PBLS2004D

PBLS2004D 20 V PNP BISS loadswitch Rev. 01 — 23 June 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor and NPN ResistorEquipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features s s s s s Low VCEsat (BISS) and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count 1.3 Applications s s s s Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 1.4 Quick reference data Table 1: Symbol VCEO IC RCEsat Quick reference data Parameter collector-emitter voltage collector current (DC) collector-emitter saturation resistance collector-emitter voltage output current bias resistor 1 (input) bias resistor ratio IC = −1 A; IB = −100 mA open base [1] Conditions open base Min - Typ 185 Max −20 −1 280 Unit V A mΩ TR1; PNP low VCEsat transistor TR2; NPN resistor-equipped transistor VCEO IO R1 R2/R1 [1] 15.4 0.8 22 1 50 100 28.6 1.2 V mA kΩ Pulse test: tp ≤ 300 µs; δ ≤ 0.02. Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 1 2 3 sym036 Simplified outline 6 5 4 Symbol 6 5 4 1 2 3 R1 R2 TR2 TR1 3. Ordering information Table 3: Ordering information Package Name PBLS2004D SC-74 Description plastic surface mounted package; 6 leads Version SOT457 Type number 4. Marking Table 4: Marking codes Marking code F9 Type number PBLS2004D 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IB IBM Ptot Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) peak base current total power dissipation tp ≤ 300 µs Tamb ≤ 25 °C [1] [2] [3] Conditions open emitter open base open collector tp ≤ 300 µs Min - Max −20 −20 −5 −1 −2 −0.3 −0.6 250 350 400 Unit V V V A A A A mW mW mW TR1; PNP low VCEsat transistor PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 2 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO VI Parameter collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Ptot output current peak collector current total power dissipation total power dissipation tp ≤ 300 µs Tamb ≤ 25 °C [1] Conditions open emitter open base open collector Min −65 −65 Max 50 50 10 +40 −10 100 100 200 400 530 600 +150 150 +150 Unit V V V V V mA mA mW mW mW mW °C °C °C TR2; NPN resistor-equipped transistor Per device [1] [2] [3] Tstg Tj Tamb [1] [2] [3] storage temperature junction temperature ambient temperature Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. 0.8 Ptot (W) (1) 006aaa414 0.6 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 3 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 6. Thermal characteristics Table 6: Symbol Per device Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] Thermal characteristics Parameter Conditions Min Typ Max 315 236 210 Unit K/W K/W K/W [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. duty cycle = 1 Zth(j-a) 0.75 (K/W) 0.5 0.33 102 0.2 0.1 0.05 10 0.02 0.01 103 006aaa415 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 4 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 103 Zth(j-a) (K/W) 102 δ=1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 006aaa463 1 10 102 tp (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 103 Zth(j-a) (K/W) δ = 1 0.75 0.5 2 10 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 006aaa464 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 5 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain Conditions VCB = −20 V; IE = 0 A VCB = −20 V; IE = 0 A; Tj = 150 °C VCE = −20 V; VBE = 0 V VEB = −5 V; IC = 0 A VCE = −2 V; IC = −1 mA VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCE = −2 V; IC = −1 A VCE = −2 V; IC = −2 A VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1 mA IC = −500 mA; IB = −50 mA IC = −1 A; IB = −50 mA IC = −1 A; IB = −100 mA RCEsat VBEsat VBEon td tr ton ts tf toff fT Cc collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency collector capacitance IC = −50 mA; VCE = −10 V; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz IC = −1 A; IB = −100 mA IC = −1 A; IB = −50 mA IC = −1 A; IB = −100 mA VCE = −5 V; IC = −1 A IC = −1 A; IBon = −50 mA; IBoff = 50 mA [1] [1] [1] [1] [1] [1] [1] Min 220 220 220 155 60 150 - Typ 495 440 310 220 120 −55 −100 −200 −185 185 −0.95 −1 −0.85 8 34 42 140 45 185 185 15 Max −0.1 −50 −0.1 −0.1 −90 −150 −300 −280 280 −1.1 −1.1 −1.1 20 Unit µA µA µA µA TR1; PNP low VCEsat transistor ICES IEBO hFE mV mV mV mV mΩ V V V ns ns ns ns ns ns MHz pF [1] [1] [1] PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 6 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch Table 7: Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol ICBO ICEO Parameter collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain collector-emitter saturation voltage Conditions VCB = 50 V; IE = 0 A VCE = 30 V; IB = 0 A VCE = 30 V; IB = 0 A; Tj = 150 °C VEB = 5 V; IC = 0 A VCE = 5 V; IC = 5 mA IC = 10 mA; IB = 0.5 mA Min 60 2.5 15.4 0.8 VCB = 10 V; IE = ie = 0 A; f = 1 MHz Typ 1.1 1.7 22 1 Max 100 1 50 180 150 0.8 28.6 1.2 2.5 pF mV V V kΩ Unit nA µA µA µA TR2; NPN resistor-equipped transistor IEBO hFE VCEsat VI(off) VI(on) R1 R2/R1 Cc off-state input voltage VCE = 5 V; IC = 100 µA on-state input voltage VCE = 0.3 V; IC = 5 mA bias resistor 1 (input) bias resistor ratio collector capacitance [1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02. PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 7 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 1000 hFE 800 (1) 006aaa416 −1 VCEsat (V) −10−1 006aaa417 600 (2) (1) (2) (3) 400 −10−2 (3) 200 0 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values −1.0 VBE (V) −0.8 (1) Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values −1.2 VBEsat (V) −1.0 (1) 006aaa418 006aaa419 (2) −0.8 (2) −0.6 (3) −0.6 (3) −0.4 −0.4 −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 8 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch −2.0 IC (A) −1.6 IB = −13 mA 006aaa420 −11.7 mA −10.4 mA −9.1 mA −7.8 mA −6.5 mA −5.2 mA −3.9 mA 102 RCEsat (Ω) 10 006aaa421 −1.2 −0.8 −2.6 mA 1 −1.3 mA (1) (2) (3) −0.4 −0 −0 −2 −4 VCE (V) −6 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 103 RCEsat (Ω) 102 006aaa423 −1 VCEsat (V) −10−1 006aaa422 (1) (2) 10 −10−2 (3) 1 (1) (2) (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 9 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 103 hFE (1) (2) (3) 006aaa038 10−1 006aaa039 (1) VCEsat (V) (2) (3) 102 10 1 10−1 1 10 IC (mA) 102 10−2 1 10 IC (mA) 102 VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values 10 006aaa040 Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values 10 006aaa041 VI(on) (V) (1) (2) VI(off) (V) 1 (3) 1 (1) (2) (3) 10−1 10−1 1 10 IC (mA) 102 10−1 10−1 1 10 IC (mA) 102 VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 10 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 8. Test information − IB 90 % input pulse (idealized waveform) − I Bon (100 %) 10 % − I Boff − IC 90 % output pulse (idealized waveform) − I C (100 %) 10 % t td t on tr ts t off tf 006aaa266 Fig 17. BISS transistor switching time definition VBB VCC RB (probe) oscilloscope 450 Ω VI R1 R2 RC Vo (probe) 450 Ω DUT oscilloscope mgd624 IC = −1 A; IBon = −50 mA; IBoff = 50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω Fig 18. Test circuit for switching times PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 11 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 9. Package outline 3.1 2.7 6 5 4 0.6 0.2 1.1 0.9 3.0 2.5 1.7 1.3 pin 1 index 1 0.95 1.9 Dimensions in mm 2 3 0.40 0.25 0.26 0.10 04-11-08 Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number PBLS2004D Package SOT457 Description 4 mm pitch, 8 mm tape and reel; T1 4 mm pitch, 8 mm tape and reel; T2 [1] [2] [3] For further information and the availability of packing methods, see Section 17. T1: normal taping T2: reverse taping [2] [3] Packing quantity 3000 -115 -125 10000 -135 -165 PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 12 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 11. Soldering 3.45 1.95 solder lands 0.95 3.30 2.825 0.45 0.55 occupied area solder paste solder resist 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 20. Reflow soldering footprint 5.30 solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste MSC423 1.40 4.30 Dimensions in mm Fig 21. Wave soldering footprint PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 13 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 12. Revision history Table 9: Revision history Release date 20050623 Data sheet status Product data sheet Change notice Doc. number Supersedes Document ID PBLS2004D_1 PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01— 23 June 2005 14 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 13. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Disclaimers Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01.00 — 23 June 2005 15 of 16 Philips Semiconductors PBLS2004D 20 V PNP BISS loadswitch 18. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 Packing information. . . . . . . . . . . . . . . . . . . . . 12 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Contact information . . . . . . . . . . . . . . . . . . . . 15 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2005 Document ID: PBLS2004D_1 Published in The Netherlands