PBSS3515M

DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS3515M 15 V, 0.5 A PNP low VCEsat (BISS) transistor Product data sheet 2003 Jul 22 NXP Semiconductors Product data sheet 15 V, 0.5 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management: – DC-DC converter – Supply line switching – Battery charger – LCD backlighting. • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load drivers (e.g. relays, buzzers and motors). handbook, halfpage PBSS3515M QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −15 −500 −1