PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
Rev. 03 — 11 December 2009 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5160U.
1.2 Features
Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
High voltage DC-to-DC conversion High voltage MOSFET gate driving High voltage motor control High voltage power switches (e.g. motors, fans) Automotive applications
1.4 Quick reference data
Table 1. Symbol VCEO IC ICM RCEsat
[1] [2]
Quick reference data Parameter collector-emitter voltage collector current (DC) peak collector current collector-emitter saturation resistance single pulse; tp ≤ 1 ms IC = 1 A; IB = 100 mA
[2]
Conditions open base
[1]
Min -
Typ 230
Max 60 1 2 280
Unit V A A mΩ
Device mounted on a ceramic PCB, Al2O3, standard footprint. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description base emitter collector
1 2 3 1 2
sym021
Simplified outline
Symbol
3
3. Ordering information
Table 3. Ordering information Package Name PBSS4160U SC-70 Description plastic surface mounted package; 3 leads Version SOT323 Type number
4. Marking
Table 4. Marking codes Marking code[1] 52* Type number PBSS4160U
[1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
2 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VCBO VCEO VEBO IC Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Conditions open emitter open base open collector
[1] [2] [3]
Min [1] [2] [3]
Max 80 60 5 750 930 1 2 300 1 250 350 415 150 +150 +150
Unit V V V mA mA A A mA A mW mW mW °C °C °C
ICM IB IBM Ptot
peak collector current base current (DC) peak base current total power dissipation
single pulse; tp ≤ 1 ms single pulse; tp ≤ 1 ms Tamb ≤ 25 °C
−65 −65
Tj Tamb Tstg
[1] [2] [3]
junction temperature ambient temperature storage temperature
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
0.5 Ptot (W) 0.4
(2) (1)
006aaa501
0.3
(3)
0.2
0.1
0 0 40 80 120 160 Tamb (°C)
(1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint
Fig 1.
Power derating curves
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
3 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1] [2] [3]
Min -
Typ -
Max 500 357 301 150
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3]
thermal resistance from junction to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint.
103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.20 0.10 0.05 0.02 0.01 0.33
006aaa502
10
0 1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
4 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
103 Zth(j-a) (K/W) 102 δ=1 0.75 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−5
006aaa503
10−4
10−3
10−2
10−1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for collector 1 cm2
Fig 3.
103 Zth(j-a) (K/W) 102
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa504
δ=1 0.75 0.50 0.33 0.20 0.10 0.05
10
0.02 0.01 0
1 10−5
10−4
10−3
10−2
10−1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
5 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol ICBO Parameter collector-base cut-off current collector-emitter cut-off current DC current gain Conditions VCB = 60 V; IE = 0 A VCB = 60 V; IE = 0 A; Tj = 150 °C VCE = 60 V; VBE = 0 V Min 250
[1] [1]
Typ 500 420 180 90 120 230 230 0.95 0.85 11 78 90 340 160 500 220
Max 100 50 100 100 115 150 280 280 1.1 0.9 -
Unit nA μA nA nA
ICES IEBO hFE
emitter-base cut-off current VEB = 5 V; IC = 0 A VCE = 5 V; IC = 1 mA VCE = 5 V; IC = 500 mA VCE = 5 V; IC = 1 A
200 100 -
VCEsat
collector-emitter saturation voltage
IC = 100 mA; IB = 1 mA IC = 500 mA; IB = 50 mA IC = 1 A; IB = 100 mA
[1] [1]
mV mV mV mΩ V V ns ns ns ns ns ns MHz
-
RCEsat VBEsat VBEon td tr ton ts tf toff fT
collector-emitter saturation resistance base-emitter saturation voltage base-emitter turn-on voltage delay time rise time turn-on time storage time fall time turn-off time transition frequency
IC = 1 A; IB = 100 mA IC = 1 A; IB = 50 mA VCE = 5 V; IC = 1 A IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA
[1]
[1]
VCE = 10 V; IC = 50 mA; f = 100 MHz VCB = 10 V; IE = ie = 0 A; f = 1 MHz
150
Cc
[1]
collector capacitance
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
-
5.5
10
pF
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
6 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
800 hFE 600
(2) (1)
006aaa505
1.2 VBE (V) 1.0
006aaa506
0.8
(1)
400 0.6
(3) (2)
200 0.4
(3)
0 10−1
1
10
102
103 104 IC (mA)
0.2 10−1
1
10
102
103 104 IC (mA)
VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
VCE = 5 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C
Fig 5.
DC current gain as a function of collector current; typical values
1
006aaa507
Fig 6.
Base-emitter voltage as a function of collector current; typical values
1
006aaa508
VCEsat (mV)
VCEsat (V) 10−1
(1) (2)
10−1 10−2
(3)
(1) (2) (3)
10−2 10−1
1
10
102
103 104 IC (mA)
10−3 10−1
1
10
102
103 104 IC (mA)
IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 7.
Collector-emitter saturation voltage as a function of collector current; typical values
Fig 8.
Collector-emitter saturation voltage as a function of collector current; typical values
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
7 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
1.2 VBEsat (V) 1.0
006aaa509
103 RCEsat (Ω) 102
006aaa510
0.8
(1)
10
(2)
0.6
(3) (1) (2) (3)
1
0.4
0.2 10−1
1
10
102
103 104 IC (mA)
10−1 10−1
1
10
102
103 104 IC (mA)
IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C
IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 9.
Base-emitter saturation voltage as a function of collector current; typical values
2.0
006aaa511
Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values
103 RCEsat (Ω) 102
006aaa512
IC (A) 1.6
IB (mA) = 65.0
58.5 52.0 45.5 39.0 32.5 26.0 19.5
1.2
13.0 6.5 10
(1) (2)
0.8
1 0.4
(3)
0 0 1 2 3 4 VCE (V) 5
10−1
10−1
1
10
102
103 104 IC (mA)
Tamb = 25 °C
Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10
Fig 11. Collector current as a function of collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
8 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
8. Test information
IB 90 % input pulse (idealized waveform) IBon (100 %)
10 %
IBoff
IC 90 %
output pulse (idealized waveform)
IC (100 %)
10 % t td ton tr ts toff tf
006aaa003
Fig 13. BISS transistor switching time definition
VBB VCC
RB (probe) oscilloscope 450 Ω VI R1 R2
RC Vo (probe) 450 Ω DUT oscilloscope
mlb826
IC = 0.5 A; IBon = 25 mA; IBoff = −25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Fig 14. Test circuit for switching times
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
9 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
9. Package outline
2.2 1.8 3 0.45 0.15
1.1 0.8
2.2 1.35 2.0 1.15
1
2 0.4 0.3 1.3 0.25 0.10 04-11-04
Dimensions in mm
Fig 15. Package outline SOT323 (SC-70)
10. Packing information
Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBSS4160U
[1]
Package SOT323
Description 4 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 10000 -135
For further information and the availability of packing methods, see Section 14.
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
10 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
11. Soldering
2.65 0.75 1.325 1.30 solder lands
2
solder paste 0.60 2.35 0.85 (3×)
3
0.50 (3×) 1.90
1
solder resist occupied area Dimensions in mm
0.55 (3×)
2.40
msa429
Fig 16. Reflow soldering footprint
4.60 4.00 1.15
2
3.65
2.10
3
2.70 solder lands
1
0.90 (2×)
solder resist occupied area Dimensions in mm
preferred transport direction during soldering
msa419
Fig 17. Wave soldering footprint
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
11 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history Release date 20091211 Data sheet status Product data sheet Change notice Supersedes PBSS4160U_2 Document ID PBSS4160U_3 Modifications:
• • •
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Figure 16 “Reflow soldering footprint”: updated Figure 17 “Wave soldering footprint”: updated Product data sheet Objective data sheet PBSS4160U_1 -
PBSS4160U_2 PBSS4160U_1
20050719 20040423
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
12 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term ‘short data sheet’ is explained in section “Definitions”. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS4160U_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 11 December 2009
13 of 14
NXP Semiconductors
PBSS4160U
60 V, 1 A NPN low VCEsat (BISS) transistor
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2009 Document identifier: PBSS4160U_3
