NX3L1T5157GM

NX3L1T5157 Low-ohmic single-pole double-throw switch Rev. 01 — 16 September 2008 Product data sheet 1. General description The NX3L1T5157 provides one low-ohmic single-pole double-throw analog switch, suitable for use as an analog or digital multiplexer/demultiplexer. It has a digital select input (S) with Schmitt trigger action, two independent inputs/outputs (Y0, Y1) and a common input/output (Z). Schmitt trigger action at the select input (S) makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 1.4 V to 3.6 V. A low input voltage threshold allows pin S to be driven by lower level logic signals without a significant increase in supply current ICC. This makes it possible for the NX3L1T5157 to switch 3.6 V signals with a 1.8 V digital controller, eliminating the need for logic level translation. The NX3L1T5157 allows signals with amplitude up to VCC to be transmitted from Z to Y0 or Y1, or from Y0 or Y1 to Z. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal attenuation and distortion of transmitted signals. 2. Features I Wide supply voltage range from 1.4 V to 3.6 V I Very low ON resistance (peak): N 1.6 Ω (typical) at VCC = 1.4 V N 1.0 Ω (typical) at VCC = 1.65 V N 0.55 Ω (typical) at VCC = 2.3 V N 0.50 Ω (typical) at VCC = 2.7 V I Break-before-make switching I High noise immunity I ESD protection: N HBM JESD22-A114E Class 3A exceeds 7500 V N MM JESD22-A115-A exceeds 200 V N CDM AEC-Q100-011 revision B exceeds 1000 V I CMOS low-power consumption I Latch-up performance exceeds 100 mA per JESD 78 Class II Level A I Direct interface with TTL levels at 3.0 V I Control input accepts voltages above supply voltage I Very low supply current, even when input is below VCC I High current handling capability (350 mA continuous current under 3.3 V supply) I Specified from −40 °C to +85 °C and from −40 °C to +125 °C NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 3. Applications I Cell phone I PDA I Portable media player 4. Ordering information Table 1. Ordering information Package Temperature range Name NX3L1T5157GM −40 °C to +125 °C XSON6 Description plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm Version SOT886 Type number 5. Marking Table 2. Marking Marking code DI Type number NX3L1T5157GM 6. Functional diagram Y1 S Y1 S Z Y0 001aai752 Z Y0 001aac355 Fig 1. Logic symbol Fig 2. Logic diagram NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 2 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 7. Pinning information 7.1 Pinning NX3L1T5157 S 1 6 Y1 VCC 2 5 GND Z 3 4 Y0 001aai753 Transparent top view Fig 3. Pin configuration SOT886 (XSON6) 7.2 Pin description Table 3. Symbol S VCC Z Y0 GND Y1 Pin description Pin 1 2 3 4 5 6 Description select input supply voltage common input or output independent input or output ground (0 V) independent input or output 8. Functional description Table 4. Input S L H [1] H = HIGH voltage level; L = LOW voltage level. Function table[1] Channel on Y0 Y1 NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 3 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 9. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC VI VSW IIK ISK ISW Parameter supply voltage input voltage switch voltage input clamping current switch clamping current switch current VI < −0.5 V VI < −0.5 V or VI > VCC + 0.5 V VSW > −0.5 V or VSW < VCC + 0.5 V; source or sink current VSW > −0.5 V or VSW < VCC + 0.5 V; pulsed at 1 ms duration, < 10 % duty cycle; peak current Tstg Ptot [1] [2] [3] [1] [2] Conditions Min −0.5 −0.5 −0.5 −50 - Max +4.6 +4.6 ±50 ±350 ±500 Unit V V mA mA mA mA VCC + 0.5 V storage temperature total power dissipation Tamb = −40 °C to +125 °C [3] −65 - +150 250 °C mW The minimum input voltage rating may be exceeded if the input current rating is observed. The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed. For XSON6 package: above 45 °C the value of Ptot derates linearly with 2.4 mW/K. 10. Recommended operating conditions Table 6. VCC VI VSW Tamb ∆t/∆V [1] Recommended operating conditions Conditions select input S [1] Symbol Parameter supply voltage input voltage switch voltage ambient temperature input transition rise and fall rate Min 1.4 0 0 −40 - Max 3.6 3.6 VCC +125 200 Unit V V V °C ns/V VCC = 1.4 V to 3.6 V [2] To avoid sinking GND current from terminal Z when switch current flows in terminal Yn, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Yn. In this case, there is no limit for the voltage drop across the switch. Applies to control signal levels. [2] NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 4 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 11. Static characteristics Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Conditions Min VIH HIGH-level input voltage VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VIL LOW-level input voltage VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V II input leakage current OFF-state leakage current ON-state leakage current select input S; VI = GND to 3.6 V; VCC = 1.4 V to 3.6 V Y0 and Y1 port; VCC = 1.4 V to 3.6 V; see Figure 4 Z port; VCC = 1.4 V to 3.6 V; see Figure 5 0.9 0.9 1.1 1.3 Tamb = 25 °C Typ Max 0.3 0.4 0.4 0.5 Tamb = −40 °C to +125 °C Min 0.9 0.9 1.1 1.3 Max Max (85 °C) (125 °C) 0.3 0.4 0.4 0.5 ±0.5 0.3 0.3 0.4 0.5 ±1 V V V V V V V V µA Unit IS(OFF) - - ±5 - ±50 ±500 nA IS(ON) - - ±5 - ±50 ±500 nA ICC supply current VI = VCC or GND; VCC = 3.6 V; VSW = GND or VCC additional VI = 2.6 V; VCC = 3.6 V; supply current VSW = GND or VCC VI = 1.8 V; VCC = 3.6 V; VSW = GND or VCC VI = 1.8 V; VCC = 2.5 V; VSW = GND or VCC - - 100 - 690 6000 nA ∆ICC - 0.35 2.5 50 1.0 35 130 0.7 4 200 - - 1 5 300 - 1 5 500 - µA µA nA pF pF pF CI CS(OFF) CS(ON) input capacitance OFF-state capacitance ON-state capacitance NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 5 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 11.1 Test circuits switch 1 VIL or VIH S Z Y0 Y1 1 2 2 switch IS S VIH VIL VCC VI VO GND 001aac358 VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V. Fig 4. Test circuit for measuring OFF-state leakage current VCC S Z Y0 Y1 1 2 switch 1 S VIH VIL VIL or VIH IS VI 2 switch VO GND 001aac359 VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V. Fig 5. Test circuit for measuring ON-state leakage current 11.2 ON resistance Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 12. Symbol RON(peak) Parameter ON resistance (peak) Conditions VI = GND to VCC; ISW = 100 mA; see Figure 6 VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 2.7 V ∆RON ON resistance mismatch between channels VI = GND to VCC; ISW = 100 mA VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 2.7 V NX3L1T5157_1 Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Min Typ[1] Max Min Max [2] 1.6 1.0 0.55 0.5 3.7 1.6 0.8 0.75 - 4.1 1.7 0.9 0.9 Ω Ω Ω Ω - 0.04 0.04 0.02 0.02 0.3 0.2 0.08 0.075 - 0.3 0.3 0.1 0.1 Ω Ω Ω Ω © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 6 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch Table 8. ON resistance …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 7 to Figure 12. Symbol RON(flat) Parameter ON resistance (flatness) Conditions VI = GND to VCC; ISW = 100 mA VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 2.7 V [1] [2] [3] Typical values are measured at Tamb = 25 °C. Measured at identical VCC, temperature and input voltage. Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature. [3] Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit Min Typ[1] Max Min Max - 1.0 0.5 0.15 0.13 3.3 1.2 0.3 0.3 - 3.6 1.3 0.35 0.35 Ω Ω Ω Ω 11.3 ON resistance test circuit and graphs 1.6 RON (Ω) 1.2 001aag564 VSW V VCC S Z VI (1) 0.8 switch 1 S VIL VIH 0.4 (3) ISW (4) (5) (2) VIL or VIH Y0 1 switch Y1 2 2 GND 001aag563 0 0 1 2 3 VI (V) 4 RON = VSW / ISW. (1) VCC = 1.5 V. (2) VCC = 1.8 V. (3) VCC = 2.5 V. (4) VCC = 2.7 V. (5) VCC = 3.3 V. Measured at Tamb = 25 °C. Fig 6. Test circuit for measuring ON resistance Fig 7. Typical ON resistance as a function of input voltage NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 7 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 1.6 RON (Ω) 1.2 001aag565 1.0 RON (Ω) 0.8 (1) (2) (3) (4) 001aag566 0.6 0.8 (1) (2) (3) (4) 0.4 0.4 0.2 0 0 1 2 VI (V) 3 0 0 1 2 VI (V) 3 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. Fig 8. ON resistance as a function of input voltage; VCC = 1.5 V Fig 9. ON resistance as a function of input voltage; VCC = 1.8 V 1.0 RON (Ω) 0.8 001aag567 1.0 RON (Ω) 0.8 001aag568 0.6 (1) (2) (3) (4) 0.6 (1) (2) (3) (4) 0.4 0.4 0.2 0.2 0 0 1 2 VI (V) 3 0 0 1 2 VI (V) 3 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. Fig 10. ON resistance as a function of input voltage; VCC = 2.5 V Fig 11. ON resistance as a function of input voltage; VCC = 2.7 V NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 8 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 1.0 RON (Ω) 0.8 001aag569 0.6 (1) (2) (3) (4) 0.4 0.2 0 0 1 2 3 VI (V) 4 (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C. Fig 12. ON resistance as a function of input voltage; VCC = 3.3 V 12. Dynamic characteristics Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 15. Symbol Parameter Conditions Min ten enable time S to Z or Yn; see Figure 13 VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V tdis disable time S to Z or Yn; see Figure 13 VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V 32 20 12 10 70 55 25 20 80 60 30 25 90 65 35 30 ns ns ns ns 50 36 24 22 90 70 45 40 120 80 50 45 120 90 55 50 ns ns ns ns 25 °C Typ[1] Max −40 °C to +125 °C Min Max (85 °C) Max (125 °C) Unit NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 9 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch Table 9. Dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 15. Symbol Parameter Conditions Min tb-m break-before-make see Figure 14 time VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V [1] [2] [2] 25 °C Typ[1] Max −40 °C to +125 °C Min Max (85 °C) Max (125 °C) - Unit - 19 17 13 10 - 9 7 4 3 ns ns ns ns Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V and 3.3 V respectively. Break-before-make guaranteed by design. 12.1 Waveform and test circuits VI S input GND ten VOH Y1 connected to VEXT Z output OFF to HIGH HIGH to OFF GND tdis Z output HIGH to OFF OFF to HIGH VOH VX ten VX 001aag570 VM tdis VX VX Y0 connected to VEXT GND Measurement points are given in Table 10. Logic level: VOH is typical output voltage level that occurs with the output load. Fig 13. Enable and disable times Table 10. VCC 1.4 V to 3.6 V Measurement points Input VM 0.5VCC Output VX 0.9VOH Supply voltage NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 10 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch VCC S Z Y0 Y1 VEXT = 1.5 V G VI V VO RL CL GND 001aag571 a. Test circuit VI 0.5VI 0.9VO VO tb-m 0.9VO 001aag572 b. Input and output measurement points Fig 14. Test circuit for measuring break-before-make timing VCC S Z Y0 Y1 1 2 switch G VI V VO RL CL VEXT = 1.5 V GND 001aag642 Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 15. Load circuit for switching times Table 11. VCC 1.4 V to 3.6 V Test data Input VI VCC tr, tf ≤ 2.5 ns Load CL 35 pF RL 50 Ω Supply voltage NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 11 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 12.2 Additional dynamic characteristics Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C. Symbol Parameter THD total harmonic distortion Conditions fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 16 VCC = 1.4 V; VI = 1 V (p-p) VCC = 1.65 V; VI = 1.2 V (p-p) VCC = 2.3 V; VI = 1.5 V (p-p) VCC = 2.7 V; VI = 2 V (p-p) f(−3dB) αiso Vct −3 dB frequency response isolation (OFF-state) crosstalk voltage RL = 50 Ω; see Figure 17 VCC = 1.4 V to 3.6 V fi = 100 kHz; RL = 50 Ω; see Figure 18 VCC = 1.4 V to 3.6 V between digital inputs and switch; fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 19 VCC = 1.4 V to 3.6 V Qinj charge injection fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V; Rgen = 0 Ω; see Figure 20 VCC = 1.5 V VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V [1] fi is biased at 0.5VCC. [1] [1] [1] Min - Typ 0.15 0.10 0.015 0.024 60 −90 Max - Unit % % % % MHz dB - 0.21 - V - 3 4 6 9 - pC pC pC pC 12.3 Test circuits VCC 0.5VCC RL switch 1 S VIL VIH VIL or VIH S Z Y0 1 switch Y1 2 2 fi D GND 001aag573 Fig 16. Test circuit for measuring total harmonic distortion NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 12 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch VCC 0.5VCC RL switch 1 S VIL VIH VIL or VIH S Z Y0 1 switch Y1 2 2 fi dB GND 001aag574 Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB. Fig 17. Test circuit for measuring the frequency response when channel is in ON-state 0.5VCC RL VCC 0.5VCC RL switch 1 S VIH VIL VIL or VIH S Z Y0 1 switch Y1 2 2 fi dB GND 001aag561 Adjust fi voltage to obtain 0 dBm level at input. Fig 18. Test circuit for measuring isolation (OFF-state) NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 13 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch switch VCC 1 2 S Z G logic input Y0 Y1 1 2 switch S VIL VIH VI RL RL CL V VO 0.5VCC 0.5VCC 001aah442 a. Test circuit logic input (S) off on off VO Vct 001aah443 b. Input and output pulse definitions Fig 19. Test circuit for measuring crosstalk voltage between digital inputs and switch NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 14 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch VCC S Z Y0 Y1 1 2 Rgen VI switch G VO RL CL Vgen GND 001aac366 a. Test circuit logic (S) off input on off VO ∆VO 001aac478 b. Input and output pulse definitions Definition: Qinj = ∆VO × CL. ∆VO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. Fig 20. Test circuit for measuring charge injection NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 15 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 13. Package outline XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm SOT886 b 1 2 3 4× L1 L (2) e 6 e1 5 e1 4 6× (2) A A1 D E terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A (1) max 0.5 A1 max 0.04 b 0.25 0.17 D 1.5 1.4 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT886 REFERENCES IEC JEDEC MO-252 JEITA EUROPEAN PROJECTION ISSUE DATE 04-07-15 04-07-22 Fig 21. Package outline SOT886 (XSON6) NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 16 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 14. Abbreviations Table 13. Acronym CDM CMOS ESD HBM MM PDA TTL Abbreviations Description Charged Device Model Complementary Metal-Oxide Semiconductor ElectroStatic Discharge Human Body Model Machine Model Personal Digital Assistant Transistor-Transistor Logic 15. Revision history Table 14. Revision history Release date 20080916 Data sheet status Product data sheet Change notice Supersedes Document ID NX3L1T5157_1 NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 17 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 16. Legal information 16.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 16.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 16.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com NX3L1T5157_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 16 September 2008 18 of 19 NXP Semiconductors NX3L1T5157 Low-ohmic single-pole double-throw switch 18. Contents 1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 Functional description . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Recommended operating conditions. . . . . . . . 4 Static characteristics. . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ON resistance test circuit and graphs. . . . . . . . 7 Dynamic characteristics . . . . . . . . . . . . . . . . . . 9 Waveform and test circuits . . . . . . . . . . . . . . . 10 Additional dynamic characteristics . . . . . . . . . 12 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 17 Legal information. . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Contact information. . . . . . . . . . . . . . . . . . . . . 18 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 16 September 2008 Document identifier: NX3L1T5157_1