PBSS5140V

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Oct 19 2002 Mar 20 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor FEATURES • 300 mW total power dissipation • Very small 1.6 mm × 1.2 mm × 0.55 mm ultra thin package • Improved thermal behaviour due to flat leads • Self alignment during soldering due to straight leads • Low collector-emitter saturation voltage • High current capability APPLICATIONS • General purpose switching and muting • LCD back lighting • Supply line switching circuits • Battery driven equipment (mobile phones, video cameras and hand-held devices). DESCRIPTION PNP low VCE sat transistor in a SOT666 plastic package. NPN complement: PBSS4140V. MARKING handbook, halfpage PBSS5140V QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 DESCRIPTION collector collector base emitter collector collector PARAMETER collector-emitter voltage collector current (DC) peak collector current MAX. −40 −1 −2 UNIT V A A mΩ equivalent on-resistance