PBHV8540Z

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9040Z. 1.2 Features I I I I I High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified 1.3 Applications I I I I I I I Electronic ballast for fluorescent lighting LED driver for LED chain module LCD backlighting High Intensity Discharge (HID) front lighting Automotive motor management Hook switch for wired telecom Switch mode power supply 1.4 Quick reference data Table 1. Symbol VCESM VCEO IC hFE Quick reference data Parameter collector-emitter peak voltage collector-emitter voltage collector current DC current gain VCE = 10 V; IC = 50 mA Conditions VBE = 0 V open base Min 100 Typ Max 500 400 0.5 Unit V V A NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description base collector emitter collector 1 2 3 3 sym016 Simplified outline 4 Symbol 2, 4 1 3. Ordering information Table 3. Ordering information Package Name PBHV8540Z SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 Type number 4. Marking Table 4. Marking codes Marking code V8540Z Type number PBHV8540Z PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 2 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VCESM VEBO IC ICM IBM Ptot Tj Tamb Tstg [1] [2] Parameter collector-base voltage collector-emitter voltage collector-emitter peak voltage emitter-base voltage collector current peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base VBE = 0 V open collector single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C [1] [2] Min −55 −65 Max 500 400 500 6 0.5 1 200 0.7 1.4 150 +150 +150 Unit V V V V A A mA W W °C °C °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 1600 Ptot (mW) 1200 (1) 006aab155 800 (2) 400 0 −75 −25 25 75 125 175 Tamb (°C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 3 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) Rth(j-sp) [1] [2] Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to solder point Conditions in free air [1] [2] Min - Typ - Max 175 89 20 Unit K/W K/W K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 103 Zth(j-a) (K/W) 102 006aab156 duty cycle = 1 0.75 0.33 0.2 0.1 0.5 10 0.02 1 0.05 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0 0.01 006aab157 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 4 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter Conditions Min Typ Max 100 10 100 100 Unit nA µA nA nA collector-base cut-off VCB = 320 V; IE = 0 A current VCB = 320 V; IE = 0 A; Tj = 150 °C collector-emitter cut-off current emitter-base cut-off current DC current gain VCE = 320 V; IC = 0 A VEB = 4 V; IC = 0 A VCE = 10 V IC = 50 mA IC = 100 mA IC = 300 mA VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 10 mA IC = 100 mA; IB = 20 mA IC = 300 mA; IB = 60 mA VBEsat fT base-emitter saturation voltage transition frequency IC = 300 mA; IB = 60 mA VCE = 10 V; IC = 100 mA; f = 100 MHz [1] [1] ICES IEBO hFE 100 80 10 - 200 150 20 100 60 135 0.91 30 200 90 250 1.1 mV mV mV V MHz Cc Ce td tr ton ts tf toff [1] collector capacitance VCB = 20 V; IE = ie = 0 A; f = 1 MHz emitter capacitance delay time rise time turn-on time storage time fall time turn-off time Pulse test: tp ≤ 300 µs; δ ≤ 0.02. - 4 165 50 6200 6250 800 2200 3000 - pF pF ns ns ns ns ns ns VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz VCC = 6 V; IC = 0.5 A; IBon = 0.1 A; IBoff = −0.1 A PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 5 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 400 hFE 300 (1) 006aab174 1.0 IC (A) 0.8 006aab175 IB (mA) = 35 31.5 24.5 17.5 28 21 14 10.5 0.6 200 (2) 7 3.5 0.4 (3) 100 0.2 0 10−1 1 10 102 IC (mA) 103 0 0 1 2 3 4 VCE (V) 5 VCE = 10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 4. DC current gain as a function of collector current; typical values 1.6 VBE (V) 1.2 006aab176 Fig 5. Collector current as a function of collector-emitter voltage; typical values 1.3 VBEsat (V) 0.9 (1) 006aab177 0.8 (1) (2) (2) (3) 0.5 (3) 0.4 0 10−1 1 10 102 103 104 IC (mA) 0.1 10−1 1 10 102 103 104 IC (mA) VCE = 10 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 5 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 6. Base-emitter voltage as a function of collector current; typical values Fig 7. Base-emitter saturation voltage as a function of collector current; typical values PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 6 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 10 VCEsat (V) 1 006aab178 10 VCEsat (V) 1 006aab179 10−1 (1) (2) (3) 10−1 (1) (2) (3) 10−2 10−1 1 10 102 IC (mA) 103 10−2 10−1 1 10 102 IC (mA) 103 IC/IB = 5 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5 Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values 103 RCEsat (Ω) 102 006aab180 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 103 RCEsat (Ω) 102 006aab181 10 (1) (2) (3) 10 (1) (2) (3) 1 1 10−1 10−1 1 10 102 IC (mA) 103 10−1 10−1 1 10 102 IC (mA) 103 IC/IB = 5 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 20 (2) IC/IB = 10 (3) IC/IB = 5 Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 7 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 8. Test information VBB VCC RB oscilloscope VI R1 (probe) 450 Ω R2 RC Vo (probe) 450 Ω DUT oscilloscope mlb826 Fig 12. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 6.7 6.3 3.1 2.9 4 1.1 0.7 7.3 6.7 3.7 3.3 1.8 1.5 1 2.3 4.6 Dimensions in mm 2 3 0.8 0.6 0.32 0.22 04-11-10 Fig 13. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBHV8540Z [1] PBHV8540Z_1 Package SOT223 Description 8 mm pitch, 12 mm tape and reel Packing quantity 1000 -115 4000 -135 For further information and the availability of packing methods, see Section 14. © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 8 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 11. Soldering 7.00 3.85 3.60 3.50 0.30 1.20 (4 ×) 4 7.40 3.90 4.80 7.65 1 2 3 1.20 (3 ×) 1.30 (3 ×) 5.90 6.15 solder lands occupied area solder resist solder paste Dimensions in mm sot223_fr Fig 14. Reflow soldering footprint SOT223 (SC-73) 8.90 6.70 4 4.30 8.10 8.70 1 2 3 1.90 (2×) 1.10 7.30 transport direction during soldering solder lands occupied area solder resist Dimensions in mm sot223_fw Fig 15. Wave soldering footprint SOT223 (SC-73) PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 9 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Release date 20080207 Data sheet status Product data sheet Change notice Supersedes Document ID PBHV8540Z_1 PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 10 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com PBHV8540Z_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 7 February 2008 11 of 12 NXP Semiconductors PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 7 February 2008 Document identifier: PBHV8540Z_1