PBSS3540E

PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor Rev. 02 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2540E. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. VCEO IC ICM RCEsat [1] Quick reference data Conditions open base Min IC = −500 mA; IB = −50 mA [1] Symbol Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance Typ 440 Max −40 −500 −1 700 Unit V mA A mΩ - Pulse test: tp ≤ 300 μs; δ ≤ 0.02. NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitter collector 1 2 3 1 2 sym013 Simplified outline Symbol 3 3. Ordering information Table 3. Ordering information Package Name PBSS3540E SC-75 Description plastic surface mounted package; 3 leads Version SOT416 Type number 4. Marking Table 4. Marking codes Marking code 1T Type number PBSS3540E PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 2 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tj Tamb Tstg [1] [2] Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation junction temperature ambient temperature storage temperature Conditions open emitter open base open collector Min - Max −40 −40 −6 −500 −1 −100 150 250 150 +150 +150 Unit V V V mA A mA mW mW °C °C °C Tamb ≤ 25 °C [1] [2] −65 −65 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 300 Ptot (mW) (1) 006aaa412 200 (2) 100 0 0 40 80 120 160 Tamb (°C) (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 3 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air [1] [2] Min - Typ - Max 833 500 Unit K/W K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.33 0.2 0.1 0.05 0.02 10 0.01 0 0.75 006aaa413 1 10−5 10−4 10−3 10−2 10−1 1 10 102 t p (s) 103 FR4 PCB, mounting pad for collector 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 4 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current emitter-base cut-off current DC current gain Conditions VCB = −40 V; IE = 0 A VCB = −40 V; IE = 0 A; Tj = 150 °C VEB = −5 V; IC = 0 A VCE = −2 V; IC = −10 mA VCE = −2 V; IC = −100 mA VCE = −2 V; IC = −500 mA VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA IC = −100 mA; IB = −5 mA IC = −200 mA; IB = −10 mA IC = −500 mA; IB = −50 mA RCEsat VBEsat VBEon fT Cc collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] [1] [1] [1] Min 200 150 40 100 - Typ 440 300 - Max −100 −50 −100 −50 −130 −200 −350 700 −1.2 −1.1 10 Unit nA μA nA IEBO hFE mV mV mV mV mΩ V V MHz pF IC = −500 mA; IB = −50 mA IC = −500 mA; IB = −50 mA VCE = −2 V; IC = −100 mA VCE = −5 V; IC = −100 mA; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz [1] [1] PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 5 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 600 (1) 006aaa388 −1.1 VBE (V) −0.9 006aaa389 hFE (1) 400 (2) −0.7 (2) (3) 200 (3) −0.5 −0.3 0 −10−1 −1 −10 −102 IC (mA) −103 − 0.1 −10−1 −1 −10 −102 IC (mA) −103 VCE = −2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values −1 006aaa390 Fig 4. Base-emitter voltage as a function of collector current; typical values −1 006aaa391 VCEsat (V) VCEsat (V) −10−1 (1) (2) (3) −10−1 (1) (2) (3) −10−2 −10−1 −1 −10 −102 −103 IC (mA) −10−2 −10−1 −1 −10 −102 −103 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 6 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor −1.1 VBEsat (V) −0.9 006aaa392 103 RCEsat (Ω) 006aaa393 (1) 102 (2) −0.7 (3) 10 (1) (2) (3) −0.5 1 −0.3 −0.1 −10−1 −1 −10 −102 IC (mA) −103 10−1 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values −1 006aaa394 Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa395 IB (mA) = −30 IC −27 (A) −24 −21 −0.8 −18 −0.6 103 RCEsat (Ω) −15 −12 −9 −6 102 10 (1) (2) −0.4 −3 −0.2 1 (3) 0 0 −1 −2 −3 −4 −5 VCE (V) 10−1 −10−1 −1 −10 −102 IC (mA) −103 Tamb = 25 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 7 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 8. Package outline 1.8 1.4 3 0.45 0.15 0.95 0.60 1.75 0.9 1.45 0.7 1 2 0.30 0.15 1 0.25 0.10 04-11-04 Dimensions in mm Fig 11. Package outline SOT416 (SC-75) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS3540E [1] Package SOT416 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 -115 10000 -135 For further information and the availability of packing methods, see Section 13. 10. Soldering 2.2 0.6 0.7 1.1 2 2.0 0.85 3 1 0.5 (3x) 1.5 0.6 (3x) 1.9 Dimensions in mm solder lands solder resist msa438 solder paste occupied area Reflow soldering is the only recommended soldering method. Fig 12. Reflow soldering footprint PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 8 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 11. Revision history Table 9. Revision history Release date 20091211 Data sheet status Product data sheet Change notice Supersedes PBSS3540E_1 Document ID PBSS3540E_2 Modifications: • • • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 4 “Base-emitter voltage as a function of collector current; typical values”: updated Figure 12 “Reflow soldering footprint”: updated Product data sheet - PBSS3540E_1 20050503 PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 9 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet [1] [2] [3] Product status[3] Development Qualification Production Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS3540E_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 10 of 11 NXP Semiconductors PBSS3540E 40 V, 500 mA PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information. . . . . . . . . . . . . . . . . . . . . 10 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2009 Document identifier: PBSS3540E_2