SSEL
E4
PIO0_5/SDA
B1
D3
PIO0_8/MISO
B2
D4
PIO0_9/MOSI
B3
D5
(reserved)
B4
[1]
B5
[1]
C1
Product data sheet
Ball
VDDBAT
A5
NHS3100
Symbol
PIO0_3/CT16B_M0
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LA
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NXP Semiconductors
NTAG SmartSensor temperature monitor
Table 5. Ball allocation table of the WLCSP25 package...continued
Ball
Symbol
Ball
Symbol
C2
PIO0_6/SCLK
E5
LB
C3
VSS
-
-
[1]
[2]
High source current balls. See Section 8.6.3.
These balls must be tied to ground.
Table 6. Ball description of the WLCSP25 package
Ball
Symbol
Type
Description
VDDBAT
supply positive supply voltage
Supply
A1
A2, C3 VSS
supply ground
[1]
GPIO
D1
D2
C1
B4
A4
A5
C2
C4
B1
B2
B5
NHS3100
Product data sheet
PIO0_0
I/O
GPIO
WAKEUP
I
deep power-down mode wake-up pin
PIO0_1
I/O
GPIO
CLKOUT
O
clock output
PIO0_2
I/O
GPIO
SSEL
I
SPI/SSP serial select line
PIO0_3
I/O
GPIO
[2]
CT16B_M0 O
16-bit timer match output 0
PIO0_4
I/O
GPIO
SCL
I/O
I C SCL clock line
PIO0_5
I/O
GPIO
SDA
I/O
I C SDA data line
PIO0_6
I/O
GPIO
SCLK
I/O
SPI/SSP serial clock line
PIO0_7
I/O
GPIO
[3]
2
[3]
2
CT16B_M1 O
16-bit timer match output 1
PIO0_8
I/O
GPIO
MISO
O
SPI/SSP master-in slave-out line
PIO0_9
I/O
GPIO
MOSI
I
SPI/SSP master-out slave-in line
PIO0_10
I/O
GPIO
CT32B_M0 O
32-bit timer match output 0
SWCLK
Arm SWD clock
I
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NXP Semiconductors
NTAG SmartSensor temperature monitor
Table 6. Ball description of the WLCSP25 package...continued
Ball
Symbol
Type
Description
C5
PIO0_11
I/O
GPIO
CT32B_M1 O
32-bit timer match output 1
SWDIO
I/O
Arm SWD I/O
E4
LA
A
NFC antenna/coil terminal A
E5
LB
A
NFC antenna/coil terminal B
RESETN
I
external reset input
Radio
Reset
A3
[1]
[2]
[3]
[4]
[4]
The GPIO port is a 12-bit I/O port with individual direction and function controls for each bit. The operation of port 0 pins
depends on the function selected through the IOCONFIG register block.
If external wake-up is enabled on this pin, it must be pulled HIGH before entering deep power-down mode. To exit deep
power-down mode, it must be pulled LOW for a minimum of 100 μs.
Open drain, no pull-up or pull-down.
A LOW on this pin resets the device. This reset causes I/O ports and peripherals to take on their default states and
processor execution to begin at address 0. It has weak pull-up to Vdd or internal NFC voltage (whichever is highest).
7.3 NHS3100W8
Figure 4 shows the bump layout of the NHS3100W8 gold bump version.
2
3
4
1
12
11
10
5
6
9
8
7
pin numbering
aaa-025706
Figure 4. Bump configuration Bump die: Top view, bumps up
Table 7. Bump allocation table of the NHS3100W8 package
NHS3100
Product data sheet
Bump Symbol
Bump Symbol
1
PIO0_0/WAKEUP
7
TP1
2
TP0
8
VSS
3
LA
9
VDDBAT
4
LB
10
PIO0_6
5
PIO0_11/CT32B_M1/SWDIO
11
TP2
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NTAG SmartSensor temperature monitor
Table 7. Bump allocation table of the NHS3100W8 package...continued
Bump Symbol
Bump Symbol
6
12
PIO0_10/CT32B_M0/SWCLK
TP3
Table 8. Bump description of the NHS3100W8 package
Bump
Symbol
Type
Description
VDDBAT
supply positive supply voltage
VSS
supply ground
PIO0_0
I/O
GPIO
WAKEUP
I
Deep power-down mode wake-up pin
10
PIO0_6
I/O
GPIO
6
PIO0_10
I/O
GPIO
Supply
9
8
[1]
GPIO
1
5
CT32B_M0 O
32-bit timer match output 0
SWCLK
I
Arm SWD clock
PIO0_11
I/O
GPIO
CT32B_M1 O
32-bit timer match output 1
SWDIO
I/O
Arm SWD I/O
3
LA
A
NFC antenna/coil terminal A
4
LB
A
NFC antenna/coil terminal B
[2]
Radio
Test pins
2
TP0
-
test pin - do not connect
7
TP1
-
test pin - do not connect, or connect to ground
11
TP2
-
test pin - do not connect
12
TP3
-
test pin - do not connect
[1]
[2]
NHS3100
Product data sheet
The GPIO port is a 12-bit I/O port with individual direction and function controls for each bit. The operation of port 0 balls
depends on the function selected through the IOCONFIG register block.
If external wake-up is enabled on this ball, it must be pulled HIGH before entering deep power-down mode and pulled
LOW for a minimum of 100 μs to exit deep power-down mode.
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NTAG SmartSensor temperature monitor
8
Functional description
8.1 Arm Cortex-M0+ core
See the Cortex-M0+ Devices Technical Reference Manual (Ref. 1) for a detailed
description of the Arm Cortex-M0+ processor.
The NHS3100 Arm Cortex-M0+ core has the following configuration:
• System options
– Nested vectored interrupt controller (NVIC)
– Fast (single-cycle) multiplier
– System tick timer
– Support for wake-up interrupt controller
– Vector table remapping register
– Reset of all registers
• Debug options
– Serial wire debug (SWD) with two watchpoint comparators and four breakpoint
comparators
– Halting debug is supported
8.2 Memory map
Figure 5 shows the memory and peripheral address space of the NHS3100.
The only AHB peripheral device on the NHS3100 is the GPIO module. The APB
peripheral area is 512 kB in size. Each peripheral is allocated 16 kB of space.
All peripheral register addresses are 32-bit word aligned. Byte and halfword addressing is
not possible. All reading and writing are done per full word.
NHS3100
Product data sheet
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NHS3100
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NTAG SmartSensor temperature monitor
0xFFFF FFFF
(reserved)
0xE020 0000
0xE01F FFFF
0x501F FFFF
(reserved)
private peripheral bus
0x5001 0000
0x5000 FFFF
0xE000 0000
0xDFFF FFFF
GPIO PIO0
(reserved)
0x5000 0000
0x5020 0000
0x501F FFFF
AHB peripherals
AHB peripherals
0x5000 0000
0x4FFF FFFF
(reserved)
0x4008 0000
0x4007 FFFF
(reserved)
APB peripherals
0x4000 0000
0x3FFF FFFF
0x4006 0000
temperature sensor
0x4005 8000
RFID/NFC
0x4005 4000
RTC timer
0x4004 8000
system configuration
0x4004 4000
IOCONFIG
(reserved)
(reserved)
0x3000 1000
0x3000 0FFF
(reserved)
4 kB EEPROM
0x3000 0000
0x2FFF FFFF
(reserved)
0x1000 2000
0x1000 1FFF
0x4004 0000
SPI/SSP
0x4003 C000
flash controller
0x4003 8000
PMU
0x4003 4000
EEPROM controller
0x4001 4000
32-bit timer
0x4000 C000
16-bit timer
0x4000 4000
watchdog timer
0x4000 0000
l2C-bus
(reserved)
8 kB SRAM
0x1000 0000
0x0FFF FFFF
(reserved)
(reserved)
(reserved)
0x0000 8000
0x0000 7FFF
32 kB on-chip flash
0x0000 0000
APB peripherals
aaa-017231
Figure 5. NHS3100 memory map
8.3 System configuration
The system configuration APB block controls oscillators, start logic, and clock generation
of the NHS3100. A register for remapping the interrupt vector table is also included in this
block.
8.3.1 Clock generation
The NHS3100 clock generator unit (CGU) includes two independent RC oscillators.
These oscillators are the system free-running oscillator (SFRO) and the timer freerunning oscillator (TFRO).
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NTAG SmartSensor temperature monitor
The SFRO runs at 8 MHz from which the system clock is derived. The system clock can
be set to 8 MHz, 4 MHz, 2 MHz, 1 MHz, 500 kHz, 250 kHz, 125 kHz, or 62.5 kHz.
Note: Some features are not available when using the lower clock speeds.
The TFRO runs at 32.768 kHz and is the clock source for the timer unit. The TFRO
cannot be disabled.
Following reset, the NHS3100 starts operating at the default 500 kHz system clock
frequency to minimize dynamic current consumption during the boot cycle.
The SYSAHBCLKCTRL register gates the system clock to the various peripherals and
memories. The temperature sensor receives a fixed clock frequency, irrespective of the
system clock divider settings, while the digital part uses the system clock (AHB clock 0).
SYSCLKDIV[2:0]
system clock (AHB clock 0)
SYSTEM CLOCK
DIVIDER
SYSTEM FRO
(8 MHz)
peripheral clocks
SYSAHBCLKCTRL
SYSCLKTRIM
fixed-frequency taps
analog peripheral clocks
SSPCLKDIV
SPI/SSP CLOCK
DIVIDER
WATCHDOG CLOCK
DIVIDER
0
WDTSEL
SPI/SSP
WDT_PCLK
WDTCLKDIV
PMU/always-on-domain
TIMER FRO
(32 kHz)
wake-up timer
TMRCLKTRIM
0
TMRUEN
aaa-015352
Figure 6. NHS3100 clock generator block diagram
8.3.2 Reset
Reset has three sources on the NHS3100:
• RESETN pin
• Watchdog reset
• Software reset
8.4 Power management
The power management unit (PMU) controls the switching between available power
sources and the powering of the different voltage domains in the IC.
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NHS3100
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8.4.1 System power architecture
The NHS3100 accepts power from two different sources: from the external power supply
pin VDDBAT or from the built-in NFC/RFID rectifier.
The NHS3100 has a small automatic source selector that monitors the power inputs
(VBAT and VNFC, see Figure 7) as well as pin RESETN. The PSWBAT switch is kept
open until a trigger is given on pin RESETN or via the NFC field. If the trigger is given,
the always-on domain, VDD_ALON, itself is powered via the PSWBAT or the PSWNFC
switch: via VBAT, if VBAT > 1.72 V, or VNFC. Priority is given to VBAT when both VBAT
and VNFC are present.
The automatic source selector unit in the PMU decides on the powering of the internal
domains based on the power source.
• If a voltage > 1.72 V is detected on VBAT and not VNFC, VBAT powers the internal
domains after a trigger on pin RESETN or via NFC.
• If a voltage ≤ 1.72 V is detected on VBAT, and a higher voltage is detected on VNFC,
the internal domains are powered from VNFC.
• If a voltage > 1.72 V is detected at both VBAT and VNFC, the internal domains are
powered from VBAT.
• Switch-over between power sources is possible. If both VBAT and VNFC are available
initially, the system is powered from VBAT. If VBAT then becomes unavailable (because
it is switched off externally, or by a PSWBAT/PSWNFC power switch override), the
internal domains are immediately powered from VNFC. Switchover is supported in both
directions.
• The user can force the selection of the VBAT input by disabling the automatic power
switch, which disables the automatic source selector voltage comparator.
When on NFC power only (passive operation), connect one or more 100 nF external
capacitors in parallel to a GPIO pad and set that pad as an output driven to logic 1.
Choosing a high-drive pin is preferred. Several pins can be connected in parallel.
PSWNFC and PSWBAT are the power switches. When an RF field is present, PSWNFC
connects power to the VDD_ALON power net. When a positive edge is detected on
RESETN, PSWBAT connects power from the battery. If no RF power is available, the
PMU can open this PSWBAT switch, effectively switching off the device. After connecting
VDDBAT to a power source, the PSWBAT switch is open until a rising edge is detected
on RESETN or RF power is applied.
Each component of the NHS3100 resides in one of several internal power domains,
as indicated in Figure 7. The domains are VBAT, VNFC, VDD_ALON, VDD1V2 and
VDD1V6. The domains VDD_ALON, VDD1V2 and VDD1V6 are either powered or not
powered, depending on the mode of the NHS3100. There are 5 modes:
•
•
•
•
•
Active
Sleep
Deep-sleep
Deep power-down
Battery-off
The VDD_ALON domain contains brownout detection (BOD). When this feature is
enabled, it raises a BOD interrupt if the VDD_ALON voltage drops below 1.8 V.
The PMU controls the active, sleep, deep-sleep, and deep power-down modes and so
also the power flow to the different internal components.
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The PMU has two LDOs powering the internal VDD1V2 and VDD1V6 voltage domains.
LDO1V2 converts voltages in the range 1.72 V to 3.6 V to 1.22 V. LDO1V6 converts
voltages in the range 1.72 V to 3.6 V to 1.6 V. Each LDO can be enabled separately.
When powered via VNFC, a 1.2 nF buffer capacitor is included at the input of the LDOs.
To allow for long shelf life before activation, the trigger detector (not shown in Figure 7)
and the power gate have a leakage of less than 50 nA.
LA
NFC core
LB
VDDBAT
VNFC
< 1.85 V
VBAT
1.72 V to 3.6 V
PSWNFC
1.6 V
LDO1V6
PSWBAT
ANALOG
PERIPHERALS,
FLASH MEMORY
EEPROM MEMORY
1.72 V to 3.6 V
AUTOMATIC SOURCE SELECTOR UNIT
VDD_ALON
ALWAYS-ON DOMAIN
75 kΩ
32 kHz FRO
RESETN
RTC
PMU
PIO0_0
WAKEUP
LDO1V2
BOD
GPREGx
pin mode override if PCON.WAKEUP set,
when entering Deep power-down mode
1.2 V
DIGITAL CORE
PERIPHERALS
SFRO
aaa-019962
Figure 7. NHS3100 power architecture
The PMU states and settings of the LDOs are summarized in Table 9. Figure 8 shows the
state transitions.
Table 10 and Table 11 summarize the events that can influence wake-up from deep
power-down or deep-sleep modes (DEEPPDN or DEEPSLEEP to ACTIVE state
transition).
Table 9. IC power states
State
VDD_ALON
Deep power[1]
down mode
BATTERY-OFF (No power)
no
X
ACTIVE
yes
DEEPPDN
SLEEP/DEEPSLEEP
[1]
[2]
LDO1 (1.2 V)
LDO2 (1.6 V)
X
off
off
0
0
on
on
yes
1
0
off
off
yes
0
1
on
on
[2]
sleep or deepsleep mode
[2]
DPDN indicates whether the system is in deep power-down mode.
X = don't care.
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BATTERY-OFF
ACTIVE
SLEEP OR
DEEP-SLEEP
DEEP
POWER-DOWN
aaa-019373
Figure 8. PMU state transition diagram
Figure 9 shows the power-up sequence. Applying battery power when the PSWBAT
switch is closed or NFC power becomes available, provides the always-on part with a
power-on reset (POR) signal. The TFRO is initiated which starts a state machine in the
PMU. In the first state, the LDO1V2 powering the digital domain is started. In the second
state, the LDO1V6 powering the analog domain is started which starts the flash memory.
Enabling the LDO1V2, and the SFRO stabilizing, triggers the system_por. The system is
now considered to be ‘on’. When the flash memory is fully operational, the system can
boot.
The total start-up time from trigger to active mode/boot is about 2.5 ms.
If there is no battery power, but RF power is available, the same procedure is followed
except that PSWNFC connects power to the LDOs.
The user cannot disable the TFRO as it is used by the PMU.
Table 10. State transition events for DEEP SLEEP to ACTIVE
Event
Description
RESETN
reset asserted
RTC event
if the timer reaches preset value
Watchdog
watchdog issues interrupt or reset
WAKEUP
signal on WAKEUP pin
RF field
RF field is detected, potential NFC command input (if set in PMU)
Start logic interrupt
one of the enabled start logic interrupts is asserted
Table 11. State transition events for DEEP POWER DOWN to ACTIVE
NHS3100
Product data sheet
Event
Description
RESETN
reset asserted
RTC event
if the timer reaches preset value
WAKEUP
signal on WAKEUP pin (when enabled)
RF field
RF field is detected, potential NFC command input (if set in PMU)
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VDD_ALON
off
POR always-on
domain
start TFRO
enable 1.2 V LDO
enable 1.6 V LDO
for analog domain
and flash memory
SFRO starts running
power
flash and
digital
power
analog
SFRO stable (64 µs)
system_por
on
aaa-016479
Figure 9. NHS3100 power-up sequence
8.4.2 Power management unit (PMU)
The power management unit (PMU) partly resides in the digital power domain and partly
in the always-on domain. The PMU controls the sleep, deep-sleep, and deep powerdown modes and the power flow to the different internal circuit blocks. Five generalpurpose registers in the PMU can be used to retain data during deep power-down mode.
These registers are located in the always-on domain. If VDD_ALON drops to below 1.8 V,
the PMU also raises a BOD interrupt when it is configured.
The power to the different APB analog slaves is controlled through a power-down
configuration register.
The power control register selects if an Arm Cortex-M0+ controlled power-down mode
(sleep mode or deep-sleep mode) or the deep power-down mode is entered. It also
provides the flags for sleep or deep-sleep and deep power-down modes, respectively. In
addition, it contains the overrides for the power source selection.
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8.5 Nested vectored interrupt controller (NVIC)
The nested vectored interrupt controller (NVIC) is a part of the Arm Cortex-M0+. The
tight integration of the processor core and NVIC enables fast processing of interrupts,
dramatically reducing the interrupt latency.
8.5.1 Features
•
•
•
•
•
NVIC that is a part of the Arm Cortex-M0+
Tightly coupled interrupt controller provides low interrupt latency
Controls system exceptions and peripheral interrupts
Four programmable interrupt priority levels with hardware priority level masking
Software interrupt generation
8.5.2 Interrupt sources
Table 12 lists the interrupt sources for each peripheral function. Each peripheral device
may have one or more interrupt lines to the nested vectored interrupt controller (NVIC).
Each line may represent more than one interrupt source. There is no significance or
priority about which line is connected where, except for certain standards from Arm.
Table 12. Connection of interrupt source to the nested vectored interrupt controller
Exception Vector Function
number
offset
Flags
0 to 12
-
start logic wake-up interrupts
each interrupt connected to a PIO0 input pin
[1]
serves as wake-up from deep-sleep mode
13
-
RFID/NFC
RFID/NFC access detected/command
received/read acknowledge
14
-
RTC On/Off timer
RTC on/off timer event interrupt
15
-
I C
slave input (SI) (state change)
16
-
CT16B
16-bit timer
17
-
PMU
power from NFC field detected
18
-
CT32B
32-bit timer
19
-
BOD
brownout detection (power drop)
20
-
SPI/SSP
TX FIFO half empty/RX FIFO half full/RX
time-out/RX overrun
21
-
TSENS
temperature sensor end of conversion/low
threshold/high threshold
22 to 25
-
-
(reserved)
26
-
WDT
watchdog interrupt (WDINT)
27
-
flash
flash memory
28
-
EEPROM
EEPROM memory
29 to 30
-
-
(reserved)
31
-
PIO0
GPIO interrupt status of port 0
[1]
NHS3100
Product data sheet
2
Interrupt 0 to 10 correspond to PIO0_0 to PIO0_10; Interrupt 11 corresponds to RFID/NFC external access; Interrupt 12
corresponds to the RTC on/off timer.
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8.6 I/O configuration
The I/O configuration registers control the electrical characteristics of the pads. The
following features are programmable:
•
•
•
•
Pin function
Internal pull-up/pull-down resistor or bus keeper function
Low-pass filter
2
2
I C-bus mode for pads hosting the I C-bus function
The IOCON registers control the function (GPIO or peripheral function), the input mode,
2
and the hysteresis of all PIO0_m pins. In addition, the I C-bus pins can be configured for
2
different I C-bus modes.
The FUNC bits in the IOCON registers can be set to GPIO (FUNC = 000) or to a
peripheral function. If the pins are GPIO pins, the GPIO0DIR registers determine if the
pin is configured as an input or output. For any peripheral function, the pin direction
is controlled automatically depending on the functionality of the pin. The GPIO0DIR
registers have no effect on peripheral functions.
8.6.1 PIO0 pin mode
The MODE bits in the IOCON register allow the selection of on-chip pull-up or pulldown resistors for each pin or to select the repeater mode. The possible on-chip resistor
configurations are pull-up enabled, pull-down enabled, or no pull-up/pull-down. The
default value is no pull-up or pull-down enabled. When the pin is at logic 1, the repeater
mode enables the pull-up resistor. When the pin is at logic 0, it enables the pull-down
resistor. If this mode is configured as an input and is not driven externally, it causes the
pin to retain its last known state. The state retention is not applicable to the deep powerdown mode. Repeater mode is typically used to prevent a pin from floating when it is
temporarily not driven. Allowing it to float can use significant power.
2
8.6.2 PIO0 I C-bus mode
2
2
If the FUNC bits of registers PIO0_4 and PIO0_5 select the I C-bus function, the I C-bus
2
pins can be configured for different I C-bus modes:
2
• Standard-mode/Fast-mode I C-bus with input glitch filter (including an open-drain
2
output according to the I C-bus specification)
• Standard open-drain I/O functionality without input filter
8.6.3 PIO0 current source mode
PIO0_3, PIO0_7, PIO0_10, and PIO0_11 are high-source pads that can deliver up to
20 mA to the load. These PIO pins can be set to either digital mode or analog current
sink mode. In digital mode, the output voltage of the pad switches between VSS and
VDD. In analog current drive mode, the output current sink switches between the values
set by the ILO and IHI bits. The maximum pad voltage is limited to 5 V.
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CDRIVE
configured
as output
ESD
data output
PIN
ESD
CURRENT
SINK
ILO[7:0]
IHI[7:0]
pull-up enable
configured
as input
repeater mode
enable
pull-up enable
data input
aaa-015353
Figure 10. Pin configuration with current source mode
8.7 Fast general-purpose parallel I/O
The general-purpose I/O (GPIO) registers control device pins that are not connected to
a specific peripheral function. Pins may be dynamically configured as inputs or outputs.
Multiple outputs can be set or cleared in one write operation.
The NHS3100 uses accelerated GPIO functions:
• GPIO registers are on the Arm Cortex-M0+ I/O bus for fastest possible single-cycle I/O
timing
• An entire port value can be written in one instruction
• Mask, set, and clear operations are supported for the entire port
All GPIO port pins are fixed pin functions. The switch matrix enables or disables these
functions on the pins. So, each GPIO port pin is assigned to one specific pin and cannot
be moved to another pin.
8.7.1 Features
• Bit level port registers allow a single instruction to set and clear any number of bits in
one write operation
• Direction control of individual bits
• After reset, all I/Os default to GPIO inputs without pull-up or pull-down resistors. The
2
I C-bus true open-drain pins PIO0_4 and PIO0_5 and the SWD pins PIO0_10 and
PIO0_11 are exceptions
• Pull-up/pull-down configuration, repeater, and open-drain modes can be programmed
through the IOCON block for each GPIO pin
• Direction (input/output) can be set and cleared individually
• Pin direction bits can be toggled
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2
8.8 I C-bus controller
8.8.1 Features
2
Standard I C-bus compliant (Ref. 3) interfaces may be configured as master, slave, or
master/slave.
• Arbitration is handled between simultaneously transmitting masters without corruption
of serial data on the bus
2
• Programmable clock allows adjustment of I C-bus transfer rates
• Data transfer is bidirectional between masters and slaves
• Serial clock synchronization allows devices with different bit rates to communicate via
one serial bus
• Serial clock synchronization is used as a handshake mechanism to suspend and
resume serial transfer
• Supports standard mode (100 kbit/s) and fast mode (400 kbit/s)
• Optional recognition of up to four slave addresses
2
• Monitor mode allows observing all I C-bus traffic, regardless of slave address
2
• The I C-bus can be used for test and diagnostic purposes
2
2
• The I C-bus contains a standard I C-bus compliant interface with two pins
2
• Possibility to wake up NHS3100 on matching I C-bus slave address
8.8.2 General description
2
Two types of data transfers are possible on the I C-bus, depending on the state of the
direction bit (R/W):
• Data transfer from a master transmitter to a slave receiver
The first byte transmitted by the master is the slave address. Next follows a number of
data bytes. The slave returns an acknowledge bit after each received byte.
• Data transfer from a slave transmitter to a master receiver
The master transmits the first byte (the slave address). The slave then returns an
acknowledge bit. The slave then transmits the data bytes to the master. The master
returns an acknowledge bit after all received bytes other than the last byte. At the end
of the last received byte, a not-acknowledge is returned. The master device generates
all of the serial clock pulses and the START and STOP conditions. A transfer is ended
with a STOP condition or with a repeated START condition. As a repeated START
2
condition is also the beginning of the next serial transfer, the I C-bus is not released.
2
The I C-bus interface is byte oriented and has four operating modes:
•
•
•
•
Master transmitter mode
Master receiver mode
Slave transmitter mode
Slave receiver mode
2
2
The I C-bus interface is completely I C-bus compliant. It supports power-off of the
2
NHS3100 independent of other devices on the same I C-bus.
2
The I C-bus interface requires a minimum 2 MHz system clock to operate in normal
mode. It requires 8 MHz for fast mode.
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2
8.8.3 I C-bus pin description
2
Table 13. I C-bus pin description
Pin
Type
Description
SDA
I/O
I C-bus serial data
SCL
I/O
I C-bus serial clock
2
2
2
The I C-bus pins must be configured through the PIO0_4 and PIO0_5 registers
2
for standard mode or fast mode. The I C-bus pins are open-drain outputs and fully
2
compatible with the I C-bus specification.
8.9 SPI controller
8.9.1 Features
• Compatible with Motorola SPI, 4-wire Texas Instruments Synchronous Serial Interface
(SSI), and National Semiconductor Microwire buses
• Synchronous serial communication
• Supports master or slave operation
• Eight-frame FIFOs for both transmit and receive
• 4-bit to 16-bit frame
8.9.2 General description
The SPI/SSP is a synchronous serial port (SSP) controller capable of operation on an
SPI, 4-wire SSI, or Microwire bus. It can interact with multiple masters and slaves on the
bus. Only a single master and a single slave can communicate on the bus during a given
data transfer. Data transfers are in principle full duplex, with frames of 4 bits to 16 bits of
bidirectional data flowing between master and slave. In practice, often only one of these
two data flows carries meaningful data.
8.9.3 Pin description
Table 14. SPI pin description
Pin
name
Type
Interface
pin SPI
SSI
Microwire Description
SCLK
I/O
SCLK
CLK
SK
serial clock
SSEL
I/O
SSEL
FS
CS
frame sync/slave select
MISO
I/O
MISO
DR (M)
DX (S)
SI (M)
SO (S)
master input slave output
MOSI
I/O
MOSI
DX (M)
DR (S)
SO (M)
SI (S)
master output slave input
8.9.3.1 Pin detailed description
Serial clock
SCK/CLK/SK is a clock signal used to synchronize the transfer of data. The master
drives the clock signal and the slave receives it. When SPI/SSP interface is used, the
clock is programmable to be active HIGH or active LOW, otherwise it is always active
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HIGH. SCK only switches during a data transfer. At any other time, the SPI/SSP interface
either stays in its inactive state or is not driven (remains in high-impedance state).
Frame sync/slave select
When the SPI/SSP interface is a bus master, it drives this signal to an active state before
the start of serial data. It then releases it to an inactive state after the data has been
sent. The active state can be HIGH or LOW depending upon the selected bus and mode.
When the SPI/SSP interface is a bus slave, this signal qualifies the presence of data from
the master according to the protocol in use.
When there is only one master and slave, the master signals, frame sync, or slave select,
can be connected directly to the corresponding slave input. When there are multiple
slaves, further qualification of frame sync/slave select inputs is normally necessary to
prevent more than one slave from responding to a transfer.
Master input slave output (MISO)
The MISO signal transfers serial data from the slave to the master. When the SPI/SSP
is a slave, it outputs serial data on this signal. When the SPI/SSP is a master, it clocks in
serial data from this signal. It does not drive this signal and leaves it in a high-impedance
state when the SPI/SSP is a slave and not selected by FS/SSEL.
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Master output slave input (MOSI)
The MOSI signal transfers serial data from the master to the slave. When the SPI/SSP
is a master, it outputs serial data on this signal. When the SPI/SSP is a slave, it clocks in
serial data from this signal.
8.10 RFID/NFC communication unit
8.10.1 Features
•
•
•
•
•
ISO/IEC14443A part 1 to part 3 compatible
MIFARE (Ultralight) EV1 compatible
NFC Forum Type 2 compatible
Easy interfacing with standard user memory space READ/WRITE commands
Passive operation possible
8.10.2 General description
The RFID/NFC interface allows communication using 13.56 MHz proximity signaling.
APB
LA
RFID
ANALOG
INTERFACE
LB
RFID
ANALOG
SUBSYSTEM
TP
EEPROM
SUBSYSTEM
EEPROM
INTERFACE
RFID
MAIN
CONTROLLER
RFID DIGITAL SUBSYSTEM
VDD_RFID
SRAM
CMDIN
APB
INTERFACE
DATAOUT
SR Register
APB FOLLOWER SUBSYSTEM
irq
aaa-015354
Figure 11. Block diagram of the RFID/NFC interface
The CMDIN, DATAOUT, status register (SR), and SRAM are mapped in the user
memory space of the RFID core. The RFID READ and WRITE commands allow wireless
communication to this shared memory.
Messages can be in raw mode (user proprietary protocol) or formatted according to NFC
Forum Type 2 NDEF messaging and ISO/IEC 11073.
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8.11 16-bit timer
8.11.1 Features
One 16-bit timer with a programmable 16-bit prescaler.
• Timer operation
• Four 16-bit match registers that allow:
– Continuous operation with optional interrupt generation on match
– Stop timer on match with optional interrupt generation
– Reset timer on match with optional interrupt generation
• Up to two CT16B external outputs corresponding to the match registers with the
following capabilities:
– Set LOW on match
– Set HIGH on match
– Toggle on match
– Do nothing on match
• Up to two match registers can be configured as pulse width modulation (PWM). It
allows the use of up to two match outputs as single edge controlled PWM outputs
8.11.2 General description
The peripheral clock (PCLK), which is derived from the system clock, clocks the timer.
The timer can optionally generate interrupts or perform other actions at specified timer
values based on four match registers. The peripheral clock is provided by the system
clock.
Each timer also includes one capture input to trap the timer value when an input signal
transitions, optionally generating an interrupt.
In PWM mode, four match registers can be used to provide a single-edge controlled
PWM output on the match output pins. The use of the match registers that are not pinned
out to control the PWM cycle length is recommended.
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8.12 32-bit timer
8.12.1 Features
One 32-bit timer with a programmable 32-bit prescaler.
• Timer operation
• Four 32-bit match registers that allow:
– Continuous operation with optional interrupt generation on match
– Stop timer on match with optional interrupt generation
– Reset timer on match with optional interrupt generation
• Up to two CT32B external outputs corresponding to the match registers with the
following capabilities:
– Set LOW on match
– Set HIGH on match
– Toggle on match
– Do nothing on match
• Up to two match registers can be configured as PWM allowing the use of up to two
match outputs as single edge controlled PWM outputs
8.12.2 General description
The peripheral clock (PCLK), which is derived from the system clock, clocks the timer.
The timer can optionally generate interrupts or perform other actions at specified timer
values based on four match registers. The peripheral clock is provided by the system
clock.
Each timer also includes one capture input to trap the timer value when an input signal
transitions, optionally generating an interrupt.
In PWM mode, four match registers can be used to provide a single-edge controlled
PWM output on the match output pins. Use of the match registers that are not pinned out
to control the PWM cycle length is recommended.
8.13 Watchdog timer (WDT)
If the microcontroller enters an erroneous state, the purpose of the watchdog timer
(WDT) is to reset it within a reasonable amount of time.
When enabled, if the user program fails to feed (or reload) the WDT within a
predetermined amount of time, the WDT generates a system reset.
8.13.1 Features
• If not periodically reloaded, it internally resets the microcontroller
• Debug mode
• Enabled by software but requires a hardware reset or a WDT reset/interrupt to be
disabled
• If enabled, incorrect/incomplete feed sequence causes reset/interrupt
• Flag to indicate WDT reset
• Programmable 24-bit timer with internal prescaler
24
• Selectable time period from (TWDCLK × 256 × 4) to (TWDCLK × 2 × 4) in multiples
of TWDCLK × 4
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• The WDT clock (WDCLK) source is a 2 MHz clock derived from the SFRO, or the
external clock as set by the SYSCLKCTRL register
8.13.2 General description
The WDT consists of a divide by four fixed prescaler and a 24-bit counter. The clock
is fed to the timer via a prescaler. The timer decrements when clocked. The minimum
value by which the counter is decremented is 0xFF. Setting a value lower than 0xFF
causes 0xFF to be loaded in the counter. Hence, the minimum WDT interval is
24
(TWDCLK × 256 × 4) and the maximum is (TWDCLK × 2 × 4), in multiples of
(TWDCLK × 4).
8.14 System tick timer
8.14.1 Features
• Simple 24-bit timer
• Uses dedicated exception vector
• Clocked internally by the system clock or the system clock divided by two
8.14.2 General description
The SYSTICK timer is a part of the Cortex-M0+. The SYSTICK timer can be used to
generate a fixed periodic interrupt for use by an operating system or other system.
Since the SYSTICK timer is a part of the Cortex-M0+, it facilitates porting of software by
providing a standard timer available on Cortex-M0+-based devices. The SYSTICK timer
can be used for management software.
See the Cortex-M0+ Devices - Generic User Guide (Ref. 2) for details.
8.15 Real-time clock (RTC) timer
8.15.1 Features
The real-time clock (RTC) block contains two counters:
• A countdown timer generating a wake-up signal when it expires.
• A continuous counter that counts seconds since power-up or the last system reset
The countdown timer runs on a low-speed clock and runs in an always-on power domain.
The delay and a clock tuning prescaler can be configured via the APB bus. The RTC
countdown timer generates the deep power-down wake-up signal and the RTC interrupt
signal (wake-up interrupt 12). The deep power-down wake-up signal is always generated,
while the interrupt can be masked according to the settings in the RTCIMSC register.
8.15.2 General description
The RTC module consists of two parts:
• The RTC core module, implementing the RTC timers themselves. This module runs in
the always-on VDD_ALON domain.
• The AMBA APB slave interface. This module allows configuration of the RTC core via
an APB bus. It runs in the switched power domain.
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8.16 Temperature sensor
8.16.1 Features
The temperature sensor block measures the chip temperature and outputs a raw value or
a calibrated value in Kelvin.
8.16.2 General description
The temperature is measured using a high-precision, zoom-ADC. The analog part is able
1
to measure a highly temperature-dependent X = Vbe / ΔVbe . It determines the value of
X by first applying a coarse search (successive approximation) and then a sigma-delta
in a limited range. The conversion time depends on the resolution mode as shown in
Table 15.
Table 15. Conversion time for different resolution of TSEN
Resolution (bit)
Resolution (°C)
Conversion time (ms)
7
±0.8
4
8
±0.4
7
9
±0.2
14
10
±0.1
26
11
±0.05
50
12
±0.025
100
8.17 Serial wire debug (SWD)
The debug functions are integrated into the Arm Cortex-M0+. Serial wire debug (SWD)
functions are supported. The Arm Cortex-M0+ is configured to support up to four
breakpoints and two watchpoints.
•
•
•
•
Supports Arm SWD mode
Direct debug access to all memories, registers, and peripherals
No target resources are required for the debugging session
Four instruction breakpoints that can also be used to remap instruction addresses for
code patches.
Two data comparators that can be used to remap addresses for patches to literal
values.
• Two data watchpoints that can also be used as triggers
1 Vbe is the base-emitter voltage of a bipolar transistor. Basically, the temperature sensor measures the
voltage drop over a diode formed by the base-emitter junction of a bipolar transistor. It compares the Vbe
at different current levels (from which follows the ΔVbe).
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8.18 On-chip flash memory
The NHS3100 contains a 32 kB flash memory of which 30 kB can be used as program
and data memory.
The flash is organized in 32 sectors of 1 kB. Each sector consists of 16 rows of 16 × 32bit words.
8.18.1 Reading from flash
Reading is done via the AHB interface. The memory is mapped on the bus address
space as a contiguous address space. Memory data words are seen on the bus using a
little endian arrangement.
8.18.2 Writing to flash
Writing to flash means copying a word of data over the AHB to the page buffer of the
flash. It does not actually program the data in the memory array. Subsequent erase and
program cycles do this programming.
8.18.3 Erasing/programming flash
Erasing and programming are separate operations. Both are only possible on memory
sectors that are unprotected and unlocked. Protect/lock information is stored inside the
memory itself, so the controller is not aware of protection status. So, if a program/erase
operation is performed on a protected or locked sector, it does not flag an error.
• Protection:
At the exit from reset, all sectors are protected against accidental modification. To allow
modifications, a sector must be unprotected. It can then be protected again after that
the modification has been performed.
• Locking:
Each flash sector has a lock bit. Lock bits can be set but cannot be cleared. Locked
sectors cannot be erased and reprogramed.
8.19 On-chip SRAM
The NHS3100 contains a total of 8 kB on-chip SRAM memory configured as
256 × 2 × 4 × 32 bit.
8.20 On-chip EEPROM
The NHS3100 contains a 4 kB EEPROM. This EEPROM is organized in 64 rows of
32 × 16-bit words. Of these rows, the last four contain calibration and test data and are
locked. The boot loader uses this data or it is made accessible to the application via the
firmware application programming interface (API).
8.20.1 Reading from EEPROM
Reading is done via the AHB interface. The memory is mapped on the bus address
space, as a contiguous address space. Memory data words are seen on the bus using a
little endian arrangement.
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8.20.2 Writing to EEPROM
Erasing and programming is performed, as a single operation, on one or more words
inside a single page.
Previous write operations have transferred the data to be programmed into the memory
page buffer. The page buffer tracks which words were written to (offset within the page
only). Words not written to, retain their previous content.
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9
Limiting values
Table 16. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDD
supply voltage
VI
input voltage
Conditions
Min
Max
Unit
−0.5
+3.6
V
normal PIO pads (VDD = 0.6 V)
−0.5
+3.6
V
high-source PIO pads
−0.5
+5.5
V
LA/LB pads
−0.5
+5.5
V
IDD
supply current
per supply pin
-
100
mA
ISS
ground supply current
per supply pin
-
100
mA
Ilu
latch-up current
I/O; −0.5 VDD < VI < +1.5 VDD;
Tj < 125 °C
-
100
mA
Tstg
storage temperature
−40
+125
°C
Toper
operating temperature
−40
+85
°C
Tj
junction temperature
-
125
°C
Ptot
total power dissipation
-
1
W
VESD
electrostatic discharge voltage
human body model; all pins
−2000
+2000
V
charged device model; all pins
−500
+500
V
-
10
year
active lifetime
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10 Static characteristics
Table 17. Static characteristics
Tamb = −40 °C to +85 °C, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
1.72
3.0
3.60
V
-
-
-
μA
-
-
50
nA
-
3
-
μA
Supply pins
VDD
supply voltage
IDD
supply current
voltage and clock frequency
dependent
IL(off)
off-state leakage current
IDD(pd)
power-down mode supply current
[1]
deep power-down mode
Standard GPIO pins
VIH
HIGH-level input voltage
0.7VDD
-
-
V
VIL
LOW-level input voltage
-
-
0.3VDD
V
Vhys
hysteresis voltage
0.4
-
-
V
Rpd
pull-down resistance
-
72
-
kΩ
Rpu
pull-up resistance
IS
source current
-
73
-
kΩ
HIGH-level VDD = 1.8 V
[2]
-
2
-
mA
HIGH-level VDD = 3.6 V
[2]
-
8
-
mA
LOW-level VDD = 1.8 V
[2]
-
4
-
mA
LOW-level VDD = 3.6 V
[2]
-
16
-
mA
HIGH-level VDD = 1.8 V
[3]
4
-
6
mA
HIGH-level VDD = 3.6 V
[3]
13
-
18
mA
LOW-level VDD = 1.8 V
[3]
5.5
-
8
mA
LOW-level VDD = 3.6 V
[3]
22
-
32
mA
LOW-level VDD = 1.8 V
[4]
2
-
8.5
mA
LOW-level VDD = 3.6 V
[4]
9.5
-
38
mA
falling VDD
-
1.8
-
V
rising VDD
-
1.875 -
V
-
75
-
mV
High-drive GPIO pins
IS
source current
2
I C-bus pins
IS
source current
Brownout detect
Vtrip(bo)
Vhys
brownout trip voltage
hysteresis voltage
General
Rpu(int)
internal pull-up resistance
on pin RESETN
-
100
-
kΩ
Cext
external capacitance
on pin RESETN
-
-
1
nF
[1]
[2]
[3]
[4]
See Figure 12
PIO0_0, PIO0_1, PIO0_2, PIO0_6, PIO0_8, PIO0_9
PIO0_3, PIO0_7, PIO0_10, PIO0_11
PIO0_4, PIO0_5
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aaa-022790
1000
(6)
IDD
(µA)
800
600
(5)
400
(4)
(3)
(2)
(1)
200
0
1.5
2
2.5
3
3.5
4
VDD (V)
Plot of IDD / VDD when Arm running a while; 1 loop in normal mode; no NFC field present.
(1) System clock = 250 kHz
(2) System clock = 500 kHz
(3) System clock = 1 MHz
(4) System clock = 2 MHz
(5) System clock = 4 MHz
(6) System clock = 8 MHz
Figure 12. Active current consumption
Table 18. Temperature sensor characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICC(pd)
power-down mode supply current
TSEN disabled
-
-
1
nA
Istb
standby current
TSEN enabled
-
6
7
μA
ICC(oper)
operating supply current
TSEN converting
-
10
12
μA
Tacc
temperature accuracy
Tamb = 0 °C to +45 °C
−0.3
-
+0.3
°C
Tamb = −40 °C to +85 °C
−0.5
-
+0.5
°C
12-bit mode
-
0.025 -
°C
8-bit mode
-
0.4
-
°C
12-bit mode
-
100
-
ms
8-bit mode
-
7
-
ms
Tres
Tconv
temperature resolution
conversion period
Note:
All ICs are individually temperature-calibrated in production and ISO/IEC
17025 calibration certificates with NIST traceability are available at nxp.com/
NTAGSMARTSENSOR.
The absolute accuracy is valid for the factory calibration of the temperature sensor. The
sensor can be user-calibrated to reach higher accuracy.
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Table 19. Antenna input characteristics
Symbol
Parameter
Ci
input capacitance
fi
input frequency
[1]
Conditions
[1]
Min
Typ
Max
Unit
-
50
-
pF
-
13.56 -
MHz
Tamb = 22 °C; f = 13.56 MHz; RMS voltage between LA and LB = 1.5 V
Table 20. EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tret(data)
data retention time
Tamb = 22 °C
10
-
-
year
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11 Dynamic characteristics
11.1 I/O pins
Table 21. I/O dynamic characteristics
These characteristics apply to standard port pins and RESETN pin. Tamb = −40 °C to +85 °C.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tr
rise time
pin configured as output
3.0
-
5.0
ns
tf
fall time
pin configured as output
2.5
-
5.0
ns
2
11.2 I C-bus
2
Table 22. I C-bus dynamic characteristics
2
[1]
See UM10204 - I C-bus specification and user manual (Ref. 3) for details. Tamb = −40 °C to +85 °C ; see the timing
diagram in Figure 13.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
fSCL
SCL clock frequency
Standard mode
0
-
100
kHz
Fast mode
tf
tLOW
tHIGH
tSU;DAT
[1]
[2]
[3]
[4]
[5]
[6]
[7]
[8]
-
400
kHz
-
-
300
ns
20 + 0.1 × Cb
-
300
ns
fall time of both SDA and SCL
signals
Standard mode
Fast mode
[2] [3] [4]
LOW period of the SCL clock
Standard mode
4.7
-
-
µs
Fast mode
1.3
-
-
µs
Standard mode
4.0
-
-
µs
HIGH period of the SCL clock
Fast mode
tHD;DAT
0
[2] [3] [4]
data hold time
data setup time
0.6
-
-
µs
Standard mode
[2] [5] [6]
0
-
-
µs
Fast mode
[2] [5] [6]
0
-
-
µs
Standard-mode
[7] [8]
250
-
-
ns
Fast-mode
[7] [8]
100
-
-
ns
Parameters are valid over operating temperature range unless otherwise specified.
A device must internally provide a hold time of at least 300 ns for the SDA signal (regarding the VIH(min) of the SCL signal). The hold time is to bridge the
undefined region of the falling edge of SCL.
Cb = total capacitance of one bus line in pF.
The maximum tf for the SDA and SCL bus lines is specified at 300 ns. The maximum fall time for the SDA output stage tf is specified at 250 ns. It allows
series protection resistors to be connected between the SDA and the SCL pins and the SDA/SCL bus lines without exceeding the maximum specified tf.
tHD;DAT is the data hold time that is measured from the falling edge of SCL; applies to data in transmission and the acknowledge.
The maximum tHD;DAT could be 3.45 μs and 0.9 μs for standard mode and fast mode. However, it must be less than the maximum of tVD;DAT or tVD;ACK by a
transition time (see Ref. 3). Only meet this maximum if the device does not stretch the LOW period (tLOW) of the SCL signal. If the clock stretches the SCL,
the data must be valid by the setup time before it releases the clock.
tSU;DAT is the data setup time that is measured against the rising edge of SCL; applies to data in transmission and the acknowledge.
2
2
A fast-mode I C-bus device can be used in a standard-mode I C-bus system but it must meet the requirement tSU;DAT = 250 ns. This requirement
is automatically the case if the device does not stretch the LOW period of the SCL signal. If it does, it must output the next data bit to the SDA line
2
tr(max) + tSU;DAT = 1000 + 250 = 1250 ns before the SCL line is released. This procedure is in accordance with the standard-mode I C-bus specification.
Also, the acknowledge timing must meet this setup time.
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tf
SDA
tSU;DAT
70 %
30 %
70 %
30 %
tHD;DAT
tf
70 %
30 %
SCL
tVD;DAT
tHIGH
70 %
30 %
70 %
30 %
70 %
30 %
tLOW
1 / fSCL
S
002aaf425
2
Figure 13. I C-bus pins clock timing
11.3 SPI interfaces
Table 23. Dynamic characteristics of SPI pins in SPI mode
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
clock cycle time
full-duplex mode
[1]
50
-
-
ns
when only transmitting
[1]
40
-
-
ns
2.4 V ≤ VDD < 3.6 V
[2]
15
-
-
ns
2.0 V ≤ VDD < 2.4 V
[2]
20
-
-
ns
1.8 V ≤ VDD < 2.0 V
[2]
24
-
-
ns
data hold time
[2]
0
-
-
ns
data output valid time
[2]
-
-
10
ns
data output hold time
[2]
0
-
-
ns
Tcy(PCLK)
PCLK cycle time
[3]
0
-
-
ns
tHD;DAT
data hold time
[3]
3 × Tcy(PCLK) + 4 -
-
ns
tv(Q)
data output valid time
[3]
-
-
3 × Tcy(PCLK) + 11
ns
th(Q)
data output hold time
[3]
-
-
2 × Tcy(PCLK) + 5
ns
SPI leader
tcy(clk)
tSU;DAT
tHD;DAT
tv(Q)
th(Q)
data setup time
SPI slave
[1]
[2]
[3]
[4]
[4]
[4]
[4]
[4]
tcy(clk) = (SSPCLKDIV × (1 + SCR) × CPSDVSR) / fmain. The clock cycle time derived from the SPI bit rate tcy(clk) is a function of:
• The main clock frequency fmain
• The SPI peripheral clock divider (SSPCLKDIV)
• The SPI SCR parameter (specified in the SSP0CR0 register)
• The SPI CPSDVSR parameter (specified in the SPI clock prescale register)
Tamb = −40 °C to +105 °C
tcy(clk) = 12 × Tcy(PCLK)
Tamb = 25 °C for normal voltage supply: VDD = 3.3 V
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tcy(clk)
SCK (CPOL = 0)
SCK (CPOL = 1)
tv(Q)
th(Q)
DATA VALID
MOSI
DATA VALID
tSU;DAT
DATA VALID
MISO
DATA VALID
tv(Q)
MOSI
th(Q)
DATA VALID
DATA VALID
tSU;DAT
MISO
CPHA = 1
tHD;DAT
DATA VALID
tHD;DAT
CPHA = 0
DATA VALID
aaa-024226
Figure 14. SPI master timing in SPI mode
tcy(clk)
SCK (CPOL = 0)
SCK (CPOL = 1)
tSU;DAT
MOSI
DATA VALID
tHD;DAT
DATA VALID
tv(Q)
MISO
th(Q)
DATA VALID
tSU;DAT
MOSI
DATA VALID
tHD;DAT
DATA VALID
tv(Q)
MISO
DATA VALID
CPHA = 1
DATA VALID
th(Q)
CPHA = 0
DATA VALID
aaa-024227
Figure 15. SPI slave timing in SPI mode
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12 Package outline
HVQFN24: plastic thermal enhanced very thin quad flat package; no leads;
24 terminals; body 4 x 4 x 0.85 mm
B
D
SOT616-3
A
terminal 1
index area
A
E
A1
c
detail X
e1
e
7
C
1/2 e
b
v
w
12
y1 C
C A B
C
y
L
13
6
e
e2
Eh
1/2 e
1
18
terminal 1
index area
24
19
X
Dh
0
2.5
scale
Dimensions (mm are the original dimensions)
Unit(1)
mm
max
nom
min
A(1)
1
A1
b
0.05 0.30
0.00 0.18
c
0.2
5 mm
D(1)
Dh
E(1)
Eh
4.1
2.75
4.1
2.75
3.9
2.45
3.9
2.45
e
e1
0.5
2.5
e2
2.5
L
0.5
0.3
v
0.1
w
y
0.05 0.05
y1
0.1
Note
1. Plastic or metal protrusions of 0.075 mm maximum per side are not included.
Outline
version
References
IEC
SOT616-3
JEDEC
JEITA
sot616-3_po
European
projection
Issue date
16-02-17
16-07-14
MO-220
Figure 16. Package outline
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WLCSP25: wafer level chip-scale package, 25 balls; 2.51 x 2.51 x 0.5 mm
B
D
SOT1401-1
A
ball A1
index area
A2
E
A
A1
detail X
e1
C
e
Øv
Øw
b
C A B
C
y
E
D
e
e2
C
B
A
ball A1
index area
1
2
3
4
5
X
0
3 mm
scale
Dimensions (mm are the original dimensions)
Unit
mm
A
max 0.54
nom 0.50
min 0.46
A1
A2
b
D
E
e
e1
e2
v
w
y
0.23
0.20
0.17
0.325
0.300
0.275
0.29
0.26
0.23
2.54
2.51
2.48
2.54
2.51
2.48
0.4
1.6
1.6
0.15
0.05
0.03
sot1401-1_po
Outline
version
References
IEC
JEDEC
sot1401-1
JEITA
European
projection
Issue date
15-10-05
16-07-26
---
Figure 17. WLCSP25 package outline
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Bumped die with 8 functional bumps; 2.51 mm x 2.51 mm x 0.16 mm
2.51 ± 0.03
B
SOT1870-1
A
0.160
± 0.015
0.150
± 0.015
2.51 ± 0.03
detail X
0.010
± 0.002
terminal 1
index area
1.058
terminal 1
index area
0.382
2
C
3
4
0.512
1
0.682
12
11
0.18
0.291 10
5
1.058
0.763
6
9
8
0.422
7
1.012
1.058
0
2 mm
scale
Dimensions are in mm
Outline
version
SOT1870-1
X
1.058
References
IEC
JEDEC
JEITA
sot1870-1_ssv
European
projection
---
Figure 18. Bumped die package outline
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13 Abbreviations
Table 24. Abbreviations
NHS3100
Product data sheet
Acronym
Description
ADC
analog-to-digital converter
AHB
advanced high-performance bus
AMBA
advanced microcontroller bus architecture
APB
advanced peripheral bus
API
application programming interface
ARM
advanced RISC machine
BOD
brownout detection
CGU
clock generator unit
EEPROM
electrically erasable programmable read-only memory
GPIO
general-purpose input output
LDO
low drop out
MISO
master input slave output
MOSI
master output slave input
NDEF
NFC data exchange format
NFC
near field communication
NVIC
nested vectored interrupt controller
PMU
power management unit
POR
power-on reset
PWM
pulse width modulation
RFID
radio frequency identification
RISC
reduced instruction set computer
RTC
real-time clock
SFRO
system free-running oscillator
SPI
serial peripheral interface
SSI
synchronous serial interface
SSP
synchronous serial port
SR
status register
SWD
serial wire debug
TFRO
timer free-running oscillator
WDT
watchdog timer
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14 References
[1]
DDI0484C_cortex_m0p_r0p1_trm
Cortex-M0+ Devices - Technical Reference Manual
[2]
DUI0662B_cortex_m0p_r0p1_dgug
Cortex-M0+ Devices - Generic User Guide
[3]
UM10204 user manual
I C-bus specification and user manual;
2014, NXP Semiconductors
NHS3100
Product data sheet
2
All information provided in this document is subject to legal disclaimers.
Rev. 8.03 — 27 May 2021
© NXP B.V. 2021. All rights reserved.
42 / 46
NHS3100
NXP Semiconductors
NTAG SmartSensor temperature monitor
15 Revision history
Table 25. Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NHS3100 v.8
20210525
Product data sheet
-
NHS3100 v.7
Modifications:
• Table 18 in Section 10 "Sensor characteristics" updated
• Text has been updated throughout the document
NHS3100 v.7
20190411
Modifications:
• Section 7 "Pinning" updated
• Text has been updated throughout the document
NHS3100 v.6
20180615
Modifications:
• NFC certification and logo have been added
• Text has been updated throughout the document
NHS3100 v.5
20161205
Modifications
• Addition of NHS3100W8 package data
NHS3100 v.4
20160905
Modifications
• General update
• Section 10 "Static characteristics" updated
• Drawing revisions
NHS3100 v.3
20160601
Modifications
• General update
NHS3100 v.2
20160531
Modifications
•
•
•
•
•
•
•
•
NHS3100 v.1
20150811
NHS3100
Product data sheet
Product data sheet
Product data sheet
Product data sheet
-
-
NHS3100 v.6
NHS3100 v.5
-
NHS3100 v.4
-
NHS3100 v.3
Preliminary data sheet
-
NHS3100 v.2
Objective data sheet
-
NHS3100 v.1
Product data sheet
Section 7 "Pinning" updated
Section 8.4.2 "Power Management Unit (PMU)" major revision
2
Section 11.2 "I C-bus" updated
Section 11.3 "SPI interfaces" added
Section 12: WLCSP25 package added
Section 1: Cautions added
Section 10 "Static characteristics" updated
Section 8.7 "Fast General-Purpose parallel I/O" added
Objective data sheet
-
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Rev. 8.03 — 27 May 2021
-
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43 / 46
NHS3100
NXP Semiconductors
NTAG SmartSensor temperature monitor
16 Legal information
16.1 Data sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
16.2 Definitions
Draft — A draft status on a document indicates that the content is still
under internal review and subject to formal approval, which may result
in modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included in a draft version of a document and shall have no
liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
information source outside of NXP Semiconductors. In no event shall NXP
Semiconductors be liable for any indirect, incidental, punitive, special or
consequential damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
legal theory. Notwithstanding any damages that customer might incur for
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
NHS3100
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
and products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with
their applications and products. NXP Semiconductors does not accept any
liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
customer’s third party customer(s). NXP does not accept any liability in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 8.03 — 27 May 2021
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44 / 46
NHS3100
NXP Semiconductors
NTAG SmartSensor temperature monitor
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use
of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Security — Customer understands that all NXP products may be subject
to unidentified or documented vulnerabilities. Customer is responsible
for the design and operation of its applications and products throughout
their lifecycles to reduce the effect of these vulnerabilities on customer’s
applications and products. Customer’s responsibility also extends to other
NHS3100
Product data sheet
open and/or proprietary technologies supported by NXP products for use
in customer’s applications. NXP accepts no liability for any vulnerability.
Customer should regularly check security updates from NXP and follow up
appropriately. Customer shall select products with security features that best
meet rules, regulations, and standards of the intended application and make
the ultimate design decisions regarding its products and is solely responsible
for compliance with all legal, regulatory, and security related requirements
concerning its products, regardless of any information or support that may
be provided by NXP. NXP has a Product Security Incident Response Team
(PSIRT) (reachable at PSIRT@nxp.com) that manages the investigation,
reporting, and solution release to security vulnerabilities of NXP products.
16.4 Licenses
Purchase of NXP ICs with NFC technology
Purchase of an NXP Semiconductors IC that complies with one of the
Near Field Communication (NFC) standards ISO/IEC 18092 and ISO/
IEC 21481 does not convey an implied license under any patent right
infringed by implementation of any of those standards. Purchase of NXP
Semiconductors IC does not include a license to any NXP patent (or other
IP right) covering combinations of those products with other products,
whether hardware or software.
16.5 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
MIFARE — is a trademark of NXP B.V.
All information provided in this document is subject to legal disclaimers.
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45 / 46
NHS3100
NXP Semiconductors
NTAG SmartSensor temperature monitor
Contents
1
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
3
4
5
6
7
7.1
7.2
7.3
8
8.1
8.2
8.3
8.3.1
8.3.2
8.4
8.4.1
8.4.2
8.5
8.5.1
8.5.2
8.6
8.6.1
8.6.2
8.6.3
8.7
8.7.1
8.8
8.8.1
8.8.2
8.8.3
8.9
8.9.1
8.9.2
8.9.3
8.9.3.1
8.10
8.10.1
8.10.2
8.11
8.11.1
8.11.2
8.12
8.12.1
General description ............................................ 1
Features and benefits .........................................2
System ............................................................... 2
Memory .............................................................. 2
Digital peripherals .............................................. 2
Analog peripherals .............................................2
Communication interfaces ................................. 2
Clock generation ................................................2
Power control .....................................................2
General .............................................................. 3
Applications .........................................................3
Ordering information .......................................... 3
Marking .................................................................3
Block diagram ..................................................... 4
Pinning ................................................................. 5
HVQFN24 .......................................................... 5
WLCSP25 .......................................................... 7
NHS3100W8 ...................................................... 9
Functional description ......................................11
Arm Cortex-M0+ core ...................................... 11
Memory map ....................................................11
System configuration ....................................... 12
Clock generation ..............................................12
Reset ................................................................13
Power management .........................................13
System power architecture .............................. 14
Power management unit (PMU) ...................... 17
Nested vectored interrupt controller (NVIC) ..... 18
Features ...........................................................18
Interrupt sources ..............................................18
I/O configuration .............................................. 19
PIO0 pin mode ................................................ 19
PIO0 I2C-bus mode .........................................19
PIO0 current source mode .............................. 19
Fast general-purpose parallel I/O .................... 20
Features ...........................................................20
I2C-bus controller ............................................ 21
Features ...........................................................21
General description ..........................................21
I2C-bus pin description ....................................22
SPI controller ................................................... 22
Features ...........................................................22
General description ..........................................22
Pin description ................................................. 22
Pin detailed description ................................... 22
RFID/NFC communication unit ........................ 24
Features ...........................................................24
General description ..........................................24
16-bit timer .......................................................25
Features ...........................................................25
General description ..........................................25
32-bit timer .......................................................26
Features ...........................................................26
8.12.2
8.13
8.13.1
8.13.2
8.14
8.14.1
8.14.2
8.15
8.15.1
8.15.2
8.16
8.16.1
8.16.2
8.17
8.18
8.18.1
8.18.2
8.18.3
8.19
8.20
8.20.1
8.20.2
9
10
11
11.1
11.2
11.3
12
13
14
15
16
General description ..........................................26
Watchdog timer (WDT) .................................... 26
Features ...........................................................26
General description ..........................................27
System tick timer ............................................. 27
Features ...........................................................27
General description ..........................................27
Real-time clock (RTC) timer ............................ 27
Features ...........................................................27
General description ..........................................27
Temperature sensor .........................................28
Features ...........................................................28
General description ..........................................28
Serial wire debug (SWD) .................................28
On-chip flash memory ..................................... 29
Reading from flash .......................................... 29
Writing to flash .................................................29
Erasing/programming flash .............................. 29
On-chip SRAM .................................................29
On-chip EEPROM ............................................29
Reading from EEPROM .................................. 29
Writing to EEPROM .........................................30
Limiting values .................................................. 31
Static characteristics ........................................ 32
Dynamic characteristics ...................................35
I/O pins ............................................................ 35
I2C-bus ............................................................ 35
SPI interfaces .................................................. 36
Package outline .................................................38
Abbreviations .................................................... 41
References ......................................................... 42
Revision history ................................................ 43
Legal information .............................................. 44
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2021.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 May 2021
Document identifier: NHS3100