PBSS302NZ
20 V, 5.8 A NPN low VCEsat transistor
12 January 2023
Product data sheet
1. General description
NPN low VCEsat transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
package.
PNP complement: PBSS302PZ
2. Features and benefits
•
•
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
AEC-Q101 qualified
3. Applications
•
•
•
•
•
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
20
V
IC
collector current
-
-
5.8
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
11.6
A
RCEsat
collector-emitter
saturation resistance
IC = 4 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
30
43
mΩ
PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
B
base
2
C
collector
3
E
emitter
4
C
collector
Simplified outline
Graphic symbol
C
4
B
1
2
3
E
SC-73 (SOT223)
sym123
6. Ordering information
Table 3. Ordering information
Type number
Package
PBSS302NZ
Name
Description
Version
SC-73
plastic, surface-mounted package with increased heatsink; SOT223
4 leads; 2.3 mm pitch; 6.5 mm x 3.5 mm x 1.65 mm body
7. Marking
Table 4. Marking codes
Type number
Marking code
PBSS302NZ
S302NZ
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
20
V
VCEO
collector-emitter voltage
open base
-
20
V
VEBO
emitter-base voltage
open collector
-
5
V
IC
collector current
-
5.8
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
11.6
A
Ptot
total power dissipation
Tamb ≤ 25 °C
[1]
-
0.7
W
[2]
-
1.7
W
[3]
-
2
W
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBSS302NZ
Product data sheet
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
006aaa560
2.5
Ptot
(W)
(1)
2.0
(2)
1.5
1.0
(3)
0.5
0
- 75
- 25
25
75
125
175
Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint
2
(2) FR4 PCB, mounting pad for collector 6 cm
(3) FR4 PCB, standard footprint
Fig. 1.
Power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
thermal resistance from in free air
junction to ambient
Rth(j-sp)
[1]
[2]
[3]
Conditions
Min
Typ
Max
Unit
[1]
-
-
179
K/W
[2]
-
-
74
K/W
[3]
-
-
63
K/W
-
-
15
K/W
thermal resistance from
junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa561
103
Zth(j-a)
(K/W)
δ= 1
102
10
0.50
0.20
0.10
0.05
0.75
0.33
0.02
0.01
1
0
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302NZ
Product data sheet
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
102
Zth(j-a)
(K/W)
006aaa562
δ= 1
0.50
0.20
10
0.75
0.33
0.10
0.05
0.02
1
0.01
0
10- 1
10- 5
10- 4
10- 3
10- 2
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
10- 1
1
10
102
2
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
102
006aaa563
δ= 1
0.75
Zth(j-a)
(K/W)
0.50
10
0.20
0.33
0.10
0.05
0.02
1
0.01
0
10- 1
10- 5
10- 4
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
Ceramic PCB, Al2O3 standard footprint
Fig. 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS302NZ
Product data sheet
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = 20 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 20 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 2 V; IC = 0.5 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
300
570
-
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
300
550
-
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
250
520
-
VCE = 2 V; IC = 4 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
200
450
-
VCE = 2 V; IC = 7 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
200
350
-
IC = 0.5 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
20
25
mV
IC = 1 A; IB = 50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
35
50
mV
IC = 1 A; IB = 10 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
50
70
mV
IC = 2 A; IB = 40 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
70
100
mV
IC = 4 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
120
170
mV
IC = 4 A; IB = 400 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
115
165
mV
IC = 4 A; IB = 40 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
155
240
mV
IC = 5.8 A; IB = 290 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
170
250
mV
IC = 4 A; IB = 200 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
30
43
mΩ
IC = 4 A; IB = 40 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
38
60
mΩ
base-emitter saturation IC = 1 A; IB = 100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
voltage
-
0.82
0.9
V
IC = 4 A; IB = 400 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
0.92
1.05
V
VCEsat
RCEsat
VBEsat
collector-emitter
saturation voltage
collector-emitter
saturation resistance
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
-
0.75
0.85
V
td
delay time
-
15
-
ns
tr
rise time
VCC = 12.5 V; IC = 3 A; IBon = 0.15 A;
IBoff = -0.15 A; Tamb = 25 °C
-
40
-
ns
ton
turn-on time
-
55
-
ns
ts
storage time
-
270
-
ns
tf
fall time
-
85
-
ns
toff
turn-off time
-
335
-
ns
PBSS302NZ
Product data sheet
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fT
transition frequency
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
-
140
-
MHz
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz;
Tamb = 25 °C
-
95
150
pF
006aaa572
1000
hFE
800
006aaa578
14
IC
(A)
12
(1)
IB (mA) = 50
45
40
35
30
25
20
10
600
400
(2)
8
15
6
10
(3)
4
200
2
0
10- 1
1
10
102
0
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 5.
5
0
1
2
3
4
VCE (V)
5
Tamb = 25 °C
Fig. 6.
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
006aaa573
1.2
006aaa576
1.2
VBE
(V)
VBEsat
(V)
0.8
0.8
(1)
(1)
(2)
(2)
0.4
0.4
(3)
(3)
0
10- 1
1
10
102
0
10- 1
103
104
IC (mA)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 7.
Product data sheet
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
PBSS302NZ
1
Fig. 8.
Base-emitter saturation voltage as a function of
collector current; typical values
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
006aaa574
1
VCEsat
(V)
VCEsat
(V)
10- 1
10- 1
(1)
(2)
(3)
(1)
10- 2
10- 3
10- 1
10- 2
1
10
103
10- 3
10- 1
104
IC (mA)
006aaa577
103
102
102
10
10
1
1
(1)
(2)
(3)
10- 1
102
10- 2
10- 1
103
104
IC (mA)
006aaa579
(1)
(2)
(3)
1
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
Product data sheet
103
104
IC (mA)
10- 1
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
PBSS302NZ
102
103
RCEsat
(Ω)
10
10
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
RCEsat
(Ω)
1
1
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
10- 2
10- 1
(2)
(3)
102
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 9.
006aaa575
1
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig. 13. Switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mlb826
Fig. 14. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PBSS302NZ
Product data sheet
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20 V, 5.8 A NPN low VCEsat transistor
12. Package outline
6.7
6.3
3.1
2.9
1.8
1.5
4
1.1
0.7
7.3
6.7
3.7
3.3
1
2
2.3
3
0.8
0.6
4.6
0.32
0.22
Dimensions in mm
04-11-10
Fig. 15. Package outline SC-73 (SOT223)
13. Soldering
7
3.85
3.6
3.5
0.3
1.3 1.2
(4×) (4×)
solder lands
4
solder resist
3.9
6.1 7.65
solder paste
occupied area
1
2
3
Dimensions in mm
2.3
2.3
1.2
(3×)
1.3
(3×)
6.15
sot223_fr
Fig. 16. Reflow soldering footprint for SC-73 (SOT223)
PBSS302NZ
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
8.9
6.7
1.9
solder lands
4
solder resist
6.2
1
2
8.7
Dimensions in mm
3
1.9
(3×)
2.7
occupied area
preferred transport
direction during soldering
2.7
1.1
1.9
(2×)
sot223_fw
Fig. 17. Wave soldering footprint for SC-73 (SOT223)
PBSS302NZ
Product data sheet
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20 V, 5.8 A NPN low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS302NZ v.3
20230112
Product data sheet
-
PBSS302NZ_2
Modifications:
•
•
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
Section "Packing information" removed.
PBSS302NZ_2
20091120
Product data sheet
-
PBSS302NZ_1
PBSS302NZ_1
20060908
Product data sheet
-
-
PBSS302NZ
Product data sheet
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PBSS302NZ
Nexperia
20 V, 5.8 A NPN low VCEsat transistor
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the internet at https://www.nexperia.com.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
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to be accurate and reliable. However, Nexperia does not give any
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or completeness of such information and shall have no liability for the
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and products using Nexperia products, and Nexperia accepts no liability for
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or problem which is based on any weakness or default in the customer’s
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liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
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Suitability for use in automotive applications — This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
PBSS302NZ
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20 V, 5.8 A NPN low VCEsat transistor
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 2
9. Thermal characteristics............................................... 3
10. Characteristics............................................................ 5
11. Test information.......................................................... 8
12. Package outline.......................................................... 9
13. Soldering..................................................................... 9
14. Revision history........................................................11
15. Legal information......................................................12
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Nexperia B.V. 2023. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 12 January 2023
PBSS302NZ
Product data sheet
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12 January 2023
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Nexperia B.V. 2023. All rights reserved
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