NX3L1T53
Low-ohmic single-pole double-throw analog switch
Rev. 04 — 24 March 2010 Product data sheet
1. General description
The NX3L1T53 is a low-ohmic single-pole double-throw analog switch suitable for use as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two independent inputs/outputs (Y0 and Y1), a common input/output (Z) and an active LOW enable input (E). When pin E is HIGH, the switch is turned off. Schmitt trigger action at the digital inputs makes the circuit tolerant to slower input rise and fall times. Low threshold digital inputs allows this device to be driven by 1.8 V logic levels in 3.3 V applications without significant increase in supply current ICC. The NX3L1T53 allows signals with amplitude up to VCC to be transmitted from Z to Y0 or Y1; or from Y0 or Y1 to Z. It’s low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal attenuation and distortion of transmitted signals.
2. Features
Wide supply voltage range from 1.4 V to 4.3 V Very low ON resistance (peak): 1.6 Ω (typical) at VCC = 1.4 V 1.0 Ω (typical) at VCC = 1.65 V 0.55 Ω (typical) at VCC = 2.3 V 0.50 Ω (typical) at VCC = 2.7 V 0.50 Ω (typical) at VCC = 4.3 V Break-before-make switching High noise immunity ESD protection: HBM JESD22-A114E Class 3A exceeds 7500 V MM JESD22-A115-A exceeds 200 V CDM AEC-Q100-011 revision B exceeds 1000 V IEC61000-4-2 contact discharge exceeds 8000 V for switch ports CMOS low-power consumption Latch-up performance exceeds 100 mA per JESD 78 Class II Level A 1.8 V control logic at VCC = 3.6 V Control input accepts voltages above supply voltage Very low supply current, even when input is below VCC High current handling capability (350 mA continuous current under 3.3 V supply) Specified from −40 °C to +85 °C and from −40 °C to +125 °C
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
3. Applications
Cell phone PDA Portable media player
4. Ordering information
Table 1. Ordering information Package Temperature range NX3L1T53GT NX3L1T53GD NX3L1T53GM −40 °C to +125 °C −40 °C to +125 °C −40 °C to +125 °C Name XSON8 Description plastic extremely thin small outline package; no leads; 8 terminals; body 1 × 1.95 × 0.5 mm Version SOT833-1 SOT996-2 SOT902-1 Type number
XSON8U plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 × 2 × 0.5 mm XQFN8U plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 × 1.6 × 0.5 mm
5. Marking
Table 2. Marking codes[1] Marking code M53 M53 M53 Type number NX3L1T53GT NX3L1T53GD NX3L1T53GM
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
NX3L1T53_4
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Product data sheet
Rev. 04 — 24 March 2010
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
6. Functional diagram
6 Y1 7 Y0 E 2
S5 Z1
001aad386
Fig 1.
Logic symbol
Y0
S Z
Y1
E
001aad387
Fig 2.
Logic diagram
7. Pinning information
7.1 Pinning
NX3L1T53
Z 1 8 VCC
NX3L1T53
Z E 1 2 3 4 8 7 6 5 VCC Y0 Y1 S
E
2
7
Y0
GND
3
6
Y1 GND
GND
4
5
S
GND
001aaj537
001aaj955
Transparent top view
Transparent top view
Fig 3.
Pin configuration SOT833-1 (XSON8)
Fig 4.
Pin configuration SOT996-2 (XSON8U)
NX3L1T53_4
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Product data sheet
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
NX3L1T53
terminal 1 index area Y0 1 VCC 8
7
Z
Y1
2
6
E
S
3 4
5
GND
GND
001aaj538
Transparent top view
Fig 5.
Pin configuration SOT902-1 (XQFN8U)
7.2 Pin description
Table 3. Symbol Z E GND GND S Y1 Y0 VCC Pin description Pin SOT833-1 and SOT996-2 1 2 3 4 5 6 7 8 SOT902-1 7 6 5 4 3 2 1 8 common output or input enable input (active LOW) ground (0 V) ground (0 V) select input independent input or output independent input or output supply voltage Description
8. Functional description
Table 4. Input S L H X
[1]
Function table[1] Channel on E L L H Y0 to Z or Z to Y0 Y1 to Z or Z to Y1 switch off
H = HIGH voltage level; L = LOW voltage level; X = don’t care.
NX3L1T53_4
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Product data sheet
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
9. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol VCC VI VSW IIK ISK ISW Parameter supply voltage input voltage switch voltage input clamping current switch clamping current switch current VI < −0.5 V VI < −0.5 V or VI > VCC + 0.5 V VSW > −0.5 V or VSW < VCC + 0.5 V; source or sink current VSW > −0.5 V or VSW < VCC + 0.5 V; pulsed at 1 ms duration, < 10 % duty cycle; peak current Tstg Ptot
[1] [2] [3]
Conditions select input S and enable input E
[1] [2]
Min −0.5 −0.5 −0.5 −50 -
Max +4.6 +4.6 ±50 ±350 ±500
Unit V V mA mA mA mA
VCC + 0.5 V
storage temperature total power dissipation Tamb = −40 °C to +125 °C
[3]
−65 -
+150 250
°C mW
The minimum input voltage rating may be exceeded if the input current rating is observed. The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not exceed 4.6 V. For XSON8, XSON8U and XQFN8U packages: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
Table 6. VCC VI VSW Tamb Δt/ΔV
[1]
Recommended operating conditions Conditions select input S and enable input E
[1]
Symbol Parameter supply voltage input voltage switch voltage ambient temperature
Min 1.4 0 0 −40
[2]
Typ -
Max 4.3 4.3 VCC +125 200
Unit V V V °C ns/V
input transition rise and fall rate VCC = 1.4 V to 4.3 V
-
To avoid sinking GND current from terminal Z when switch current flows in terminal Yn, the voltage drop across the bidirectional switch must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Yn. In this case, there is no limit for the voltage drop across the switch. Applies to control signal levels.
[2]
NX3L1T53_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2010
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
11. Static characteristics
Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground 0 V). Symbol Parameter Conditions Min VIH HIGH-level input voltage VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 3.6 V to 4.3 V VIL LOW-level input voltage VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 3.6 V to 4.3 V II input leakage current OFF-state leakage current select input S and enable input E; VI = GND to 4.3 V; VCC = 1.4 V to 4.3 V Y0 and Y1 port; see Figure 6 VCC = 1.4 V to 3.6 V VCC = 3.6 V to 4.3 V IS(ON) ON-state leakage current Z port; see Figure 7 VCC = 1.4 V to 3.6 V VCC = 3.6 V to 4.3 V ±5 ±10 ±50 ±50 ±500 ±500 nA nA ±5 ±10 ±50 ±50 ±500 ±500 nA nA 0.9 0.9 1.1 1.3 1.4 Tamb = 25 °C Typ Max 0.3 0.4 0.4 0.5 0.6 Tamb = −40 °C to +125 °C Min 0.9 0.9 1.1 1.3 1.4 Max Max (85 °C) (125 °C) 0.3 0.4 0.4 0.5 0.6 ±0.5 0.3 0.3 0.4 0.5 0.6 ±1 V V V V V V V V V V μA Unit
IS(OFF)
ICC
supply current VI = VCC or GND; VSW = GND or VCC VCC = 3.6 V VCC = 4.3 V 2.0 0.35 7.0 2.5 50 1.0 35 130 100 150 4.0 0.7 10.0 4.0 200 690 800 7 1 15 5 300 6000 7000 7 1 15 5 500 nA nA μA μA μA μA nA pF pF pF
ΔICC
additional VSW = GND or VCC supply current VI = 2.6 V; VCC = 4.3 V VI = 2.6 V; VCC = 3.6 V VI = 1.8 V; VCC = 4.3 V VI = 1.8 V; VCC = 3.6 V VI = 1.8 V; VCC = 2.5 V
CI CS(OFF) CS(ON)
input capacitance OFF-state capacitance ON-state capacitance
NX3L1T53_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2010
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
11.1 Test circuits
VCC switch 1 VIL or VIH S Z E VIH
VI
S VIL VIH
E VIH VIH
Y0 Y1 GND
1 2
2 switch IS
VO
001aad390
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
Fig 6.
Test circuit for measuring OFF-state leakage current
VCC
switch 1 2 switch
S VIL VIH
E VIL VIL
VIL or VIH IS VIL
VI
S Z E
Y0 Y1 GND
1 2
VO
001aad391
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Fig 7.
Test circuit for measuring ON-state leakage current
11.2 ON resistance
Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15. Symbol RON(peak) Parameter ON resistance (peak) Conditions VI = GND to VCC; ISW = 100 mA; see Figure 8 VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 2.7 V VCC = 4.3 V 1.6 1.0 0.55 0.5 0.5 3.7 1.6 0.8 0.75 0.75 4.1 1.7 0.9 0.9 0.9 Ω Ω Ω Ω Ω −40 °C to +85 °C Min Typ[1] Max −40 °C to +125 °C Min Max Unit
NX3L1T53_4
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Product data sheet
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
Table 8. ON resistance …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15. Symbol ΔRON Parameter Conditions
[2]
−40 °C to +85 °C Min Typ[1] Max
−40 °C to +125 °C Min Max
Unit
ON resistance mismatch VI = GND to VCC; between channels ISW = 100 mA VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 2.7 V VCC = 4.3 V
[3]
0.04 0.04 0.02 0.02 0.02
0.3 0.2 0.08 0.075 0.075
-
0.3 0.3 0.1 0.1 0.1
Ω Ω Ω Ω Ω
RON(flat)
ON resistance (flatness) VI = GND to VCC; ISW = 100 mA VCC = 1.4 V VCC = 1.65 V VCC = 2.3 V VCC = 2.7 V VCC = 4.3 V
-
1.0 0.5 0.15 0.13 0.2
3.3 1.2 0.3 0.3 0.4
-
3.6 1.3 0.35 0.35 0.45
Ω Ω Ω Ω Ω
[1] [2] [3]
Typical values are measured at Tamb = 25 °C. Measured at identical VCC, temperature and input voltage. Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and temperature.
11.3 ON resistance test circuit and waveforms
VCC
V VSW Y0 Y1 1 2
switch 1 2 switch
S VIL VIH
E VIL VIL
VIL or VIH
S Z E
VIL
VI
GND
ISW
001aah456
RON = VSW / ISW.
Fig 8.
Test circuit for measuring ON resistance
NX3L1T53_4
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Product data sheet
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NX3L1T53
Low-ohmic single-pole double-throw analog switch
1.6 RON (Ω) 1.2
001aag564
(1)
0.8
(2) (3)
0.4
(4)
(5)
(6)
0 0 1 2 3 4 VI (V) 5
(1) VCC = 1.5 V. (2) VCC = 1.8 V. (3) VCC = 2.5 V. (4) VCC = 2.7 V. (5) VCC = 3.3 V. (6) VCC = 4.3 V. Measured at Tamb = 25 °C.
Fig 9.
ON resistance as a function of input voltage
1.6 RON (Ω) 1.2
001aag565
1.0 RON (Ω) 0.8
(1) (2) (3) (4)
001aag566
0.6 0.8
(1) (2) (3) (4)
0.4
0.4 0.2
0 0 1 2 VI (V) 3
0 0 1 2 VI (V) 3
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C.
Fig 10. ON resistance as a function of input voltage; VCC = 1.5 V
Fig 11. ON resistance as a function of input voltage; VCC = 1.8 V
NX3L1T53_4
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Product data sheet
Rev. 04 — 24 March 2010
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
1.0 RON (Ω) 0.8
001aag567
1.0 RON (Ω) 0.8
001aag568
0.6
(1) (2) (3) (4)
0.6
(1) (2) (3) (4)
0.4
0.4
0.2
0.2
0 0 1 2 VI (V) 3
0 0 1 2 VI (V) 3
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C.
Fig 12. ON resistance as a function of input voltage; VCC = 2.5 V
Fig 13. ON resistance as a function of input voltage; VCC = 2.7 V
1.0 RON (Ω) 0.8
001aag569
1.0 RON (Ω) 0.8
001aaj896
0.6
(1) (2) (3) (4)
0.6
(1) (2) (3) (4)
0.4
0.4
0.2
0.2
0 0 1 2 3 VI (V) 4
0 0 1 2 3 4 VI (V) 5
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C.
(1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. (4) Tamb = −40 °C.
Fig 14. ON resistance as a function of input voltage; VCC = 3.3 V
Fig 15. ON resistance as a function of input voltage; VCC = 4.3 V
NX3L1T53_4
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Product data sheet
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NX3L1T53
Low-ohmic single-pole double-throw analog switch
12. Dynamic characteristics
Table 9. Dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for load circuit see Figure 18. Symbol Parameter Conditions Min ten enable time S or E to Z or Yn; see Figure 16 VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 3.6 V to 4.3 V tdis disable time S or E to Z or Yn; see Figure 16 VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 3.6 V to 4.3 V tb-m break-before-make see Figure 17 time VCC = 1.4 V to 1.6 V VCC = 1.65 V to 1.95 V VCC = 2.3 V to 2.7 V VCC = 2.7 V to 3.6 V VCC = 3.6 V to 4.3 V
[1] [2]
[2]
25 °C Typ[1] Max
−40 °C to +125 °C Min Max (85 °C) Max (125 °C)
Unit
-
50 36 24 22 22
90 70 45 40 40
-
120 80 50 45 45
120 90 55 50 50
ns ns ns ns ns
-
32 20 12 10 10 19 17 13 10 10
70 55 25 20 20 -
9 7 4 3 2
80 60 30 25 25 -
90 65 35 30 30 -
ns ns ns ns ns ns ns ns ns ns
Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively. Break-before-make guaranteed by design.
NX3L1T53_4
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Product data sheet
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NX3L1T53
Low-ohmic single-pole double-throw analog switch
12.1 Waveform and test circuits
VI S, E input GND ten VOH output OFF to HIGH HIGH to OFF GND tdis VOH output HIGH to OFF OFF to HIGH GND VX ten VX VX VX tdis VM VM
001aah457
Measurement points are given in Table 10. Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.
Fig 16. Enable and disable times Table 10. VCC 1.4 V to 4.3 V Measurement points Input VM 0.5VCC Output VX 0.9VOH
Supply voltage
NX3L1T53_4
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Product data sheet
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NX3L1T53
Low-ohmic single-pole double-throw analog switch
VCC S Z E VIL VI G GND
001aah458
Y0 Y1
V
VO
RL
CL
VEXT = 1.5 V
a. Test circuit
VI
0.5VI
0.9VO VO tb-m
0.9VO
001aag572
b. Input and output measurement points Fig 17. Test circuit for measuring break-before-make timing
VCC S Z E VIL VI G GND
001aah459
Y0 Y1
1 2
switch
V
VO
RL
CL
VEXT = 1.5 V
Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. VI may be connected to S or E.
Fig 18. Test circuit for measuring switching times
NX3L1T53_4
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Product data sheet
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NX3L1T53
Low-ohmic single-pole double-throw analog switch
Table 11. VCC
Test data Input VI VCC tr, tf ≤ 2.5 ns Load CL 35 pF RL 50 Ω
Supply voltage 1.4 V to 4.3 V
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C. Symbol Parameter THD total harmonic distortion Conditions fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 19 VCC = 1.4 V; VI = 1 V (p-p) VCC = 1.65 V; VI = 1.2 V (p-p) VCC = 2.3 V; VI = 1.5 V (p-p) VCC = 2.7 V; VI = 2 V (p-p) VCC = 4.3 V; VI = 2 V (p-p) f(−3dB) αiso Vct −3 dB frequency response isolation (OFF-state) crosstalk voltage RL = 50 Ω; see Figure 20 VCC = 1.4 V to 4.3 V fi = 100 kHz; RL = 50 Ω; see Figure 21 VCC = 1.4 V to 4.3 V between digital inputs and switch; fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 22 VCC = 1.4 V to 3.6 V VCC = 3.6 V to 4.3 V Xtalk crosstalk between switches; fi = 100 kHz; RL = 50 Ω; see Figure 23 VCC = 1.4 V to 4.3 V Qinj charge injection fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V; Rgen = 0 Ω; see Figure 24 VCC = 1.5 V VCC = 1.8 V VCC = 2.5 V VCC = 3.3 V VCC = 4.3 V
[1] fi is biased at 0.5VCC.
[1] [1] [1] [1]
Min -
Typ 0.15 0.10 0.02 0.02 0.02 60 −90
Max -
Unit % % % % % MHz dB
-
0.2 0.3
-
V V
-
−90
-
dB
-
3 4 6 9 15
-
pC pC pC pC pC
NX3L1T53_4
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Product data sheet
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NX3L1T53
Low-ohmic single-pole double-throw analog switch
12.3 Test circuits
VCC 0.5VCC switch
RL
S VIL VIH
E VIL VIL
1 2
VIL or VIH
S Z E
Y0 Y1
1 2
switch
VIL
fi
D GND
001aah460
Fig 19. Test circuit for measuring total harmonic distortion
VCC
0.5VCC switch
RL
S VIL VIH
E VIL VIL
1 2
VIL or VIH
S Z E
Y0 Y1
1 2
switch
VIL
fi
dB GND
001aah461
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB.
Fig 20. Test circuit for measuring the frequency response when switch is in ON-state
0.5VCC
VCC
0.5VCC switch S VIH VIL E VIH VIH 1 2
RL
RL
VIL or VIH
S Z E
Y0 Y1
1 2
switch
VIH
fi
dB GND
001aah462
Adjust fi voltage to obtain 0 dBm level at input.
Fig 21. Test circuit for measuring isolation (OFF-state)
NX3L1T53_4
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Product data sheet
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
VCC
VIL or VIH
S Z
E
Y0 Y1
VI
G
logic input
RL
RL
CL
V
VO
0.5VCC
0.5VCC
001aah452
a. Test circuit
logic input (S, E)
off
on
off
VO
Vct
001aah453
b. Input and output pulse definitions
VI may be connected to S or E.
Fig 22. Test circuit for measuring crosstalk voltage between digital inputs and switch
VCC
0.5VCC
0.5VCC
RL
RL
VIL or VIH
S Z E
Y0 Y1
1 2
VIH
fi
dB
GND
001aah463
Fig 23. Test circuit for measuring crosstalk
NX3L1T53_4
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Product data sheet
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NX3L1T53
Low-ohmic single-pole double-throw analog switch
VCC S Z E VIL VI G
Rgen
Y0 Y1
1 2
switch
VO
RL
CL
Vgen
GND
001aad398
a. Test circuit
logic input (S, E)
off
on
off
VO
ΔVO
001aah451
b. Input and output pulse definitions
Qinj = ΔVO × CL. ΔVO = output voltage variation. Rgen = generator resistance. Vgen = generator voltage. VI may be connected to S or E.
Fig 24. Test circuit for measuring charge injection
NX3L1T53_4
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Product data sheet
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
13. Package outline
XSON8: plastic extremely thin small outline package; no leads; 8 terminals; body 1 x 1.95 x 0.5 mm SOT833-1
1
2
3
b 4 4× L
(2)
L1
e
8 e1
7 e1
6 e1
5
8×
(2)
A
A1 D
E
terminal 1 index area 0 DIMENSIONS (mm are the original dimensions) UNIT mm A(1) max 0.5 A1 max 0.04 b 0.25 0.17 D 2.0 1.9 E 1.05 0.95 e 0.6 e1 0.5 L 0.35 0.27 L1 0.40 0.32 1 scale 2 mm
Notes 1. Including plating thickness. 2. Can be visible in some manufacturing processes. OUTLINE VERSION SOT833-1 REFERENCES IEC --JEDEC MO-252 JEITA --EUROPEAN PROJECTION ISSUE DATE 07-11-14 07-12-07
Fig 25. Package outline SOT833-1 (XSON8)
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Product data sheet
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NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
XSON8U: plastic extremely thin small outline package; no leads; 8 terminals; UTLP based; body 3 x 2 x 0.5 mm
SOT996-2
D
B
A
E
A
A1
detail X terminal 1 index area e1 L1
1
e
b
4
v w
M M
CAB C
C y1 C y
L2
L
8 5
X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 0.05 0.00 b 0.35 0.15 D 2.1 1.9 E 3.1 2.9 e 0.5 e1 1.5 L 0.5 0.3 L1 0.15 0.05 L2 0.6 0.4 v 0.1 w 0.05 y 0.05 y1 0.1
OUTLINE VERSION SOT996-2
REFERENCES IEC --JEDEC JEITA ---
EUROPEAN PROJECTION
ISSUE DATE 07-12-18 07-12-21
Fig 26. Package outline SOT996-2 (XSON8U)
NX3L1T53_4 © NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2010
19 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
XQFN8U: plastic extremely thin quad flat package; no leads; 8 terminals; UTLP based; body 1.6 x 1.6 x 0.5 mm
SOT902-1
D terminal 1 index area
B
A
E
A A1
detail X
L1 L
e
4
e ∅v M C A B ∅w M C
5
C y1 C y
3
metal area not for soldering
2 6
b
e1
e1
7 1
terminal 1 index area
8
X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A max 0.5 A1 0.05 0.00 b 0.25 0.15 D 1.65 1.55 E 1.65 1.55 e 0.55 e1 0.5 L 0.35 0.25 L1 0.15 0.05 v 0.1 w 0.05 y 0.05 y1 0.05
OUTLINE VERSION SOT902-1
REFERENCES IEC --JEDEC MO-255 JEITA ---
EUROPEAN PROJECTION
ISSUE DATE 05-11-25 07-11-14
Fig 27. Package outline SOT902-1 (XQFN8U)
NX3L1T53_4 © NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2010
20 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
14. Abbreviations
Table 13. Acronym CDM CMOS ESD HBM MM Abbreviations Description Charged Device Model Complementary Metal-Oxide Semiconductor ElectroStatic Discharge Human Body Model Machine Model
15. Revision history
Table 14. Revision history Release date 20100324 20100201 Data sheet status Product data sheet Product data sheet Change notice Supersedes NX3L1T53_3 NX3L1T53_2 Document ID NX3L1T53_4 NX3L1T53_3 Modifications: NX3L1T53_2 NX3L1T53_1
• •
Section 2: IEC61000-4-2 added. Table 8: ON resistance (flatness) changed at VCC = 4.3 V. Product data sheet Product data sheet NX3L1T53_1 -
20090414 20090217
NX3L1T53_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2010
21 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
16. Legal information
16.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
16.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be
NX3L1T53_4
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2010
22 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
17. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NX3L1T53_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 24 March 2010
23 of 24
NXP Semiconductors
NX3L1T53
Low-ohmic single-pole double-throw analog switch
18. Contents
1 2 3 4 5 6 7 7.1 7.2 8 9 10 11 11.1 11.2 11.3 12 12.1 12.2 12.3 13 14 15 16 16.1 16.2 16.3 16.4 17 18 General description . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3 Pinning information . . . . . . . . . . . . . . . . . . . . . . 3 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 Functional description . . . . . . . . . . . . . . . . . . . 4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5 Recommended operating conditions. . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ON resistance . . . . . . . . . . . . . . . . . . . . . . . . . . 7 ON resistance test circuit and waveforms . . . . 8 Dynamic characteristics . . . . . . . . . . . . . . . . . 11 Waveform and test circuits . . . . . . . . . . . . . . . 12 Additional dynamic characteristics . . . . . . . . . 14 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 21 Legal information. . . . . . . . . . . . . . . . . . . . . . . 22 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 22 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Contact information. . . . . . . . . . . . . . . . . . . . . 23 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 March 2010 Document identifier: NX3L1T53_4