NX5P3001
Bidirectional high-side power switch for charger and
USB-OTG combined applications
Rev. 1 — 11 September 2013
Product data sheet
1. General description
The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for
combined USB-OTG and charger port applications. It includes undervoltage lockout,
overvoltage lockout and overtemperature protection circuits designed to automatically
isolate the power switch terminals when a fault condition occurs.
The device features two power switch input/output terminals (VBUSI and VBUSO), an
open-drain acknowledge output (ACK), an enable input which includes logic level
translation (EN) and low capacitance Transient Voltage Suppression (TVS) type
ESD-clamps for USB data and ID pins.
When EN is set HIGH the device enters a low-power mode, disabling all protection
circuits. When used in combined charger and USB-OTG applications the 30 V tolerant
VBUSI switch terminal is used as the supply and switch input when charging, for
USB-OTG the VBUSO switch terminal is used as the supply and switch input.
Designed for operation from 3.2 V to 6.35 V, it is used in battery charging and power
domain isolation applications to reduce power dissipation and extend battery life.
2. Features and benefits
30 V tolerant VBUSI supply pin
Wide supply voltage range from 3.2 V to 6.35 V
Automatic switch operation for charging within the supply range
ISW maximum 3 A continuous current
Low ON resistance: 62 m (typical) at a supply voltage of 5.0 V
1.8 V control logic input to open the switch
Soft start turn-on slew rate
Protection circuitry
Overtemperature protection
Overvoltage lockout
Undervoltage lockout
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV
CDM AEC standard Q100-01 (JESD22-C101E)
IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUSI, D, D+ and ID
Specified from 40 C to +85 C
NX5P3001
NXP Semiconductors
Bidirectional power switch for charger and USB-OTG combinations
3. Applications
Smart and feature phones
Tablets, eBooks
4. Ordering information
Table 1.
Ordering information
Type number
NX5P3001UK
Package
Temperature range Name
Description
Version
40 C to +85 C
wafer level chip-scale package, 12 bumps;
body 1.36 1.66 0.51 mm (Backside Coating
included)
NX5P3001
WLCSP12
5. Marking
Table 2.
Marking codes
Type number
Marking code
NX5P3001UK
X05P3
6. Functional diagram
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Logic diagram (simplified schematic)
NX5P3001
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 September 2013
© NXP B.V. 2013. All rights reserved.
2 of 20
NX5P3001
NXP Semiconductors
Bidirectional power switch for charger and USB-OTG combinations
7. Pinning information
7.1 Pinning
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Fig 4.
Ball mapping for WLCSP12
7.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
VBUSO
A3, B2, B3
VBUSO (output/input supply)
VBUSI
A1, A2, B1
VBUSI (input supply/output)
ACK
C1
acknowledge condition indicator (open-drain output)
GND
C2
ground (0 V)
EN
C3
enable input (active LOW)
D-
D1
ESD-protection I/O
D+
D2
ESD-protection I/O
ID
D3
ESD-protection I/O
NX5P3001
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 September 2013
© NXP B.V. 2013. All rights reserved.
3 of 20
NX5P3001
NXP Semiconductors
Bidirectional power switch for charger and USB-OTG combinations
8. Functional description
Table 4.
Function table[1]
EN
VBUSI
VBUSO
ACK
Operation mode
L
< 3.2 V
< 3.2 V
Z
undervoltage lockout; switch open
L
3.2 V < VBUSI < 6.35 V
< 3.2 V
Z
enabled; switch closed; charging mode
L
< 3.2 V
> 3.2 V
Z
enabled; switch closed; OTG mode
L
X
X
0
overtemperature protection; switch open
L
> 6.35 V
X
0
overvoltage lockout; switch open
H
X
X
Z
disable; switch open
[1]
H = HIGH voltage level; L = LOW voltage level, Z = high-impedance OFF-state.
8.1 EN-input
A HIGH on EN disables the N-channel MOSFET and all protection circuits putting the
device into a low-power mode. A LOW on EN enables the protection circuits and then the
N-channel MOSFET.
8.2 Undervoltage lockout
When EN is LOW and VBUSI and VBUSO < 3.2 V, the UnderVoltage LockOut (UVLO)
circuits disable the N-channel MOSFET. Once VBUSI or VBUSO > 3.3 V and no other
protection circuits are active, the state of the N-channel MOSFET is controlled by the EN
pin.
8.3 Overvoltage lockout
When EN is LOW and VBUSI > 6.35 V, the OverVoltage LockOut (OVLO) circuit disables
the N-channel MOSFET and sets the ACK output LOW. Once VBUSI < 6.25 V and no
other protection circuits are active, ACK is set high impedance and the state of the
N-channel MOSFET is controlled by the EN pin.
8.4 Overtemperature protection
When EN is LOW and the device temperature exceeds 125 C the overtemperature
protection (OTP) circuit disables the N-channel MOSFET and set the ACK output LOW.
Once the device temperature decreases to below 115 C and no other protection circuits
are active, ACK is set high impedance and the state of the N-channel MOSFET is
controlled by the EN pin.
8.5 ACK output
The ACK output is an open-drain output that requires an external pull-up resistor. If OVLO
or OTP circuits are activated the ACK output is set LOW to indicate that a fault has
occurred. The ACK output will return to high impedance state automatically once the fault
condition is removed or EN is HIGH.
NX5P3001
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 11 September 2013
© NXP B.V. 2013. All rights reserved.
4 of 20
NX5P3001
NXP Semiconductors
Bidirectional power switch for charger and USB-OTG combinations
9. Application diagram
The NX5P3001 typically connects a USB port in a portable, battery operated device. The
ACK signal requires an additional external pull-up resistor which should be connected to a
supply voltage matching the logic input pin supply level it is connected to.
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