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NX3DV221GM,115

NX3DV221GM,115

  • 厂商:

    NXP(恩智浦)

  • 封装:

    XFQFN10

  • 描述:

    IC USB 2.0 SWITCH HS 10XQFN

  • 数据手册
  • 价格&库存
NX3DV221GM,115 数据手册
NX3DV221 High-speed USB 2.0 switch with enable Rev. 4 — 19 June 2013 Product data sheet 1. General description The NX3DV221 is a high-bandwidth switch designed for the switching of high-speed USB 2.0 signals in handset and consumer applications. These applications could be cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch allows signal to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480 Mbps). 2. Features and benefits           Wide supply voltage range from 2.3 V to 3.6 V Switch voltage accepts signals up to 5.5 V 1.8 V control logic at VCC = 3.6 V Low-power mode when OE is HIGH (2 A maximum) 6  (maximum) ON resistance 0.1  (typical) ON resistance mismatch between channels 6 pF (typical) ON-state capacitance High bandwidth (1.0 GHz typical) Latch-up performance exceeds 100 mA per JESD 78B Class II Level A ESD protection:  HBM JESD22-A114F Class 3A exceeds 8000 V  CDM JESD22-C101E exceeds 1000 V  HBM exceeds 12000 V for I/O to GND protection  Specified from 40 C to +85 C 3. Applications  Routes signals for USB 1.0, 1.1 and 2.0 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 4. Ordering information Table 1. Ordering information Type number Package Temperature range Name Description Version NX3DV221GM 40 C to +85 C XQFN10 plastic extremely thin quad flat package; no leads; 10 terminals; body 2  1.55  0.5 mm SOT1049-3 NX3DV221TK 40 C to +85 C HVSON10 plastic thermal enhanced very thin small outline package; no leads; 10 terminals; 3  3  0.85 mm SOT650-2 5. Marking Table 2. Marking Type number Marking code[1] NX3DV221GM x21 NX3DV221TK x21 [1] The pin 1 indicator is located on the lower left corner of the device, below the marking code. 6. Functional diagram D+ D- 8 1 7 2 3 VCC 4 1D+ 1D2D+ 2D- CHARGE PUMP OE S 6 9 CONTROLLOGIC 001aao078 Fig 1. Logic symbol NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 2 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 7. Pinning information 7.1 Pinning  6 '   ' '   ' '   2(   *1' '  9&& 1;'9 '   9&& '   6 '   ' '   ' *1'   2( DDD DDD 7UDQVSDUHQWWRSYLHZ 7UDQVSDUHQWWRSYLHZ Fig 2. 1;'9 WHUPLQDO LQGH[DUHD Pin configuration SOT1049-3 (XQFN10) Fig 3. Pin configuration SOT650-2 (HVSON10) 7.2 Pin description Table 3. Pin description Symbol Pin Description 1D+ 1 independent input or output 1D 2 independent input or output 2D+ 3 independent input or output 2D 4 independent input or output GND 5 ground (0 V) OE 6 output enable input (active LOW) D 7 common input or output D+ 8 common input or output S 9 select input VCC 10 supply voltage 8. Functional description Table 4. Function table[1] Input Channel S OE L L D+ = 1D+; D = 1D H L D+ = 2D+; D = 2D X H switches off [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care. NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 3 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VCC supply voltage S, OE input Min Max Unit 0.5 +4.6 V [1] 0.5 +7.0 V [2] 0.5 +7.0 V VI input voltage VSW switch voltage IIK input clamping current VI < 0.5 V 50 - mA ISK switch clamping current VI < 0.5 V 50 - mA ISW switch current - 120 mA ICC supply current - +100 mA IGND ground current 100 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation - 250 mW Tamb = 40 C to +125 C [1] The minimum input voltage rating may be exceeded if the input current rating is observed. [2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed. 10. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter VCC supply voltage Conditions S, OE input Min Max Unit 2.3 3.6 V VI input voltage 0 VCC V VSW switch voltage 0 5.5 V Tamb ambient temperature 40 +85 C 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Tamb = 25 C Tamb =-40 C to +85 C Unit Symbol Parameter Conditions Min Typ Max Min Max VIH HIGH-level input voltage VCC = 2.3 V to 2.7 V - - - 0.46VCC - V VCC = 2.7 V to 3.6 V - - - 0.46VCC - V VIL LOW-level input voltage VCC = 2.3 V to 2.7 V - - - - 0.25VCC V VCC = 2.7 V to 3.6 V - - - - 0.25VCC V VIK input clamping voltage VCC = 2.7 V, 3.6 V; II = 18 mA - - - - 1.8 V II input leakage current S, OE input; VCC = 0 V, 2.7 V, 3.6; VI = GND to 3.6 V - 0.01 - - 1 A NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 4 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable Table 7. Static characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol IOFF IS(OFF) Parameter Tamb = 25 C Conditions Min Typ Max Min Max power-off per pin; VCC = 0 V leakage current VSW = 0 V to 2.7 V - 0.01 - - 2.0 A VSW = 0 V to 3.6 V - 0.01 - - 2.0 A VSW = 0 V to 5.25 V - 0.01 - - 3.0 A - - - - 1 A OE = GND - 18.5 - - 30 A OE = VCC (low-power mode) - 0.01 - - 2 A VCC = 2.7 V - 0.8 - - 1.8 A VCC = 3.6 V - 12.5 - - 20 A OFF-state nD+ and nD- ports; leakage current see Figure 4 VCC = 2.7 V, 3.6 V ICC ICC Tamb =-40 C to +85 C Unit supply current additional supply current VCC = 2.7 V, 3.6 V S, OE input; one input at 1.8 V; other inputs at GND or VCC CI input capacitance VSW = GND or VCC; VCC = 2.5 V, 3.3 V - 1 - - 2.5 pF CS(OFF) OFF-state capacitance VSW = GND or VCC; VCC = 2.5 V, 3.3 V - 3 - - 5.0 pF CS(ON) ON-state capacitance VSW = GND or VCC; VCC = 2.5 V, 3.3 V - 6 - - 7.5 pF 11.1 Test circuits VCC VIL or VIH S switch S OE 1 VIL VIH 2 VIH VIH 1Dn 1 Dn switch 2Dn 2 IS OE GND VIH VI VO 001aao080 VI = 0 V; VO = 0 V to 5.25 V Fig 4. Test circuit for measuring OFF-state leakage current NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 5 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 11.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 6. Symbol RON RON Parameter ON resistance Tamb = 40 C to +85 C Conditions Max Min Max VI = 0 V; II = 30 mA - 3.6 - - 6  VI = 2.4 V; II = 15 mA - 4.3 - - 7  - 0.1 - - -  - 0.1 - - -  II = 30 mA - 0.8 - - -  II = 15 mA - 0.7 - - -  VCC = 2.3 V, 3.0 V see Figure 5 [2] ON resistance VCC = 2.3 V, 3.0 V mismatch VI = 0 V; between channels II = 30 mA ON resistance (flatness) Unit Min VI = 1.7 V; II = 15 mA RON(flat) Tamb = 40 C to +85 C Typ[1] [3] VCC = 2.3 V, 3.0 V; VI = 0 V to VCC [1] Typical values are measured at Tamb = 25 C. [2] Measured at identical VCC, temperature and input voltage. [3] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. 11.3 ON resistance test circuit and waveforms V VCC VIL or VIH S VSW 1Dn 1 Dn switch switch S OE 1 VIL VIL 2 VIH VIL 2Dn 2 OE GND VIL VI ISW 001aao081 RON = VSW / ISW. Fig 5. Test circuit for measuring ON resistance NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 6 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 001aao082 5.0 RON (Ω) 4.5 4.0 3.5 3.0 Fig 6. 0 1 2 VI (V) 3 ON resistance as a function of input voltage 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 10. Symbol Parameter Tamb = 25 C Conditions Min tpd ten propagation delay enable time Dn to nDn or nDn to Dn; see Figure 7 disable time Product data sheet Min Unit Max [2][3] VCC = 2.3 V to 2.7 V - 0.25 - - - ns - 0.25 - - - ns [3] S to Dn, nDn; see Figure 9 VCC = 2.3 V to 2.7 V - - - - 50 ns VCC = 3.0 V to 3.6 V - - - - 30 ns [3] VCC = 2.3 V to 2.7 V - - - - 32 ns VCC = 3.0 V to 3.6 V - - - - 17 ns [3] S to Dn, nDn; see Figure 9 VCC = 2.3 V to 2.7 V - - - - 23 ns VCC = 3.0 V to 3.6 V - - - - 12 ns [3] OE to Dn, nDn; see Figure 9 NX3DV221 Tamb = 40 C to +85 C Max VCC = 3.0 V to 3.6 V OE to Dn, nDn; see Figure 9 tdis Typ[1] VCC = 2.3 V to 2.7 V - - - - 12 ns VCC = 3.0 V to 3.6 V - - - - 10 ns All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 7 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable Table 9. Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit, see Figure 10. Symbol tsk(o) tsk(p) Parameter output skew time pulse skew time Tamb = 25 C Conditions Tamb = 40 C to +85 C Unit Min Typ[1] Max Min Max VCC = 2.3 V to 2.7 V - 0.1 - - 0.2 ns VCC = 3.0 V to 3.6 V - 0.1 - - 0.2 ns VCC = 2.3 V to 2.7 V - 0.1 - - 0.2 ns VCC = 3.0 V to 3.6 V - 0.1 - - 0.2 ns [4] see Figure 8 [4] see Figure 7 [1] Typical values are measured at Tamb = 25 C and VCC = 2.5 V and 3.3 V respectively. [2] The propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance). [3] tpd is the same as tPLH and tPHL. [4] Guaranteed by design. 12.1 Waveforms, test circuit and graphs 800 mV input 50% 400 mV tPLH tPHL VOH 50% output VOL 001aao083 Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. tsk(p) = |tPHL  tPLH|. Fig 7. The data input to output propagation delay times and pulse skew time NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 8 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 800 mV input 50% 400 mV tPLH(1) tPHL(1) VOH 50% output 1 VOL tsk(o) tsk(o) VOH 50% output 2 VOL tPLH(2) tPHL(2) 001aao084 Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. tsk(o) = |tPLH(1)  tPLH(2)| or |tPHL(1)  tPHL(2)|. Fig 8. Output skew time VI S, OE input VM VM GND ten output OFF to HIGH HIGH to OFF tdis VOH VX VX GND ten tdis output HIGH to OFF OFF to HIGH VOH VX VX GND 001aao085 Measurement points are given in Table 10. Logic levels: VOL and VOH are typical output voltage levels that occur with the output load. Fig 9. Table 10. Enable and disable times Measurement points Supply voltage Input Output VCC VM VI VX 2.3 V to 3.6 V 0.5VI 1. 8 V 0.9VOH NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 9 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable VCC 1Dn Dn 2Dn OE VIL G VI VEXT = VCC RL CL RL CL GND 001aao086 Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. VI may be connected to S or OE. Fig 10. Test circuit for switching times Table 11. Test data Supply voltage Input Load VCC VI tr, tf CL RL 2.3 V to 3.6 V 1.8 V  5 ns 50 pF 500  + 0.5 V -0.5 V Time scale (0.25 ns/DIV) 001aao087 Fig 11. Eye-pattern 480 Mbps USB signal with no switch. NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 10 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable + 0.5 V -0.5 V Time scale (0.25 ns/DIV) 001aao088 Fig 12. Eye-pattern 480 Mbps USB signal with switch (normally closed path) + 0.5 V -0.5 V Time scale (0.25 ns/DIV) 001aao089 Fig 13. Eye-pattern 480 Mbps USB signal with switch (normally open path) NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 11 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf  5 ns; Tamb = 25 C. Symbol Parameter f(3dB) Conditions 3 dB frequency response Min RL = 50 ; see Figure 14 VCC = 2.3 V to 2.7 V isolation (OFF-state) Xtalk crosstalk [1] fi is biased at 350 mV. [2] Vi = 632 mV (p-p). Max Unit - 1.0 - GHz - 1.0 - GHz VCC = 2.3 V to 2.7 V - 38 - dB VCC = 3.0 V to 3.6 V - 38 - dB VCC = 2.3 V to 2.7 V - 40 - dB VCC = 3.0 V to 3.6 V - 40 - dB VCC = 3.0 V to 3.6 V iso Typ [1][2] fi = 250 MHz; RL = 50 ; see Figure 15 [1][2] [1][2] between switches; fi = 250 MHz; RL = 50 ; see Figure 16 12.3 Test circuits 350 mV VCC VIL or VIH S RL 1Dn 1 Dn switch switch S OE 1 VIL VIL 2 VIH VIL 2Dn 2 OE VIL fi dB GND 001aao090 To obtain 0 dBm level at output, adjust fi voltage. Increase fi frequency until dB meter reads 3 dB. Fig 14. Test circuit for measuring the frequency response when switch is in ON-state NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 12 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable VCC 350 mV 350 mV RL VIL or VIH switch S OE 1 VIH VIH 2 VIL VIH RL S 1Dn 1 Dn switch 2Dn 2 OE VIH fi dB GND 001aao091 To obtain 0 dBm level at input, adjust fi voltage. Fig 15. Test circuit for measuring isolation (OFF-state) VCC VIL or VIH S 350 mV 350 mV RL RL 1Dn 1 Dn 2Dn 2 OE VIH 50 Ω fi dB GND 001aao092 Fig 16. Test circuit for measuring crosstalk NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 13 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 13. Package outline XQFN10: plastic, extremely thin quad flat package; no leads; 10 terminals; body 1.55 x 2.00 x 0.50 mm SOT1049-3 X B D A terminal 1 index area E A A1 c detail X C C A B C Æv Æw b 5 y y1 C 6 4 e1 e 9 b1 1 10 terminal 1 index area L1 L 0 1 Dimensions Unit(1) mm max nom min 2 mm scale A 0.5 A1 b b1 c D 0.05 0.25 0.33 1.65 0.20 0.28 0.127 1.55 0.00 0.15 0.23 1.45 E e e1 2.1 2.0 1.9 0.5 1.5 L L1 0.48 0.40 0.43 0.35 0.38 0.30 v 0.1 w y y1 0.05 0.05 0.05 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. References Outline version IEC JEDEC JEITA SOT1049-3 --- MO255 --- sot1049-3_po European projection Issue date 10-12-06 11-03-30 Fig 17. Package outline SOT1049-3 (XQFN10) NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 14 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable HVSON10: plastic thermal enhanced very thin small outline package; no leads; 10 terminals; 3 x 3 x 0.85 mm SOT650-2 X A B D E A A1 c detail X terminal 1 index area e1 terminal 1 index area e 1 5 C C A B C v w b y1 C y L K Eh 10 6 Dh 0 1 scale Dimensions Unit mm 2 mm A(1) A1 b max 1.00 0.05 0.30 nom 0.85 0.03 0.25 min 0.80 0.00 0.18 c D(1) Dh E(1) Eh 0.2 3.1 3.0 2.9 2.5 2.4 2.3 3.1 3.0 2.9 1.7 1.6 1.5 e e1 K L v 2 0.41 0.35 0.28 0.45 0.35 0.30 0.1 0.5 w y 0.05 0.08 y1 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. References Outline version IEC JEDEC JEITA SOT650-2 --- MO-229 --- sot650-2_po European projection Issue date 09-03-16 09-03-18 Fig 18. Package outline SOT650-2 (HVSON10) NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 15 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 14. Abbreviations Table 13. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model 15. Revision history Table 14. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3DV221 v.4 20130619 Product data sheet - NX3DV221 v.3 - NX3DV221 v.2 Modifications: NX3DV221 v.3 • • Type number NX3DV221TK added. Package outline drawing added (Figure 18). 20120705 Product data sheet NX3DV221 v.2 20111109 Product data sheet - NX3DV221 v.1 NX3DV221 v.1 20110421 Product data sheet - - NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 16 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 16. Legal information 16.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 16.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. NX3DV221 Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 17 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NX3DV221 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 4 — 19 June 2013 © NXP B.V. 2013. All rights reserved. 18 of 19 NX3DV221 NXP Semiconductors High-speed USB 2.0 switch with enable 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance test circuit and waveforms . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . . 7 Waveforms, test circuit and graphs . . . . . . . . . 8 Additional dynamic characteristics . . . . . . . . . 12 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2013. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 19 June 2013 Document identifier: NX3DV221
NX3DV221GM,115 价格&库存

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NX3DV221GM,115
    •  国内价格
    • 5+5.39291
    • 10+4.32841
    • 50+3.50144
    • 100+2.79763
    • 200+2.67446
    • 500+2.47212
    • 1000+2.45453

    库存:3285