PBLS6003D,115

PBLS6003D 60 V, 1 A PNP loadswitch double transistor 30 August 2023 Product data sheet 1. General description PNP low VCEsat transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 2. Features and benefits • • • • • • Low VCEsat transistor and resistor-equipped transistor in one package Low threshold voltage (< 1 V) compared to MOSFET Low drive power required Space-saving solution Reduction of component count AEC-Q101 qualified 3. Applications • • • • Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit open base - - -60 V - - -1 A IC = -1 A; IB = -100 mA; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δfactor ≤ 0.02 - 255 340 mΩ open base - - 50 V TR1; PNP low VCEsat transistor VCEO collector-emitter voltage IC collector current RCEsat collector-emitter saturation resistance [1] TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage IO output current - - 100 mA R1 bias resistor 1 (input) 7 10 13 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 [1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 E1 emitter TR1 2 B1 base TR1 3 O2 output (collector) TR2 4 GND2 GND (emitter) TR2 5 I2 input (base) TR2 6 C1 collector TR1 Graphic symbol C1 6 5 I2 4 R1 1 2 GND2 3 R2 TR2 TR1 TSOP6 (SOT457) E1 B1 O2 sym036 6. Ordering information Table 3. Ordering information Type number Package PBLS6003D Name Description Version TSOP6 plastic, surface-mounted package (SC-74; TSOP6); 6 leads SOT457 7. Marking Table 4. Marking codes Type number Marking code PBLS6003D F3 PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 2 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low VCEsat transistor VCBO collector-base voltage open emitter - -80 V VCEO collector-emitter voltage open base - -60 V VEBO emitter-base voltage open collector - -5 V IC collector current [1] - -700 mA [2] - -850 mA [3] - -1 A - -2 A - -300 mA - -1 A [1] - 250 mW [2] - 350 mW [3] - 400 mW ICM peak collector current IB base current single pulse; tp ≤ 1 ms IBM peak base current single pulse; tp ≤ 1 ms Ptot total power dissipation Tamb ≤ 25 °C TR2; NPN resistor-equipped transistor VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage -10 40 V IO output current - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation [1] - 200 mW [2] - 200 mW [3] - 200 mW [1] - 400 mW [2] - 530 mW [3] - 600 mW Tamb ≤ 25 °C Per device Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -65 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 3 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 006aaa461 0.8 Ptot (W) (1) 0.6 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint 2 (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint Fig. 1. Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit [1] - - 312 K/W [2] - - 236 K/W [3] - - 208 K/W - - 105 K/W Per device Rth(j-a) thermal resistance from in free air junction to ambient TR1; PNP low VCEsat transistor Rth(j-sp) [1] [2] [3] thermal resistance from junction to solder point Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 4 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 006aaa462 103 δ= 1 0.75 0.5 0.33 102 0.2 0.1 Zth(j-a) (K/W) 0.05 0.02 0.01 10 0 1 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa463 103 Zth(j-a) (K/W) δ=1 102 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 1 cm Fig. 3. 10- 1 1 10 102 2 tp (s) 103 TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 5 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 006aaa464 103 Zth(j-a) (K/W) δ = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 102 10 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VCB = -60 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -60 V; IE = 0 A; Tj = 150 °C - - -50 µA TR1; PNP low VCEsat transistor ICBO collector-base cut-off current ICES collector-emitter cut-off VCE = -60 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -5 V; IC = -1 mA; Tamb = 25 °C 200 350 - VCE = -5 V; IC = -500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C 150 230 - VCE = -5 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; TR1; PNP low VCEsat transistor; Tamb = 25 °C 100 160 - IC = -100 mA; IB = -1 mA; Tamb = 25 °C - -110 -175 mV IC = -500 mA; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -135 -180 mV IC = -1 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - -255 -340 mV IC = -1 A; IB = -100 mA; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δfactor ≤ 0.02 - 255 340 mΩ VCEsat collector-emitter saturation voltage RCEsat collector-emitter saturation resistance VBEsat base-emitter saturation IC = -1 A; IB = -50 mA; Tamb = 25 °C; voltage pulsed; tp ≤ 300 µs; δfactor ≤ 0.02 - -0.95 -1.1 V VBEon base-emitter turn-on voltage - -0.82 -0.9 V PBLS6003D Product data sheet VCE = -5 V; IC = -1 A; Tamb = 25 °C; pulsed; tp ≤ 300 µs; δfactor ≤ 0.02 All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 6 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor Symbol Parameter Conditions Min Typ Max Unit td delay time - 11 - ns tr rise time - 30 - ns ton turn-on time - 41 - ns ts storage time IC = -0.5 A; IBon = -25 mA; IBoff = 25 mA; Tamb = 25 °C - 205 - ns tf fall time - 55 - ns toff turn-off time - 260 - ns Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C - 9 15 pF fT transition frequency VCE = -10 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C 150 185 - MHz TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 °C - - 100 nA ICEO collector-emitter cut-off VCE = 30 V; IB = 0 A; Tamb = 25 °C current VCE = 30 V; IB = 0 A; Tj = 150 °C - - 1 µA - - 50 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 400 µA hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 °C 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 °C - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 µA; Tamb = 25 °C - 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 °C 2.5 1.8 - V R1 bias resistor 1 (input) 7 10 13 kΩ R2/R1 bias resistor ratio 0.8 1 1.2 Cc collector capacitance - - 2.5 VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 006aaa474 600 pF 006aaa475 -1 (1) hFE VCEsat (V) 400 (2) - 10- 1 (3) 200 0 - 10- 1 -1 (1) (2) (3) - 10 - 102 - 10- 2 - 10- 1 - 103 - 104 IC (mA) VCE = -5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig. 5. Product data sheet - 10 - 102 - 103 - 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C TR1 (PNP): DC current gain as a function of collector current; typical values PBLS6003D -1 Fig. 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 7 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 006aaa476 - 1.0 006aaa477 - 1.1 VBEsat (V) VBE (V) - 0.8 - 0.9 (1) (1) - 0.7 (2) - 0.6 - 0.5 (2) (3) (3) - 0.4 - 0.3 - 0.2 - 10- 1 -1 - 10 - 102 - 0.1 - 10- 1 - 103 - 104 IC (mA) VCE = −5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 7. 006aaa478 IB (mA) = - 35.0 - 31.5 - 28.0 - 24.5 - 21.0 IC (A) - 1.6 - 103 - 104 IC (mA) Fig. 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 006aaa479 103 - 17.5 - 14.0 102 - 10.5 - 7.0 - 0.8 10 (1) (2) (3) - 3.5 1 - 0.4 0 -1 -2 -3 -4 VCE (V) 10- 1 - 10- 1 -5 Tamb = 25 °C Fig. 9. - 102 RCEsat (Ω) - 1.2 0.0 - 10 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C TR1 (PNP): Base-emitter voltage as a function of collector current; typical values - 2.0 -1 -1 - 10 - 102 - 103 - 104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -55 °C TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig. 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 8 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 006aaa480 -1 006aaa481 103 RCEsat (Ω) VCEsat (V) 102 - 10- 1 10 (1) (2) (3) (1) (2) 1 (3) - 10- 2 - 10- 1 -1 - 10 - 102 10- 1 - 10- 1 - 103 - 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 -1 - 102 - 10 - 103 - 104 IC (mA) Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig. 11. TR1 (PNP): Collector-emitter saturation voltage Fig. 12. TR1 (PNP): Collector-emitter saturation as a function of collector current; typical values resistance as a function of collector current; typical values 006aaa034 103 (1) (2) (3) hFE 006aaa035 1 VCEsat (V) 102 (1) (2) (3) 10- 1 10 1 10- 1 1 10 IC (mA) 10- 2 102 VCE = 5 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Product data sheet 10 IC (mA) 102 IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = -40 °C Fig. 13. TR2 (NPN): DC current gain as a function of collector current; typical values PBLS6003D 1 Fig. 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 9 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 006aaa036 10 VI(on) (V) 006aaa037 10 VI(off) (V) (1) (2) (1) (3) 1 1 (2) (3) 10- 1 10- 1 1 10 IC (mA) 102 10- 1 10- 2 VCE = 0.3 V (1) Tamb = - 40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C 10- 1 1 IC (mA) 10 VCE = 5 V (1) Tamb = - 40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig. 15. TR2 (NPN): On-state input voltage as a function Fig. 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values of collector current; typical values PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 10 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 17. Transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 II = -5 A; IBon = 25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig. 18. Test circuit for switching times Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 11 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 12. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 1.9 Dimensions in mm 0.26 0.10 18-03-11 Fig. 19. Package outline TSOP6 (SOT457) 13. Soldering 3.45 1.95 0.45 0.55 (6×) (6×) 0.95 solder lands solder resist 3.3 2.825 0.95 solder paste occupied area 0.7 (6×) Dimensions in mm 0.8 (6×) 2.4 sot457_fr Fig. 20. Reflow soldering footprint for TSOP6 (SOT457) PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 12 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 5.3 1.5 (4×) 1.475 0.45 (2×) 5.05 1.475 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.45 (6×) 2.85 sot457_fw Fig. 21. Wave soldering footprint for TSOP6 (SOT457) PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 13 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBLS6003D v.3 20230830 Product data sheet - PBLS6003D_2 Modifications: • • • The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. Section "Packing information" removed. PBLS6003D_2 20090907 Product data sheet - PBLS6003D_1 PBLS6003D_1 20050628 Product data sheet - - PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 14 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. 15. Legal information Data sheet status Document status [1][2] Product status [3] Definition Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Applications — Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the internet at https://www.nexperia.com. Definitions Draft — The document is a draft version only. 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In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the Nexperia product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. Nexperia does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — Nexperia products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nexperia.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. Nexperia hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of Nexperia products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This Nexperia product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 15 / 16 PBLS6003D Nexperia 60 V, 1 A PNP loadswitch double transistor Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 4 10. Characteristics............................................................ 6 11. Test information........................................................ 11 12. Package outline........................................................ 12 13. Soldering................................................................... 12 14. Revision history........................................................14 15. Legal information......................................................15 © Nexperia B.V. 2023. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 30 August 2023 PBLS6003D Product data sheet All information provided in this document is subject to legal disclaimers. 30 August 2023 © Nexperia B.V. 2023. All rights reserved 16 / 16