NTS0308E
8-bit dual supply translating transceiver; open drain; auto
direction sensing
Rev. 1.1 — 13 April 2021
1
Product data sheet
General description
The NTS0308E is an 8-bit, dual supply translating transceiver family with auto direction
sensing, that enables bidirectional voltage level translation. It features eight 1-bit inputoutput ports (A and B), one output enable input (OE) and two supply pins (VCC(A) and
VCC(B)). VCC(A) can be supplied at any voltage between 0.95 V and 3.6 V. VCC(B) can
be supplied at any voltage between 1.65 V and 5.5 V. This flexibility makes the device
suitable for translating between any of the voltage nodes (0.95 V, 1.2 V, 1.8 V, 2.5 V, 3.3
V and 5.0 V). VCC(A) must be ≤ VCC(B) to ensure proper operation.
Pins A and OE are referenced to VCC(A) and pin B is referenced to VCC(B). A LOW level at
pin OE causes the outputs to assume a high-impedance OFF-state.
2
Features and benefits
• Wide supply voltage range:
– VCC(A): 0.95 V to 3.6 V and VCC(B): 1.65 V to 5.5 V; VCC(A) must be ≤ VCC(B)
• No power-sequencing required
• Maximum data rate
– Open-drain: 2 Mbps
– Push-pull: 20 Mbps
• Longer one-shot pulse for driving larger capacitive loads with much reduced ringing
and overshoot
• A-side and OE inputs accept voltages up to 3.6 V and are 3.6 V tolerant
• B-side inputs accept voltages up to 5.5 V and are 5.5 V tolerant
• ESD protection:
– IEC 61000-4-2 Class 4, 8 kV contact for B-side port
– HBM JESD22-A114E Class 2 exceeds 2000 V for both ports
– CDM JESD22-C101E exceeds 1000 V for both ports
• Latch-up performance exceeds 100 mA per JESD 78B Class II
• Package options: TSSOP20
• Specified from -40 °C to +125 °C
3
Applications
2
• I C/SMBus, UART
• GPIO
NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
4
Ordering information
Table 1. Ordering information
Type number
NTS0308EPW
Topside
marking
Package
Name
Description
Line A: NTS0308 TSSOP20
Line B: EPW
Version
plastic thin shrink small outline package; 20 leads; body SOT360-1
width 4.4 mm
4.1 Ordering options
Table 2. Ordering options
Type number
Orderable part
number
Package
Packing method
Minimum order Temperature
quantity
NTS0308EPW
NTS0308EPWJ
TSSOP20
reel 13" q1/t1
*standard mark smd
2500
5
Tamb = -40 °C to +125 °C
Functional diagram
GATE
CONTROL
OE
A1
B1
An
Bn
VCC(A)
VCC(B)
aaa-031817
Figure 1. Logic symbol
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
6
Pinning information
6.1 Pinning
A1
1
20 B1
VCC(A)
2
19 VCC(B)
A2
3
18 B2
A3
4
17 B3
A4
5
A5
6
A6
7
14 B6
A7
8
13 B7
A8
9
12 B8
NTS0308EPW
OE 10
16 B4
15 B5
11 GND
aaa-035334
Figure 2. NTS0308EPW pin configuration - TSSOP20
6.2 Pin description
Table 3. NTS0308E Pin description
Symbol
Pin
Description
VCC(A)
2
supply voltage A
A1, A2, A3, A4, A5,
A6, A7, A8
1, 3, 4, 5, 6, 7, 8, 9
data input or output (referenced to VCC(A))
GND
11
ground (0 V)
OE
10
output enable input (active HIGH; referenced to VCC(A))
B8, B7, B6, B5, B4,
B3, B2, B1
12, 13, 14, 15, 16, 17, 18, 20 data input or output (referenced to VCC(B))
VCC(B)
19
7
supply voltage B
Functional description
Table 4. Function table
[1]
Supply voltage
Input
Input/output
VCC(A)
VCC(B)
OE
A
B
0.95 V to VCC(B)
1.65 V to 5.5 V
L
Z
Z
0.95 V to VCC(B)
1.65 V to 5.5 V
H
input or output
output or input
X
Z
Z
GND
[1]
[2]
[2]
GND
[2]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
When either VCC(A) or VCC(B) is at GND level, the device goes into power-down mode.
NTS0308E
Product data sheet
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
8
Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC(A)
supply voltage A
VCC(B)
supply voltage B
VI
input voltage
VO
output voltage
Conditions
Min
Max
Unit
-0.5
+4.6
V
-0.5
+6.5
V
A port and OE input
[1][2]
-0.5
+6.5
V
B port
[1][2]
-0.5
+6.5
V
Active mode
[1][2]
-0.5
VCCO + 0.5
V
A port
-0.5
+4.6
V
B port
-0.5
+6.5
V
-50
-
mA
-50
-
mA
-
±50
mA
-
100
mA
A or B port
Power-down or 3-state mode
IIK
input clamping current
VI < 0 V
IOK
output clamping current
VO < 0 V
[1]
[2]
IO
output current
VO = 0 V to VCCO
ICC
supply current
ICC(A) or ICC(B)
IGND
ground current
-100
-
mA
Tstg
storage temperature
-65
+150
°C
[1]
[2]
The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
VCCO is the supply voltage associated with the output.
9
Recommended operating conditions
Table 6. Recommended operating conditions
Symbol
Parameter
[1][2]
Conditions
[2]
Min
Max
Unit
0.95
3.6
V
VCC(A)
supply voltage A
VCC(B)
supply voltage B
1.65
5.5
V
VI_EN
EN input voltage
-0.3
VCC(A)+0.3
V
Tamb
ambient temperature
TJ
junction temperature
Δt/ΔV
input transition rise and fall rate
-40
+125
°C
[3]
-40
+125
°C
[2]
-
10
ns/V
-
10
ns/V
A or B port; push-pull driving
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
OE input
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
[2]
[3]
The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND.
VCC(A) must be less than or equal to VCC(B).
The TJ limits shall be supported by proper thermal PCB design taking the power consumption and the thermal resistance as listed in Table 7 into account.
NTS0308E
Product data sheet
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
10 Thermal characteristics
Table 7. Thermal resistance information
Symbol
Rating
NTS0308EPW
(TSSOP20)
RθJA
Junction to ambient
77.7 °C/W
ψJT
Junction to top characterization
0.3 °C/W
11 Static characteristics
Table 8. Typical static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
II
input leakage
current
OE input; VI = 0 V to 3.6 V; VCC(A) = 0.95 V to 3.6 V; VCC(B)
= 1.65 V to 5.5 V
-
-
±1
μA
IOZ
OFF-state output A or B port; VO = 0 V or VCCO; VCC(A) = 0.95 V to 3.6 V;
current
VCC(B) = 1.65 V to 5.5 V
-
-
±1
μA
CI
input
capacitance
OE input; VCC(A) = 3.3 V; VCC(B) = 3.3 V
-
1
-
pF
CI/O
input/output
capacitance
A port
-
4
-
pF
B port
-
7.5
-
pF
A or B port; VCC(A) = 3.3 V; VCC(B) = 3.3 V
-
11
-
pF
[1]
[1]
VCCO is the supply voltage associated with the output.
Table 9. Typical supply current
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 °C.
VCC(A)
VCC(B)
1.65 V
Unit
2.5 V
3.3 V
5.0 V
ICC(A)
ICC(B)
ICC(A)
ICC(B)
ICC(A)
ICC(B)
ICC(A)
ICC(B)
0.95 V
0.1
0.1
0.1
0.5
0.1
0.5
0.1
3
μA
1.2 V
0.1
0.1
0.1
0.5
0.1
0.5
0.1
3
μA
1.8 V
-
-
0.1
0.5
0.1
0.5
0.1
3
μA
2.5 V
-
-
0.2
0.5
0.1
0.5
0.1
3
μA
3.3 V
-
-
-
0.1
0.1
0.1
2
μA
NTS0308E
Product data sheet
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
Table 10. Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIH
HIGH-level
input voltage
Conditions
-40 °C to +85 °C
-40 °C to +125 °C
Min
Max
Min
Max
Unit
A port
VCC(A) = 0.95 V to 1.65 V;
VCC(B) = 1.65 V to 5.5 V
[1]
VCCI - 0.2
-
VCCI - 0.2
-
V
VCC(A) = 1.65 V to 3.6 V;
VCC(B) = 2.3 V to 5.5 V
[1]
VCCI - 0.4
-
VCCI - 0.4
-
V
[1]
VCCI - 0.4
-
VCCI - 0.4
-
V
0.65VCC(A)
-
0.65VCC(A)
-
V
VCC(A) = 0.95 V to 1.65 V;
VCC(B) = 1.65 V to 5.5 V
-
0.13
-
0.13
V
VCC(A) = 1.65 V to 3.6 V;
VCC(B) = 2.3 V to 5.5 V
-
0.15
-
0.15
V
-
0.35VCC(A)
-
B port
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
OE input
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
VIL
LOW-level
input voltage
A or B port
OE input
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
VOHA
HIGH-level
output voltage
0.35VCC(A) V
IO = -20 μA
VCC(B) = 1.65 V to 5.5 V;
VCCI = VCC(B) - 0.4 V
[2]
VCC(A) = 1.65 V to 3.6 V
[2]
0.8VCC(A)
-
0.75VCC(A)
-
V
VCC(A) = 0.95 V to 1.65 V
[2]
0.65VCC(A)
-
0.62VCC(A)
-
V
[2]
0.8VCC(B)
-
0.75VCC(B)
-
V
HIGH-level
output voltage
IO = -20 μA
LOW-level
output voltage
A or B port; IO = 1 mA
VI ≤ 0.15 V; VCC(A) = 0.95 V to
3.6 V; VCC(B) = 1.65 V to 5.5 V
-
0.30
-
0.30
V
II
input leakage
current
OE input; VI = 0 V to 3.6 V; VCC(A)
= 0.95 V to 3.6 V; VCC(B) = 1.65 V
to 5.5 V
-
±2
-
±12
μA
IOZ
OFF-state
output current
A or B port; VO = 0 V or VCCO;
VCC(A) = 0.95 V to 3.6 V; VCC(B) =
1.65 V to 5.5 V
[2]
-
±2
-
±12
μA
ICC
supply current
VI = 0 V or VCCI; IO = 0 A
[1]
VOHB
VOL
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V;
VCCI = VCC(A) - 0.2 V
[2]
ICC(A)
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
Table 10. Static characteristics...continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
-40 °C to +85 °C
-40 °C to +125 °C
Unit
Min
Max
Min
Max
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
2.4
-
15
μA
VCC(A) = 3.6 V; VCC(B) = 0 V
-
2.2
-
15
μA
VCC(A) = 0 V; VCC(B) = 5.5 V
-
-1
-
-8
μA
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
18
-
51
μA
VCC(A) = 3.6 V; VCC(B) = 0 V
-
-1
-
-5
μA
VCC(A) = 0 V; VCC(B) = 5.5 V
-
18
-
46
μA
-
14.4
-
59
μA
ICC(B)
ICC(A) + ICC(B)
VCC(A) = 0.95 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
[2]
VCCI is the supply voltage associated with the input.
VCCO is the supply voltage associated with the output.
12 Dynamic characteristics
[1]
Table 11. Dynamic characteristics for temperature range -40 °C to +125 °C
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for wave forms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
1.8 V
Unit
3.3 V
5.0 V
Min
Max
Min
Max
Min
Max
VCC(A) = 0.95V
tPHL
HIGH to LOW
propagation delay
A to B
-
20
-
11.1
-
12.3
ns
tPLH
LOW to HIGH
propagation delay
A to B
-
14.8
-
12.5
-
12.2
ns
tPHL
HIGH to LOW
propagation delay
B to A
-
9.2
-
5.2
-
5.2
ns
tPLH
LOW to HIGH
propagation delay
B to A
-
8.8
-
2.9
-
1.4
ns
ten
enable time
OE to A; B
tdis
tTLH
disable time
LOW to HIGH
output transition
time
NTS0308E
Product data sheet
-
200
-
200
-
200
ns
OE to A; no external load
[2]
-
100
-
100
-
100
ns
OE to B; no external load
[2]
-
100
-
100
-
100
ns
OE to A
-
250
-
250
-
250
ns
OE to B
-
220
-
220
-
220
ns
A port
6.0
15.3
2.2
15.1
1.8
11.1
ns
B port
6.0
17.0
4.0
14.0
4.0
20.0
ns
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
[1]
Table 11. Dynamic characteristics for temperature range -40 °C to +125 °C ...continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for wave forms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
1.8 V
tTHL
tW
fdata
[1]
[2]
[3]
Unit
3.3 V
5.0 V
Min
Max
Min
Max
Min
Max
HIGH to LOW
output transition
time
A port
0.9
18.0
0.7
9.0
0.6
9.0
ns
B port
1.6
22.0
2.8
10.7
3.2
14.2
ns
pulse width
data inputs
49
-
49
-
49
-
ns
-
20
-
20
-
20
[3]
data rate
Mbps
ten is the same as tPZL and tPZH; tdis is the same as tPLZ and tPHZ.
Delay between OE going LOW and when the outputs are disabled.
Assuming a maximum one-shot accelerator pulse length of 50 ns and equal time for 1 and 0 bit information.
[1]
Table 12. Dynamic characteristics for temperature range -40 °C to +125 °C
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for wave forms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
2.5 V
Unit
3.3 V
5.0 V
Min
Max
Min
Max
Min
Max
VCC(A) = 1.8 V
tPHL
HIGH to LOW
propagation delay
A to B
-
5.8
-
5.9
-
7.3
ns
tPLH
LOW to HIGH
propagation delay
A to B
-
8.5
-
8.5
-
8.8
ns
tPHL
HIGH to LOW
propagation delay
B to A
-
5.5
-
5.7
-
5.9
ns
tPLH
LOW to HIGH
propagation delay
B to A
-
6.7
-
5.7
-
1.4
ns
ten
enable time
OE to A; B
tdis
tTLH
tTHL
tW
fdata
disable time
-
200
-
200
-
200
ns
OE to A; no external load
[2]
-
100
-
100
-
100
ns
OE to B; no external load
[2]
-
100
-
100
-
100
ns
OE to A
-
250
-
250
-
250
ns
OE to B
-
220
-
220
-
220
ns
LOW to HIGH
output transition
time
A port
3.2
11.9
1.2
11.7
1.1
9.5
ns
B port
3.3
13.5
2.7
14.5
2.7
13.5
ns
HIGH to LOW
output transition
time
A port
1.2
7.4
1.0
7.5
1.0
16.7
ns
B port
2.6
9.5
2.2
9.4
2.8
12.5
ns
pulse width
data inputs
49
-
49
-
49
-
ns
-
20
-
20
-
20
data rate
[3]
Mbps
VCC(A) = 2.5 V
NTS0308E
Product data sheet
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
[1]
Table 12. Dynamic characteristics for temperature range -40 °C to +125 °C ...continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for wave forms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
2.5 V
Unit
3.3 V
5.0 V
Min
Max
Min
Max
Min
Max
tPHL
HIGH to LOW
propagation delay
A to B
-
4.0
-
4.2
-
4.3
ns
tPLH
LOW to HIGH
propagation delay
A to B
-
4.4
-
5.2
-
5.5
ns
tPHL
HIGH to LOW
propagation delay
B to A
-
3.8
-
4.5
-
5.4
ns
tPLH
LOW to HIGH
propagation delay
B to A
-
3.2
-
2.0
-
1.5
ns
ten
enable time
OE to A; B
tdis
tTLH
tTHL
tW
fdata
disable time
-
200
-
200
-
200
ns
OE to A; no external load
[2]
-
100
-
100
-
100
ns
OE to B; no external load
[2]
-
100
-
100
-
100
ns
OE to A
-
220
-
220
-
220
ns
OE to B
-
220
-
220
-
220
ns
LOW to HIGH
output transition
time
A port
2.8
10
1.4
8.3
1.2
7.8
ns
B port
3.2
10.4
2.9
15.5
2.4
16.9
ns
HIGH to LOW
output transition
time
A port
1.0
7.2
1.0
6.9
1.0
6.7
ns
B port
2.2
9.8
2.4
8.4
2.6
8.3
ns
pulse width
data inputs
49
-
49
-
49
-
ns
-
20
-
20
-
20
Mbps
[3]
data rate
VCC(A) = 3.3 V
tPHL
HIGH to LOW
propagation delay
A to B
-
-
-
3.0
-
3.9
ns
tPLH
LOW to HIGH
propagation delay
A to B
-
-
-
5.3
-
5.5
ns
tPHL
HIGH to LOW
propagation delay
B to A
-
-
-
3.2
-
4.2
ns
tPLH
LOW to HIGH
propagation delay
B to A
-
-
-
3.2
-
3.3
ns
ten
enable time
OE to A; B
-
-
-
200
-
200
ns
tdis
disable time
OE to A; no external load
[2]
-
-
-
100
-
100
ns
OE to B; no external load
[2]
-
-
-
100
-
100
ns
OE to A
-
-
-
280
-
280
ns
OE to B
-
-
-
220
-
220
ns
A port
-
-
1.2
13.1
1.1
7.4
ns
B port
-
-
2.5
14.2
2.1
16.0
ns
tTLH
LOW to HIGH
output transition
time
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8-bit dual supply translating transceiver; open drain; auto direction sensing
[1]
Table 12. Dynamic characteristics for temperature range -40 °C to +125 °C ...continued
Voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 5; for wave forms, see Figure 3 and Figure 4.
Symbol Parameter
Conditions
VCC(B)
2.5 V
tTHL
tW
fdata
[1]
[2]
[3]
Unit
3.3 V
5.0 V
Min
Max
Min
Max
Min
Max
HIGH to LOW
output transition
time
A port
-
-
1.0
6.8
1.0
6.3
ns
B port
-
-
2.3
9.3
2.4
9.5
ns
pulse width
data inputs
-
-
49
-
49
-
ns
-
-
-
20
-
20
[3]
data rate
Mbps
ten is the same as tPZL and tPZH; tdis is the same as tPLZ and tPHZ.
Delay between OE going LOW and when the outputs are disabled.
Assuming a maximum one-shot accelerator pulse length of 50 ns and equal time for 1 and 0 bit information.
13 Waveforms
VI
A, B input
VM
GND
tPHL
VOH
B, A output
VOL
tPLH
90 %
VM
10 %
tTHL
tTLH
001aan321
Measurement points are given in Table 13.
VOL and VOH are typical output voltage levels that occur with the output load.
Figure 3. The data input (A, B) to data output (B, A) propagation delay times
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8-bit dual supply translating transceiver; open drain; auto direction sensing
VI
OE input
VM
GND
tPLZ
output
LOW-to-OFF
OFF-to-LOW
tPZL
VCCO
VM
VX
VOL
tPHZ
output
HIGH-to-OFF
OFF-to-HIGH
VOH
tPZH
VY
VM
GND
outputs
enabled
outputs
disabled
outputs
enabled
001aal919
Measurement points are given in Table 13.
VOL and VOH are typical output voltage levels that occur with the output load.
Figure 4. Enable and disable times
Table 13. Measurement points
[1][2]
Supply voltage
Input
Output
VCCO
VM
VM
VX
VY
0.95 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH - 0.1 V
1.8 V ± 0.15 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH - 0.15 V
2.5 V ± 0.2 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH - 0.15 V
3.3 V ± 0.3 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH - 0.3 V
5.0 V ± 0.5 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH - 0.3 V
[1]
[2]
VCCI is the supply voltage associated with the input.
VCCO is the supply voltage associated with the output.
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tW
VI
90 %
negative
pulse
VM
VM
10 %
0V
tf
tr
tr
VI
tf
90 %
positive
pulse
VM
VM
10 %
0V
tW
VEXT
VCC
G
VI
RL
VO
DUT
CL
RL
001aal963
Test data is given in Table 14.
All input pulses are supplied by generators having the following characteristics: PRR ≤ 10 MHz; ZO = 50 Ω; dV/dt ≥ 1.0 V/
ns.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Figure 5. Test circuit for measuring switching times
Table 14. Test data
Supply voltage
Input
VCC(A)
VCC(B)
[1]
VI
Δt/ΔV
0.95 V to 3.6 V
1.65 V to 5.5 V
VCCI
≤ 1.0 ns/V
[1]
[2]
[3]
Load
VEXT
CL
[2]
RL
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ
[3]
15 pF
50 kΩ, 1 MΩ
open
open
2VCCO
VCCI is the supply voltage associated with the input.
For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 MΩ. For measuring enable and disable times, RL =
50 kΩ.
VCCO is the supply voltage associated with the output.
14 Application information
14.1 Applications
Voltage level-translation applications. The NTS0308E can be used in point-to-point
applications to interface between devices or systems operating at different supply
2
voltages. The device is primarily targeted at I C or 4-wire which use open-drain drivers.
It may also be used in applications where push-pull drivers are connected to the ports,
however the NTB010x or the newer lower voltage NTB030x series of devices are more
suitable.
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1.8 V
3.3 V
1.8 V
VCC(A)
VCC(B)
3.3 V
OE
SYSTEM
CONTROLLER
NTS0308x
DATA
A
SYSTEM
B
DATA
aaa-035335
Figure 6. Typical operating circuit
14.2 Architecture
The architecture of the NTS0308E is shown in Figure 7. The device does not require an
extra input signal to control the direction of data flow from A to B or B to A.
VCC(A)
VCC(B)
T1
10 kΩ
ONE-SHOT
AND SLEW
RATE
CONTROL
ONE-SHOT
AND SLEW
RATE
CONTROL
T2
10 kΩ
GATE BIAS CONTROL
A
T3
HBM JESD22-A114E
B
IEC61000-4-2
aaa-031819
Figure 7. Architecture of NTS0308E I/O cell
The NTS0308E is a "switch" type voltage translator using two key circuits to enable
voltage translation:
1. A pass-gate transistor (N-channel) that ties the ports together.
2. An output edge-rate accelerator that detects and accelerates rising edges on the I/O
pins.
The gate bias voltage of the pass gate transistor (T3) is set at approximately one
threshold voltage above the VCC level of the low-voltage side. During a LOW-to-HIGH
transition, the output one-shot accelerates the output transition by switching on the
PMOS transistors (T1, T2). It bypasses the 10 kΩ pull-up resistors and increases
the current drive capability. The one-shot is activated once the input transition
reaches approximately VCCI/2; it is deactivated approximately 50 ns after the output
reaches VCCO/2. During the acceleration time, the driver output resistance is between
approximately 50 Ω and 70 Ω. To avoid signal contention and minimize dynamic ICC,
the user should wait for the one-shot circuit to turn-off before applying a signal in the
opposite direction. Pull-up resistors are included in the device for DC current sourcing
capability.
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14.3 Input driver requirements
As the NTS0308E is a switch type translator, properties of the input driver directly
affect the output signal. The external open-drain or push-pull driver applied to an I/O
determines the static current sinking capability of the system. The max data rate, HIGHto-LOW output transition time (tTHL), and propagation delay (tPHL), are dependent upon
the output impedance and edge-rate of the external driver. The limits provided for these
parameters in the data sheet assume a driver with output impedance below 50 Ω is used.
14.4 Output load considerations
The maximum lumped capacitive load that can be driven is dependent upon the one-shot
pulse duration. In cases with very heavy capacitive loading, there is a risk that the output
does not reach the positive rail within the one-shot pulse duration. The NTS0308E has a
longer one-shot pulse for driving larger capacitive loads.
To avoid excessive capacitive loading and to ensure correct triggering of the one-shot,
use short trace lengths and low capacitance connectors on NTS0308E PCB layouts. The
length of the PCB trace should be such that the round-trip delay of any reflection is within
the one-shot pulse duration (approximately 50 ns). It ensures low impedance termination
and avoids output signal oscillations and one-shot retriggering.
14.5 Output single shot slew rate control
Integrated slew-rate control and timed increase of the one-shot driver output current
reduce EMI. An additional comparator circuit on the VOUT side starts to reduce the oneshot driver current when VOUT > 0.65VOUT with a slight delay, so it can safely drive the
output voltage to a safe high-level while at the same time reducing the driver strength
early enough to reduce overshoots and ringing.
14.6 Power-up
During operation, VCC(A) must never be higher than VCC(B). However, during power-up,
VCC(A) ≥ VCC(B) does not damage the device, so either power supply can be ramped up
first. There is no special power-up sequencing required. The NTS0308E includes circuitry
that disables all output ports when either VCC(A) or VCC(B) is switched off.
14.7 Enable and disable
An output enable input (OE) is used to disable the device. Setting OE = LOW causes all
I/Os to assume the high-impedance OFF-state. The disable time (tdis with no external
load) indicates the delay between when OE goes LOW and when outputs actually
become disabled. The enable time (ten) indicates the amount of time the user must allow
for one-shot circuitry to become operational after OE is taken HIGH. To ensure the highimpedance OFF-state during power-up or power-down, pin OE should be tied to GND
through a pull-down resistor. The current-sourcing capability of the driver determines the
minimum value of the resistor.
14.8 Pull-up or pull-down resistors on I/Os lines
The A port I/O has an internal 10 kΩ pull-up resistor to VCC(A). The B port I/O has an
internal 10 kΩ pull-up resistor to VCC(B). If a smaller value of pull-up resistor is required,
NTS0308E
Product data sheet
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NTS0308E
NXP Semiconductors
8-bit dual supply translating transceiver; open drain; auto direction sensing
add an external resistor in parallel to the internal 10 kΩ. This pull-up resistor affects the
VOL level. When OE goes LOW, the internal pull-ups of the NTS0308E are disabled.
14.9 ESD protection on I/Os lines
The NTS0308E contains rail to rail ESD protection structures connecting the A and B I/
O to their respective supply. As a consequence, if a supply pin is pulled LOW, the related
I/Os are pulled low too through the upper ESD protection diode and the 10 kΩ pull-up
resistor. Additionally, besides the normal HBM and CDM ESD protection features on both
A and B Port I/O the B Port I/O features integrated ESD protection to IEC 61000-4-2
Class 4 system ESD level of 8kV contact for when users plug cameras, games, and other
items into their USB or video ports in real-world ESD stress applications.
NTS0308E
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8-bit dual supply translating transceiver; open drain; auto direction sensing
15 Package outline
TSSOP20: plastic thin shrink small outline package; 20 leads; body width 4.4 mm
D
SOT360-1
E
A
X
c
HE
y
v M A
Z
11
20
Q
A2
pin 1 index
(A 3 )
A1
A
θ
Lp
1
L
10
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (2)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.1
0.15
0.05
0.95
0.80
0.25
0.30
0.19
0.2
0.1
6.6
6.4
4.5
4.3
0.65
6.6
6.2
1
0.75
0.50
0.4
0.3
0.2
0.13
0.1
0.5
0.2
8o
0o
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic interlead protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
SOT360-1
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
99-12-27
03-02-19
MO-153
Figure 8. Package outline SOT360-1 (TSSOP20)
NTS0308E
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16 Soldering
Footprint information for reflow soldering of TSSOP20 package
SOT360-1
Hx
Gx
P2
(0.125)
Hy
Gy
(0.125)
By
Ay
C
D2 (4x)
D1
P1
Generic footprint pattern
Refer to the package outline drawing for actual layout
solder land
occupied area
DIMENSIONS in mm
P1
P2
Ay
By
C
D1
D2
Gx
Gy
Hx
Hy
0.650
0.750
7.200
4.500
1.350
0.400
0.600
6.900
5.300
7.300
7.450
sot360-1_fr
Figure 9. Soldering footprint for SOT360-1 (TSSOP20)
NTS0308E
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17 Abbreviations
Table 15. Abbreviations
Acronym
Description
CDM
Charged Device Model
DUT
Device Under Test
ESD
ElectroStatic Discharge
GPIO
General Purpose Input Output
HBM
Human Body Model
2
I C
Inter-Integrated Circuit
IEC
International Electrotechnical Commission
MM
Machine Model
PCB
Printed-Circuit Board
PMOS
Positive Metal Oxide Semiconductor
SMBus
System Management Bus
UART
Universal Asynchronous Receiver Transmitter
18 Revision history
Table 16. Revision history
Document ID
Release date Data sheet status
Change notice
Supersedes
NTS0308E v.1.1
20210413
202103008I
NTS0308E v.1.0
Modifications:
• Table 6: Corrected TJ max from +85 °C to +125 °C.
NTS0308E v.1.0
20200609
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Product data sheet
Product data sheet
Product data sheet
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-
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19 Legal information
19.1 Data sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple
devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
19.2 Definitions
Draft — A draft status on a document indicates that the content is still
under internal review and subject to formal approval, which may result
in modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included in a draft version of a document and shall have no
liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
19.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability
for the consequences of use of such information. NXP Semiconductors
takes no responsibility for the content in this document if provided by an
information source outside of NXP Semiconductors. In no event shall NXP
Semiconductors be liable for any indirect, incidental, punitive, special or
consequential damages (including - without limitation - lost profits, lost
savings, business interruption, costs related to the removal or replacement
of any products or rework charges) whether or not such damages are based
on tort (including negligence), warranty, breach of contract or any other
legal theory. Notwithstanding any damages that customer might incur for
any reason whatsoever, NXP Semiconductors’ aggregate and cumulative
liability towards customer for the products described herein shall be limited
in accordance with the Terms and conditions of commercial sale of NXP
Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
NTS0308E
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes
no representation or warranty that such applications will be suitable
for the specified use without further testing or modification. Customers
are responsible for the design and operation of their applications and
products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications
and products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with
their applications and products. NXP Semiconductors does not accept any
liability related to any default, damage, costs or problem which is based
on any weakness or default in the customer’s applications or products, or
the application or use by customer’s third party customer(s). Customer is
responsible for doing all necessary testing for the customer’s applications
and products using NXP Semiconductors products in order to avoid a
default of the applications and the products or of the application or use by
customer’s third party customer(s). NXP does not accept any liability in this
respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
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No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or
the grant, conveyance or implication of any license under any copyrights,
patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In
the event that customer uses the product for design-in and use in automotive
applications to automotive specifications and standards, customer (a) shall
use the product without NXP Semiconductors’ warranty of the product for
NTS0308E
Product data sheet
such automotive applications, use and specifications, and (b) whenever
customer uses the product for automotive applications beyond NXP
Semiconductors’ specifications such use shall be solely at customer’s own
risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,
damages or failed product claims resulting from customer design and use
of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
19.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
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8-bit dual supply translating transceiver; open drain; auto direction sensing
Tables
Tab. 1.
Tab. 2.
Tab. 3.
Tab. 4.
Tab. 5.
Tab. 6.
Tab. 7.
Tab. 8.
Tab. 9.
Ordering information ..........................................2
Ordering options ................................................2
NTS0308E Pin description ................................ 3
Function table ....................................................3
Limiting values .................................................. 4
Recommended operating conditions ................. 4
Thermal resistance information ......................... 5
Typical static characteristics ..............................5
Typical supply current ....................................... 5
Tab. 10.
Tab. 11.
Tab. 12.
Tab. 13.
Tab. 14.
Tab. 15.
Tab. 16.
Static characteristics ......................................... 6
Dynamic characteristics for temperature
range -40 °C to +125 °C ................................... 7
Dynamic characteristics for temperature
range -40 °C to +125 °C ................................... 8
Measurement points ........................................11
Test data ..........................................................12
Abbreviations ...................................................18
Revision history ...............................................18
Figures
Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Logic symbol ..................................................... 2
NTS0308EPW pin configuration TSSOP20 .......................................................... 3
The data input (A, B) to data output (B, A)
propagation delay times .................................. 10
Enable and disable times ................................11
NTS0308E
Product data sheet
Fig. 5.
Fig. 6.
Fig. 7.
Fig. 8.
Fig. 9.
Test circuit for measuring switching times ....... 12
Typical operating circuit ...................................13
Architecture of NTS0308E I/O cell .................. 13
Package outline SOT360-1 (TSSOP20) ..........16
Soldering footprint for SOT360-1
(TSSOP20) ...................................................... 17
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Contents
1
2
3
4
4.1
5
6
6.1
6.2
7
8
9
10
11
12
13
14
14.1
14.2
14.3
14.4
14.5
14.6
14.7
14.8
14.9
15
16
17
18
19
General description ............................................ 1
Features and benefits .........................................1
Applications .........................................................1
Ordering information .......................................... 2
Ordering options ................................................ 2
Functional diagram ............................................. 2
Pinning information ............................................ 3
Pinning ............................................................... 3
Pin description ................................................... 3
Functional description ........................................3
Limiting values .................................................... 4
Recommended operating conditions ................ 4
Thermal characteristics ......................................5
Static characteristics .......................................... 5
Dynamic characteristics .....................................7
Waveforms ......................................................... 10
Application information .................................... 12
Applications ......................................................12
Architecture ......................................................13
Input driver requirements .................................14
Output load considerations .............................. 14
Output single shot slew rate control ................ 14
Power-up ..........................................................14
Enable and disable ..........................................14
Pull-up or pull-down resistors on I/Os lines ......14
ESD protection on I/Os lines ........................... 15
Package outline .................................................16
Soldering ............................................................17
Abbreviations .................................................... 18
Revision history ................................................ 18
Legal information .............................................. 19
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section 'Legal information'.
© NXP B.V. 2021.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 April 2021
Document identifier: NTS0308E
