OM7827

BFU690F NPN wideband silicon RF transistor Rev. 2 — 14 March 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. 1.2 Features and benefits  Low noise high linearity microwave transistor  High output third-order intercept point 34 dBm at 1.8 GHz  40 GHz fT silicon technology 1.3 Applications     Ka band oscillators DRO’s C-band high output buffer amplifier ZigBee LTE, cellular, UMTS 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCBO collector-base voltage open emitter - - 16 V VCEO collector-emitter voltage open base - - 5.5 V VEBO emitter-base voltage open collector - - 2.5 V IC collector current - 70 100 mA 490 mW Ptot total power dissipation Tsp  85 C - - hFE DC current gain IC = 20 mA; VCE = 2 V; Tj = 25 C 90 135 180 CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 404 - fF fT transition frequency IC = 60 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 C - 18 GHz Gp(max) maximum power gain IC = 60 mA; VCE = 1 V; f = 1.8 GHz; Tamb = 25 C - 20.5 - dB NF noise figure IC = 15 mA; VCE = 2 V; f = 1.8 GHz; S = opt - 0.65 - dB PL(1dB) output power at 1 dB gain compression IC = 70 mA; VCE = 4 V; ZS = ZL = 50 ; f = 1.8 GHz; Tamb = 25 C - 22 dBm [1] Tsp is the temperature at the solder point of the emitter lead. [2] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain (MSG). [1] [2] - - BFU690F NXP Semiconductors NPN wideband silicon RF transistor 2. Pinning information Table 2. Discrete pinning Pin Description 1 emitter 2 base 3 emitter 4 collector Simplified outline  Graphic symbol       PEE 3. Ordering information Table 3. Ordering information Type number BFU690F Package Name Description Version - plastic surface-mounted flat pack package; reverse pinning; 4 leads SOT343F 4. Marking Table 4. Marking Type number Marking BFU690F D4* Description * = p : made in Hong Kong * = t : made in Malaysia * = w : made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 16 V VCEO collector-emitter voltage open base - 5.5 V VEBO emitter-base voltage open collector - 2.5 V IC collector current Ptot total power dissipation Tstg Tj [1] BFU690F Product data sheet - 100 mA - 490 mW storage temperature 65 +150 C junction temperature - 150 C Tsp  85 C [1] Tsp is the temperature at the solder point of the emitter lead. All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 2 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) [1] Conditions [1] thermal resistance from junction to solder point Typ Unit 132 K/W Determined by simulation. DDD  3WRW P:       Fig 1. BFU690F Product data sheet         7VSƒ&  Power derating curve All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 3 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 7. Characteristics Table 7. Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit V(BR)CBO collector-base breakdown voltage IC = 2.5 A; IE = 0 mA 16 - - V V(BR)CEO collector-emitter breakdown voltage IC = 1 mA; IB = 0 mA 5.5 - - V - 70 100 mA nA IC collector current ICBO collector-base cut-off current IE = 0 mA; VCB = 8 V - - 100 hFE DC current gain IC = 20 mA; VCE = 2 V 90 135 180 CCES collector-emitter capacitance VCB = 2 V; f = 1 MHz - 527 - fF CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz - 1699 - fF CCBS collector-base capacitance VCB = 2 V; f = 1 MHz - 404 - fF fT transition frequency IC = 60 mA; VCE = 1 V; f = 2 GHz; Tamb = 25 C - 18 - GHz Gp(max) maximum power gain IC = 60 mA; VCE = 1 V; Tamb = 25 C f = 1.5 GHz - 22 - dB f = 1.8 GHz - 20.5 - dB f = 2.4 GHz - 17 - dB f = 1.5 GHz - 15 - dB f = 1.8 GHz - 13.5 - dB f = 2.4 GHz - 11 - dB f = 1.5 GHz - 0.60 - dB f = 1.8 GHz - 0.65 - dB f = 2.4 GHz - 0.70 - dB f = 1.5 GHz - 18.5 - dB f = 1.8 GHz - 17.5 - dB f = 2.4 GHz - 15.5 - dB f = 1.5 GHz - 22 - dBm f = 1.8 GHz - 22 - dBm f = 2.4 GHz - 20 - dBm f = 1.5 GHz - 34 - dBm f = 1.8 GHz - 34 - dBm f = 2.4 GHz - 33 - dBm s212 NF PL(1dB) IP3 [1] IC = 60 mA; VCE = 1 V; Tamb = 25 C insertion power gain IC = 15 mA; VCE = 2 V; S = opt; Tamb = 25 C noise figure Gass IC = 15 mA; VCE = 2 V; S = opt; Tamb = 25 C associated gain output power at 1 dB gain compression third-order intercept point [1] IC = 70 mA; VCE = 4 V; ZS = ZL = 50 ; Tamb = 25 C IC = 70 mA; VCE = 4 V; ZS = ZL = 50 ; Tamb = 25 C Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG. BFU690F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 4 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 001aam833 80 001aam834 200 (1) IC (mA) hFE (2) (3) 60 150 (4) (5) (6) 40 100 (7) (8) (9) 20 50 (10) 0 0 0 1 2 3 4 5 0 20 40 60 VCE (V) Tamb = 25 C. 80 100 IC (mA) VCE = 2 V; Tamb = 25 C. (1) IB = 550 A (2) IB = 500 A (3) IB = 450 A (4) IB = 400 A (5) IB = 350 A (6) IB = 300 A (7) IB = 250 A (8) IB = 200 A (9) IB = 150 A (10) IB = 100 A Fig 2. Collector current as a function of collector-emitter voltage; typical values BFU690F Product data sheet Fig 3. DC current gain as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 5 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 001aam835 600 001aam836 25 fT (GHz) CCBS (fF) 20 400 15 10 200 5 0 0 0 4 8 12 0 20 40 60 VCB (V) f = 1 MHz, Tamb = 25 C. Fig 4. 80 100 IC (mA) VCE = 1 V; f = 2 GHz; Tamb = 25 C. Collector-base capacitance as a function of collector-base voltage; typical values Fig 5. Transition frequency as a function of collector current; typical values 001aam837 25 G (dB) (1) MSG (2) 20 (3) Gp(max) 15 10 5 0 0 20 40 60 80 100 IC (mA) VCE = 1 V; Tamb = 25 C. (1) f = 1.5 GHz (2) f = 1.8 GHz (3) f = 2.4 GHz Fig 6. Gain as a function of collector current; typical value BFU690F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 6 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 001aam838 40 G (dB) 001aam839 40 G (dB) 30 30 MSG 20 20 MSG Gp(max) |S21|2 Gp(max) |S21|2 10 10 0 0 0 2 4 6 8 10 0 2 4 6 8 f (GHz) VCE = 1 V; IC = 10 mA; Tamb = 25 C. Fig 7. VCE = 1 V; IC = 60 mA; Tamb = 25 C. Gain as a function of frequency; typical values 001aam840 1.0 10 f (GHz) NFmin (dB) Fig 8. Gain as a function of frequency; typical values 001aam841 1.0 NFmin (dB) (1) 0.8 0.8 (2) (3) 0.6 0.6 0.4 0.4 0.2 0.2 0 0 10 15 20 25 30 35 40 IC (mA) 45 0 1 2 3 f (GHz) VCE = 2 V; Tamb = 25 C. VCE = 2 V; IC = 15 mA; Tamb = 25 C. (1) f = 2.4 GHz (2) f = 1.8 GHz (3) f = 1.5 GHz Fig 9. Minimum noise figure as a function of collector current; typical values BFU690F Product data sheet Fig 10. Minimum noise figure as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 7 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 8. Package outline 3ODVWLFVXUIDFHPRXQWHGIODWSDFNSDFNDJHUHYHUVHSLQQLQJOHDGV ' 627) ( $ \ ; +( H   $ F  Z 0 $ /S  ES E Z $ 0 GHWDLO; H   PP VFDOH ',0(16,216PPDUHWKHRULJLQDOGLPHQVLRQV 81,7 $ PD[ ES E F ' ( H H +( /S Z \ PP                     5()(5(1&(6 287/,1( 9(56,21 ,(& -('(& -(,7$ 627)    (8523($1 352-(&7,21 ,668('$7(   Fig 11. Package outline SOT343F BFU690F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 8 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 9. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 10. Abbreviations Table 8. Abbreviations Acronym Description DRO Dielectric Resonator Oscillator Ka Kurtz above LTE Long Term Evolution NPN Negative-Positive-Negative UMTS Universal Mobile Telecommunications System 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BFU690F v.2 20140314 Product data sheet - BFU690F v.1 Modifications: BFU690F v.1 BFU690F Product data sheet • • • • • Table 1 on page 1: The value and conditions for Ptot have been updated. Table 5 on page 2: The value and conditions for Ptot have been updated. Table 6 on page 3: The value and conditions for Rth(j-sp) have been updated. Figure 1 on page 3: The graph has been updated. Section 9 on page 9: The ESD caution has been moved here from Section 1.1 on page 1. 20101216 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 - © NXP Semiconductors N.V. 2014. All rights reserved. 9 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. BFU690F Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 10 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BFU690F Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 14 March 2014 © NXP Semiconductors N.V. 2014. All rights reserved. 11 of 12 BFU690F NXP Semiconductors NPN wideband silicon RF transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Handling information. . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP Semiconductors N.V. 2014. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 14 March 2014 Document identifier: BFU690F