OM7925/BGU7051,598

BGU7051 SiGe:C low noise high linearity amplifier Rev. 2 — 11 November 2011 Product data sheet 1. Product profile 1.1 General description The BGU7051 is a low noise high linearity amplifier for wireless infrastructure applications.The LNA has a high input and output return loss and is designed to operate between 0.5 GHz and 1.5 GHz. It is housed in a 3  3  0.85 mm3 10-terminal plastic thin small outline package. The LNA is ESD protected on all terminals. 1.2 Features and benefits          Low Noise Figure (NF) = 0.65 dB at 900 MHz High linearity performance, IP3O = 33 dBm at 900 MHz High input and output return loss Unconditionally stable 110 GHz transit frequency - SiGe:C technology Supply voltage 3.3 V Small 10-terminal leadless package 3  3  0.85 mm3 ESD protection on all terminals Moisture sensitivity level 1 1.3 Applications  LNA for wireless infrastructure applications (0.5 GHz to 1.5 GHz)  Low noise applications 1.4 Quick reference data Table 1. Quick reference data f = 900 MHz; VCC = 3.3 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. Symbol Parameter VCC supply voltage Conditions Min Typ Max Unit 3.0 - 3.6 V 65 ICC supply current 50 80 mA Gass associated gain 19.5 21.0 22.5 dB NF noise figure - 0.65 0.95 dB PL(1dB) output power at 1 dB gain compression 15 16.5 - dBm IP3O output third-order intercept point 30 33 - dBm BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier 2. Pinning information 2.1 Pinning terminal 1 index area n.c. 1 10 n.c. VCC1 2 9 VCC2 GND 3 8 GND RF_IN 4 7 RF_OUT GND 5 6 GND BGU7051 aaa-000469 Transparent top view Fig 1. Pin configuration 2.2 Pin description Table 2. Pin description Symbol Pin Description n.c. 1, 10 not connected VCC1 2 supply voltage GND 3, 5, 6, 8 ground RF_IN 4 RF input RF_OUT 7 RF output VCC2 9 supply voltage 3. Ordering information Table 3. Ordering information Type number Package Name BGU7051 BGU7051 Product data sheet Description Version HVSON10 plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3  3  0.85 mm All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 SOT650-1 © NXP B.V. 2011. All rights reserved. 2 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCC supply voltage Pi(RF)CW continuous waveform RF input power Tstg storage temperature 65 150 C Tj junction temperature - C Tamb ambient temperature VESD electrostatic discharge voltage VCC = 3.3 V 0 5 V - 20 dBm 150 40 85 C Human Body Model (HBM); According JEDEC standard 22-A114E - 4 kV Charged Device Model (CDM); According JEDEC standard 22-C101B - 2 kV 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions Typ Unit 26 K/W 6. Characteristics Table 6. Characteristics VCC = 3.3 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF parameters are measured at the device RF in and RF output terminals. Symbol Parameter VCC Min Typ Max Unit supply voltage 3.0 - 3.6 V ICC supply current 50 65 80 mA Gass associated gain f = 750 MHz - 23.5 - dB f = 850 MHz - 21.5 - dB f = 900 MHz 19.5 21.0 22.5 dB f = 750 MHz - - dB dB NF PL(1dB) IP3O Conditions noise figure output power at 1 dB gain compression output third-order intercept point BGU7051 Product data sheet 0.6 f = 850 MHz - 0.63 - f = 900 MHz - 0.65 0.95 dB f = 750 MHz - 17.0 - dBm f = 850 MHz - 16.5 - dBm f = 900 MHz 15 16.5 - dBm f = 750 MHz - 32 - dBm f = 850 MHz - 32 - dBm f = 900 MHz 30 33 - dBm 2-tone; spacing 5 MHz; Pi = 20 dBm All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 3 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier Table 6. Characteristics …continued VCC = 3.3 V; Tamb = 25 C; input and output 50 ; unless otherwise specified. All RF parameters are measured at the device RF in and RF output terminals. Symbol Parameter Conditions Min Typ Max Unit RLin input return loss f = 750 MHz - 27.5 - dB f = 850 MHz - 26.0 - dB f = 900 MHz - 24.5 - dB f = 750 MHz - 18.0 - dB f = 850 MHz - 17.5 - dB output return loss RLout ISL isolation K Rollett stability factor f = 900 MHz - 18 - dB f = 750 MHz - 29.5 - dB f = 850 MHz - 27.5 - dB f = 900 MHz - 26.5 - dB 0 GHz  f  25 GHz 1 - - 6.1 Performance curves aaa-000470 0 S11 (dB) -10 (1) aaa-000471 35 S21 (dB) 30 25 (2) (3) 20 (1) -20 (2) (3) 15 10 -30 5 -40 500 700 900 1100 0 500 1300 1500 f (MHz) VCC = 3.3 V. 700 (1) Tj = 40 C (2) Tj = 25 C (2) Tj = 25 C (3) Tj = 85 C (3) Tj = 85 C Input reflection coefficient as a function of frequency BGU7051 Product data sheet 1100 1300 1500 f (MHz) VCC = 3.3 V. (1) Tj = 40 C Fig 2. 900 Fig 3. Forward transmission coefficient as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 4 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier aaa-000472 0 aaa-000473 0 S12 (dB) S22 (dB) -10 (1) (2) (3) -10 (1) (2) (3) -20 -20 -30 -30 500 700 900 1100 -40 500 1300 1500 f (MHz) VCC = 3.3 V. 700 1100 1300 1500 f (MHz) VCC = 3.3 V. (1) Tj = 40 C (1) Tj = 40 C (2) Tj = 25 C (2) Tj = 25 C (3) Tj = 85 C (3) Tj = 85 C Fig 4. 900 Output reflection coefficient as a function of frequency Fig 5. aaa-000474 40 S11,S21, S22,S12, (dB) Reverse transmission coefficient as a function of frequency aaa-000475 25 K 20 S21 20 15 0 S11 10 (1) S22 (2) -20 (3) 5 S12 -40 0 0 500 1000 1500 2000 2500 f (MHz) 0 5 10 15 20 25 f (GHz) VCC = 3.3 V; Tamb = 25 C. VCC = 3.3 V. (1) Tj = 40 C (2) Tj = 25 C (3) Tj = 85 C Fig 6. Wideband s-parameters as a function of frequency BGU7051 Product data sheet Fig 7. Stability K-factor as a function of frequency All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 5 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier aaa-000476 20 aaa-000477 40 PL(1dB) (dBm) IP3O (dBm) (1) (2) 18 30 (3) (2) (3) (1) 16 20 14 10 12 10 700 800 900 0 700 1000 800 f (MHz) 1000 f (MHz) VCC = 3.3 V. VCC = 3.3 V. (1) Tj = 40 C (1) Tj = 40 C (2) Tj = 25 C (2) Tj = 25 C (3) Tj = 85 C (3) Tj = 85 C Fig 8. 900 Output power at 1 dB gain compression as a function of frequency Fig 9. Output third-order intercept point as a function of frequency aaa-000478 2 NF (dB) 1.5 (3) 1 (2) (1) 0.5 0 500 700 900 1100 1300 1500 f (MHz) VCC = 3.3 V. (1) Tj = 40 C (2) Tj = 25 C (3) Tj = 85 C Fig 10. Noise figure as function of frequency BGU7051 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 6 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier 7. Application information Figure 11 shows the typical application circuit for the BGU7051. The device is internally matched to 50 , and therefore does not need any external matching. The value of the input and output DC blocking C1 and C2 are recommended to be 1 nF. DC decoupling capacitors C3 and C4 should be located as close as possible to the BGU7051. In case different system blocks are supplied via the same voltage rail, it is recommended to use a bias choke in the bias line on the positions of R1 and R2. The value of this choke is depending on the frequency that needs to be decoupled. R1 RF_INPUT C7 C1 C5 C3 C4 VCC2 C9 R2 VCC1 VCC1 2 9 RF_IN 4 7 RF_OUT 3 5 6 C6 C2 C8 VCC2 C10 RF_OUTPUT 8 aaa-000479 See Table 7 for a list of components. Fig 11. Typical application circuit BGU7051 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 7 of 13 BGU7051 NXP Semiconductors X2 C2 X3 RFOUT SiGe:C low noise high linearity amplifier C8 C10 C4 V2 C5 R2 GND R1 V1 C9 C6 C7 C3 RFIN C1 X1 aaa-000480 See Table 7 for a list of components. Fig 12. Layout of the evaluation board Table 7. List of components See Figure 11 for schematics. Component Value Size Function capacitor [1] 1 nF 0402 DC block C3, C4 capacitor [1] 100 pF 0402 bias decoupling C5, C6 capacitor [1] 100 nF 0402 bias decoupling C7, C8, C9, C10 capacitor [2] 100 nF 0603 optional R1, R2 resistor 0 0402 C1, C2 BGU7051 Product data sheet Description [1] Murata GRM155 or capacitor of same quality. [2] Murata GRM188 or capacitor of same quality. All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 8 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier 8. Package outline HVSON10: plastic thermal enhanced very thin small outline package; no leads; 10 terminals; body 3 x 3 x 0.85 mm SOT650-1 0 1 2 mm scale X A B D A A1 E c detail X terminal 1 index area C e1 terminal 1 index area e 5 y y1 C v M C A B w M C b 1 L Eh 6 10 Dh DIMENSIONS (mm are the original dimensions) UNIT A(1) max. A1 b c D(1) Dh E(1) Eh e e1 L v w y y1 mm 1 0.05 0.00 0.30 0.18 0.2 3.1 2.9 2.55 2.15 3.1 2.9 1.75 1.45 0.5 2 0.55 0.30 0.1 0.05 0.05 0.1 Note 1. Plastic or metal protrusions of 0.075 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC JEITA SOT650-1 --- MO-229 --- EUROPEAN PROJECTION ISSUE DATE 01-01-22 02-02-08 Fig 13. Package outline SOT650-1 (HVSON10) BGU7051 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 9 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier 9. Abbreviations Table 8. Abbreviations Acronym Description AC Alternating Current CW Continuous Wave ESD ElectroStatic Discharge ESR Equivalent Series Resistance HBM Human Body Model LNA Low Noise Amplifier PDA Personal Digital Assistant RF Radio Frequency SiGe:C Silicon Germanium Carbon 10. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BGU7051 v.2 20111111 Product data sheet - BGU7051 v.1 Modifications: BGU7051 v.1 BGU7051 Product data sheet • • Figure 10: data plots updated Unit dB changed to dBm for PL(1dB) in Section 6 “Characteristics” 20111027 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 - © NXP B.V. 2011. All rights reserved. 10 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from competent authorities. BGU7051 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 11 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BGU7051 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 2 — 11 November 2011 © NXP B.V. 2011. All rights reserved. 12 of 13 BGU7051 NXP Semiconductors SiGe:C low noise high linearity amplifier 13. Contents 1 1.1 1.2 1.3 1.4 2 2.1 2.2 3 4 5 6 6.1 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Performance curves . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 November 2011 Document identifier: BGU7051