NTB0102-Q100
Dual supply translating transceiver; auto direction sensing;
3-state
Rev. 1 — 18 April 2013
Product data sheet
1. General description
The NTB0102-Q100 is a 2-bit, dual supply translating transceiver with auto direction
sensing, that enables bidirectional voltage level translation. It features two 2-bit
input-output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A)
and VCC(B)). VCC(A) can be supplied with any voltage between 1.2 V and 3.6 V. VCC(B) can
be supplied with any voltage between 1.65 V and 5.5 V. This flexibility makes the device
suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3
V and 5.0 V).
Pins An and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B). A LOW
level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is
fully specified for partial power-down applications using IOFF. The IOFF circuitry disables
the output, preventing the damaging backflow current through the device when it is
powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from 40 C to +85 C and from 40 C to +125 C
Wide supply voltage range:
VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V
IOFF circuitry provides partial Power-down mode operation
Inputs accept voltages up to 5.5 V
ESD protection:
MIL-STD-883, method 3015 Class 2 exceeds 2500 V for A port
MIL-STD-883, method 3015 Class 3B exceeds 15000 V for B port
HBM JESD22-A114E Class 2 exceeds 2500 V for A port
HBM JESD22-A114E Class 3B exceeds 15000 V for B port
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )
Latch-up performance exceeds 100 mA per JESD 78B Class II
Multiple package options
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range
Name
Description
Version
NTB0102DP-Q100
40 C to +125 C
TSSOP8
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
NTB0102GD-Q100
40 C to +125 C
XSON8
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3 2 0.5 mm
4. Marking
Table 2.
Marking
Type number
Marking code[1]
NTB0102DP-Q100
t02
NTB0102GD-Q100
t02
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
OE
A2
6
4
1
A1
B2
5
8
VCC(A)
B1
VCC(B)
001aal914
Fig 1.
Logic symbol
NTB0102_Q100
Product data sheet
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
6. Pinning information
6.1 Pinning
17%4
%
%
*1'
9&&%
9&&$
2(
$
$
%
%
*1'
9&&%
9&&$
2(
$
$
DDD
7UDQVSDUHQWWRSYLHZ
DDD
Fig 2.
Pin configuration SOT505-2 (TSSOP8)
Fig 3.
Pin configuration SOT996-2 (XSON8)
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
B2, B1
1, 8
data input or output (referenced to VCC(B))
GND
2
ground (0 V)
VCC(A)
3
supply voltage A
A2, A1
4, 5
data input or output (referenced to VCC(A))
OE
6
output enable input (active HIGH; referenced to VCC(A))
VCC(B)
7
supply voltage B
n.c.
-
not connected
7. Functional description
Table 4.
Function table[1]
Supply voltage
Input
Input/output
VCC(A)
VCC(B)
OE
An
Bn
1.2 V to VCC(B)
1.65 V to 5.5 V
L
Z
Z
1.2 V to VCC(B)
1.65 V to 5.5 V
H
input or output
output or input
GND[2]
GND[2]
X
Z
Z
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2]
When either VCC(A) or VCC(B) is at GND level, the device goes into Power-down mode.
NTB0102_Q100
Product data sheet
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Rev. 1 — 18 April 2013
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC(A)
supply voltage A
VCC(B)
supply voltage B
VI
input voltage
VO
output voltage
Conditions
Active mode
Min
Max
Unit
0.5
+6.5
V
0.5
+6.5
V
[1]
0.5
+6.5
V
[1][2][3]
0.5
VCCO + 0.5
V
[1]
0.5
+6.5
V
Power-down or 3-state mode
IIK
input clamping current
VI < 0 V
50
-
mA
IOK
output clamping current
VO < 0 V
50
-
mA
-
50
mA
-
100
mA
[2]
IO
output current
VO = 0 V to VCCO
ICC
supply current
ICC(A) or ICC(B)
IGND
ground current
100
-
mA
Tstg
storage temperature
65
+150
C
-
250
mW
total power dissipation
Ptot
[1]
Tamb = 40 C to +125 C
The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
VCCO is the supply voltage associated with the output.
[3]
VCCO + 0.5 V should not exceed 6.5 V.
[4]
[4]
For TSSOP8 package: above 55 C the value of Ptot derates linearly with 2.5 mW/K.
For XSON8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
NTB0102_Q100
Product data sheet
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
9. Recommended operating conditions
Table 6.
Recommended operating conditions[1][2]
Symbol
Parameter
VCC(A)
Conditions
Min
Max
Unit
supply voltage A
1.2
3.6
V
VCC(B)
supply voltage B
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
A port
0
3.6
V
B port
0
5.5
V
40
+125
C
-
40
ns/V
Power-down or 3-state mode;
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
Tamb
ambient temperature
t/V
input transition rise and fall rate
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND.
[2]
VCC(A) must be less than or equal to VCC(B).
10. Static characteristics
Table 7.
Typical static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VOH
HIGH-level
output voltage
A port; VCC(A) = 1.2 V; IO = 20 A
-
1.1
-
V
VOL
LOW-level
output voltage
A port; VCC(A) = 1.2 V; IO = 20 A
-
0.09
-
V
II
input leakage
current
OE input; VI = 0 V to 3.6 V; VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
-
1
A
IOZ
OFF-state output A or B port; VO = 0 V to VCCO; VCC(A) = 1.2 V to 3.6 V;
current
VCC(B) = 1.65 V to 5.5 V
-
-
1
A
IOFF
power-off
leakage current
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V
-
-
1
A
B port; VI or VO = 0 V to 5.5 V;
VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V
-
-
1
A
ICC(A); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V
-
0.05
-
A
ICC(B); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V
-
3.3
-
A
ICC(A) + ICC(B); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V
-
3.5
-
A
supply current
ICC
VI = 0 V or VCCI; IO = 0 A
[1]
[2]
CI
input
capacitance
OE input; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
-
1.0
-
pF
CI/O
input/output
capacitance
A port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
-
4.0
-
pF
B port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
-
7.5
-
pF
[1]
VCCO is the supply voltage associated with the output.
[2]
VCCI is the supply voltage associated with the input.
NTB0102_Q100
Product data sheet
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Rev. 1 — 18 April 2013
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 8.
Typical supply current
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.
VCC(A)
VCC(B)
Unit
1.8 V
2.5 V
3.3 V
5.0 V
ICC(A)
ICC(B)
ICC(A)
ICC(B)
ICC(A)
ICC(B)
ICC(A)
ICC(B)
1.2 V
10
10
10
10
10
20
10
1050
nA
1.5 V
10
10
10
10
10
10
10
650
nA
1.8 V
10
10
10
10
10
10
10
350
nA
2.5 V
-
-
10
10
10
10
10
40
nA
3.3 V
-
-
-
-
10
10
10
10
nA
Table 9.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIH
VIL
VOH
40 C to +85 C
Conditions
Min
Max
Min
Max
0.65VCCI
-
0.65VCCI
-
V
-
0.35VCCI
-
0.35VCCI
V
VCCO 0.4
-
VCCO 0.4
-
V
VCCO 0.4
-
VCCO 0.4
-
V
A port; VCC(A) = 1.4 V to 3.6 V
-
0.4
-
0.4
V
B port; VCC(B) = 1.65 V to 5.5 V
-
0.4
-
0.4
V
-
2
-
5
A
-
2
-
10
A
HIGH-level
input voltage
A or B port and OE input
LOW-level
input voltage
A or B port and OE input
HIGH-level
output voltage
IO = 20 A
LOW-level
output voltage
Unit
[1]
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[2]
A port; VCC(A) = 1.4 V to 3.6 V
B port; VCC(B) = 1.65 V to 5.5 V
VOL
40 C to +125 C
IO = 20 A
[2]
II
input leakage
current
OE input; VI = 0 V to 3.6 V;
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
IOZ
OFF-state
output current
A or B port; VO = 0 V or VCCO;
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
IOFF
power-off
leakage
current
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V
-
2
-
10
A
B port; VI or VO = 0 V to 5.5 V;
VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V
-
2
-
10
A
NTB0102_Q100
Product data sheet
[2]
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 9.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
ICC
supply current
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
OE = LOW;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
3
-
15
A
OE = HIGH;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
3
-
20
A
VCC(A) = 3.6 V; VCC(B) = 0 V
-
2
-
15
A
VCC(A) = 0 V; VCC(B) = 5.5 V
-
2
-
15
A
OE = LOW;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
5
-
15
A
OE = HIGH;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
5
-
20
A
VCC(A) = 3.6 V; VCC(B) = 0 V
-
2
-
15
A
VCC(A) = 0 V; VCC(B) = 5.5 V
-
2
-
15
A
-
8
-
40
A
VI = 0 V or VCCI; IO = 0 A
[1]
ICC(A)
ICC(B)
ICC(A) + ICC(B)
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
VCCI is the supply voltage associated with the input.
[2]
VCCO is the supply voltage associated with the output.
11. Dynamic characteristics
Table 10. Typical dynamic characteristics for temperature 25 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for waveforms see Figure 4 and Figure 5.
Symbol
Parameter
Conditions
VCC(B)
Unit
1.8 V
2.5 V
3.3 V
5.0 V
A to B
5.9
4.8
4.4
4.2
ns
B to A
5.6
4.8
4.5
4.4
ns
VCC(A) = 1.2 V; Tamb = 25 C
tpd
propagation delay
ten
enable time
OE to A, B
0.5
0.5
0.5
0.5
s
tdis
disable time
OE to A; no external load
[2]
6.9
6.9
6.9
6.9
ns
OE to B; no external load
[2]
9.5
8.6
8.5
8.0
ns
81
69
83
68
ns
OE to A
tt
transition time
NTB0102_Q100
Product data sheet
OE to B
81
69
83
68
ns
A port
4.0
4.0
4.1
4.1
ns
B port
2.6
2.0
1.7
1.4
ns
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 10. Typical dynamic characteristics for temperature 25 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for waveforms see Figure 4 and Figure 5.
Symbol
Parameter
Conditions
tsk(o)
output skew time
between channels
tW
pulse width
data inputs
fdata
data rate
[1]
VCC(B)
Unit
1.8 V
2.5 V
3.3 V
5.0 V
0.2
0.2
0.2
0.2
[3]
ns
15
13
13
13
ns
70
80
80
80
Mbps
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
tt is the same as tTHL and tTLH
[2]
Delay between OE going LOW and when the outputs are actually disabled.
[3]
Skew between any two outputs of the same package switching in the same direction.
Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
Min
Max
Min
Max
Min
Max
Min
Max
A to B
1.4
12.9
1.2
10.1
1.1
10.0
0.8
9.9
B to A
0.9
14.2
0.7
12.0
0.4
11.7
0.3
13.7 ns
VCC(A) = 1.5 V 0.1 V
tpd
propagation
delay
ns
ten
enable time
OE to A, B
-
1.0
-
1.0
-
1.0
-
1.0
s
tdis
disable time
OE to A; no external load
[2]
1.0
11.9
1.0
11.9
1.0
11.9
1.0
11.9
ns
OE to B; no external load
[2]
1.0
16.9
1.0
15.2
1.0
14.1
1.0
13.8 ns
-
320
-
260
-
260
-
280
ns
OE to A
OE to B
tt
transition
time
A port
B port
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
-
200
-
200
-
200
-
200
ns
0.9
5.1
0.9
5.1
0.9
5.1
0.9
5.1
ns
0.9
4.7
0.6
3.2
0.5
2.5
0.4
2.7
ns
-
0.5
-
0.5
-
0.5
-
0.5
ns
25
-
25
-
25
-
25
-
ns
-
40
-
40
-
40
-
40
Mbps
VCC(A) = 1.8 V 0.15 V
tpd
ten
tdis
tt
propagation
delay
A to B
1.6
11.0
1.4
7.7
1.3
6.8
1.2
6.5
ns
B to A
1.5
12.0
1.3
8.4
1.0
7.6
0.9
7.1
ns
enable time
OE to A, B
disable time
transition
time
NTB0102_Q100
Product data sheet
-
1.0
-
1.0
-
1.0
-
1.0
s
OE to A; no external load
[2]
1.0
11.0
1.0
11.0
1.0
11.0
1.0
11.0
ns
OE to B; no external load
[2]
12.1 ns
1.0
15.4
1.0
13.5
1.0
12.4
1.0
OE to A
-
260
-
230
-
230
-
230
ns
OE to B
-
200
-
200
-
200
-
200
ns
A port
0.8
4.1
0.8
4.1
0.8
4.1
0.8
4.1
ns
B port
0.9
4.7
0.6
3.2
0.5
2.5
0.4
2.7
ns
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Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
8 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
Min
Max
Min
Max
Min
Max
Min
Max
-
0.5
-
0.5
-
0.5
-
0.5
ns
20
-
17
-
17
-
17
-
ns
-
49
-
60
-
60
-
60
Mbps
VCC(A) = 2.5 V 0.2 V
tpd
ten
propagation
delay
A to B
-
-
1.1
6.3
1.0
5.2
0.9
4.7
ns
B to A
-
-
1.2
6.6
1.1
5.1
0.9
4.4
ns
enable time
OE to A, B
1.0
-
1.0
-
1.0
s
ns
disable time
tdis
transition
time
tt
-
-
-
OE to A; no external load
[2]
-
-
1.0
9.2
1.0
9.2
1.0
9.2
OE to B; no external load
[2]
-
-
1.0
11.9
1.0
10.7
1.0
10.2 ns
OE to A
-
-
-
200
-
200
-
200
ns
OE to B
-
-
-
200
-
200
-
200
ns
A port
-
-
0.7
3.0
0.7
3.0
0.7
3.0
ns
B port
-
-
0.7
3.2
0.5
2.5
0.4
2.7
ns
-
-
-
0.5
-
0.5
-
0.5
ns
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
-
-
12
-
10
-
10
-
-
-
-
85
-
100
-
100
Mbps
ns
ns
VCC(A) = 3.3 V 0.3 V
tpd
propagation
delay
A to B
-
-
-
-
0.9
4.7
0.8
4.0
B to A
-
-
-
-
1.0
4.9
0.9
3.8
ns
ten
enable time
OE to A, B
-
-
-
-
-
1.0
-
1.0
s
tdis
disable time
OE to A; no external load
[2]
-
-
-
-
1.0
9.2
1.0
9.2
ns
OE to B; no external load
[2]
-
-
-
-
1.0
10.1
1.0
9.6
ns
OE to A
-
-
-
-
-
260
-
260
ns
OE to B
-
-
-
-
-
200
-
200
ns
A port
-
-
-
-
0.7
2.5
0.7
2.5
ns
-
-
-
-
0.5
2.5
0.4
2.7
ns
-
-
-
-
-
0.5
-
0.5
ns
-
-
-
-
10
-
10
-
ns
-
-
-
-
-
100
-
100
transition
time
tt
B port
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[1]
[3]
Mbps
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
tt is the same as tTHL and tTLH.
[2]
Delay between OE going LOW and when the outputs are actually disabled.
[3]
Skew between any two outputs of the same package switching in the same direction.
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
9 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
Min
Max
Min
Max
Min
Max
Min
Max
VCC(A) = 1.5 V 0.1 V
tpd
propagation
delay
A to B
1.4
15.9
1.2
13.1
1.1
13.0
0.8
12.9 ns
B to A
0.9
17.2
0.7
15.0
0.4
14.7
0.3
16.7 ns
ten
enable time
OE to A, B
-
1.0
-
1.0
-
1.0
-
OE to A; no external load
[2]
1.0
12.5
1.0
12.5
1.0
12.5
1.0
12.5 ns
OE to B; no external load
[2]
1.0
18.1
1.0
16.2
1.0
14.9
1.0
14.6 ns
OE to A
-
340
-
280
-
280
-
300
ns
OE to B
-
220
-
220
-
220
-
220
ns
0.9
7.1
0.9
7.1
0.9
7.1
0.9
7.1
ns
0.9
6.5
0.6
5.2
0.5
4.8
0.4
4.7
ns
-
0.5
-
0.5
-
0.5
-
0.5
ns
25
-
25
-
25
-
25
-
ns
-
40
-
40
-
40
-
40
Mbps
ns
tdis
tt
disable time
transition
time
A port
B port
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
1.0
s
VCC(A) = 1.8 V 0.15 V
tpd
ten
tdis
tt
propagation
delay
A to B
1.6
14.0
1.4
10.7
1.3
9.8
1.2
9.5
B to A
1.5
15.0
1.3
11.4
1.0
10.6
0.9
10.1 ns
enable time
OE to A, B
-
1.0
-
1.0
-
1.0
-
disable time
transition
time
1.0
s
1.0
11.5
ns
1.0
12.7 ns
OE to A; no external load
[2]
1.0
11.5
1.0
11.5
1.0
11.5
OE to B; no external load
[2]
1.0
16.5
1.0
14.5
1.0
13.3
OE to A
-
280
-
250
-
250
-
250
ns
OE to B
-
220
-
220
-
220
-
220
ns
A port
0.8
6.2
0.8
6.1
0.8
6.1
0.8
6.1
ns
B port
0.9
5.8
0.6
5.2
0.5
4.8
0.4
4.7
ns
-
0.5
-
0.5
-
0.5
-
0.5
ns
22
-
19
-
19
-
19
-
ns
-
45
-
55
-
55
-
55
Mbps
ns
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
VCC(A) = 2.5 V 0.2 V
tpd
propagation
delay
A to B
-
-
1.1
9.3
1.0
8.2
0.9
7.7
B to A
-
-
1.2
9.6
1.1
8.1
0.9
7.4
ns
ten
enable time
OE to A, B
-
-
-
1.0
-
1.0
-
1.0
s
tdis
disable time
OE to A; no external load
[2]
-
-
1.0
9.6
1.0
9.6
1.0
9.6
ns
OE to B; no external load
[2]
-
-
1.0
12.6
1.0
11.4
1.0
10.8 ns
OE to A
-
-
-
220
-
220
-
220
ns
OE to B
-
-
-
220
-
220
-
220
ns
A port
-
-
0.7
5.0
0.7
5.0
0.7
5.0
ns
B port
-
-
0.7
4.6
0.5
4.8
0.4
4.7
ns
tt
transition
time
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
10 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V 0.15 V 2.5 V 0.2 V 3.3 V 0.3 V 5.0 V 0.5 V
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs;
fdata
data rate
[3]
Min
Max
Min
Max
Min
Max
Min
Max
-
-
-
0.5
-
0.5
-
0.5
ns
-
-
14
-
13
-
10
-
ns
-
-
-
75
-
80
-
100
Mbps
VCC(A) = 3.3 V 0.3 V
tpd
ten
propagation
delay
A to B
-
-
-
-
0.9
7.7
0.8
7.0
ns
B to A
-
-
-
-
1.0
7.9
0.9
6.8
ns
enable time
OE to A, B
1.0
-
1.0
s
disable time
tdis
transition
time
tt
-
-
-
-
-
OE to A; no external load
[2]
-
-
-
-
1.0
9.5
1.0
9.5
ns
OE to B; no external load
[2]
-
-
-
-
1.0
10.7
1.0
9.6
ns
OE to A
-
-
-
-
-
280
-
280
ns
OE to B
-
-
-
-
-
220
-
220
ns
A port
-
-
-
-
0.7
4.5
0.7
4.5
ns
B port
-
-
-
-
0.5
4.1
0.4
4.7
ns
-
-
-
-
-
0.5
-
0.5
ns
-
-
-
-
10
-
10
-
ns
-
-
-
-
-
100
-
100
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[1]
[3]
Mbps
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
tt is the same as tTHL and tTLH.
[2]
Delay between OE going LOW and when the outputs are actually disabled.
[3]
Skew between any two outputs of the same package switching in the same direction.
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
11 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 13. Typical power dissipation capacitance
Voltages are referenced to GND (ground = 0 V).[1][2]
Symbol Parameter
Conditions
VCC(A)
1.2 V
1.2 V
1.5 V
1.8 V
Unit
2.5 V
2.5 V
3.3 V
VCC(B)
1.8 V
5.0 V
1.8 V
1.8 V
2.5 V
5.0 V
3.3 V
to
5.0 V
5
5
5
5
5
5
5
pF
Tamb = 25 C
power
dissipation
capacitance
CPD
outputs enabled; OE = VCC(A)
A port: (direction A to B)
A port: (direction B to A)
8
8
8
8
8
8
8
pF
B port: (direction A to B)
18
18
18
18
18
18
18
pF
B port: (direction B to A)
13
16
12
12
12
12
13
pF
A port: (direction A to B)
0.12
0.12
0.04
0.05
0.08
0.08
0.07
pF
A port: (direction B to A)
0.01
0.01
0.01
0.01
0.01
0.01
0.01
pF
B port: (direction A to B)
0.01
0.01
0.01
0.01
0.01
0.01
0.01
pF
B port: (direction B to A)
0.07
0.09
0.07
0.07
0.05
0.09
0.09
pF
outputs disabled; OE = GND
[1]
CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD VCC2 fi N + (CL VCC2 fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL VCC2 fo) = sum of the outputs.
[2]
fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = .
12. Waveforms
VI
An, Bn
input
VM
GND
tPHL
VOH
Bn, An
output
tPLH
90 %
VM
VOL
10 %
tTHL
tTLH
001aal918
Measurement points are given in Table 14.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 4.
Data input (An, Bn) to data output (Bn, An) propagation delay times
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
12 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
VI
OE input
VM
GND
tPLZ
output
LOW-to-OFF
OFF-to-LOW
tPZL
VCCO
VM
VX
VOL
tPHZ
VOH
tPZH
VY
output
HIGH-to-OFF
OFF-to-HIGH
VM
GND
outputs
enabled
outputs
disabled
outputs
enabled
001aal919
Measurement points are given in Table 14.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 5.
Enable and disable times
Table 14.
Measurement points[1]
Supply voltage
Input
Output
VCCO
VM
VM
VX
VY
1.2 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH 0.1 V
1.5 V 0.1 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH 0.1 V
1.8 V 0.15 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH 0.15 V
2.5 V 0.2 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH 0.15 V
3.3 V 0.3 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH 0.3 V
5.0 V 0.5 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH 0.3 V
[1]
VCCI is the supply voltage associated with the input and VCCO is the supply voltage associated with the output.
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
13 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
VI
tW
90 %
negative
pulse
VM
0V
tf
tr
tr
tf
VI
90 %
positive
pulse
0V
VM
10 %
VM
VM
10 %
tW
VEXT
VCC
VI
RL
VO
G
DUT
CL
RL
001aal920
Test data is given in Table 15.
All input pulses are supplied by generators having the following characteristics: PRR 10 MHz; ZO = 50 ; dV/dt 1.0 V/ns.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 6.
Table 15.
Test circuit for measuring switching times
Test data
Supply voltage
Input
VCC(A)
VI[1]
VCC(B)
1.2 V to 3.6 V 1.65 V to 5.5 V VCCI
Load
VEXT
t/V
CL
RL[2]
1.0 ns/V
15 pF
50 k, 1 M open
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ[3]
open
2VCCO
[1]
VCCI is the supply voltage associated with the input.
[2]
For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 M; for measuring enable and
disable times, RL = 50 k.
[3]
VCCO is the supply voltage associated with the output.
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
14 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
13. Application information
13.1 Applications
Voltage level-translation applications. The NTB0102-Q100 can be used to interface
between devices or systems operating at different supply voltages. See Figure 7 for a
typical operating circuit using the NTB0102-Q100.
9
9
)
9
6
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