NTB0101GS1XL

NTB0101 Dual supply translating transceiver; auto direction sensing; 3-state Rev. 7 — 9 April 2018 Product data sheet 1. General description The NTB0101 is a 1-bit, dual supply translating transceiver with auto direction sensing, that enables bidirectional voltage level translation. It features two 1-bit input-output ports (A and B), one output enable input (OE) and two supply pins (VCC(A) and VCC(B)). VCC(A) can be supplied at any voltage between 1.2 V and 3.6 V and VCC(B) can be supplied at any voltage between 1.65 V and 5.5 V, making the device suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V and 5.0 V). Pins A and OE are referenced to VCC(A) and pin B is referenced to VCC(B). A LOW level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. 2. Features and benefits  Wide supply voltage range:  VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V  IOFF circuitry provides partial Power-down mode operation  Inputs accept voltages up to 5.5 V  ESD protection:  HBM JESD22-A114E Class 2 exceeds 2500 V for A port  HBM JESD22-A114E Class 3B exceeds 15000 V for B port  MM JESD22-A115-A exceeds 200 V  CDM JESD22-C101E exceeds 1500 V  Latch-up performance exceeds 100 mA per JESD 78B Class II  Multiple package options  Specified from 40 C to +85 C and 40 C to +125 C NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 3. Ordering information Table 1. Device information Type number Topside marking[1] Package Name Description Version NTB0101GW t1 SC-88 plastic surface-mounted package; 6 leads SOT363 NTB0101GM t1 XSON6 plastic extremely thin small outline package; no leads; 6 terminals; 1  1.45  0.5 mm body SOT886 NTB0101GF t1 XSON6 plastic extremely thin small outline package; no leads; 6 terminals; 1  1  0.5 mm body SOT891 NTB0101GS t1 XSON6 extremely thin small outline package; no leads; 6 terminals; 1.0  1.0  0.35 mm body SOT1202 NTB0101GS1 T1 X2SON6 plastic super thin small outline package; no leads; 6 terminals; 1.0  1.0  0.32 mm body SOT1202-2 NTB0101GN t1 XSON6 extremely thin small outline package; no leads; 6 terminals; 0.9  1.0  0.35 mm body SOT1115 [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 3.1 Ordering options Table 2. Ordering options Type number Orderable part number Package Packing method Minimum order qty Temperature NTB0101GW[3] NTB0101GW,125 SC-88 REEL 7" Q3/T4 *STANDARD MARK 3000 Tamb = 40 C to +125 C NTB0101GM NTB0101GM,115 XSON6 REEL 7" Q1/T1 *STANDARD MARK SMD 5000 Tamb = 40 C to +125 C NTB0101GF[1] NTB0101GF,132 XSON6 REEL 7" Q1/T1,Q3/T4 *STANDARD MARK SMD 5000 Tamb = 40 C to +125 C NTB0101GS[2] NTB0101GS,132 XSON6 REEL 7" Q1/T1,Q3/T4 *STANDARD MARK SMD 5000 Tamb = 40 C to +125 C NTB0101GS1 NTB0101GS1Z X2SON6 REEL 7" Q2/T3 *STANDARD MARK 10000 Tamb = 40 C to +125 C NTB0101GN[1] NTB0101GN,132 XSON6 REEL 7" Q1/T1,Q3/T4 *STANDARD MARK SMD 5000 Tamb = 40 C to +125 C [1] Discontinued with 24 Apr 2018 Last Time Buy and 24 Jul 2018 Last Time Ship date. [2] Discontinued with 31 Aug 2018 Last Time Buy and 30 Nov 2018 Last Time Ship date. [3] Not recommend for new design. NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 2 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 4. Functional diagram OE A 5 3 4 B VCC(B) VCC(A) 001aan311 Fig 1. Logic symbol 5. Pinning information 5.1 Pinning NTB0101 NTB0101 VCC(A) 1 6 GND 2 5 OE A 3 4 B VCC(A) 1 6 VCC(B) GND 2 5 OE VCC(B) A 4 VCC(A) 1 6 VCC(B) GND 2 5 OE A 3 4 B B 001aan314 001aan313 Transparent top view 001aan312 Fig 2. 3 NTB0101 Pin configuration SOT363 Fig 3. Pin configuration SOT886 and SOT1115 Transparent top view Fig 4. Pin configuration SOT891, SOT1202 and SOT1202-2 5.2 Pin description Table 3. Pin description Symbol Pin Description VCC(A) 1 supply voltage A GND 2 ground (0 V) A 3 data input or output (referenced to VCC(A)) B 4 data input or output (referenced to VCC(B)) OE 5 output enable input (active HIGH; referenced to VCC(A)) VCC(B) 6 supply voltage B NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 3 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 6. Functional description Table 4. Function table[1] Supply voltage Input Input/output OE A VCC(A) VCC(B) B 1.2 V to VCC(B) 1.65 V to 5.5 V L Z Z 1.2 V to VCC(B) 1.65 V to 5.5 V H input or output output or input GND[2] GND[2] X Z Z [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. [2] When either VCC(A) or VCC(B) is at GND level, the device goes into Power-down mode. 7. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter VCC(A) supply voltage A VCC(B) supply voltage B VI input voltage VO output voltage Conditions Active mode input clamping current VI < 0 V IOK output clamping current VO < 0 V IO output current VO = 0 V to VCCO ICC supply current ICC(A) or ICC(B) IGND ground current Tstg storage temperature Ptot total power dissipation [1] Max Unit 0.5 +6.5 V 0.5 +6.5 V [1] 0.5 +6.5 V [1][2][3] 0.5 VCCO + 0.5 V [1] 0.5 +6.5 V 50 - mA Power-down or 3-state mode IIK Min Tamb = 40 C to +125 C [2] [4] 50 - mA - 50 mA - 100 mA 100 - mA 65 +150 C - 250 mW The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed. [2] VCCO is the supply voltage associated with the output. [3] VCCO + 0.5 V should not exceed 6.5 V. [4] For SC-88 and SC-74A packages: above 87.5 C the value of Ptot derates linearly with 4.0 mW/K. For XSON6 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K. 8. Recommended operating conditions Table 6. Recommended operating conditions[1][2] Symbol Parameter VCC(A) supply voltage A 1.2 3.6 V VCC(B) supply voltage B 1.65 5.5 V VI input voltage 0 5.5 V NTB0101 Product data sheet Conditions All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 Min Max Unit © NXP Semiconductors N.V. 2018. All rights reserved. 4 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 6. Recommended operating conditions[1][2] …continued Symbol Parameter Conditions VO output voltage Power-down or 3-state mode; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V Tamb ambient temperature t/V input transition rise and fall rate Min Max Unit A port 0 3.6 V B port 0 5.5 V 40 +125 C - 40 ns/V VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V [1] The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND. [2] VCC(A) must be less than or equal to VCC(B). 9. Static characteristics Table 7. Typical static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C. Symbol Parameter Conditions Min Typ Max Unit VOH HIGH-level output voltage A port; VCC(A) = 1.2 V; IO = 20 A - 1.1 - V VOL LOW-level output voltage A port; VCC(A) = 1.2 V; IO = 20 A - 0.09 - V II input leakage current OE input; VI = 0 V to 3.6 V; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - - 1 A IOZ OFF-state output A or B port; VO = 0 V to VCCO; VCC(A) = 1.2 V to 3.6 V; current VCC(B) = 1.65 V to 5.5 V - - 1 A IOFF power-off leakage current A port; VI or VO = 0 V to 3.6 V; VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V - - 1 A B port; VI or VO = 0 V to 5.5 V; VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V - - 1 A [1] CI input capacitance OE input; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 1.0 - pF CI/O input/output capacitance A port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 4.0 - pF B port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 7.5 - pF [1] VCCO is the supply voltage associated with the output. [2] VCCI is the supply voltage associated with the input. Table 8. Typical supply current At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C. VCC(A) VCC(B) Unit 1.8 V 2.5 V 3.3 V 5.0 V ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B) 1.2 V 10 10 10 10 10 20 10 1050 nA 1.5 V 10 10 10 10 10 10 10 650 nA NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 5 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 8. Typical …continuedsupply current …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C. VCC(A) VCC(B) Unit 1.8 V 2.5 V 3.3 V 5.0 V ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B) ICC(A) ICC(B) 1.8 V 10 10 10 10 10 10 10 350 nA 2.5 V - - 10 10 10 10 10 40 nA 3.3 V - - - - 10 10 10 10 nA Table 9. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter VIH VIL VOH 40 C to +85 C Conditions Unit Min Max Min Max 0.65VCCI - 0.65VCCI - V - 0.35VCCI - 0.35VCCI V VCCO  0.4 - VCCO  0.4 - V VCCO  0.4 - VCCO  0.4 - V A port; VCC(A) = 1.4 V to 3.6 V - 0.4 - 0.4 V B port; VCC(B) = 1.65 V to 5.5 V - 0.4 - 0.4 V - 2 - 5 A - 2 - 10 A HIGH-level input voltage A or B port and OE input LOW-level input voltage A or B port and OE input HIGH-level output voltage IO = 20 A LOW-level output voltage IO = 20 A [1] VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V [1] VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V [2] A port; VCC(A) = 1.4 V to 3.6 V B port; VCC(B) = 1.65 V to 5.5 V VOL 40 C to +125 C [2] II input leakage current OE input; VI = 0 V to 3.6 V; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V IOZ OFF-state output current A or B port; VO = 0 V or VCCO; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V IOFF power-off leakage current A port; VI or VO = 0 V to 3.6 V; VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V - 2 - 10 A B port; VI or VO = 0 V to 5.5 V; VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V - 2 - 10 A NTB0101 Product data sheet [2] All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 6 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 9. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter ICC supply current 40 C to +85 C Conditions 40 C to +125 C Unit Min Max Min Max OE = LOW; VCC(A) = 1.4 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 3 - 15 A OE = HIGH; VCC(A) = 1.4 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 3 - 20 A [1] VI = 0 V or VCCI; IO = 0 A ICC(A) VCC(A) = 3.6 V; VCC(B) = 0 V - 2 - 15 A VCC(A) = 0 V; VCC(B) = 5.5 V - 2 - 15 A OE = LOW; VCC(A) = 1.4 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 5 - 15 A OE = HIGH; VCC(A) = 1.4 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V - 5 - 20 A VCC(A) = 3.6 V; VCC(B) = 0 V - 2 - 15 A VCC(A) = 0 V; VCC(B) = 5.5 V - 2 - 15 A - 8 - 40 A ICC(B) ICC(A) + ICC(B) VCC(A) = 1.4 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V [1] VCCI is the supply voltage associated with the input. [2] VCCO is the supply voltage associated with the output. 10. Dynamic characteristics Table 10. Typical dynamic characteristics for temperature 25 C[1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6. Symbol Parameter Conditions VCC(B) Unit 1.8 V 2.5 V 3.3 V 5.0 V A to B 5.9 4.8 4.4 4.2 ns B to A 5.6 4.8 4.5 4.4 ns OE to A, B 0.5 0.5 0.5 0.5 s OE to A; no external load [2] 6.9 6.9 6.9 6.9 ns OE to B; no external load [2] 9.5 8.6 8.5 8.0 ns OE to A 81 69 83 68 ns OE to B 81 69 83 68 ns VCC(A) = 1.2 V; Tamb = 25 C tpd propagation delay ten enable time tdis disable time NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 7 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 10. Typical dynamic characteristics for temperature 25 C[1] …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6. Symbol tt Parameter transition time tW pulse width fdata data rate [1] Conditions VCC(B) Unit 1.8 V 2.5 V 3.3 V 5.0 V A port 4.0 4.0 4.1 4.1 ns B port 2.6 2.0 1.7 1.4 ns data inputs 15 13 13 13 ns 70 80 80 80 Mbps tpd is the same as tPLH and tPHL. ten is the same as tPZL and tPZH. tdis is the same as tPLZ and tPHZ. tt is the same as tTHL and tTLH [2] Delay between OE going LOW and when the outputs are actually disabled. Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6. Symbol Parameter Conditions VCC(B) Unit 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V Min Max Min Max Min Max Min Max A to B 1.4 12.9 1.2 10.1 1.1 10.0 0.8 9.9 B to A 0.9 14.2 0.7 12.0 0.4 11.7 0.3 13.7 ns VCC(A) = 1.5 V  0.1 V tpd propagation delay ns ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s tdis disable time OE to A; no external load [2] 1.0 11.9 1.0 11.9 1.0 11.9 1.0 11.9 ns OE to B; no external load [2] 1.0 16.9 1.0 15.2 1.0 14.1 1.0 13.8 ns - 320 - 260 - 260 - 280 ns OE to A - 200 - 200 - 200 - 200 ns transition time OE to B A port 0.9 5.1 0.9 5.1 0.9 5.1 0.9 5.1 ns B port 0.9 4.7 0.6 3.2 0.5 2.5 0.4 2.7 ns tW pulse width data inputs 25 - 25 - 25 - 25 - ns fdata data rate - 40 - 40 - 40 - 40 Mbps A to B 1.6 11.0 1.4 7.7 1.3 6.8 1.2 6.5 ns B to A 1.5 12.0 1.3 8.4 1.0 7.6 0.9 7.1 ns tt VCC(A) = 1.8 V  0.15 V tpd propagation delay ten enable time OE to A, B - 1.0 - 1.0 - 1.0 - 1.0 s tdis disable time OE to A; no external load [2] 1.0 11.0 1.0 11.0 1.0 11.0 1.0 11.0 ns OE to B; no external load [2] 1.0 15.4 1.0 13.5 1.0 12.4 1.0 12.1 ns - 260 - 230 - 230 - 230 ns OE to A - 200 - 200 - 200 - 200 ns transition time OE to B A port 0.8 4.1 0.8 4.1 0.8 4.1 0.8 4.1 ns B port 0.9 4.7 0.6 3.2 0.5 2.5 0.4 2.7 ns tW pulse width data inputs 20 - 17 - 17 - 17 - ns fdata data rate - 49 - 60 - 60 - 60 tt NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 Mbps © NXP Semiconductors N.V. 2018. All rights reserved. 8 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1] …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6. Symbol Parameter Conditions VCC(B) Unit 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V Min Max Min Max Min Max Min Max A to B - - 1.1 6.3 1.0 5.2 0.9 4.7 ns B to A - - 1.2 6.6 1.1 5.1 0.9 4.4 ns VCC(A) = 2.5 V  0.2 V propagation delay tpd ten enable time OE to A, B - - - 1.0 - 1.0 - 1.0 s tdis disable time OE to A; no external load [2] - - 1.0 9.2 1.0 9.2 1.0 9.2 ns OE to B; no external load [2] - - 1.0 11.9 1.0 10.7 1.0 10.2 ns OE to A - - - 200 - 200 - 200 ns OE to B - - - 200 - 200 - 200 ns transition time A port - - 0.7 3.0 0.7 3.0 0.7 3.0 ns B port - - 0.7 3.2 0.5 2.5 0.4 2.7 ns tW pulse width data inputs - - 12 - 10 - 10 - ns fdata data rate - - - 85 - 100 - 100 Mbps A to B - - - - 0.9 4.7 0.8 4.0 ns B to A - - - - 1.0 4.9 0.9 3.8 ns tt VCC(A) = 3.3 V  0.3 V propagation delay tpd ten enable time OE to A, B - - - - - 1.0 - 1.0 s tdis disable time OE to A; no external load [2] - - - - 1.0 9.2 1.0 9.2 ns OE to B; no external load [2] - - - - 1.0 10.1 1.0 9.6 ns OE to A - - - - - 260 - 260 ns OE to B - - - - - 200 - 200 ns transition time A port - - - - 0.7 2.5 0.7 2.5 ns B port - - - - 0.5 2.5 0.4 2.7 ns tW pulse width data inputs - - - - 10 - 10 - ns fdata data rate - - - - - 100 - 100 tt [1] Mbps tpd is the same as tPLH and tPHL. ten is the same as tPZL and tPZH. tdis is the same as tPLZ and tPHZ. tt is the same as tTHL and tTLH. [2] Delay between OE going LOW and when the outputs are actually disabled. NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 9 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6. Symbol Parameter Conditions VCC(B) Unit 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V Min Max Min Max Min Max Min Max VCC(A) = 1.5 V  0.1 V tpd ten tdis propagation delay A to B 1.4 15.9 1.2 13.1 1.1 13.0 0.8 12.9 ns B to A 0.9 17.2 0.7 15.0 0.4 14.7 0.3 16.7 ns enable time OE to A, B disable time 1.0 s - 1.0 - 1.0 - 1.0 - OE to A; no external load [2] 1.0 12.5 1.0 12.5 1.0 12.5 1.0 12.5 ns OE to B; no external load [2] 14.6 ns 1.0 18.1 1.0 16.2 1.0 14.9 1.0 OE to A - 340 - 280 - 280 - 300 ns OE to B - 220 - 220 - 220 - 220 ns ns tt transition time A port 0.9 7.1 0.9 7.1 0.9 7.1 0.9 7.1 B port 0.9 6.5 0.6 5.2 0.5 4.8 0.4 4.7 ns tW pulse width data inputs 25 - 25 - 25 - 25 - ns fdata data rate - 40 - 40 - 40 - 40 Mbps ns VCC(A) = 1.8 V  0.15 V tpd ten tdis propagation delay A to B 1.6 14.0 1.4 10.7 1.3 9.8 1.2 9.5 B to A 1.5 15.0 1.3 11.4 1.0 10.6 0.9 10.1 ns enable time OE to A, B disable time - 1.0 - 1.0 - 1.0 - 1.0 s OE to A; no external load [2] 1.0 11.5 1.0 11.5 1.0 11.5 1.0 11.5 ns OE to B; no external load [2] 12.7 ns 1.0 16.5 1.0 14.5 1.0 13.3 1.0 OE to A - 280 - 250 - 250 - 250 ns OE to B - 220 - 220 - 220 - 220 ns ns tt transition time A port 0.8 6.2 0.8 6.1 0.8 6.1 0.8 6.1 B port 0.9 5.8 0.6 5.2 0.5 4.8 0.4 4.7 ns tW pulse width data inputs 22 - 19 - 19 - 19 - ns fdata data rate - 45 - 55 - 55 - 55 Mbps VCC(A) = 2.5 V  0.2 V tpd ten tdis propagation delay A to B - - 1.1 9.3 1.0 8.2 0.9 7.7 ns B to A - - 1.2 9.6 1.1 8.1 0.9 7.4 ns enable time OE to A, B - - - 1.0 - 1.0 - 1.0 s - - 1.0 9.6 1.0 9.6 1.0 9.6 ns 10.8 ns disable time OE to A; no external load [2] OE to B; no external load [2] - - 1.0 12.6 1.0 11.4 1.0 OE to A - - - 220 - 220 - 220 ns OE to B - - - 220 - 220 - 220 ns - - 0.7 5.0 0.7 5.0 0.7 5.0 ns tt transition time A port B port - - 0.7 4.6 0.5 4.8 0.4 4.7 ns tW pulse width data inputs; - - 14 - 13 - 10 - ns fdata data rate - - - 75 - 80 - 100 NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 Mbps © NXP Semiconductors N.V. 2018. All rights reserved. 10 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] …continued Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for wave forms see Figure 5 and Figure 6. Symbol Parameter Conditions VCC(B) Unit 1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V Min Max Min Max Min Max Min Max A to B - - - - 0.9 7.7 0.8 7.0 ns B to A - - - - 1.0 7.9 0.9 6.8 ns VCC(A) = 3.3 V  0.3 V propagation delay tpd ten enable time OE to A, B - - - - - 1.0 - 1.0 s tdis disable time OE to A; no external load [2] - - - - 1.0 9.5 1.0 9.5 ns OE to B; no external load [2] - - - - 1.0 10.7 1.0 9.6 ns OE to A - - - - - 280 - 280 ns OE to B - - - - - 220 - 220 ns transition time A port - - - - 0.7 4.5 0.7 4.5 ns B port - - - - 0.5 4.1 0.4 4.7 ns tW pulse width data inputs - - - - 10 - 10 - ns fdata data rate - - - - - 100 - 100 tt [1] Mbps tpd is the same as tPLH and tPHL. ten is the same as tPZL and tPZH. tdis is the same as tPLZ and tPHZ. tt is the same as tTHL and tTLH. [2] Delay between OE going LOW and when the outputs are actually disabled. NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 11 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Table 13. Typical power dissipation capacitance Voltages are referenced to GND (ground = 0 V).[1][2] Symbol Parameter Conditions VCC(A) 1.2 V 1.2 V 1.5 V 1.8 V Unit 2.5 V 2.5 V 3.3 V 2.5 V 5.0 V 3.3 V to 5.0 V VCC(B) 1.8 V 5.0 V 1.8 V 1.8 V Tamb = 25 C power dissipation capacitance CPD outputs enabled; OE = VCC(A) A port: (direction A to B) 5 5 5 5 5 5 5 pF A port: (direction B to A) 8 8 8 8 8 8 8 pF B port: (direction A to B) 18 18 18 18 18 18 18 pF B port: (direction B to A) 13 16 12 12 12 12 13 pF A port: (direction A to B) 0.12 0.12 0.04 0.05 0.08 0.08 0.07 pF A port: (direction B to A) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 pF B port: (direction A to B) 0.01 0.01 0.01 0.01 0.01 0.01 0.01 pF B port: (direction B to A) 0.07 0.09 0.07 0.07 0.05 0.09 0.09 pF outputs disabled; OE = GND [1] CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (CL  VCC2  fo) = sum of the outputs. [2] fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL =  . 11. Waveforms VI A, B input VM GND tPHL VOH B, A output VOL tPLH 90 % VM 10 % tTHL tTLH 001aan315 Measurement points are given in Table 14. VOL and VOH are typical output voltage levels that occur with the output load. Fig 5. Data input (A, B) to data output (B, A) propagation delay times NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 12 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state VI OE input VM GND tPLZ output LOW-to-OFF OFF-to-LOW tPZL VCCO VM VX VOL tPHZ VOH tPZH VY output HIGH-to-OFF OFF-to-HIGH VM GND outputs enabled outputs disabled outputs enabled 001aal919 Measurement points are given in Table 14. VOL and VOH are typical output voltage levels that occur with the output load. Fig 6. Enable and disable times Table 14. Measurement points[1] Supply voltage Input Output VCCO VM VM VX VY 1.2 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH  0.1 V 1.5 V  0.1 V 0.5VCCI 0.5VCCO VOL + 0.1 V VOH  0.1 V 1.8 V  0.15 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH  0.15 V 2.5 V  0.2 V 0.5VCCI 0.5VCCO VOL + 0.15 V VOH  0.15 V 3.3 V  0.3 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH  0.3 V 5.0 V  0.5 V 0.5VCCI 0.5VCCO VOL + 0.3 V VOH  0.3 V [1] VCCI is the supply voltage associated with the input and VCCO is the supply voltage associated with the output. NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 13 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state VI tW 90 % negative pulse VM 0V tf tr tr tf VI 90 % positive pulse 0V VM 10 % VM VM 10 % tW VEXT VCC VI RL VO G DUT CL RL 001aal920 Test data is given in Table 15. All input pulses are supplied by generators having the following characteristics: PRR  10 MHz; ZO = 50 ; dV/dt  1.0 V/ns. RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 7. Table 15. Test circuit for measuring switching times Test data Supply voltage Input VCC(A) VI[1] VCC(B) 1.2 V to 3.6 V 1.65 V to 5.5 V VCCI Load VEXT t/V CL RL[2]  1.0 ns/V 15 pF 50 k, 1 M open tPLH, tPHL tPZH, tPHZ tPZL, tPLZ[3] open 2VCCO [1] VCCI is the supply voltage associated with the input. [2] For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 M; for measuring enable and disable times, RL = 50 k. [3] VCCO is the supply voltage associated with the output. NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 14 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 12. Application information 12.1 Applications Voltage level-translation applications. The NTB0101 can be used to interface between devices or systems operating at different supply voltages. See Figure 8 for a typical operating circuit using the NTB0101. 1.8 V 3.3 V 0.1 μF 1.8 V VCC(A) 3.3 V VCC(B) 0.1 μF OE SYSTEM CONTROLLER DATA NTB0101 A SYSTEM B DATA GND 001aan316 Fig 8. Typical operating circuit NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 15 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 12.2 Architecture The architecture of the NTB0101 is shown in Figure 9. The device does not require an extra input signal to control the direction of data flow from A to B or from B to A. In a static state, the output drivers of the NTB0101 can maintain a defined output level, but the output architecture is designed to be weak, so that they can be overdriven by an external driver when data on the bus starts flowing in the opposite direction. The output of one-shot circuits detect rising or falling edges on the A or B ports. During a rising edge, the one-shot circuits turn on the PMOS transistors (T1, T3) for a short duration, accelerating the LOW-to-HIGH transition. Similarly, during a falling edge, the one-shot circuits turn on the NMOS transistors (T2, T4) for a short duration, accelerating the HIGH-to-LOW transition. During output transitions the typical output impedance is 70  at VCCO = 1.2 V to 1.8 V, 50  at VCCO = 1.8 V to 3.3 V and 40  at VCCO = 3.3 V to 5.0 V. VCC(B) VCC(A) ONE SHOT T1 4 kΩ ONE SHOT T2 B A T3 ONE SHOT 4 kΩ T4 Fig 9. ONE SHOT 001aal921 Architecture of NTB0101 I/O cell NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 16 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 12.3 Input driver requirements For correct operation, the device driving the data I/Os of the NTB0101 must have a minimum drive capability of 2 mA See Figure 10 for a plot of typical input current versus input voltage. II VT/4 kΩ VI −(VD − VT)/4 kΩ 001aal922 VT: input threshold voltage of the NTB0101 (typically VCCI / 2). VD: supply voltage of the external driver. Fig 10. Typical input current versus input voltage graph 12.4 Power-up During operation VCC(A) must never be higher than VCC(B), however during power-up VCC(A)  VCC(B) does not damage the device, so either power supply can be ramped up first. There is no special power-up sequencing required. The NTB0101 includes circuitry that disables all output ports when either VCC(A) or VCC(B) is switched off. 12.5 Enable and disable An output enable input (OE) is used to disable the device. Setting OE = LOW causes all I/Os to assume the high-impedance OFF-state. The disable time (tdis with no external load) indicates the delay between when OE goes LOW and when outputs actually become disabled. The enable time (ten) indicates the amount of time the user must allow for one one-shot circuitry to become operational after OE is taken HIGH. To ensure the high-impedance OFF-state during power-up or power-down, pin OE should be tied to GND through a pull-down resistor, the minimum value of the resistor is determined by the current-sourcing capability of the driver. 12.6 Pull-up or pull-down resistors on I/O lines As mentioned previously the NTB0101 is designed with low static drive strength to drive capacitive loads of up to 70 pF. To avoid output contention issues, any pull-up or pull-down resistors used must be above 50 k. For this reason the NTB0101 is not recommended for use in open drain driver applications such as 1-Wire or I2C-bus. For these applications, the NTS0101 level translator is recommended. NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 17 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 13. Package outline 3ODVWLFVXUIDFHPRXQWHGSDFNDJHOHDGV 627 ' % $ ( \ ; +(   Y 0 $  4 SLQ LQGH[ $ $   H  ES F /S Z 0 % H GHWDLO;   PP VFDOH ',0(16,216PPDUHWKHRULJLQDOGLPHQVLRQV 81,7 $ $ PD[ ES F ' ( H H +( /S 4 Y Z \ PP                       287/,1( 9(56,21 5()(5(1&(6 ,(& -('(& -(,7$  6& 627 (8523($1 352-(&7,21 ,668('$7(   Fig 11. Package outline SOT363 (SC-88) NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 18 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 627 ;621SODVWLFH[WUHPHO\WKLQVPDOORXWOLQHSDFNDJHQROHDGVWHUPLQDOVERG\[[PP E    [  / / H   H  H [ $  $ ' ( WHUPLQDO LQGH[DUHD   PP VFDOH 'LPHQVLRQVPPDUHWKHRULJLQDOGLPHQVLRQV 8QLW PP PD[ QRP PLQ $  $ E ' (           H H   / /       1RWHV ,QFOXGLQJSODWLQJWKLFNQHVV &DQEHYLVLEOHLQVRPHPDQXIDFWXULQJSURFHVVHV 2XWOLQH YHUVLRQ 627 VRWBSR 5HIHUHQFHV ,(& -('(& -(,7$ (XURSHDQ SURMHFWLRQ ,VVXHGDWH   02 Fig 12. Package outline SOT886 (XSON6) NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 19 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state ;621SODVWLFH[WUHPHO\WKLQVPDOORXWOLQHSDFNDJHQROHDGVWHUPLQDOVERG\[[PP  627 E   î  / / H   H  H î $  $ ' ( WHUPLQDO LQGH[DUHD   PP VFDOH ',0(16,216PPDUHWKHRULJLQDOGLPHQVLRQV 81,7 $ PD[ $ PD[ E ' ( H H / / PP               1RWH &DQEHYLVLEOHLQVRPHPDQXIDFWXULQJSURFHVVHV 5()(5(1&(6 287/,1( 9(56,21 ,(& 627  -('(& -(,7$  (8523($1 352-(&7,21 ,668('$7(   Fig 13. Package outline SOT891 (XSON6) NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 20 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state ;621H[WUHPHO\WKLQVPDOORXWOLQHSDFNDJHQROHDGV WHUPLQDOVERG\[[PP  627 E   î / / H    H H î $ $ ' ( WHUPLQDO LQGH[DUHD   'LPHQVLRQV 8QLW PP PP VFDOH $ $ E ' ( H H / / PD[        QRP        PLQ      1RWH ,QFOXGLQJSODWLQJWKLFNQHVV 9LVLEOHGHSHQGLQJXSRQXVHGPDQXIDFWXULQJWHFKQRORJ\ VRWBSR 5HIHUHQFHV 2XWOLQH YHUVLRQ ,(& -('(& -(,7$ 627    (XURSHDQ SURMHFWLRQ ,VVXHGDWH   Fig 14. Package outline SOT1202 (XSON6) NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 21 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Fig 15. Package outline SOT1202-2 (X2SON6) NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 22 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state XSON6: extremely thin small outline package; no leads; 6 terminals; body 0.9 x 1.0 x 0.35 mm 1 SOT1115 b 3 2 (4?)(2) L L1 e 6 5 4 e1 e1 (6?)(2) A1 A D E terminal 1 index area 0 0.5 Dimensions Unit mm 1 mm scale A(1) A1 b D E e e1 max 0.35 0.04 0.20 0.95 1.05 0.15 0.90 1.00 0.55 nom 0.12 0.85 0.95 min 0.3 L L1 0.35 0.40 0.30 0.35 0.27 0.32 Note 1. Including plating thickness. 2. Visible depending upon used manufacturing technology. Outline version sot1115_po References IEC JEDEC JEITA European projection Issue date 10-04-02 10-04-07 SOT1115 Fig 16. Package outline SOT1115 (XSON6) NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 23 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 14. Abbreviations Table 16. Abbreviations Acronym Description CDM Charged Device Model DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model NMOS N-type Metal Oxide Semiconductor PMOS P-type Metal Oxide Semiconductor PRR Pulse Repetition Rate 15. Revision history Table 17. Revision history Document ID Release date Data sheet status NTB0101 v.7 20180409 Product data sheet Modifications: • • Change notice Supersedes NTB0101 v.6 Corrected Figure 15 “Package outline SOT1202-2 (X2SON6)” Table 2 “Ordering options” – Updated orderable part number, packing method and minimum order quantity for NTB0101GS1 NTB0101 v.6 Modifications: 20180301 • • Product data sheet NTB0101 v.5 Added NTB0101GN and NTB0101GS1 Section 3 “Ordering information” – Updated table notes for Table 1 “Device information” – Added Section 3.1 “Ordering options” NTB0101 v.5 Modifications: NTB0101 v.4 Modifications: NTB0101 v.3 Modifications: 20160224 • Product data sheet - NTB0101 v.3 Package outline drawing of SOT886 (Figure 12) modified. 20111110 • NTB0101 v.4 Deleted NTB0101GV 20120806 • Product data sheet Product data sheet - NTB0101 v.2 Legal pages updated. NTB0101 v.2 20110505 Product data sheet - NTB0101 v.1 NTB0101 v.1 20101230 Product data sheet - - NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 24 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. NTB0101 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 25 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NTB0101 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 7 — 9 April 2018 © NXP Semiconductors N.V. 2018. All rights reserved. 26 of 27 NTB0101 NXP Semiconductors Dual supply translating transceiver; auto direction sensing; 3-state 18. Contents 1 2 3 3.1 4 5 5.1 5.2 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 12.5 12.6 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Ordering options . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Application information. . . . . . . . . . . . . . . . . . 15 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Input driver requirements . . . . . . . . . . . . . . . . 17 Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Enable and disable . . . . . . . . . . . . . . . . . . . . . 17 Pull-up or pull-down resistors on I/O lines . . . 17 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 24 Legal information. . . . . . . . . . . . . . . . . . . . . . . 25 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 25 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Contact information. . . . . . . . . . . . . . . . . . . . . 26 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2018. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 April 2018 Document identifier: NTB0101