PBSS5140T
40 V, 1 A PNP low VCEsat transistor
4 October 2023
Product data sheet
1. General description
PNP low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic
package.
NPN complement: PBSS4140T
2. Features and benefits
•
•
•
•
•
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
General-purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery-driven equipment (mobile phones, video cameras and handheld devices)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
-40
V
IC
collector current
-
-
-1
A
ICM
peak collector current
single pulse; tp ≤ 1 ms
-
-
-2
A
RCEsat
collector-emitter
saturation resistance
IC = -500 mA; IB = -50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
300
500
mΩ
PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
B
base
2
E
emitter
3
C
collector
Simplified outline
Graphic symbol
3
C
B
1
2
SOT23
E
sym132
6. Ordering information
Table 3. Ordering information
Type number
Package
PBSS5140T
Name
Description
Version
SOT23
plastic, surface-mounted package; 3 terminals; 1.9 mm
pitch; 2.9 mm x 1.3 mm x 1 mm body
SOT23
7. Marking
Table 4. Marking codes
Type number
Marking code[1]
PBSS5140T
%2H
[1]
% = placeholder for manufacturing site code
PBSS5140T
Product data sheet
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
-40
V
VCEO
collector-emitter voltage
open base
-
-40
V
VEBO
emitter-base voltage
open collector
-
-5
V
IC
collector current
-
-1
A
ICM
peak collector current
-
-2
A
IBM
peak base current
-
-1
A
Ptot
total power dissipation
[1]
-
300
mW
[2]
-
450
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
-65
150
°C
Tstg
storage temperature
-65
150
°C
[1]
[2]
single pulse; tp ≤ 1 ms
Tamb ≤ 25 °C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
006aab308
1
Ptot
(W)
0.75
0.5
(1)
(2)
0.25
0
- 75
- 25
25
(1) FR4 PCB, mounting pad for collector 1 cm
(2) FR4 PCB, standard footprint
Fig. 1.
75
2
125
175
Tamb (°C)
Power derating curves
PBSS5140T
Product data sheet
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Rth(j-a)
[1]
[2]
Conditions
thermal resistance from in free air
junction to ambient
Min
Typ
Max
Unit
[1]
-
-
417
K/W
[2]
-
-
278
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm .
103
Zth(j-a)
(K/W)
006aab309
duty cycle =
1
0.75
102
0.5
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10- 1
10- 5
Fig. 2.
10- 4
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
006aab310
duty cycle =
1
102
0.5
0.2
10
0.05
0.01
0.75
0.33
0.1
0.02
0
1
10- 1
10- 5
Fig. 3.
10- 4
10- 3
10- 2
10- 1
1
10
102
tp (s)
103
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS5140T
Product data sheet
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
VCB = -40 V; IE = 0 A; Tamb = 25 °C
-
-
-100
nA
VCB = -40 V; IE = 0 A; Tj = 150 °C
-
-
-50
µA
collector-base cut-off
current
ICEO
collector-emitter cut-off IB = 0 A; VCE = -30 V; Tamb = 25 °C
current (base open)
-
-
-100
nA
IEBO
emitter-base cut-off
current
VEB = -5 V; IC = 0 A; Tamb = 25 °C
-
-
-100
nA
hFE
DC current gain
VCE = -5 V; IC = -1 mA; Tamb = 25 °C
300
-
-
VCE = -5 V; IC = -100 mA; Tamb = 25 °C
300
-
800
VCE = -5 V; IC = -500 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
250
-
-
VCE = -5 V; IC = -1 A; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
160
-
-
IC = -100 mA; IB = -1 mA; Tamb = 25 °C
-
-
-200
mV
IC = -500 mA; IB = -50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-250
mV
IC = -1 A; IB = -100 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-500
mV
IC = -500 mA; IB = -50 mA; pulsed; tp ≤
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
300
500
mΩ
VCEsat
collector-emitter
saturation voltage
RCEsat
collector-emitter
saturation resistance
VBEsat
base-emitter saturation IC = -1 A; IB = -50 mA; pulsed; tp ≤
voltage
300 µs; δ ≤ 0.02; Tamb = 25 °C
-
-
-1.1
V
VBEon
base-emitter turn-on
voltage
VCE = -5 V; IC = -1 A; Tamb = 25 °C
-
-
-1
V
td
delay time
10
-
ns
rise time
VCC = -10 V; IC = -0.5 A; IBon = -25 mA;
IBoff = 25 mA; Tamb = 25 °C
-
tr
-
31
-
ns
ton
turn-on time
-
41
-
ns
ts
storage time
-
195
-
ns
tf
fall time
-
65
-
ns
toff
turn-off time
-
260
-
ns
fT
transition frequency
VCE = -10 V; IC = -50 mA; f = 100 MHz;
Tamb = 25 °C
150
-
-
MHz
Cc
collector capacitance
VCB = -10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
-
-
12
pF
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
006aab311
1000
006aab312
-2
hFE
IB (mA) = - 60
IC
(A)
800
- 42
- 54
- 36
- 48
- 1.5
(1)
- 18
600
(2)
- 12
-1
-6
400
(3)
- 0.5
200
0
- 10- 1
-1
- 102
- 10
0
- 103
- 104
IC (mA)
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4.
- 30
- 24
0
- 0.4
- 0.8
- 1.2
- 1.6
-2
VCE (V)
Tamb = 25 °C
Fig. 5.
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
006aab313
- 1.2
006aab314
- 1.3
VBE
(V)
VBEsat
(V)
(1)
- 0.8
- 0.9
(1)
(2)
(2)
(3)
(3)
- 0.4
0
- 10- 1
- 0.5
-1
- 10
- 102
- 0.1
- 10- 1
- 103
- 104
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 6.
Product data sheet
- 10
- 102
- 103
- 104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
PBSS5140T
-1
Fig. 7.
Base-emitter saturation voltage as a function of
collector current; typical values
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
006aab315
-1
006aab316
-1
VCEsat
(V)
VCEsat
(V)
- 10- 1
- 10- 1
(1)
(2)
(3)
(1)
(2)
- 10- 2
- 10- 3
- 10- 1
- 10- 2
-1
- 10
- 102
- 10- 3
- 10- 1
- 103
- 104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 8.
-1
006aab317
103
Fig. 9.
102
102
006aab318
10
(1)
(2)
(1)
(2)
(3)
1
1
- 10
- 102
10- 1
- 10- 1
- 103
- 104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Product data sheet
(3)
-1
- 10
- 102
- 103
- 104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS5140T
- 103
- 104
IC (mA)
103
RCEsat
(Ω)
-1
- 102
Collector-emitter saturation voltage as a
function of collector current; typical values
RCEsat
(Ω)
10- 1
- 10- 1
- 10
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
10
(3)
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
11. Test information
- IB
input pulse
(idealized waveform)
90 %
- I Bon (100 %)
10 %
- I Boff
output pulse
(idealized waveform)
- IC
90 %
- I C (100 %)
10 %
t
td
ts
tr
t on
tf
t off
006aaa266
Fig. 12. Transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mgd624
VCC = -10 V; IC = -0.5 A; IBon = -25 mA; IBoff = 25 mA
Fig. 13. Test circuit for switching times
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
PBSS5140T
Product data sheet
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
12. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
1.9
Dimensions in mm
0.15
0.09
18-03-12
Fig. 14. Package outline SOT23
13. Soldering
3.3
2.9
1.9
solder lands
3
2
1.7
solder resist
solder paste
0.6
(3×)
0.7
(3×)
occupied area
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 15. Reflow soldering footprint for SOT23
PBSS5140T
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
2.2
1.2
(2×)
1.4
(2×)
solder lands
4.6
solder resist
2.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 16. Wave soldering footprint for SOT23
PBSS5140T
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PBSS5140T v.5
20231004
Product data sheet
-
PBSS5140T_4
Modifications:
•
•
•
The format of this data sheet has been redesigned to comply with the identity guidelines of
Nexperia.
Legal texts have been adapted to the new company name where appropriate.
Section "Packing information" removed.
PBSS5140T_4
20080729
Product data sheet
-
PBSS5140T_3
PBSS5140T_3
20040107
Product specification
-
PBSS5140T_2
PBSS5140T_2
20010720
Product specification
-
PBSS5140T_1
PBSS5140T_1
20001116
Product specification
-
-
PBSS5140T
Product data sheet
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PBSS5140T
Nexperia
40 V, 1 A PNP low VCEsat transistor
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no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
15. Legal information
Data sheet status
Document status
[1][2]
Product
status [3]
Definition
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
This document contains data from
the preliminary specification.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Product [short]
data sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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PBSS5140T
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40 V, 1 A PNP low VCEsat transistor
Contents
1. General description...................................................... 1
2. Features and benefits.................................................. 1
3. Applications.................................................................. 1
4. Quick reference data....................................................1
5. Pinning information......................................................2
6. Ordering information....................................................2
7. Marking.......................................................................... 2
8. Limiting values............................................................. 3
9. Thermal characteristics............................................... 4
10. Characteristics............................................................ 5
11. Test information.......................................................... 8
12. Package outline.......................................................... 9
13. Soldering..................................................................... 9
14. Revision history........................................................11
15. Legal information......................................................12
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Nexperia B.V. 2023. All rights reserved
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For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 4 October 2023
PBSS5140T
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