PBSS4041PT,215

PBSS4041PT 60 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 02 — 9 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4041NT. 1.2 Features and benefits „ „ „ „ „ „ Very low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications „ „ „ „ „ Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −60 V IC collector current - - −2.7 A ICM peak collector current single pulse; tp ≤ 1 ms - - −8 A RCEsat collector-emitter saturation resistance IC = −3 A; IB = −300 mA - 80 120 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4041PT - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PBSS4041PT *BL [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PBSS4041PT_2 Product data sheet Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −60 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector - −5 V IC collector current - −2.7 A ICM peak collector current - −8 A IB base current - −1 A single pulse; tp ≤ 1 ms All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 2 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 390 mW [2] - 660 mW [3] - 1100 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab954 1.5 Ptot (W) (1) 1.0 (2) 0.5 0 −75 (3) −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. PBSS4041PT_2 Product data sheet Power derating curves All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 320 K/W [2] - - 190 K/W [3] - - 115 K/W - - 62 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab955 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041PT_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 006aab956 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab957 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS4041PT_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Typ Max Unit - - −100 nA - - −55 μA collector-emitter cut-off current VCE = −48 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V; IC = −500 mA collector-emitter saturation voltage 200 300 - VCE = −2 V; IC = −1 A [1] 150 270 - VCE = −2 V; IC = −2 A [1] 120 180 - VCE = −2 V; IC = −4 A [1] 35 55 - - −49 −75 mV IC = −500 mA; IB = −50 mA IC = −1 A; IB = −50 mA [1] - −100 −150 mV IC = −1 A; IB = −10 mA [1] - −260 −390 mV IC = −2 A; IB = −40 mA [1] - −420 −600 mV IC = −3 A; IB = −300 mA [1] - −240 −360 mV RCEsat collector-emitter IC = −3 A; IB = −300 mA saturation resistance [1] - 80 120 mΩ VBEsat base-emitter saturation voltage IC = −1 A; IB = −100 mA [1] - −0.9 −1.0 V IC = −3 A; IB = −300 mA [1] - −1.04 −1.15 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A - −0.84 −0.9 V td delay time - 18 - ns tr rise time - 70 - ns ton turn-on time VCC = −12.5 V; IC = −1 A; IBon = −0.05 A; IBoff = 0.05 A - 88 - ns ts storage time - 350 - ns tf fall time - 80 - ns toff turn-off time - 430 - ns fT transition frequency - 150 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 38 - pF [1] Product data sheet collector-base cut-off VCB = −60 V; IE = 0 A current VCB = −60 V; IE = 0 A; Tj = 150 °C Min ICES VCEsat PBSS4041PT_2 Conditions VCE = −10 V; IC = −100 mA; f = 100 MHz Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 006aac028 500 hFE 006aac029 −5 IC (A) 400 IB (mA) = −50 −4 (1) −45 −40 −3 300 (2) −20 −2 200 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −2 V −15 −5 −1 0 −10−1 −25 −10 (3) 100 −35 −30 −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aac030 −1.6 VBE (V) Fig 6. Collector current as a function of collector-emitter voltage; typical values 006aac031 −1.6 VBEsat (V) −1.2 −1.2 (1) −0.8 (1) (2) −0.6 (3) (2) −0.4 (3) 0.0 −10−1 −1 −10 −102 −103 −104 IC (mA) −0.2 −10−1 VCE = −2 V −1 (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Product data sheet −103 −104 IC (mA) (1) Tamb = −55 °C (2) Tamb = 25 °C PBSS4041PT_2 −102 IC/IB = 20 (1) Tamb = −55 °C Fig 7. −10 Fig 8. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 006aac032 −1 006aac033 −1 VCEsat (V) VCEsat (V) −10−1 (1) −10−1 (2) −10−2 (3) (2) (1) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. −10 Collector-emitter saturation voltage as a function of collector current; typical values 006aac034 103 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aac035 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 (1) (1) 10−1 (2) 10−2 −10−1 −1 −10 (2) 10−1 (3) −102 (3) −103 −104 IC (mA) 10−2 −10−1 −1 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 PBSS4041PT_2 −10 Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 14. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBSS4041PT_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 15. Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS4041PT [1] PBSS4041PT_2 Product data sheet Package Description SOT23 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 16. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 17. Wave soldering footprint SOT23 (TO-236AB) PBSS4041PT_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4041PT_2 20100309 Product data sheet - PBSS4041PT_1 - - Modifications: PBSS4041PT_1 PBSS4041PT_2 Product data sheet • Typo for VBEsat maximum value amended 20100131 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 13.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. PBSS4041PT_2 Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. The product is not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred to as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 13 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBSS4041PT_2 Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 02 — 9 March 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 PBSS4041PT NXP Semiconductors 60 V, 2.7 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 March 2010 Document identifier: PBSS4041PT_2