OL2385AHN/001C0Y

OL2385 Industrial RF transceiver Rev. 2.0 — 24 June 2021 1 Product data sheet COMPANY PUBLIC General information 1.1 General description The device is a fully integrated single-chip transceiver intended for use in an industrial environment. The device incorporates several commonly used building blocks including a crystal stabilized oscillator, a fractional-N-based phase-locked loop (PLL) for accurate frequency selection in both TX and RX, Low Noise Amplifier (LNA), attenuator for Automatic Gain Control (AGC), I/Q down-mixer and two high-resolution Analog to Digital Converters (ADC). The conversion into the digital domain is done in an early phase, enabling a software defined radio like approach. By transforming signals in the digital domain in an early phase, one highly configurable RX channel is available including channel mixer, channel filter, ASK/FSK demodulator, clock-data recovery, bit processor and a microcontroller memory interface (DMA) allowing the microcontroller to complete the data handling and handshaking. The device has an embedded RISC microcontroller optimized for high performance and low power as well as an EROM for customer applications. The device also includes a medium power UHF transmit system with a high dynamic range of - 35 to +14 dBm which makes it ideal for the use in narrowband communication systems. The TX system allows transmission with data rates up to 400 kbit/s NRZ. Power ramping and splatter avoidance filters are included to ensure that the transmit spectrum fulfills all the common standards in Europe, USA, and Asia. The phase noise of the transmitter supports ARIB operation. The device includes a series of timers to allow for autonomous polling and wake-up applications. The TX and RX data buffers are located in the RAM with autonomous direct memory access (DMA), reducing the 'real-time' overhead for the accompanying microcontroller. The device can be interfaced via SPI, UART, or LIN protocol compatible UART. Simplified programming of the device is facilitated by the HAL (Hardware Abstraction Layer). The transceiver is configured to operate with low active and standby power consumption, ideal for battery powered applications. New to NXP? OL2385 NXP Semiconductors Industrial RF transceiver 2 Features and benefits • • • • • • • • • • • • • • • • • • • • • • • • OL2385 Product data sheet COMPANY PUBLIC Single IC for worldwide usage in bands between 160 MHz and 960 MHz Wide dynamic range with AGC to achieve excellent blocking performance I/Q down conversion with digital IF processing and automatic gain compensation Integrated I/Q phase and amplitude mismatch compensation Receiver path with 2 multiplexed antenna inputs enables different antenna matching Advanced signal monitoring and data management for fast and reliable signal detection and processing High dynamic range RSSI measurement Programmable PA with digitally controlled power ramping and shaping Operation up to 400 kbit/s 4FSK for high data rate applications RX and TX data buffer in RAM with independent DMA channels Integrated temperature sensor for crystal temperature drift compensation Support of high accuracy external temperature sensor for ARIB systems Integrated 16-bit extended micro RISC kernel for system on chip solutions with up to 32 kByte EROM 10 independent DMA channels for powerful data transfer and configuration Integrated copy machine for fast data transfer Coprocessor for bit manipulation and code redundancy cycle calculation (CRC) Several timers for firmware development including 3 general purpose timers, 3 RX channel timers, low power mode polling timer and watch dog timer Clock driver for micro controller crystal sharing Controlled via SPI, UART, LIN compatible UART 10 bit ADC sensor interface with up to 100kSps sampling rate Tool chain (compiler, assembler, linker, debugger) with in circuit debug capability API available to simplify custom firmware development IREC evaluation and demonstration kit available for basic RF operation Remote control protocol (RCP) to operate RF without custom firmware via SPI/UART All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 2 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 3 Applications The IC supports the following system applications: • • • • • • • OL2385 Product data sheet COMPANY PUBLIC Low Power Wide Area networks (SigFox) Smart Metering (sub-GHz Zigbee) Home and building security and automation Remote control devices Wireless medical applications Wireless sensor network Industrial monitoring and control All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 3 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 4 Quick reference data Table 1. Quick reference data Parameter Conditions Min Typ Max Unit 960 MHz 1 General 1.1 UHF Carrier Frequency 1.2 Power Down Current 1.3 Supply Voltage 1.9 5.5 V 1.4 Operating Temperature -40 +85 °C 2 Transmitter 2.1 Supply Current 2.2 Max Output Power 2.3 Phase Noise @ 100 kHz Offset 3 Receiver 3.1 Supply Current 3.2 Data Rate 3.3 Sensitivity 158 700 nA XTAL 0.25 mA Tx @ 0 dBm 9 mA Tx @ 14dBm 29 mA 14 dBm 169 MHz band -120 dBc/Hz 434 MHz band -117 dBc/Hz 868 MHz band -109 dBc/Hz 925 MHz band -108 dBc/Hz @ 45 kHz BW 11 mA @ 10 kHz BW 11 mA 400 kbit/s ASK/OOK @ 10 kHz BW -123 dBm 3.3.1 FSK @ 50 kHz BW -112 dBm 3.3.2 FSK @ 10 kHz BW -124 dBm 868 MHz >50 dB 60 dB 3.5 Adjacent channel rejection 3.6 Image channel rejection (calibrated) 3.7 Channel Filter Band Width 3.8 RSSI 3.10 4 Dynamic Range @ 10kHz BW 120 Variation -3 360 kHz dB 3 dB 4 Micro-controller 4.1 EROM 32 kByte 4.2 Customer RAM 7 kByte OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 4 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 5 Ordering information Table 2. Ordering information Type number Package Name Description Version OL2385AHN/00100 [1] HVQFN48 Plastic thermal enhanced very thin quad flat package; no leads; 48 terminals; body 7 x 7 x 0.85 mm; terminal pitch 0.5 mm; wettable flanks SOT619-13 OL2385AHN/001A1 [2] HVQFN48 Plastic thermal enhanced very thin quad flat package; no leads; 48 terminals; body 7 x 7 x 0.85 mm; terminal pitch 0.5 mm; wettable flanks SOT619-13 OL2385AHN/001A2 [2] HVQFN48 Plastic thermal enhanced very thin quad flat package; no leads; 48 terminals; body 7 x 7 x 0.85 mm; terminal pitch 0.5 mm; wettable flanks SOT619-13 [1] [2] Generic version without preflashed software SigFox software stack preflashed OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 5 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 6 Marking Table 3. Marking information Line Example Description A OL2385 OL2385 2385 = Type number B ******* ID: *****xx (* = Diffusion lot number + x = Assembly ID); In case the number of digits exceeds 7, ID is truncated by sequentially removing positions from left to right. C ZSDyww* Z = Manufacturer Code SSMC S = Assembly Centre Kaohsiung D = RoHS2006 yww = Date Code (Y = year, W = calendar week) * = Release Status X = customer engineering sample (CES) Y = customer qualification sample (CQS) _ = released samples (RFS) D 2385ABrrff 2385 = Type number A = std version B = BOM version rr = Rom Code version ff = SW version OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 6 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 7 Block diagram Figure 1. Block diagram OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 7 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 8 Pinning information The circuit is packaged in a HVQFN48 with wettable flanks. 8.1 Pinning Figure 2. Pinout HVQFN48 8.1.1 Pin 1 keep out area For the purpose of package orientation, so called "pin 1" identification is included. This can either be as an additional small pin / pad as shown in design 1 (left) of Figure 3, or a notch in the die pad as shown in design 2 (right) of Figure 3. Note that the pin 1 identifier is electrically connected to the ground plate. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 8 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Pin 1 Vo keep-out area design 1 design 2 aaa-003680 Figure 3. Pin 1 keep out area 8.2 Pin description Table 4. Pinning description Symbol RF_IN_B GND_RF [6] TRXSWITCH_RX GND_RF [6] Pin Description 1 RF receiver input B (internally multiplexed with RF receiver input A) 2 Ground 3 TRX switch (interface to RX part) 4 Ground TRXSWITCH_ANT 5 GND_RF [2], [6] TRX switch (interface to antenna) 6 Ground - connected to exposed die pad area TRXSWITCH_TX 7 TRX switch (interface to TX part) GND_PA_RF 8 Ground 9 Power amplifier output GND_PA 10 Ground VREGPA 11 Regulated power amplifier supply, requires external choke to TXOUT VDD_PA 12 Power supply for PA block in transmit path VDD_XO 13 Power supply for crystal oscillator XTAL_N 14 Crystal oscillator input GND_XO 15 Ground XTAL_P 16 Crystal oscillator output GND_LO 17 Ground VDD_LO 18 Power supply for local oscillator GND_LO 19 Ground GND_DIG 20 Ground (digital) VDD_3VOUT 21 3 V output voltage of the 5 V to 3 V LDO VDD_5VIN 22 5 V input voltage of the 5 V to 3 V LDO VDD_DIG 23 Power supply for digital part P16 24 GPIO, wake-up, USART0, USART1 P15 25 GPIO, timer input, timer output, USART0, USART1 TXOUT [7] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 9 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 4. Pinning description...continued Symbol Pin Description P14 26 GPIO, timer output, USART0, USART1 P13 27 GPIO, USART0 P12 28 GPIO, wake-up, timer input, USART0, USART1 P11 29 GPIO, fail safe wake-up, timer input, USART0, USART1 P10 30 GPIO, fail safe wake-up, timer output, RX and TX clock output 31 Power supply for digital I/Os VDD_IO RST_N [8] 32 Reset input (active low), internal pull-up resistor MSDA [9] 33 Monitor and debug interface serial data (input/output; internal pull-up in input mode) MSCL [10] 34 Monitor and debug interface serial clock (output) P17 35 GPIO, wake-up, timer input, timer output, RX data output, TX data input, USART0, USART1 P20 36 GPIO, wake-up, timer output, USART1 P21 37 GPIO, GP ADC input NEG P22 38 GPIO, wake-up, GP ADC input POS, timer output 39 GPIO, wake-up, GP ADC reference voltage, USART1 40 Test pin (must be connected to ground in the application) 41 LDO output voltage GND_DIG 42 Ground (digital) GND_ADC 43 Ground IFN_SENSE_IN 44 Selectable ADC negative input / pin used for test purposes IFP_DCBUS 45 Selectable ADC positive input / pin used for test purposes VDD_ADC 46 Power supply for ADC in receiver chain VDD_RF 47 Power supply for receive path RF_IN_A 48 RF receiver input A (internally multiplexed with RF receiver input B) P23 TEST [1] VDD_DIGL [3], [4], [5] Notes: 1. Pin TEST must be connected to ground in the application. 2. The exposed die pad area must be connected to ground. 3. VDD_DIGL is the internal supply of the digital part and shall only be externally connected to a blocking capacitor 15 nF (nominal). 4. VDD_DIGL must neither be pulled to high voltages nor to GND. 5. Do not use VDD_DIGL to supply external devices. 6. All GND_RF are connected internally. 7. TXOUT is not to be supplied externally except for an inductor connected to VREGPA. 8. RST_N shall be connected only with a 4.7 kΩ resistor in series. 9. MSDA features an on-chip pull-up resistor to VDD_IO and may be left open or terminated to VDD_IO, as desired. 10.MSCL is an output and shall be unconnected in the application. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 10 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9 Design information 9.1 Introduction The device can be used in many applications where the flexibility of the micro-controller in combination with the dedicated receive and transmit hardware are exploited. The range of applications of such a device span from simple transmitter applications triggered by a key press to complex half duplex RF multi protocol transceivers. In order to describe the wealth of features and possibilities it is necessary to describe more detailed the key functional blocks of the device. Functions, such as power management and wake-up procedures (where the micro-controller is not controlling the process directly), permeate the complete device and are described in the coming sections. The main functions are the microcontroller subsystem, including the frequency generation system (the core of all RF functionality), the transmitter system and the receiver systems. 9.2 Power management 9.2.1 Modes of operation The device supports operation in a 3 V, 5 V or a mixed 3 V and 5 V environment supporting the following supply use cases: 1. Device and digital interface supplied with regulated 5 V supply • Digital signaling between all devices in the system is done at 5 V level. 2. Device and digital interface supplied with regulated 3 V (3.3 V) supply • Digital signaling between all devices in the system is done at 3 V (3.3 V) level. 3. Device supplied with regulated 3 V (3.3 V) supply and digital interface supplied with regulated 5 V supply • Digital signaling between all devices in the system is done at 5 V level. 4. Device and digital interface supplied with a single primary lithium battery cell (3.6 V … 1.9 V) • Digital signaling between all devices in the system is done at the unregulated battery voltage level. 5. Supply with a single rechargeable battery cell (4.2 V … 3.0 V) and an accompanied voltage regulator (3.6 V … 2.5 V) • Device is supplied with the regulated voltage. • Digital signaling between all devices in the system is done at the unregulated battery voltage level. Connection diagrams for these different use cases are depicted in Figure 4. 9.2.2 External power supply domains Several power supply pins are present to provide the required supply isolation between various RF, analogue and digital blocks (external power supply domains). The power supply pins have to be directly connected to a regulator output or a battery. External supply switches are not required. Adequate blocking capacitors have to be connected to the external supply pins. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 11 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 5. External power supply domains [1] Power supply pin Voltage range VDD_IO, GND_IO 3 V, 5 V Main power supply domain of the device; supplies the I/O port pins, the power-on reset circuit and an internal low-power regulator which supplies the power state logic, the I/O port control latches, the polling timer and the watchdog. VDD_LO, GND_LO 3V Power supply for the local oscillator (fractional-N PLL). VDD_XO, GND_XO 3V Power supply for the crystal oscillator. VDD_RF, GND_RF 3V Power supply for the radio frontend including the LNA, the input attenuators and the mixer for receive mode. VDD_PA, GND_PA 3V Power supply for the power amplifier regulator output and the power amplifier control for transmit mode. VDD_ADC, GND_ADC 3V Power supply for the sigma-delta ADCs in the radio receiver. VDD_DIG, GND_DIG 3V Power supply for the digital part. VDD_5VIN 5V Supply voltage input for the internal power regulator. This regulator generates the required supply voltage for the device’s VDD supply pins in the 3 V domains. VDD_3VOUT 3V Regulated supply voltage output of the internal power regulator. [1] Description Voltage ranges are given here only for information purpose. Please refer to the electrical characteristics for detailed voltage range specification. The external power supply domains with the associated power supply pins are briefly described in the Table 5. The package HVQFN has an exposed die pad at the back which is intended as heat sink and additional ground connection. The device includes an internal power regulator which can be used to generate a voltage less than 3.6 V when such a voltage is not available. This regulator utilizes the two supply pins VDD_5VIN and VDD_3VOUT. The regulator is only on if the device is in power supply state ACTIVE. In all other power supply states the regulator is off. VDD_5VIN can be supplied permanently and the input voltage must be greater than 3.6 V. The application has to ensure that the current drawn from the internal power regulator does not exceed the maximum limit given in the section electrical characteristics. If this limit is exceeded all supply voltage pins in the 3 V domain must be connected to an external voltage regulator. It is not allowed to supply parts of the device with the internal and other ones with an external 3 V supply. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 12 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Regulator: 5V VDD_IO Internally generated 3V VDD_5VIN VDD_3VOUT VDD_LO VDD_RF VDD_ADC VDD_PA VDD_DIG VDD_3VOUT VDD_LO VDD_RF VDD_ADC VDD_PA VDD_DIG VDD_3VOUT VDD_LO VDD_RF VDD_ADC VDD_PA VDD_DIG VDD_RF VDD_ADC VDD_PA VDD_DIG Regulator: 3V or 3.3V or Battery: 1.9 … 3.6V VDD_IO VDD_5VIN Regulator: 3V or 3.3V Regulator: 5V VDD_IO VDD_5VIN Rechargeable battery: 3.0 … 4.2V 2.7 … 3.6V REGULATOR VDD_IO VDD_5VIN VDD_3VOUT VDD_LO Figure 4. Connection of external power supply domains for different power supply use cases 9.2.3 Recommended external capacitors in the supply domains • The device is supplied by an external supply with 3 V or 3.3 V: – Pin 21 VDD_3VOUT: open, not connected – Pin 22 VDD_5VIN: connected to GND – Pin 31 VDD_IO: 10 nF (±20%) capacitor – Pin 41 VDD_DIGL: 15 nF (±20%) capacitor (mandatory) – Pin 47 VDD_RF: 10 nF (±20%) capacitor – Pin 12 VDD_PA: 10 nF (±20%) capacitor – Pin 23 VDD_DIG: 10 nF (±20%) capacitor – Pin 18 VDD_LO: 22 nF (±20%) capacitor – Pin 13 VDD_XO: 68 nF (±20%) capacitor – Pin 46 VDD_ADC: 10 nF (±20%) capacitor OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 13 / 75 OL2385 NXP Semiconductors Industrial RF transceiver • The device is supplied by an external supply with 5 V and the internal 5 V to 3 V regulator is used: – Pin 21 VDD_3VOUT: 10 nF capacitor (±20%) – Pin 22 VDD_5VIN: connected to external 5 V supply, 100 nF (±20%) capacitor plus optional 2.2 µF capacitor – Pin 31 VDD_IO: 10 nF (±20%) capacitor – Pin 41 VDD_DIGL: 15 nF (±20%) capacitor (mandatory) – Pin 47 VDD_RF: 10 nF (±20%) capacitor – Pin 12 VDD_PA: 10 nF (±20%) capacitor – Pin 23 VDD_DIG: 10 nF (±20%) capacitor – Pin 18 VDD_LO: 22 nF (±20%) capacitor – Pin 13 VDD_XO: 68 nF (±20%) capacitor – Pin 46 VDD_ADC: 10 nF (±20%) capacitor 9.2.4 Power supply states The device supports four different power states: • • • • RESET state POWER-OFF state ACTIVE state STANDBY state The state diagram for the functional power supply states is given in Figure 5: OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 14 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figure 5. Power supply state diagram 9.3 Local oscillator The radio frequencies needed for reception and transmission are created using a local oscillator. The signals for the reference namely crystal oscillator, mixer signals and the mixer phases for both transmission and reception are generated here. The purity, stability, and matching of these signals define the maximum performance that can be achieved by the RF system. Therefore, the blocks are optimized for these performance parameters. The choice of the architecture of the Fractional-N_PLL and that of the voltage controlled oscillator (VCO) guarantees highest performance and flexibility with the minimum of current consumption. The transmission of FSK is achieved by modulation of the PLL and therefore the loop filter supports a high bandwidth to allow data rates up to 400 kbit/s. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 15 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figure 6. Local Oscillator 9.4 UHF transmitter subsystem 9.4.1 General description The UHF transmitter consists of a modulator block for narrow band FSK and ASK, which controls the PLL to generate the RF signal and two power amplifier blocks. A 12 dBm PA block, which is able to deliver +14 dBm output power, and a 0 dBm block to save power. The modulation is digitally controlled, either directly to the power amplifier regulator for ASK and power ramping, or via the main LO by controlling the fractional divider to generate FSK modulation in the LO. • • • • • OL2385 Product data sheet COMPANY PUBLIC TX Modulator for ASK and FSK High current regulator with fast response Power amplifier delivering 14 dBm max. Power amplifier switchable to deliver 0 dBm max. Power can be regulated in 0.25 dB steps All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 16 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figure 7. Radio transmitter system 9.4.2 TRX switch The TRX switch is a fully featured RF switch used to optimize the component count on the application boards. Many system require a software controlled RF switch function to select between antennas and auxiliary inputs. Although the circuit has two dedicated RF inputs the flexibility in combining the RX and TX paths after the relevant RF matching adds real benefit for the product. 9.4.2.1 Features • • • • 50 Ohm low loss paths from TX to Antenna 50 Ohm low loss path RX to antenna High isolation when switch is open Save external components TRXSWITCH_TX TRXSWITCH_ANT TRXSWITCH_RX Bias Generator Figure 8. Transmit receive switch OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 17 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9.5 UHF receiver subsystem The UHF receiver subsystem consists of a low IF RF down conversion system. With low gain in the RF and a high resolution ADC used in the baseband to provide the necessary dynamic range. The system includes a low noise figure and high linearity LNA stage, supported by passive attenuator blocks controlled by an AGC loop. Down conversion and high gain baseband amplifiers ensure that the dynamic range of the ADC is exploited fully. The digital receiver front-end includes the preprocessing and I/Q compensation. The digital receive chain performs the channel selection, demodulation and framing. The complete system is shown in Figure 9. Figure 9. UHF receiver subsystem 9.5.1 Features • • • • • • • • • • • RX Antenna switch with 2 inputs Wide band receiver for carrier frequencies in the range of 158 to 960 MHz Low noise figure: 5 dB typically @ 434 MHz Digitally controlled automatic gain control – 18 attenuation steps of 2 dB at RF input – 15 attenuation steps of 2 dB at mixer input IQ down conversion - high phase accuracy IF bandwidth with +/-400 kHz (3 dB) RF and IF level detectors for AGC loop Programmable bias for amplifier stages DC offset correction in the baseband Digital IF preprocessing Narrow band receive chain with DMA 9.5.2 Antenna switch In order to have the possibility to use the device at more than one frequency band or in an antenna diversity application, an integrated antenna switch is implemented. 9.5.3 LNA The LNA is a wide-band inductor-free, highly-linear, low-power and low-noise amplifier. The LNA uses internal feedback for obtaining its high linearity and a well defined gain as well as good input matching over temperature and voltage. The LNA has a single-ended input with a wide-band input matching optimized for 200 Ohms. A current reuse scheme is employed to maintain maximum performance with minimum current consumption. Power consumption is controllable depending on the demands of the system. The OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 18 / 75 OL2385 NXP Semiconductors Industrial RF transceiver advanced feedback structure in combination with the attenuator set-up results in very low LO radiation. 9.5.4 Attenuators Passive 2 dB step attenuators are positioned in front of the LNA and in front of the mixer in order to control the gain of the receiver. The RF inputs have integrated ESD protection and integrated AC coupling for easy application. A matching network can be applied offchip for best performance and adaptation to different source impedances. 9.5.5 Mixer The mixer multiplies the single-ended RF signal with a balanced quadrature (I and Q) LO signal in order to differentiate between the wanted and image channel. A special algorithm is used to remove the impact of analog mismatch on the image rejection. This usually leads to intrusion (leakage) of the image channel into the wanted channel. 9.5.6 Baseband amplifier (TIA) and DC offset compensation The baseband amplifier stage (TIA - transimpedance amplifier) amplifies the balanced quadrature (I and Q) mixer output signals to the optimal level for the ADC and performs the anti-aliasing filtering in front of the sigma-delta ADC. Internal DC offset correction loops guarantee maximum image suppression and high linearity and dynamic range. 9.5.7 SD ADC The SD ADC is a 1-bit higher order oversampled sigma-delta ADC with very low current consumption. The sigma delta switched time core makes use of the most modern feedback techniques to ensure stability and performance over a wide frequency band, process and temperature variation. It features fast auto-calibration for optimum performance. The calibration time is typically below 1 µs. The output is a single bit data-stream which is further processed by the digital baseband. 9.5.8 Digital receiver block diagram Figure 10. Digital receiver block diagram 9.5.9 Digital IF preprocessing OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 19 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9.5.9.1 Features • Decimation filter • DC notch filter with optional bypass • IQ mismatch compensation with optional bypass The IF prefilter blocks perform sampling rate reduction from the highly oversampled 1-bit sigma delta bit stream into a Nyquist sampling multi bit signal. Furthermore the decimated signal is high pass filtered to remove unwanted DC components which could disturb further processing in the IQ compensation unit. The IQ compensation unit removes the unwanted image frequency components from the complex low IF signal. 9.5.9.2 Block diagram Figure 11. Digital receiver front-end 9.5.9.3 Description The IF prefilter block has a dedicated enable bit field which allows power saving in case the receiver is not enabled at all. Due to the tuner design, the resulting spectral view at the intermediate frequency is inverted (higher frequencies are mapped to lower and vice versa). In order to compensate that, it is possible to swap the I and Q components. If the IQ swap is enabled, the frequency order at IF is matching to the RF. 9.5.10 Automatic gain control 9.5.10.1 Features • Highly programmable for best flexibility • 2 dB gain steps • Automatic or manual mode OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 20 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9.5.10.2 Block diagram Figure 12. AGC block diagram 9.5.10.3 Description The automatic gain control (AGC) ensures that the analog front-end is protected from high power signals and therefore ensures high linearity figures throughout the whole dynamic range of the receiver. The AGC can work in manual or automatic gain control mode. The manual mode is intended for debugging system level use cases and for device test. In automatic mode the AGC measures signal strength, makes a decision to get the best performance and drives the gain of the analogue front-end. For measuring signal strength pairs of underload and overload peak detectors are present at the LNA and at the TIA. The detectors are fast-response voltage comparators checking if the signal envelope belong to the range specified by the underload and overload threshold values. The AGC control strategy has been optimized for providing the best noise figure and maintaining all linearity requirements. Therefore the first steps of the attenuation are always done with the baseband (TIA) attenuator. The next steps are done with the front-end (LNA) attenuator until it has reached its maximum attenuation. The remaining attenuation steps are done with the baseband attenuator again. The attenuation level at which attenuation control is given from the baseband to the front-end attenuator (takeover threshold) can be modified by software. The control strategy has been presented on the attenuation distribution figure below. It shows how the attenuation sum AS is distributed between front-end AFE and baseband ABB attenuations with regards to the requested attenuation AR. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 21 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figure 13. Attenuation Distribution 9.5.11 Narrow band receive chain 9.5.11.1 Features • • • • • • • • • • OL2385 Product data sheet COMPANY PUBLIC Complex IF channel mixer (-400kHz to +400kHz) AGC compensation (for RSSI correction) Configurable channel filter (4 kHz to 360kHz) FSK and ASK demodulator with configurable data filter RSSI and offset frequency detector/measurement Clock and data recovery for ASK and FSK Manchester encoded data (high data rate offset up to 12%) Manchester receiver for ASK and FSK Manchester encoded data (high data rate offset up to 12%) NRZ receiver for NRZ data for 2FSK, 4FSK and 8FSK Signal monitors (signal property checks) Data processing unit with DMA interface All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 22 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figure 14. RX chain/channel block diagram 9.5.12 Data processing The data processing block combines the functions of data recognition and packet building for valid data sequences and accommodates the transfer to the memory of the device. There are many functional blocks which work together to carry out this function. 9.5.12.1 Features • Data processing core – Line decoder – Pattern matching unit – Signal monitors (code properties) • Data counter • Timer • Receive state machine • Interrupt generation and status flags • Micro-controller interface with direct memory access (DMA) channel The data processing sub units are enabled by the main state machine automatically on demand. Two different receive algorithms can be selected. The Manchester receiver is optimized for line coded data (e.g. Manchester, Biphase Mark Code) and supports high data rate offsets. The NRZ receiver is optimized for NRZ data and supports higher-order modulation (2FSK, 4FSK, 8FSK). Signal monitors can be used to minimize the likelihood of a false synchronization in noise (i.e. false alarm rate). The following signal monitors can be used for the Manchester receiver: modulation present detector, RSSI measurement, data rate checker, FSK deviation checker, CDR PLL lock detector, gap detector The following signal monitors can be used for the NRZ receiver: modulation present detector, RSSI measurement, FSK deviation checker. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 23 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9.6 Micro-controller subsystem The digital control of the device is done with a RISC micro controller (uC) designed for low power and high performance applications. The uC has optimized peripherals to facilitate quick and efficient control of the radio frequency blocks as well as having multiple peripherals for interfacing the device to the external application. Timers and mathematical units are also implemented in hardware to allow the uC to concentrate upon the main application level challenges. Such activities as data recognition and data movement are carried out with specific blocks thus increasing the computing power available for the user application. The core uC is discussed in detail in a separate document but the interaction as concerns this specific device and moreover the peripherals are discussed in depth here. 9.6.1 RISC controller The device is powered by NXP's 3rd generation low power 16-Bit Extended Micro RISC Kernel (MRK ΙΙΙe), which controls device operation in ACTIVE state. The MRK ΙΙΙe utilizes a Harvard architecture featuring a 16 bit ALU. The instruction set supports 8 bit and 16 bit operations and is optimized for C programming. Additionally to all commands supported by the standard MRK ΙΙΙ, MRK ΙΙΙe supports an extended instruction set with hardware supported multiplication and division as well as efficient bit field modification operations. Details about the MRK III controller including full instruction set description are found in [1]. Due to the efficient 2-stage pipeline (fetch / execute), most instructions execute in a single machine cycle (four clock cycles), resulting in ultra low power consumption. The device provides 64 kByte of linear data address range and 128 kByte linear code address range, powerful addressing modes and high code density. Besides, the MRK ΙΙΙe supports a power saving mode and code/data protection mechanisms (privilege modes). 9.6.2 System clock 9.6.2.1 Clock sources The following clock sources are available: • Crystal oscillator clock, XOCLK, 27.6 MHz or 55.2 MHz – Clock source for system clock, PLL synthesizer, Sigma-Delta ADC • Main RC oscillator clock, MRCCLK, nominal 25.5 MHz – Clock source for system clock • Sampling clock of the Sigma-Delta ADC, FSCLK, 27.6 MHz – Clock source for system clock, RX subsystem • Low-power RC oscillator, LPRCCLK, nominal 180 kHz – Clock source for polling timer and watchdog • Digitally calibrated divided clock output, PTCLK, nominal 16 kHz OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 24 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figure 15. Clock distribution overview 9.6.3 Direct Memory Access The device supports direct memory access channels for different peripherals to unload the CPU from simple data copying tasks between the peripherals and the data memory. Besides these DMA channels the device also supports one general purpose DMA channel for block data transfer between any two data memory ranges. 9.6.4 Interrupt system The device contains an interrupt controller featuring 10 hardware interrupt priority levels. If more than one hardware interrupt request is pending at the same time the source with the highest request level is selected. The application can switch dynamically between single or nested interrupt execution and whether a selected event causes an interrupt or a wake-up event. If an interrupt is enabled, it causes the RISC controller to perform a CALL operation to the interrupt vector address, where execution of the Interrupt Service Routine (ISR) starts. User interrupts are usually disabled during the execution of system code (SYS instructions). In this case any interrupt request is latched and execution is delayed until control is returned to the application code. Please note that the system is basically able to allow user interrupts also during execution of system code. Any system call using this feature will describe this behavior explicitly. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 25 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9.6.5 I/O ports The device incorporates two quasi-identical I/O port structures—port 1 and port 2—with in total 12 independently configurable bidirectional pins. The I/O pins provide alternative port functions with individual control. All I/O ports provide wake-up function and all but two have a battery buffered configurable wake-up edge selection (falling/rising) and wake-up disabling function. Port 1 consists of 8 I/O pins, that serve the function to control external peripherals and that are used as button inputs (wake-up). Port 2 comprises 4 I/O pins, providing additional button inputs as well as various extended functions. 9.6.6 Timer/Counter 0, 2 Timer/Counter 0 and Timer/Counter 2 are identical. The following description takes Timer/Counter 0 as reference. All descriptions are also valid for Timer/Counter 2 if T0 is replaced by T2 in names and figures. Timer/Counter 0 is a 16 bit timer/counter with 12 bit prescaler and can be operated as interval and event counter, as digital modulator or as clock divider. 9.6.7 Timer/Counter 1 Timer 1 is an 8/16 bit timer with 12 bit prescaler and is intended as interval and event counter for general purpose applications, as demodulator or signal generator and modulator. Together with Timer 0 it can be used as versatile clock measurement and/or trimming unit. 9.6.8 Timer 3 and RX chain timers Timer 3 is a general purpose timer. The receiver chain has an embedded timer of type Timer 3 which is called RX chain timer. The RX chain timer is connected with RX state machine and can generate timeout events. It can be used for example to detect that a frame has not been received during an expected time window. 9.6.9 Polling and wake-up timer Features: • Wake-up generation from POWER-OFF or STANDBY state • Uses crystal calibrated divided low-power RC oscillator as clock source • Configurable wake-up time generation from 1/16 ms to 65536 ms with 1/16 ms resolution • Interrupt generation on wake-up time match • Update of wake-up time from last device wake-up or from current time • Polling timer register can be used as timestamp • Interrupt generation on polling timer register overflow The polling and wake-up timer can be used to terminate the POWER-OFF or STANDBY state after a predefined time but it can be also used in ACTIVE state to generate additional timer intervals. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 26 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9.6.10 Watchdog timer Features: • • • • • • • Watchdog timer running in ACTIVE, STANDBY and POWER-OFF state 1 Generates device reset, if not properly cleared by the application Uses crystal calibrated divided low-power RC oscillator as clock source Configurable wake-up time generation from 16 to 65536 ms in 13 steps Window watchdog operation with 25%, 50%, 75%, 100% clearing window Supports watchdog timer reset flag to detect watchdog overflow by the application Non-maskable watchdog timer interrupt instead of reset for devices in INIT mode The device incorporates a watchdog timer to recover the system from application program deadlocks. The watchdog timer runs continuously in ACTIVE state, STANDBY state and POWER-OFF state 1 whereas it is off in RESET state and POWER-OFF state 2. 9.6.11 USART The USART is a universal synchronous and asynchronous receiver and transmitter featuring SPI, UART and LIN compatible UART operation. The device contains two identical USARTs denoted as USART0 and USART1. In the register description USART0 or USART1 must be used instead of the prefix USART. 9.6.11.1 Features: • Integer and fractional baud rate generator • Large range of selectable baud rates • Two separate DMA channels for receive and transmit data 9.6.11.1.1 SPI • • • • • • • Synchronous SPI operation SPI master and slave mode SPI clock polarity and clock phase selection SPI full and half duplex operation Configurable data length from 1 to 16 bits SPI mode fault and slave abort fault detection Hardware supported clock absent detection in slave mode to identify stalled SPI slave operation (4 … 255 bits) • Full synchronous design, oversampling rate = 6, 8, 10 or 16 • SPI Stop bit to stop an ongoing SPI data transfer 9.6.11.1.2 UART • • • • • • • • OL2385 Product data sheet COMPANY PUBLIC Asynchronous UART operation Configurable parity generation (no, odd, even, sticky 0 or 1) and parity check 1 or 2 stop bits Configurable data length from 1 to 16 bits Full duplex and half duplex UART operation Half duplex operation with combined TRXD pin or separate RXD and TXD pin Half duplex operation with optional bit collision detection Optional selection to abort or continue transmission upon collision detection All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 27 / 75 OL2385 NXP Semiconductors Industrial RF transceiver • LIN compatible break detection mechanism on RXD line with configurable time-out window (4 … 255 bits) • Frame error detection • ISO7816 compatible operation mode • Optional inversion of data bit 9.6.12 Registers for mathematical-logical operations 9.6.12.1 CRC register Features: • • • • Configurable CRC polynomial from CRC1 to CRC16 Configurable CRC start value Parallel CRC calculation for 1 to 8 bit input data Support for LSBit/MSBit first and right/left aligned input data The CRC register is intended for CRC generation and CRC checking tasks. It consists of a 16 bit CRC data register CRC_DAT and a configurable CRC polynomial, which can be set via register CRC_POLY. 9.6.12.2 CRC32 register Features: • • • • Configurable CRC polynomial from CRC1 to CRC32 Configurable CRC start value Parallel CRC calculation for 8 bit input data Support for LSBit/MSBit first aligned input data The CRC register is intended for CRC generation and CRC checking tasks. It consists of a 32 bit CRC data register and a configurable CRC polynomial. 9.6.13 Analog-to-digital converter (ADC) The ADC is a 10 bit successive approximation analog to digital converter using charge redistribution techniques to achieve very low power consumption but also a high data conversion rate. Features: • • • • • • • • • 10 bit A-D conversion Selection between four input channels Selection between four reference voltages Power efficient and area saving switched capacitor charge tank Typical A-D conversion time of 37 µs Dynamic range up to the maximal supply level VDD_DIG Ratiometric measurement possible End-of-conversion and Data overflow flagging Interrupt generation for End-of-conversion The ADC is configured and the resulting data can be read out via bit fields. It does not include multiple data buffering. Thus if previous conversion data was not read when a OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 28 / 75 OL2385 NXP Semiconductors Industrial RF transceiver subsequent conversion is finished previous data will be overwritten which is flagged with an overflow flag. 9.6.14 Temperature measurement The temperature can be measured in two ways, either with the internal temperature sensor or using an external temperature sensor, connected to the on-chip 10 bit ADC. 9.6.14.1 External temperature measurement An external temperature sensor can be used, connected as shown in Figure 16, with connections made to pins P21, P22 and P23. The temperature measurement uses the calibration value for R2 stored in the variable ADC_R2 in EROM. The resistance value RT of the external temperature sensor is calculated according to the following equation. The temperature can then be derived from the resistance value. Figure 16. External temperature sensor measurement OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 29 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 9.7 Device modes The device features the following Device Modes: • • • • INIT PROTECTED TAMPERED VIRGIN The Device Modes affect the overall device behavior, the Monitor and Download Interface operation and the user ability to access the EROM. A Device Mode is controlled by a set of configuration bytes, which are located in the EROM. The configuration bytes may not be altered by the user directly, instead, the corresponding Monitor and Download command has to be used. 9.7.1 INIT When the device is supplied from NXP, it is configured in INIT mode by default. The INIT mode shall be used during software development only. The Monitor and Download Interface is fully operational, enabling the customer to initialize the EROM as desired for the application. To protect the EROM from readout and to disable the debug features, the device shall be forced into PROTECTED mode. Leaving the device in INIT mode may cause the device to execute a software break, in case a corresponding debug command is received at pin MSDA. This would terminate execution of the application program and would call the built-in debug program. In this case, execution of the application program is interrupted until a proper debug command is issued or a device reset is applied. 9.7.2 PROTECTED In the moment the device is set into PROTECTED mode, the EROM is protected against altering and readout via the Monitor and Download Interface, and the debug features are disabled. The PROTECTED mode has to be used during system testing and in the final application. The device may be forced into INIT mode again by issuing a corresponding command via the Monitor and Download Interface. This command sets the EROM to a predefined state before the INIT mode is resumed. Hence, the EROM based application program is discarded. In case this sequence does not complete successfully, the device enters TAMPERED mode. 9.7.3 TAMPERED The TAMPERED mode is entered temporarily during the sequence that forces the device from PROTECTED mode back into INIT mode. If this sequence does not complete successfully, the TAMPERED mode is entered. The device may be forced into INIT mode by again issuing a corresponding command via the Monitor and Download Interface. This command sets the EROM to a predefined state first, before the INIT mode is resumed. Hence, the EROM based application program is OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 30 / 75 OL2385 NXP Semiconductors Industrial RF transceiver discarded. In case this sequence does not complete successfully, the device remains in TAMPERED mode until a new attempt is made. 9.7.4 VIRGIN After manufacturing, the device operates in VIRGIN mode, enabling extended device test and device configuration. Finally, NXP forces the device into INIT mode and the VIRGIN mode is irreversibly locked in order to ensure it cannot be activated again. 9.8 System routines 9.8.1 Boot routine The ROM based boot routine is called immediately after a device reset or a wake-up from any POWER-OFF state. This event is referred to as cold boot. The boot routine executes a sequence of instructions to evaluate the device mode and configures the device, using device protection and configuration flags and passes control to the application code at the warm boot vector in EROM. The boot routine does not change the information and the bit fields about the wake-up events initiated by pressed buttons, polling timer or reset source. 9.8.2 Monitor and download interface The in-circuit Monitor and Download Interface is intended for non intrusive debug operation during application program development. The interface allows manipulating the embedded peripherals and provides means to initialize the EROM. It is implemented as two-wire serial interface using the dedicated pins MSDA and MSCL. The EROM has a programming granularity of 64 byte. The Monitor and Download Interface provides a 16 Bit Real Time Monitor containing Watches. Besides several HW/SW Break Points and single step operation, the interface contains an HW accelerator and allows autonomous operation. The majority of the features provided by the Monitor and Download Interface are available only, if the device is set into INIT mode, which is the factory default setting. When performing system tests and field trials, the device shall be set to PROTECTED mode. Latter one locks the EROM content, protecting it against alteration and read out, as well as disables the debug features. The device may be forced back into INIT mode by a dedicated monitor command, which will set the EROM to a predefined state. A detailed description about the operation and the command set of the Monitor and Download interface is given in [3]. 9.8.3 Hardware abstraction layer The device features functions located in ROM which are accessible using system calls. These are grouped in: • • • • • OL2385 Product data sheet COMPANY PUBLIC Retrieving the version number of the device and its related firmware module versions. Debug functions which send customer defined data using the MDI interface Control of dedicated system debug functionality EROM programming function Low power functions to enable low power modes All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 31 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Additionally, an EROM software library is available helping to control all hardware blocks. This can be seen as guidance and can be fully modified. The detailed information is available in a separate document. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 32 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 10 Characterization information 10.1 Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134) Parameter Condition Min Storage temperature range -55 Junction temperature Typ Max Unit 150 °C 150 °C VDD_5VIN; VDD_IO; Voltage at any digital I/O pin -0.3 5.5 V Voltage at digital I/O pins (5.5 V must not be exceeded) -0.3 VDD_IO + 0.3 V -0.3 3.6 V 0.1 V VDD_DIG; VDD_RF; VDD_XO; VDD_LO; VDD_ADC; VDD_PA Must not exceed VDD_IO Voltage difference between any of the following voltages: VDD_DIG; VDD_RF; VDD_XO; VDD_LO; VDD_ADC; VDD_PA VREGPA -0.3 2.0 V TXOUT -0.3 3.6 V VDD_DIGL -0.3 1.95 V XTAL_N; XTAL_P -0.3 1.95 V IFN_SENSE_IN; IFP_DCBUS -0.3 VDD_ADC V RF_IN_A; RF_IN_B; TRXSWITCH_ RX; TRXSWITCH_ANT; TRXSWITCH_TX -0.3 VDD_RF V 10 dBm Maximum RX input level without damage EROM data retention EROM write endurance [1] [1] AEC-Q100-005 measurement method with mission profile as follows: 6% @ -40 °C 20 % @ 30 °C 65 % @ 85 °C 5% @ 100 °C 4% @ 125 °C 15 Years Tamb = 25 °C 10k cycles The activation energy equals 0.15 eV. According to Arrhennius' Law, the number of useful cycles at 25 °C is about 2.6 times higher than at 85 °C and about 4.3 times higher than at 125 °C. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 33 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 10.2 Recommended operating conditions Table 7. Recommended operating conditions Parameter Condition Min Typ Max Unit Parametric ambient temperature Unless otherwise specified -40 25 85 °C Supply voltage range 1A All specification parameters fulfilled 2.5 3 3.6 V Supply voltage range 1B Device fully functional; deviating RX and 1.9 TX characteristics 2.5 V Supply voltage range 2 Only on VDD_5VIN and VDD_IO. Full performance and IO operation on nominal 5 V supply 5.5 V 4.5 5 10.3 Characteristics Table 8. RX Characteristics - General Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz, crystal = 27.6 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description 1 Frequency band 169 MHz 2 Max Unit Note 165 172 MHz [1] Frequency band 315 MHz 310 320 MHz [1] 3 Frequency band 410 MHz 410 424 MHz [1] 4 Frequency band 426/429/434/447 MHz 425 450 MHz [1] 5 Frequency band 868 MHz 863 876 MHz [1] 6 Frequency band 915 MHz 902 928 MHz [1] 7 Frequency band 950 MHz 928 960 MHz [1] 8 Frequency Step Size Hz [4] 9 Data latency Manchester / NRZ Min. at 2.4 kchip/s and 10 kHz channel filter BW Max. at 225 kchip/s and 300 kHz channel filter BW 6.5 Chip [4] 10 Sensitivity variation over baud rate deviation Baud rate deviation ±1 %. Data rate 50 kbit/s, channel filter BW = 300 kHz 0.1 3 dB [4] 11 Sensitivity variation over baud rate deviation Baud rate deviation ±10 %. Data rate 50 kbit/s, channel filter BW = 300 kHz 1.5 3 dB [4] 12 Maximum input level for reception FER 10 % 5 10 dBm [4] 13 Dynamic range of input FER 10 % Channel filter BW = 10 kHz 125 130 dB [4] 14 FSK sensitivity variation over temperature -40 °C to 85 °C 2 dB [4] OL2385 Product data sheet COMPANY PUBLIC Conditions Min Typ 53 1.5 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 34 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 8. RX Characteristics - General...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz, crystal = 27.6 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 15 FSK sensitivity variation over supply voltage 2.5 V to 3.6 V 16 FSK sensitivity variation over supply voltage 1.9 V to 3.6 V Min Typ Max Unit Note 0.3 dB [4] 1 dB [4] Table 9. RX Characteristics - manchester receiver Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description 1 Typ Max Unit Note FSK sensitivity at input (FER 10 %) Manchester data rate = 50 kbit/s, deviation = ±100 kHz, channel filter BW = 300 kHz -103 -101 dBm [5] 2 ASK sensitivity at input (FER 10 %) Manchester data rate = 0.6 kbit/s, channel filter BW = 10 kHz. Peak envelope power ASK -120 -117 dBm [5] 3 ASK sensitivity at input (FER 10 %) Manchester data rate = 1.2 kbit/s, channel filter BW = 20 kHz. Peak envelope power ASK -118 -115 dBm [5] 4 ASK sensitivity at input (FER 10 %) Manchester data rate = 2.4 kbit/s, channel filter BW = 50 kHz. Peak envelope power ASK -114 -111 dBm [5] 5 ASK sensitivity at input (FER 10 %) Manchester data rate = 4.8 kbit/s, channel filter BW = 50 kHz. Peak envelope power ASK -112 -110 dBm [5] OL2385 Product data sheet COMPANY PUBLIC Conditions Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 35 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 9. RX Characteristics - manchester receiver...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min 6 Image frequency suppression without calibration RSSI at wanted frequency minus RSSI at image frequency 7 Image frequency suppression with calibration (internal tone) at desired temperature / frequency RSSI at wanted frequency minus RSSI at image frequency 8 Image frequency suppression with calibration (external tone) at desired frequency and 25 °C RSSI at wanted frequency minus RSSI at image frequency 9 Spurious emission in RX mode: 9 kHz to 1 GHz Conducted measurement at 50 Ohm reference board -82 10 Spurious emission in RX mode: 1 GHz to 4 GHz Conducted measurement at 50 Ohm reference board -78 46 Typ Max Unit Note 45 dB [5] 67 dB [1] 72 dB [5] -70 dBm [5] -70 dBm [5] Table 10. RX Characteristics - manchester receiver Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 11 Spurious emission in RX mode within signal band in use Conducted measurement at 50 Ohm reference board -83 12 Leakage LO Tuned LO frequency. Conducted 50 Ohm 13 Leakage VCO Tuned to VCO frequency. Conducted 50 Ohm 14 RSSI tolerance One point calibration at -60 dBm, -120dBm to 0dBm, channel filter BW = 10 kHz 15 RSSI variance over temperature 16 RSSI variance over voltage 17 Current consumption in STANDBY state OL2385 Product data sheet COMPANY PUBLIC Min Typ Unit Note -70 dBm [1] -83 -78 dBm [1] -70 -63 dBm [1] 3 dB [5] 0.3 dB [5] 1.9 V to 3.6 V 0.1 dB [5] -40 °C 3 20 μA [1] 25 °C 4 20 μA [1] 85 °C 12 25 μA [1] -3 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 Max © NXP B.V. 2021. All rights reserved. 36 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 10. RX Characteristics - manchester receiver...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description 18 Current consumption in POWER- -40 °C OFF 2 state (polling timer and 25 °C watchdog timer off) 85 °C 0.6 Current consumption in POWER- -40 °C OFF 1 state (polling timer and 25 °C watchdog timer on) 85 °C 19 20 Current consumption in RESET state Conditions Unit Note 1.5 μA [1] 0.6 1.5 μA [1] 2.5 5 μA [1] 2 5 μA [1] 2 5 μA [1] 3 6 μA [1] -40 °C 46 60 μA [1] 25 °C 52 60 μA [1] 85 °C 58 70 μA [1] 450 600 μA [2] -40 °C 1.9 2.2 mA [2] 25 °C 2.0 2.5 mA [2] 85 °C 2.2 2.8 mA [2] -40 °C 1.3 1.6 mA [2] 25 °C 1.5 1.8 mA [2] 85 °C 1.7 2 mA [2] 21 Current consumption XTAL oscillator NDK XTAL NX3225SA 22 Current consumption in ACTIVE state XTAL clock; System clock divided by 2 to be used. EROM execution 23 Current consumption in ACTIVE state Min Typ Max RC clock; System clock divided by 2 to be used. EROM execution 24 Delta of current consumption in EROM execution ACTIVE state using system clock instead of system clock divided by 2. 0.1 mA [2] 25 Delta of current consumption in ACTIVE state using system clock divided by 4 EROM execution -0.1 mA [2] 26 Current Consumption in idle mode CPU idle; XTAL clock; System clock divided by 2 to be used. EROM execution OL2385 Product data sheet COMPANY PUBLIC -40 °C 2 2.2 mA [2] 25 °C 2 2.4 mA [2] 85 °C 2.2 2.6 mA [2] All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 37 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 10. RX Characteristics - manchester receiver...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 27 Current Consumption in idle CPU idle; RC clock; System clock divided by 2 to be used. EROM execution Min Typ Max Unit Note -40 °C 1.0 1.3 mA [2] 25 °C 1.2 1.5 mA [2] 85 °C 1.4 1.7 mA [2] 28 Delta of current consumption in IDLE mode using system clock instead of the system clock divided by 2. EROM execution 0.4 mA [2] 29 Delta of current consumption in IDLE mode using system clock instead of the system clock divided by 4. EROM execution 0.2 mA [2] 30 Receiver supply current for single channel Channel filter BW = 10 kHz ACTIVE state; System clock divided by 2 to be used. EROM execution 31 Receiver supply current for single channel Channel filter BW = 300 kHz -40°C 10 10.5 mA [2] 25 °C 10.5 11.5 mA [2] 85 °C 11.5 12 mA [2] -40°C 8.9 11.5 mA [2] 25 °C 9.5 11.5 mA [2] 85 °C 10.1 12 mA [2] ACTIVE state; System clock divided by 2 to be used. EROM execution 32 Analog start-up time from XTAL on to RX ready From crystal regulator active to RX ready; NDK XTAL NX3225SA 270 450 µs [2] 33 XTAL start-up time From crystal regulator active to XTAL ready; NDK XTAL NX3225SA 150 200 µs [2] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 38 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 11. Characteristics - manchester receiver (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description 34 Time from power supply activation to start of EROM execution 35 Time from ACTIVE state to STANDBY state 36 37 38 Unit Note 1200 µs [2] System clock to be used. 23 µs [2] Time from STANDBY state to ACTIVE state System clock is used. 230 µs [2] Temperature sensor tolerance Calibrated at 30 °C. °C [2] V [1] Internal 5 V regulator output voltage available at VDD_ 3VOUT Conditions Min -40 °C to 85 °C -4 VDD_5VIN = 5 V, 35 mA load current 2.5 Typ Max 4 3.1 Table 12. RX Characteristics - Wireless MBUS mode S Following characteristics are valid for conditions as follows (unless otherwise specified): 2FSK modulation, frequency. deviation= 50kHz, manchester code, datarate = 32.768 kChip/s, Channel filter bandwidth = 360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHzTamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -108 -100 dBm [2] Co-channel rejection FSK jammer - same modulation as wanted. 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel separation = 600 kHz, Channel filter BW = 360 kHz, jammer same modulation as wanted 45 50 dB [5] 5 Adjacent channel rejection Channel separation = 50 600 kHz, Channel filter BW = 360 kHz, jammer modulation CW 55 dB [5] 6 Blocking 2 MHz 55 60 dB [5] 7 Blocking 2 MHz (LBT) 55 60 dB [5] 8 Blocking 6 MHz 60 65 dB [5] 9 Blocking 10 MHz 65 70 dB [5] 10 Blocking 10 MHz (LBT) 65 70 dB [5] 11 Blocking 20 MHz 70 75 dB [5] 12 Current consumption System clock to be used. mA [2] OL2385 Product data sheet COMPANY PUBLIC Min 12 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 13 © NXP B.V. 2021. All rights reserved. 39 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 12. RX Characteristics - Wireless MBUS mode S...continued Following characteristics are valid for conditions as follows (unless otherwise specified): 2FSK modulation, frequency. deviation= 50kHz, manchester code, datarate = 32.768 kChip/s, Channel filter bandwidth = 360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHzTamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 13 Current consumption 14 Current consumption Min Typ Max Unit Note System clock divided by 2 to be used. 11 13 mA [2] System clock divided by 4 to be used. 11 12 mA [2] Table 13. RX Characteristics - Wireless MBUS mode T1 (meter to other device) Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, frequency deviation = 50kHz, 3 out of 6 code, data-rate = 100 kChips/s, Channel filter bandwidth = 360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -105 -100 dBm [2] Co-channel rejection FSK jammer - same modulation as wanted. 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel separation = 600 kHz, Channel filter BW = 360 kHz, jammer same modulation as wanted 45 48 dB [5] 5 Adjacent channel rejection Channel separation = 50 600 kHz, Channel filter BW = 360 kHz, jammer modulation CW 55 dB [5] 6 Blocking 2 MHz 55 60 dB [5] 7 Blocking 2 MHz (LBT) 55 60 dB [5] 8 Blocking 6 MHz 60 65 dB [5] 9 Blocking 10 MHz 65 70 dB [5] 10 Blocking 10 MHz (LBT) 65 70 dB [5] 11 Blocking 20 MHz 70 75 dB [5] 12 Current consumption System clock to be used. 12.5 13.5 mA [2] 13 Current consumption System clock divided by 2 to be used. 12 13 mA [2] 14 Current consumption System clock divided by 4 to be used. 11.5 12.5 mA [2] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 40 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 14. RX Characteristics - Wireless MBUS mode T2 (meter to other device) Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, frequency deviation = 50kHz, manchester code, datarate = 100 kChips/s, Channel filter bandwidth = 360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Min Typ Max Unit Note -40 °C to 85 °C -108 -105 dBm [2] Co-channel rejection FSK jammer - same modulation as wanted. 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel separation = 600 kHz, Channel filter BW = 360 kHz, jammer same modulation as wanted 50 55 dB [5] 5 Adjacent channel rejection Channel separation = 50 600 kHz, Channel filter BW = 360 kHz, jammer modulation CW 55 dB [5] Table 15. RX Characteristics - Wireless MBUS mode T2 (meter to other device) (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, frequency deviation = 50kHz, manchester code, datarate = 100 kChips/s, Channel filter bandwidth = 360kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min Typ 6 Blocking 2 MHz 55 7 Blocking 2 MHz (LBT) 8 Blocking 9 Max Unit Note 60 dB [5] 55 60 dB [5] 6 MHz 60 65 dB [5] Blocking 10 MHz 65 70 dB [5] 10 Blocking 10 MHz (LBT) 65 70 dB [5] 11 Blocking 20 MHz 70 75 dB [5] 12 Current consumption System clock to be used. 12.5 13.5 mA [2] 13 Current consumption System clock divided by 2 to be used. 12 13 mA [2] 14 Current consumption System clock divided by 4 to be used. 11.5 12.5 mA [2] Table 16. RX Characteristics - Wireless MBUS mode R2 channelised system (meter to other device) Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, channel spacing 60kHz, frequency deviation = 6kHz, manchester code, datarate = 4.8 kChips/s, Channel filter bandwidth = 51kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity -40 °C to 85 °C OL2385 Product data sheet COMPANY PUBLIC Min Typ Max Unit Note -117 -112 dBm [2] All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 41 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 16. RX Characteristics - Wireless MBUS mode R2 channelised system (meter to other device)...continued Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, channel spacing 60kHz, frequency deviation = 6kHz, manchester code, datarate = 4.8 kChips/s, Channel filter bandwidth = 51kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 2 Co-channel rejection 3 4 5 Typ Max Unit Note FSK jammer - same modulation as wanted. 2 2 dB [5] Co-channel rejection CW jammer 2 2 dB [5] Adjacent channel rejection Channel filter BW = 51 kHz, jammer same modulation as wanted. Channel separation = 60kHz, 120kHz, 300 kHz 48 52 dB [5] 50 58 dB [5] 58 62 dB [5] Channel filter BW = 51 kHz, jammer modulation CW. Channel separation = 60kHz, 120kHz, 300 kHz 50 55 dB [5] 50 58 dB [5] 55 62 dB [5] Adjacent channel rejection Min 6 Blocking 2 MHz 68 72 dB [5] 7 Blocking 2 MHz (LBT) 68 72 dB [5] 8 Blocking 6 MHz 75 80 dB [5] 9 Blocking 10 MHz 75 82 dB [5] 10 Blocking 10 MHz (LBT) 75 82 dB [5] 11 Blocking 20 MHz 75 84 dB [5] 12 Current consumption System clock to be used. 12 13 mA [2] 13 Current consumption System clock divided by 2 to be used. 11 12 mA [2] 14 Current consumption System clock divided by 4 to be used. 11 11,5 mA [2] Table 17. RX Characteristics - Wireless MBUS mode C1 Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, frequency deviation = 45kHz, NRZ, datarate = 100 kChips/s, Channel filter bandwidth = 240kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHzVDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -105 -100 dBm [2] Co-channel rejection FSK jammer - same modulation as wanted. 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel filter BW = 240 kHz, jammer same modulation as wanted. Channel separation = 575 kHz dB [5] OL2385 Product data sheet COMPANY PUBLIC Min 45 50 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 42 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 17. RX Characteristics - Wireless MBUS mode C1...continued Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, frequency deviation = 45kHz, NRZ, datarate = 100 kChips/s, Channel filter bandwidth = 240kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHzVDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min 5 Adjacent channel rejection Channel filter BW = 50 240 kHz, jammer modulation CW. Channel separation = 575 kHz 6 Blocking 2 MHz 7 Blocking 8 Typ Max Unit Note 55 dB [5] 55 60 dB [5] 2 MHz (LBT) 55 60 dB [5] Blocking 6 MHz 60 65 dB [5] 9 Blocking 10 MHz 65 70 dB [5] 10 Blocking 10 MHz (LBT) 65 70 dB [5] 11 Blocking 20 MHz 70 75 dB [5] 12 Current consumption System clock to be used. 13 13.5 mA [2] 13 Current consumption System clock divided by 2 to be used. 12 13 mA [2] 14 Current consumption System clock divided by 4 to be used. 12 12.5 mA [2] Table 18. RX Characteristics - Wireless MBUS mode C2 Following characteristics are valid for conditions as follows (unless otherwise specified)2GFSK modulation, BT = 0.5, frequency deviation = 25kHz, NRZ, datarate = 50kChips/s, Channel filter bandwidth = 180kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHzVDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -108 -103 dBm [2] Co-channel rejection GFSK jammer - same modulation as wanted. 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel filter BW = 180 kHz, jammer same modulation as wanted. Channel separation = 575 kHz dB [5] OL2385 Product data sheet COMPANY PUBLIC Min 50 55 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 43 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 19. RX Characteristics - Wireless MBUS mode C2 (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified)2GFSK modulation, BT = 0.5, frequency deviation = 25kHz, NRZ, datarate = 50kChips/s, Channel filter bandwidth = 180kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870MHzVDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min 5 Adjacent channel rejection Channel filter BW = 50 180 kHz, jammer modulation CW. Channel separation = 575 kHz 6 Blocking 2 MHz 7 Blocking 8 Typ Max Unit Note 55 dB [5] 55 60 dB [5] 2 MHz (LBT) 55 60 dB [5] Blocking 6 MHz 60 65 dB [5] 9 Blocking 10 MHz 65 70 dB [5] 10 Blocking 10 MHz (LBT) 65 70 dB [5] 11 Blocking 20 MHz 70 75 dB [5] 12 Current consumption System clock to be used. 12 13 mA [2] 13 Current consumption System clock divided by 2 to be used. 11.5 12.5 mA [2] 14 Current consumption System clock divided by 4 to be used. 11 12 mA [2] Table 20. RX Characteristics - Wireless MBUS mode N Following characteristics are valid for conditions as follows (unless otherwise specified)2GFSK modulation, h = 2.0, BT = 0.5, frequency deviation = 2.4 kHz, NRZ, data-rate = 2.4 kChips/s, Channel spacing = 12.5kHz, Channel filter bandwidth = 12kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169.5MHzVDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -123 -117 dBm [2] Co-channel rejection GFSK jammer - same modulation as wanted. 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection 16 Channel filter BW = 12 kHz, jammer same modulation as 60 wanted. Channel separation: 12.5 kHz, 25 kHz, 62.5 kHz. 60 18 dB [5] 67 dB [5] 65 dB [5] Channel filter BW = 12 kHz, jammer modulation CW. Channel separation: 12.5 kHz, 25 kHz, 62.5 kHz. 45 50 dB [5] 60 65 dB [5] 60 65 dB [5] 5 Adjacent channel rejection Min 6 Blocking 2 MHz 75 78 dB [5] 7 Blocking 2 MHz (LBT) 75 78 dB [5] 8 Blocking 6 MHz 80 85 dB [5] 9 Blocking 10 MHz 80 85 dB [5] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 44 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 20. RX Characteristics - Wireless MBUS mode N...continued Following characteristics are valid for conditions as follows (unless otherwise specified)2GFSK modulation, h = 2.0, BT = 0.5, frequency deviation = 2.4 kHz, NRZ, data-rate = 2.4 kChips/s, Channel spacing = 12.5kHz, Channel filter bandwidth = 12kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169.5MHzVDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min Typ 10 Blocking 10 MHz (LBT) 80 11 Blocking 20 MHz 80 12 Current consumption System clock to be used. 11 13 Current consumption System clock divided by 2 to be used. 14 Current consumption System clock divided by 4 to be used. Max Unit Note 85 dB [5] 85 dB [5] 11.5 mA [2] 10 11 mA [2] 9.5 10.5 mA [2] Table 21. RX Characteristics - Wireless MBUS mode F Following characteristics are valid for conditions as follows (unless otherwise specified)2FSK modulation, frequency deviation = 5.5 kHz, NRZ, data-rate = 2.4 kChips/s, Channel spacing = 50kHz, Channel filter bandwidth = 24 kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte, crystal = 55.2 MHz.Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHzVDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -117 -114 dBm [2] Co-channel rejection GFSK jammer - same modulation as wanted. 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel filter BW = 24 kHz, 65 jammer same modulation as wanted. Channel separation: 870 kHz 70 dB [5] 5 Adjacent channel rejection Channel filter BW = 24 kHz, jammer modulation CW. Channel separation: 870 kHz 65 70 dB [5] 6 Blocking 2 MHz 70 75 dB [5] 7 Blocking 2 MHz (LBT) 70 75 dB [5] 8 Blocking 6 MHz 75 80 dB [5] 9 Blocking 10 MHz 75 80 dB [5] 10 Blocking 10 MHz (LBT) 80 85 dB [5] 11 Blocking 20 MHz 80 85 dB [5] 12 Current consumption System clock to be used. 11 12 mA [2] 13 Current consumption System clock divided by 2 to be used. 10.5 11.5 mA [2] 14 Current consumption System clock divided by 4 to be used. 10 11 mA [2] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 45 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 22. RX Characteristics - Zigbee 868 Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 0.7, BT = 0.5, frequency deviation = 35 kHz, NRZ, data-rate = 100 kChips/s, Channel spacing = 200 kHz, Channel filter bandwidth = 200 kHz, Frame Error Rate (FER) = 80%, payload length = 20 byte crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHz, VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -117 -114 dBm [2] Co-channel rejection 2GFSK jammer - same modulation as wanted 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel filter BW = 200 kHz, 25 jammer same modulation as 45 wanted. Channel separation: 200 kHz, 400 kHz, 1000 kHz 50 28 dB [5] 50 dB [5] 55 dB [5] Channel filter BW = 200 kHz, jammer modulation CW. Channel separation: 200 kHz, 400 kHz, 1000 kHz 40 45 dB [5] 45 50 dB [5] 50 55 dB [5] 5 Adjacent channel rejection Min 6 Blocking 2 MHz 55 60 dB [5] 7 Blocking 2 MHz (LBT) 55 60 dB [5] 8 Blocking 6 MHz 60 65 dB [5] 9 Blocking 10 MHz 60 65 dB [5] 10 Blocking 10 MHz (LBT) 65 70 dB [5] 11 Blocking 20 MHz 65 70 dB [5] 12 Current consumption System clock to be used. 14 15 mA [2] 13 Current consumption System clock divided by 2 to be used. 13.5 14.5 mA [2] 14 Current consumption System clock divided by 4 to be used. 13 13.5 mA [2] Table 23. RX Characteristics - SigFox Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 2.67, BT = 1.0, NRZ, data-rate = 0.6 kChips/s, Channel spacing = 10 kHz, Channel filter bandwidth = 10 kHz, Frame Error Rate (FER) = 20%, payload length = 228 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -124 -119 dBm [2] Co-channel rejection 2GFSK jammer - same modulation as wanted 2 5 dB [5] 3 Co-channel rejection CW jammer 2 5 dB [5] 4 Adjacent channel rejection Channel filter BW = 10 kHz, 50 jammer same modulation as 55 wanted. Channel separation: 10 kHz, 20 kHz, 150 kHz. 60 55 dB [5] 60 dB [5] 65 dB [5] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 46 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 23. RX Characteristics - SigFox...continued Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 2.67, BT = 1.0, NRZ, data-rate = 0.6 kChips/s, Channel spacing = 10 kHz, Channel filter bandwidth = 10 kHz, Frame Error Rate (FER) = 20%, payload length = 228 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz Nr. Description Conditions Min Typ 5 Adjacent channel rejection Channel filter BW = 200 kHz, jammer modulation CW. Channel separation: 200 kHz, 400 kHz, 1000 kHz 50 Max Unit Note 55 dB [5] 55 60 dB [5] 60 65 dB [5] 6 Blocking 2 MHz 70 75 dB [5] 7 Blocking 2 MHz (LBT) 75 80 dB [5] 8 Blocking 6 MHz 80 85 dB [5] 9 Blocking 10 MHz 85 90 dB [5] 10 Blocking 10 MHz (LBT) 85 90 dB [5] 11 Blocking 20 MHz 85 90 dB [5] 12 Current consumption System clock to be used. 13.5 14.5 mA [2] 13 Current consumption System clock divided by 2 to be used. 13 13.5 mA [2] 14 Current consumption System clock divided by 4 to be used. 12.5 13 mA [2] Table 24. RX Characteristics - Narrowband 400MHz application Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 5 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth = 25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -116 -110 dBm [2] Co-channel rejection 2GFSK jammer - same modulation as wanted. 7 10 dB [5] 3 Co-channel rejection CW jammer 2 8 dB [5] 4 Adjacent channel rejection Channel filter BW = 25 kHz, jammer same modulation as wanted. Channel separation: 25 kHz, 50 kHz, 125 kHz 50 55 dB [5] 55 60 dB [5] 60 65 dB [5] Channel filter BW = 25 kHz, jammer modulation CW. Channel separation: 25 kHz, 50 kHz, 125 kHz 50 55 dB [5] 55 60 dB [5] 60 65 dB [5] 5 Adjacent channel rejection Min 6 Blocking 2 MHz 70 75 dB [5] 7 Blocking 2 MHz (LBT) 70 75 dB [5] 8 Blocking 6 MHz 75 80 dB [5] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 47 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 24. RX Characteristics - Narrowband 400MHz application...continued Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 5 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth = 25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min Typ 9 Blocking 10 MHz 80 10 Blocking 10 MHz (LBT) 11 Blocking 20 MHz 12 Current consumption System clock to be used. 14.5 13 Current consumption System clock divided by 2 to be used. 14 Current consumption System clock divided by 4 to be used. Max Unit Note 85 dB [5] 80 85 dB [5] 80 85 dB [5] 15.5 mA [2] 13.5 14.5 mA [2] 13 14 mA [2] Table 25. RX Characteristics - Narrowband 400MHz application Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 5 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth = 25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -115 -110 dBm [2] Co-channel rejection 2GFSK jammer - same modulation as wanted. 6 10 dB [5] 3 Co-channel rejection CW jammer 8 12 dB [5] 4 Adjacent channel rejection Channel filter BW = 25 kHz, jammer same modulation as wanted. Channel separation: 25 kHz, 50 kHz, 125 kHz 50 55 dB [5] 55 60 dB [5] 60 65 dB [5] Channel filter BW = 25 kHz, jammer modulation CW. Channel separation: 25 kHz, 50 kHz, 125 kHz 50 55 dB [5] 55 60 dB [5] 60 65 dB [5] 5 Adjacent channel rejection Min 6 Blocking 2 MHz 70 75 dB [5] 7 Blocking 2 MHz (LBT) 70 75 dB [5] 8 Blocking 6 MHz 75 80 dB [5] 9 Blocking 10 MHz 80 85 dB [5] 10 Blocking 10 MHz (LBT) 80 85 dB [5] 11 Blocking 20 MHz 80 85 dB [5] 12 Current consumption System clock to be used. 14.5 15.5 mA [2] 13 Current consumption System clock divided by 2 to be used. 13.5 14.5 mA [2] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 48 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 25. RX Characteristics - Narrowband 400MHz application...continued Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 5 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth = 25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min 14 Current consumption System clock divided by 4 to be used. Typ Max Unit Note 13 14 mA [2] Table 26. RX Characteristics - Narrowband 400MHz application Following characteristics are valid for conditions as follows (unless otherwise specified) 2GFSK modulation, h = 0.5, BT = 0.5, NRZ, data-rate = 5 kChips/s, Channel spacing = 25kHz, Channel filter bandwidth = 25kHz, Frame Error Rate (FER) = 20%, payload length = 28 byte, crystal = 55.2 MHz. Tamb = 25 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 423MHz VDD = VDD_IO, VDD_DIG, VDD_XO, VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Sensitivity 2 Typ Max Unit Note -40 °C to 85 °C -113 -108 dBm [2] Co-channel rejection 2GFSK jammer - same modulation as wanted. 6 10 dB [5] 3 Co-channel rejection CW jammer 8 12 dB [5] 4 Adjacent channel rejection Channel filter BW = 25 kHz, jammer same modulation as wanted. Channel separation: 50 kHz, 100 kHz, 250 kHz 50 55 dB [5] 55 60 dB [5] 60 65 dB [5] Channel filter BW = 25 kHz, jammer modulation CW. Channel separation: 50 kHz, 100 kHz, 250 kHz 50 55 dB [5] 55 60 dB [5] 60 65 dB [5] 5 Adjacent channel rejection Min 6 Blocking 2 MHz 65 70 dB [5] 7 Blocking 2 MHz (LBT) 65 70 dB [5] 8 Blocking 6 MHz 70 75 dB [5] 9 Blocking 10 MHz 75 80 dB [5] 10 Blocking 10 MHz (LBT) 75 80 dB [5] 11 Blocking 20 MHz 75 80 dB [5] 12 Current consumption System clock to be used. 13.5 15 mA [2] 13 Current consumption System clock divided by 2 to be used. 13.5 14.5 mA [2] 14 Current consumption System clock divided by 4 to be used. 13 14 mA [2] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 49 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 27. TX Characteristics Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Analog start-up time from XTAL on to TX ready From crystal LDO regulator active to TX ready; NDK XTAL NX3225SA 2 Maximum output power, CW mode, L-front matching 3 Minimum output power, CW mode, L-front matching 4 Variation of maximum output power over temperature, CW mode, L-front matching 3.0 V Variation of maximum output power over supply voltage, CW mode, L-front matching 5 Min 13 Typ Max Unit Note 250 us [2] 14. dBm [2] -28 dBm [2] dB [2] -40 °C to 25 °C 0.3 1.0 dB [2] 25 °C to 85 °C 0.3 1.0 dB [2] 25 °C 2.5V to 3.6V 0.1 0.5 25 °C 1.9 V to 3.6 V 0.8 3.0 dB [2] 0.25 0.5 dB [2] 6 PA output power steps, 7 2nd harmonic, at maximum output power Conducted measurement at 50 Ohm -40 -36 dBm [2] 8 3rd harmonic, at maximum output Conducted measurement at power 50 Ohm -60 -50 dBm [2] 9 Spurious emission, at maximum output power Conducted measurement at 50 Ohm reference, 47 MHz to 230 MHz and 470 MHz to 862 MHz -80 -70 dBm [2] 10 Spurious emission, at maximum output power Conducted measurement at 50 Ohm Other frequencies below 1 GHz -73 -65 dBm [2] 11 Spurious emission, at maximum output power Conducted measurement at 50 Ohm 1 GHz to 12.5 GHz -73 -53 dBm [2] 12 Out of band TX noise at 12.5 kHz 868 MHz band offsets, CW mode -100 -90 dBc/Hz [2] 13 Out of band TX noise at 25 kHz offsets, CW mode 868 MHz band -102 -95 dBc/Hz [2] 14 Out of band TX noise at 100 kHz offset, CW mode 868 MHz band -105 -100 dBc/Hz [2] 15 Out of band TX noise at 1 MHz offset, CW mode 868 MHz band -125 -120 dBc/Hz [2] 16 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 12.5 kHz, symbol rate = 3 kBaud, modulation with PN9 sequence -58 dBc [2] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 50 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 27. TX Characteristics...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 17 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 25 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence 18 Adjacent channel power 19 Adjacent channel power Min Typ Max Unit Note -56 dBc [2] GFSK, BT = 0.5, h = 1, channel spacing = 50 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -56 dBc [2] GFSK, BT = 0.5, h = 1, channel spacing = 300 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -60 dBc [2] Table 28. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 20 99.5 % occupied bandwidth 21 Typ Max Unit Note GFSK, BT = 0.5, Manchester data rate = 1.2 kbit/s, frequency deviation = ±2.0 kHz 5 6 kHz [2] 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 2.4 kbit/s, frequency deviation = ±2.4 kHz 8 12 kHz [2] 22 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 4.8 kbit/s, frequency deviation = ±4.8 kHz 15 20 kHz [2] 23 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 50 kbit/s, frequency deviation = ±50 kHz 155 170 kHz [2] 24 TX supply current at maximum output power System clock divided by 2 to be used. EROM execution 30 33 mA [2] 25 Variation over Temperature of TX Supply Current at maximum Output Power 14 dBm System clock divided by 2 to be used. EROM execution; 0.5 mA [2] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 51 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 28. TX Characteristics (… continued)...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions Min Typ 26 Variation over Voltage of TX Supply Current at maximum Output Power 14 dBm (1.9 V 3.6 V) System clock divided by 2 to be used. EROM execution; 3.0 27 Out of band tx noise @ 200kHz Application: zigbee Band: 870MHz using channel filter = 10kHz -112 28 Out of band tx noise @ 400kHz Application: zigbee Band: 870MHz using channel filter = 10kHz 29 Out of band tx noise @ 100kHz 30 Max Unit Note mA [2] -108 dBc/Hz [2] -118 -113 dBc/Hz [2] Application: zigbee Band: 870MHz using channel filter = 10kHz -127 -125 dBc/Hz [2] Out of band tx noise @ 10000kHz Application: zigbee Band: 870MHz using channel filter = 10kHz -138 -135 dBc/Hz [2] 31 Out of band tx noise @ 60kHz Application: wmbus Band: 870 using channel filter = 10kHz -104 -99 dBc/Hz [2] 32 Out of band tx noise @ 360kHz Application: wmbus Band: 870 using channel filter = 10kHz -115 -112 dBc/Hz [2] Table 29. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 870 MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 33 Out of band tx noise @ 6000kHz 34 Typ Max Unit Note Application: wmbus Band: 870 using channel filter = 10kHz -130 -125 dBc/Hz [2] Out of band tx noise @ 10000kHz Application: wmbus Band: 870 using channel filter = 10kHz -135 -130 dBc/Hz [2] 35 ADJACENT CHANNEL POWER, 870 MHz band, SigFox : 2GFSK, h=2.67, BT=1.0, Channel spacing 10kHz, 0.6kChip/s -60 dBc [2] 36 Occupied bandwidth, 870 MHz band, SigFox 2GFSK, h=2.67, BT=1.0, Channel spacing 10kHz, 0.6kChip/s 4 kHz [2] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 5 © NXP B.V. 2021. All rights reserved. 52 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 30. TX Characteristics Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Analog start-up time from XTAL on to TX ready From crystal LDO regulator active to TX ready; NDK XTAL NX3225SA 2 Maximum output power, CW mode, L-front matching 3 Minimum output power, CW mode, L-front matching -31 -22 4 Variation of maximum output 3.0 V power over temperature, CW -40 °C to 25 °C mode, L-front matching 25 °C to 85 °C 0.3 1.0 0.3 1.0 25 °C 2.5V to 3.6V 0.1 0.5 25 °C 1.9 V to 3.6 V 0.8 5 Variation of maximum output power over supply voltage, CW mode, L-front matching Min 13 Typ Max Unit Note 250 us [2] 14. dBm [2] dBm [2] dB dB [2] dB [2] 3.0 dB [2] 0.25 0.5 dB [2] 6 PA output power steps, 7 2nd harmonic, at maximum output power Conducted measurement at 50 Ohm -51 -36 dBm [2] 8 3rd harmonic, at maximum output Conducted measurement at power 50 Ohm -65 -30 dBm [2] 9 Spurious emission, at maximum output power Conducted measurement at 50 Ohm reference, 47 MHz to 230 MHz and 470 MHz to 862 MHz -80 -74 dBm [2] 10 Spurious emission, at maximum output power Conducted measurement at 50 Ohm Other frequencies below 1 GHz -78 -70 dBm [2] Table 31. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 11 Spurious emission, at maximum output power Conducted measurement at 50 Ohm 1 GHz to 12.5 GHz 12 Typ Max Unit Note -78 -70 dBm [2] Out of band TX noise at 12.5 kHz 169 MHz band offsets, CW mode -114 -105 dBc/Hz [2] 13 Out of band TX noise at 25 kHz offsets, CW mode 169 MHz band -114 -105 dBc/Hz [2] 14 Out of band TX noise at 100 kHz 169 MHz band offset, CW mode -118 -110 dBc/Hz [2] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 53 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 31. TX Characteristics (… continued)...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 15 Out of band TX noise at 1 MHz offset, CW mode 16 Typ Max Unit Note 169 MHz band -135 -125 dBc/Hz [2] Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 12.5 kHz, symbol rate = 3 kBaud, modulation with PN9 sequence -70 dBc [2] 17 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 25 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -65 dBc [2] 18 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 50 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -70 dBc [2] 19 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 300 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -68 dBc [2] 20 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 1.2 kbit/s, frequency deviation = ±2.0 kHz 3.8 5 kHz [2] 21 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 2.4 kbit/s, frequency deviation = ±2.4 kHz 5.3 8 kHz [2] 22 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 4.8 kbit/s, frequency deviation = ±4.8 kHz 10 15 kHz [2] 23 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 50 kbit/s, frequency deviation = ±50 kHz 100 120 kHz [2] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 54 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 32. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 169MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 24 TX supply current at maximum output power 25 Min Typ Max Unit Note System clock divided by 2 to be used. EROM execution 32 40 mA [2] Variation over Temperature of TX Supply Current at maximum Output Power 14 dBm System clock divided by 2 to be used. EROM execution; 0.5 mA [2] 26 Variation over Voltage of TX Supply Current at maximum Output Power 14 dBm (1.9 V 3.6 V) System clock divided by 2 to be used. EROM execution; 3.0 mA [2] 27 Out of band tx noise @ 12.5kHz Application: wmbus Band: 170MHz using channel filter = 10kHz -115 -103 dBc/Hz [2] 28 Out of band tx noise @ 37.5kHz Application: wmbus Band: 170MHz using channel filter = 10kHz -115 -110 dBc/Hz [2] 29 Out of band tx noise @ 50kHz Application: wmbus Band: 170MHz using channel filter = 10kHz -115 -110 dBc/Hz [2] 30 Out of band tx noise @ 4500kHz Application: wmbus Band: 170MHz using channel filter = 10kHz -136 -131 dBc/Hz [2] 31 ADJACENT CHANNEL POWER, 2GFSK, h=2.0, BT=0.5, 169 MHz band, Channel spacing 12.5kHz, Wireless MBus - Mode N, 15.4g freq. dev. 2.4kHz, NRZ, 2.4kChip/s -64 dBc [2] 32 Occupied bandwidth, 169 MHz band, Wireless MBus - Mode N, 15.4g 7.7 kHz [2] 2GFSK, h=2.0, BT=0.5, Channel spacing 12.5kHz, freq. dev. 2.4kHz, NRZ, 2.4kChip/s 9 Table 33. TX Characteristics Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Analog start-up time from XTAL on to TX ready From crystal LDO regulator active to TX ready; NDK XTAL NX3225SA 2 Maximum output power, CW mode, L-front matching OL2385 Product data sheet COMPANY PUBLIC Min 13 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 Typ Max Unit Note 250 us [2] 14. dBm [2] © NXP B.V. 2021. All rights reserved. 55 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 33. TX Characteristics...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description 3 Minimum output power, CW mode, L-front matching Conditions Min Typ Max Unit Note -30 -22 dBm [2] Table 34. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 4 Variation of maximum output power over temperature, CW mode, L-front matching Variation of maximum output power over supply voltage, CW mode, L-front matching 5 Min Typ Max Unit Note 3.0 V -40 °C to 25 °C 0.3 1.0 dB dB [2] 25 °C to 85 °C 0.3 1.0 dB [2] 25 °C 2.5V to 3.6V 0.1 0.5 25 °C 1.9 V to 3.6 V 0.8 3.0 dB [2] 0.25 0.5 dB [2] 6 PA output power steps, 7 2nd harmonic, at maximum output power Conducted measurement at 50 Ohm -55 -50 dBm [2] 8 3rd harmonic, at maximum output Conducted measurement at power 50 Ohm -45 -40 dBm [2] 9 Spurious emission, at maximum output power Conducted measurement at 50 Ohm reference, 47 MHz to 230 MHz and 470 MHz to 862 MHz -80 -70 dBm [2] 10 Spurious emission, at maximum output power Conducted measurement at 50 Ohm Other frequencies below 1 GHz -70 -60 dBm [2] 11 Spurious emission, at maximum output power Conducted measurement at 50 Ohm 1 GHz to 12.5 GHz -78 -60 dBm [2] 12 Out of band TX noise at 12.5 kHz 169 MHz band offsets, CW mode -110 -100 dBc/Hz [2] 13 Out of band TX noise at 25 kHz offsets, CW mode 169 MHz band -110 -100 dBc/Hz [2] 14 Out of band TX noise at 100 kHz offset, CW mode 169 MHz band -113 -105 dBc/Hz [2] 15 Out of band TX noise at 1 MHz offset, CW mode 169 MHz band -130 -125 dBc/Hz [2] OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 56 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 34. TX Characteristics (… continued)...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 16 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 12.5 kHz, symbol rate = 3 kBaud, modulation with PN9 sequence 17 Adjacent channel power 18 Adjacent channel power Min Typ Max Unit Note -66 dBc [2] GFSK, BT = 0.5, h = 1, channel spacing = 25 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -65 dBc [2] GFSK, BT = 0.5, h = 1, channel spacing = 50 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -63 dBc [2] Table 35. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 19 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 300 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -60 20 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 1.2 kbit/s, frequency deviation = ±2.0 kHz 5.3 21 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 2.4 kbit/s, frequency deviation = ±2.4 kHz 22 99.5 % occupied bandwidth 23 99.5 % occupied bandwidth OL2385 Product data sheet COMPANY PUBLIC Min Typ Unit Note dBc [2] 8 kHz [2] 7.8 9 kHz [2] GFSK, BT = 0.5, Manchester data rate = 4.8 kbit/s, frequency deviation = ±4.8 kHz 15 18 kHz [2] GFSK, BT = 0.5, Manchester data rate = 50 kbit/s, frequency deviation = ±50 kHz 154 180 kHz [2] All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 Max © NXP B.V. 2021. All rights reserved. 57 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 35. TX Characteristics (… continued)...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 24 TX supply current at maximum output power 25 Min Typ Max Unit Note System clock divided by 2 to be used. EROM execution 33 38 mA [2] Variation over Temperature of TX Supply Current at maximum Output Power 14 dBm System clock divided by 2 to be used. EROM execution; 0.5 mA [2] 26 Variation over Voltage of TX Supply Current at maximum Output Power 14 dBm (1.9 V 3.6 V) System clock divided by 2 to be used. EROM execution; 3.0 mA [2] 27 Out of band tx noise @ 12.5kHz Application: sensus Band: 413MHz using channel filter = 10kHz -110 -100 dBc/Hz [2] 28 Out of band tx noise @ 25kHz Application: sensus Band: 413MHz using channel filter = 10kHz -110 -100 dBc/Hz [2] 29 Out of band tx noise @ 100kHz Application: sensus Band: 413MHz using channel filter = 10kHz -116 -110 dBc/Hz [2] 29 Out of band tx noise @ 2000kHz Application: sensus Band: 413MHz using channel filter = 10kHz -135 -128 dBc/Hz [2] Table 36. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 413MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 30 Out of band tx noise @ 10000kHz 31 32 Typ Max Unit Note Application: sensus Band: 413MHz using channel filter = 10kHz -140 -132 dBc/Hz [2] ADJACENT CHANNEL POWER, 412 MHz band, 4GFSK, h=0.5, BT=0.5, Channel spacing 25kHz, 5kChip/s -65 dBc [2] Occupied bandwidth, 412 MHz band, Sensus 4GFSK, h=0.5, BT=0.5, Channel spacing 25kHz, 5kChip/s 11.3 kHz [2] OL2385 Product data sheet COMPANY PUBLIC Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 13 © NXP B.V. 2021. All rights reserved. 58 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 37. TX Characteristics Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 Analog start-up time from XTAL on to TX ready From crystal LDO regulator active to TX ready; NDK XTAL NX3225SA 2 Maximum output power, CW mode, L-front matching 3 Minimum output power, CW mode, L-front matching 4 Variation of maximum output power over temperature, CW mode, L-front matching 3.0 V Variation of maximum output power over supply voltage, CW mode, L-front matching 5 Min 12.5 Typ Max Unit Note 250 us [2] 14 dBm [2] dBm [2] -31 -25 dB -40 °C to 25 °C 0.3 1.5 25 °C to 85 °C 0.3 1.2 25 °C 2.5V to 3.6V 0.1 0.5 25 °C 1.9 V to 3.6 V 0.8 dB [2] dB [2] 3.0 dB [2] 0.25 0.5 dB [2] 6 PA output power steps, 7 2nd harmonic, at maximum output power Conducted measurement at 50 Ohm -51 -36 dBm [2] 8 3rd harmonic, at maximum output Conducted measurement at power 50 Ohm -47 -30 dBm [2] 9 Spurious emission, at maximum output power Conducted measurement at 50 Ohm reference, 47 MHz to 230 MHz and 470 MHz to 862 MHz -75 -65 dBm [2] 10 Spurious emission, at maximum output power Conducted measurement at 50 Ohm -75 -55 dBm [2] -75 -53 dBm [2] Other frequencies below 1 GHz 11 Spurious emission, at maximum output power Conducted measurement at 50 Ohm 1 GHz to 12.5 GHz Table 38. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 12 Out of band TX noise at 12.5 kHz offsets, CW mode 13 Out of band TX noise at 25 kHz offsets, CW mode OL2385 Product data sheet COMPANY PUBLIC Min Typ Max Unit Note 434 MHz band -110 -98 dBc/Hz [2] 434 MHz band -110 -98 dBc/Hz [2] All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 59 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 38. TX Characteristics (… continued)...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description 14 Typ Max Unit Note Out of band TX noise at 100 kHz 434 MHz band offset, CW mode -114 -100 dBc/Hz [2] 15 Out of band TX noise at 1 MHz offset, CW mode 434 MHz band -130 -125 dBc/Hz [2] 16 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 12.5 kHz, symbol rate = 3 kBaud, modulation with PN9 sequence -66 dBc [2] 17 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 25 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -54 dBc [2] 18 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 50 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -64 dBc [2] 19 Adjacent channel power GFSK, BT = 0.5, h = 1, channel spacing = 300 kHz, symbol rate = 6 kBaud, modulation with PN9 sequence -60 dBc [2] 20 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 1.2 kbit/s, frequency deviation = ±2.0 kHz 5.3 7 kHz [2] 21 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 2.4 kbit/s, frequency deviation = ±2.4 kHz 7.8 9 kHz [2] 22 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 4.8 kbit/s, frequency deviation = ±4.8 kHz 12.5 18 kHz [2] 23 99.5 % occupied bandwidth GFSK, BT = 0.5, Manchester data rate = 50 kbit/s, frequency deviation = ±50 kHz 154 180 kHz [2] 24 TX supply current at maximum output power System clock divided by 2 to be used. EROM execution 30 36 mA [2] OL2385 Product data sheet COMPANY PUBLIC Conditions Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 60 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 39. TX Characteristics (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434MHz, crystal = 55.2 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 25 Variation over Temperature of TX Supply Current at maximum Output Power 14 dBm System clock divided by 2 to be used. EROM execution; 26 Variation over Voltage of TX Supply Current at maximum Output Power 14 dBm (1.9 V 3.6 V) 27 Min Typ Max Unit Note 0.5 mA [2] System clock divided by 2 to be used. EROM execution; 3.0 mA [2] Out of band tx noise @ 12.5kHz Application: wmbus Band: 434MHz using channel filter = 10kHz -110 -100 dBc/Hz [2] 28 Out of band tx noise @ 37.5kHz Application: wmbus Band: 434MHz using channel filter = 10kHz -112 -102 dBc/Hz [2] 29 Out of band tx noise @ 50kHz Application: wmbus Band: 434MHz using channel filter = 10kHz -112 -102 dBc/Hz [2] 29 Out of band tx noise @ 4500kHz Application: wmbus Band: 434MHz using channel filter = 10kHz -135 -130 dBc/Hz [2] 31 ADJACENT CHANNEL POWER, 434 MHz band, Wireless MBus - Mode F 4GFSK, h=0.5, BT=0.5, Channel spacing 25kHz, 5kChip/s -50 dBc [2] 32 Occupied bandwidth, 434 MHz band, Wireless MBus - Mode F 4GFSK, h=0.5, BT=0.5, Channel spacing 25kHz, 5kChip/s 20 kHz [2] 22 Table 40. Characteristics for TRX switch Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. Description Conditions 1 TRX switch isolation from TRXSWITCH_TX to TRXSWITCH_ANT 169 MHz band 2 TRX switch loss from TRXSWITCH_TX to TRXSWITCH_ANT OL2385 Product data sheet COMPANY PUBLIC Min Typ Unit Note 27 dB [5] 315 MHz band 23 dB [5] 434 MHz band 20 dB [5] 868 MHz band 16 dB [5] 925 MHz band 16 dB [5] 169 MHz band 0.3 dB [5] 315 MHz band 0.3 dB [5] 434 MHz band 0.3 dB [5] All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 Max © NXP B.V. 2021. All rights reserved. 61 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 40. Characteristics for TRX switch...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD = 2.5 V to 3.6 V, fC = 434 MHz VDD = VDD_IO, VDD_DIG, VDD_XO_VDD_RF, VDD_ADC, VDD_PA Nr. 3 4 Description Conditions TRX switch isolation from TRXSWITCH_RX to TRXSWITCH_ANT TRX switch loss from TRXSWITCH_RX to TRXSWITCH_ANT Min Typ Max Unit Note 868 MHz band 0.5 dB [5] 925 MHz band 0.5 dB [5] 169 MHz band 27 dB [5] 315 MHz band 24 dB [5] 434 MHz band 22 dB [5] 868 MHz band 18 dB [5] 925 MHz band 18 dB [5] 169 MHz band 0.4 dB [5] 315 MHz band 0.4 dB [5] 434 MHz band 0.4 dB [5] 868 MHz band 0.6 dB [5] 925 MHz band 0.6 dB [5] Table 41. Characteristics for ESD Nr. Description Conditions [1] 1 ESD HBM - RF pins 1500 Ω, 100 pF Electrostatic Discharge (Human Body Model) 2 ESD HBM - non RF pins 1500 Ω, 100 pF Electrostatic Discharge (Human Body Model) 3 ESD CDM Electrostatic Discharge (Charged Device Model) [1] [2] All pins Min Typ Max Unit 2 kV 2 kV 500 V [1] JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. [2] JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Table 42. Static Characteristics I/O Ports Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD_IO = 1.9 V to 3.6 V and 4.5 V to 5.5 V Nr. Description 1 High level input voltage 0.7 × VDD_IO VDD_IO + 0.3 V [1] 2 Low Level input voltage –0.3 0.3 × VDD_IO V [1] 3 Input hysteresis voltage 0.1 × VDD_IO V [4] OL2385 Product data sheet COMPANY PUBLIC Conditions Min All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 Typ Max Unit Note © NXP B.V. 2021. All rights reserved. 62 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 42. Static Characteristics I/O Ports...continued Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD_IO = 1.9 V to 3.6 V and 4.5 V to 5.5 V Nr. Description Conditions Min 4 Output high current At VOH = VDD_IO - 0.4 V 5 Output low current 6 Output high current Typ Max Unit Note 1 mA [1] At VOL = 0.4 V 1 mA [1] VDD_IO > 2.7 V; At VOH = 0.8 × VDD_IO 2 mA [2] Table 43. Static Characteristics I/O Ports (… continued) Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD_IO = 1.9 V to 3.6 V and 4.5 V to 5.5 V Nr. Description Conditions Min Typ 7 Output low current VDD_IO > 2.7 V; At VOL = 0.2 × VDD_IO 2 8 Pull-up resistor Voltage at port pin = 0 V 50 70 9 Pull-down resistor Voltage at port pin = VDD_ IO 50 70 Max Unit Note mA [2] 110 kOhm [1] 110 kOhm [1] Table 44. Dynamic Characteristics I/O Ports Following characteristics are valid for conditions as follows (unless otherwise specified) Tamb = -40 °C to 85 °C, VSS = 0 V, VDD_IO = VDD_IO = 2.5 V to 3.6 V and 4.5 V to 5.5 V Nr. Description Conditions Min 1 Output rise time 50 pF load 2 Output fall time 50 pF load 3 Bandwidth 50 4 5 Typ Max Unit Note 6 35 ns [4] 6 35 ns [4] 50 pF load 5 MHz [4] Bandwidth 20 20 pF load 10 MHz [4] Bandwidth 20 20 pF load, VDD_IO = 1.9 V to 2.5 V 5 MHz [4] Max Unit Note Table 45. SPI / UART Nr. Description Conditions Min 1 SPI operation speed Master Mode CPU_CLK_SEL = 1 or 2; System clock to be used. 50 1.0M baud [4] 2 SPI operation speed Slave Mode CPU_CLK_SEL = 1 or 2; System clock to be used. 50 1.0M baud [4] 3 UART operation speed CPU_CLK_SEL = 1 or 2; System clock to be used. 50 1.7M baud [4] OL2385 Product data sheet COMPANY PUBLIC Typ All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 63 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Table 46. Application relevant limits Nr. Description Unit Note 1 Power-on reset level V [1] 2 Maximum current in pin TXOUT using 12 dBm PA Maximum 10 % PA activation over 10 years 40 mA [4] 3 Maximum current in pin TXOUT using 0 dBm PA Maximum 10 % PA activation over 10 years 3.5 mA [4] 4 Maximum current that can be provided by the internal 5 V regulator; available at VDD_ 3VOUT 50 mA [1] 5 Maximum external load [1] capacitance connected at VDD_3VOUT 168 nF [4] 6 Frequency of external reference crystal connected to XTAL_N and XTAL_P 27.6 MHz [4] 7 Frequency of external reference clock connected to XTAL_N 27.6 MHz [4] 8 Frequency of external reference crystal connected to XTAL_N and XTAL_P Second Crystal frequency selected. 55.2 MHz [4] 9 Frequency of external reference clock connected to XTAL_N Second Crystal frequency selected. 55.2 MHz [4] 10 External clock input voltage level at XTAL_N LDO_XO_OK = 1 0 V [4] 11 External clock input signal amplitude at XTAL_N LDO_XO_OK = 1 0.6 Vpp [4] 12 Input voltage level at XTAL_N when XO LDO is disabled or not ready LDO_XO_OK = 0 -0.1 0.1 V [4] 13 Duty cycle of external clock input [2] signal XTAL_N 45 55 % [4] [1] [2] Conditions Min Typ Max 1.5 1.5 All tolerances of the external capacitors must be taken into account when calculating the maximum allowed external load capacitance. As the external clock input signal requires a DC offset the average value of the external clock signal shall be used as reference level to determine the duty cycle. Notes: 1. 2. 3. 4. 5. OL2385 Product data sheet COMPANY PUBLIC Tested in production test Characterized at 1.9 V, 2.5 V, 3 V, 3.6 V; –40 °C, 25 °C, 85 °C Characterized at 3 V; –40 °C, 25 °C, 85 °C Guaranteed by design Characterized at 3 V; –40 °C, 25 °C, 85 °C, limited sample size All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 64 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 11 Mechanical information 11.1 Package outline Figure 17. Package outline HVQFN48 OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 65 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figure 18. Package detail wettable flanks OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 66 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 12 Glossary AAC — Automatic Amplitude Calibration AAFC — Automatic Amplitude and Frequency Calibration AC — Alternating Current ADC — Analogue to Digital Converter AFC — Automatic Frequency Calibration AGC — Automatic Gain Control API — Application Programming Interface ASK — Amplitude Shift Keying BF — Bit Field BW — BandWidth BWC — BandWidth Control CDR — Clock and Data Recovery CP — Charge Pump CW — Continuous Wave DAC — Digital to Analogue Converter DC — Direct Current DMA — Direct Memory Access ESD — ElectroStatic Discharge FER — Frame Error Rate FSK — Frequency Shift Keying FSM — Finite State Machine FSYNC — Frame SYNChronisation HAL — Hardware Abstraction Layer HBM — Human Body Model IF — Intermediate Frequency IREC — Intelligent Radio Evaluation and Configuration ISM — Industrial, Scientific and Medical ISR — Interrupt Service Routine LDO — Low Drop-Out regulator LIN — Local Interconnect Network LNA — Low Noise Amplifier LO — Local Oscillator LPF — Low-Pass Filter MMR — Missed Message Rate OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 67 / 75 OL2385 NXP Semiconductors Industrial RF transceiver MMU — Memory Management Unit NC — Not Connected NRZ — Non Return to Zero OFMU — Offset Frequency Measurement Unit OOK — On-Off Keying PA — Power Amplifier PFD — Phase-Frequency Detector PLL — Phase Locked Loop POR — Power-On-Reset POK — Power OK PRN — Pseudo-Random Number PRNG — Pseudo-Random Number Generator RF — Radio Frequency RFU — Reserved for Future Use RSSI — Received Signal Strength Indicator RX — Receiver SD — Sigma-Delta SFR — Special Function Register SPI — Serial Peripheral Interface TIA — Trans-Impedance Amplifier TX — Transmitter UART — Universal Asynchronous Receiver and Transmitter UHF — Ultra High Frequency PLL — Phase Locked Loop VCO — Voltage Controlled Oscillator WUP — Wake-UP ZIF — Zero Intermediate Frequency OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 68 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 13 References [1] MRK III Programmers Reference [2] Application note — Surface mount reflow soldering, Rev. 7 — 18 April 2013 AN10365 [3] MRK III MDI OL2385 Product data sheet COMPANY PUBLIC — MRK III and MRK IIIe instruction set, Rev. 04 — 04 Jul 2012 — Monitor and Download Interface, Rev. 09 — 23 June 2014 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 69 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 14 Revision history Table 47. Revision history Document ID Release date Data sheet status Change notice Supersedes OL2385_2.0 24 June 2021 Product data sheet — OL2385_1.1 Modifications: • Updated Section 3 • Table 2 – Changed to OL2385AHN/001A1 from OL2385AHN/001A0 – Changed to OL2385AHN/001A2 from OL2385AHN/001A1 OL2385_1.1 15 May 2020 Modifications: • Updated Section 5 OL2385_1.0 15 June 2016 Modifications: • Initial product data sheet - COMPANY PUBLIC OL2385 Product data sheet COMPANY PUBLIC Product data sheet — OL2385_1.0 Product data sheet — — All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 70 / 75 OL2385 NXP Semiconductors Industrial RF transceiver 15 Legal information 15.1 Data sheet status Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. notice. This document supersedes and replaces all information supplied prior to the publication hereof. 15.2 Definitions Draft — A draft status on a document indicates that the content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included in a draft version of a document and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without OL2385 Product data sheet COMPANY PUBLIC Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 71 / 75 OL2385 NXP Semiconductors Industrial RF transceiver No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Security — Customer understands that all NXP products may be subject to unidentified or documented vulnerabilities. Customer is responsible for the design and operation of its applications and products throughout their lifecycles to reduce the effect of these vulnerabilities on customer’s applications and products. Customer’s responsibility also extends to other open and/or proprietary technologies supported by NXP products for use in customer’s applications. NXP accepts no liability for any vulnerability. Customer should regularly check security updates from NXP and follow up appropriately. Customer shall select products with security features that best meet rules, regulations, and standards of the intended application and make the ultimate design decisions regarding its products and is solely responsible for compliance with all legal, regulatory, and security related requirements concerning its products, regardless of any information or support that may be provided by NXP. NXP has a Product Security Incident Response Team (PSIRT) (reachable at PSIRT@nxp.com) that manages the investigation, reporting, and solution release to security vulnerabilities of NXP products. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. OL2385 Product data sheet COMPANY PUBLIC All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 72 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Tables Tab. 1. Tab. 2. Tab. 3. Tab. 4. Tab. 5. Tab. 6. Tab. 7. Tab. 8. Tab. 9. Tab. 10. Tab. 11. Tab. 12. Tab. 13. Tab. 14. Tab. 15. Tab. 16. Tab. 17. Tab. 18. Tab. 19. Tab. 20. Quick reference data .........................................4 Ordering information ..........................................5 Marking information ...........................................6 Pinning description ............................................ 9 External power supply domains ...................... 12 Limiting values ................................................ 33 Recommended operating conditions ............... 34 RX Characteristics - General .......................... 34 RX Characteristics - manchester receiver ....... 35 RX Characteristics - manchester receiver ....... 36 Characteristics - manchester receiver (… continued) ........................................................39 RX Characteristics - Wireless MBUS mode S ...................................................................... 39 RX Characteristics - Wireless MBUS mode T1 (meter to other device) .............................. 40 RX Characteristics - Wireless MBUS mode T2 (meter to other device) .............................. 41 RX Characteristics - Wireless MBUS mode T2 (meter to other device) (… continued) ........41 RX Characteristics - Wireless MBUS mode R2 channelised system (meter to other device) ............................................................. 41 RX Characteristics - Wireless MBUS mode C1 .................................................................... 42 RX Characteristics - Wireless MBUS mode C2 .................................................................... 43 RX Characteristics - Wireless MBUS mode C2 (… continued) ............................................44 RX Characteristics - Wireless MBUS mode N ...................................................................... 44 OL2385 Product data sheet COMPANY PUBLIC Tab. 21. Tab. 22. Tab. 23. Tab. 24. Tab. 25. Tab. 26. Tab. 27. Tab. 28. Tab. 29. Tab. 30. Tab. 31. Tab. 32. Tab. 33. Tab. 34. Tab. 35. Tab. 36. Tab. 37. Tab. 38. Tab. 39. Tab. 40. Tab. 41. Tab. 42. Tab. 43. Tab. 44. Tab. 45. Tab. 46. Tab. 47. RX Characteristics - Wireless MBUS mode F ...................................................................... 45 RX Characteristics - Zigbee 868 ..................... 46 RX Characteristics - SigFox ............................ 46 RX Characteristics - Narrowband 400MHz application ....................................................... 47 RX Characteristics - Narrowband 400MHz application ....................................................... 48 RX Characteristics - Narrowband 400MHz application ....................................................... 49 TX Characteristics ........................................... 50 TX Characteristics (… continued) ................... 51 TX Characteristics (… continued) ................... 52 TX Characteristics ........................................... 53 TX Characteristics (… continued) ................... 53 TX Characteristics (… continued) ................... 55 TX Characteristics ........................................... 55 TX Characteristics (… continued) ................... 56 TX Characteristics (… continued) ................... 57 TX Characteristics (… continued) ................... 58 TX Characteristics ........................................... 59 TX Characteristics (… continued) ................... 59 TX Characteristics (… continued) ................... 61 Characteristics for TRX switch ........................ 61 Characteristics for ESD ...................................62 Static Characteristics I/O Ports ....................... 62 Static Characteristics I/O Ports (… continued) ........................................................63 Dynamic Characteristics I/O Ports .................. 63 SPI / UART ......................................................63 Application relevant limits ................................64 Revision history ...............................................70 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 73 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Figures Fig. 1. Fig. 2. Fig. 3. Fig. 4. Fig. 5. Fig. 6. Fig. 7. Fig. 8. Block diagram ................................................... 7 Pinout HVQFN48 .............................................. 8 Pin 1 keep out area .......................................... 9 Connection of external power supply domains for different power supply use cases ............................................................... 13 Power supply state diagram ............................15 Local Oscillator ................................................16 Radio transmitter system ................................ 17 Transmit receive switch ...................................17 OL2385 Product data sheet COMPANY PUBLIC Fig. 9. Fig. 10. Fig. 11. Fig. 12. Fig. 13. Fig. 14. Fig. 15. Fig. 16. Fig. 17. Fig. 18. UHF receiver subsystem .................................18 Digital receiver block diagram ......................... 19 Digital receiver front-end ................................. 20 AGC block diagram .........................................21 Attenuation Distribution ................................... 22 RX chain/channel block diagram .....................23 Clock distribution overview ..............................25 External temperature sensor measurement .... 29 Package outline HVQFN48 ............................. 65 Package detail wettable flanks ........................66 All information provided in this document is subject to legal disclaimers. Rev. 2.0 — 24 June 2021 © NXP B.V. 2021. All rights reserved. 74 / 75 OL2385 NXP Semiconductors Industrial RF transceiver Contents 1 1.1 2 3 4 5 6 7 8 8.1 8.1.1 8.2 9 9.1 9.2 9.2.1 9.2.2 9.2.3 General information ............................................ 1 General description ............................................1 Features and benefits .........................................2 Applications .........................................................3 Quick reference data .......................................... 4 Ordering information .......................................... 5 Marking .................................................................6 Block diagram ..................................................... 7 Pinning information ............................................ 8 Pinning ............................................................... 8 Pin 1 keep out area ...........................................8 Pin description ................................................... 9 Design information ........................................... 11 Introduction ...................................................... 11 Power management .........................................11 Modes of operation ..........................................11 External power supply domains .......................11 Recommended external capacitors in the supply domains ................................................13 9.2.4 Power supply states ........................................ 14 9.3 Local oscillator .................................................15 9.4 UHF transmitter subsystem ............................. 16 9.4.1 General description ..........................................16 9.4.2 TRX switch ...................................................... 17 9.4.2.1 Features ...........................................................17 9.5 UHF receiver subsystem ................................. 18 9.5.1 Features ...........................................................18 9.5.2 Antenna switch ................................................ 18 9.5.3 LNA .................................................................. 18 9.5.4 Attenuators .......................................................19 9.5.5 Mixer ................................................................ 19 9.5.6 Baseband amplifier (TIA) and DC offset compensation ...................................................19 9.5.7 SD ADC ........................................................... 19 9.5.8 Digital receiver block diagram ......................... 19 9.5.9 Digital IF preprocessing ...................................19 9.5.9.1 Features ...........................................................20 9.5.9.2 Block diagram ..................................................20 9.5.9.3 Description ....................................................... 20 9.5.10 Automatic gain control ..................................... 20 9.5.10.1 Features ...........................................................20 9.5.10.2 Block diagram ..................................................21 9.5.10.3 Description ....................................................... 21 9.5.11 Narrow band receive chain ..............................22 9.5.11.1 Features ...........................................................22 9.5.12 Data processing ...............................................23 9.5.12.1 Features ...........................................................23 9.6 Micro-controller subsystem .............................. 24 9.6.1 RISC controller ................................................ 24 9.6.2 System clock ................................................... 24 9.6.2.1 Clock sources .................................................. 24 9.6.3 Direct Memory Access .....................................25 9.6.4 Interrupt system ............................................... 25 9.6.5 9.6.6 9.6.7 9.6.8 9.6.9 9.6.10 9.6.11 9.6.11.1 9.6.12 I/O ports ...........................................................26 Timer/Counter 0, 2 ...........................................26 Timer/Counter 1 ...............................................26 Timer 3 and RX chain timers ...........................26 Polling and wake-up timer ............................... 26 Watchdog timer ................................................27 USART .............................................................27 Features: ..........................................................27 Registers for mathematical-logical operations ........................................................ 28 9.6.12.1 CRC register ....................................................28 9.6.12.2 CRC32 register ................................................ 28 9.6.13 Analog-to-digital converter (ADC) .................... 28 9.6.14 Temperature measurement ..............................29 9.6.14.1 External temperature measurement ................ 29 9.7 Device modes ..................................................30 9.7.1 INIT .................................................................. 30 9.7.2 PROTECTED ...................................................30 9.7.3 TAMPERED ..................................................... 30 9.7.4 VIRGIN .............................................................31 9.8 System routines ............................................... 31 9.8.1 Boot routine ..................................................... 31 9.8.2 Monitor and download interface ...................... 31 9.8.3 Hardware abstraction layer ..............................31 10 Characterization information ........................... 33 10.1 Limiting values .................................................33 10.2 Recommended operating conditions ............... 34 10.3 Characteristics ................................................. 34 11 Mechanical information .................................... 65 11.1 Package outline ............................................... 65 12 Glossary ............................................................. 67 13 References ......................................................... 69 14 Revision history ................................................ 70 15 Legal information .............................................. 71 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section 'Legal information'. © NXP B.V. 2021. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 June 2021 Document identifier: OL2385