PBSS5240Y

DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS5240Y 40 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Oct 24 2002 Feb 28 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SOT363 (SC-88) plastic package. NPN complement: PBSS4240Y. MARKING handbook, halfpage PBSS5240Y QUICK REFERENCE DATA SYMBOL VCEO ICM IC RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage peak collector current collector current (DC) equivalent on-resistance MAX. −40 −3 −2