PBSS5320X

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PBSS5320X 20 V, 3 A PNP low VCEsat (BISS) transistor Product data sheet Supersedes data of 2003 Nov 27 2004 Nov 04 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor FEATURES • SOT89 (SC-62) package • Low collector-emitter saturation voltage VCEsat • High collector current capability: IC and ICM • Higher efficiency leading to less heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – LCD backlighting. • Peripheral drivers – Driver in low supply voltage applications (e.g. lamps and LEDs) – Inductive load driver (e.g. relays, buzzers and motors). QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 emitter collector base PARAMETER PBSS5320X MAX. −20 −3 −5 105 UNIT V A A mΩ collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance DESCRIPTION 2 3 DESCRIPTION PNP low VCEsat transistor in a SOT89 plastic package. NPN complement: PBSS4320X. MARKING TYPE NUMBER PBSS5320X ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5320X SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads VERSION SOT89 MARKING CODE S45 Fig.1 Simplified outline (SOT89) and symbol. 1 3 2 1 sym079 2004 Nov 04 2 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IB Ptot PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current base current (DC) total power dissipation Tamb ≤ 25 °C note 1 note 2 note 3 note 4 Tstg Tj Tamb Notes storage temperature junction temperature ambient temperature − − − − −65 − −65 CONDITIONS open emitter open base open collector note 4 limited by Tj(max) − − − − − − MIN. PBSS5320X MAX. −20 −20 −5 −3 −5 −0.5 550 1 1.4 1.6 +150 150 +150 V V V A A A UNIT mW W W W °C °C °C 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 2004 Nov 04 3 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X handbook, halfpage 2 MLE372 Ptot (W) 1.6 (1) (2) 1.2 (3) 0.8 (4) 0.4 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB; 7 cm2 mounting pad for collector. (2) FR4 PCB; 6 cm2 copper mounting pad for collector. (3) FR4 PCB; 1 cm2 copper mounting pad for collector. (4) Standard footprint. Fig.2 Power derating curves. 2004 Nov 04 4 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS in free air note 1 note 2 note 3 note 4 Rth(j-s) Notes thermal resistance from junction to soldering point 225 125 90 80 16 VALUE PBSS5320X UNIT K/W K/W K/W K/W K/W 1. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; standard footprint. 2. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 1 cm2. 3. Device mounted on a FR4 printed-circuit board; single-sided copper; tin-plated; mounting pad for collector 6 cm2. 4. Device mounted on a ceramic printed-circuit board 7 cm2, single-sided copper, tin-plated. 103 Zth(j-a) (K/W) 102 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 1 0 006aaa243 10 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; standard footprint. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 5 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X 103 Zth(j-a) (K/W) 102 006aaa244 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 0.01 10 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 103 Zth(j-a) (K/W) 102 duty cycle = 1.00 0.75 0.50 0.33 0.20 0.10 0.05 0.02 1 0.01 0 006aaa245 10 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 tp (s) 103 Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 6 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO ICES IEBO hFE PARAMETER collector-base cut-off current collector-emitter cut-off current emitter-base cut-off current DC current gain CONDITIONS VCB = −20 V; IE = 0 A VCB = −20 V; IE = 0 A; Tj = 150 °C VCE = −20 V; VBE = 0 V VEB = −5 V; IC = 0 A VCE = −2 V IC = −0.1 A IC = −0.5 A IC = −1 A; note 1 IC = −2 A; note 1 IC = −3 A; note 1 VCEsat collector-emitter saturation voltage IC = −0.5 A; IB = −50 mA IC = −1 A; IB = −50 mA IC = −2 A; IB = −100 mA IC = −3 A; IB = −300 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage base-emitter turn-on voltage transition frequency collector capacitance IC = −3 A; IB = −300 mA; note 1 IC = −2 A; IB = −100 mA IC = −3 A; IB = −300 mA; note 1 VCE = −2 V; IC = −1 A IC = −100 mA; VCE = −5 V; f = 100 MHz VCB = −10 V; IE = ie = 0 A; f = 1 MHz 220 220 200 150 100 − − − − − − − −1.1 100 − − − − − − − − − − 90 MIN. − − − − PBSS5320X TYP. − − − − MAX. −100 −50 −100 −100 − − − − − −70 −130 −230 −300 105 − −1.2 − − 50 UNIT nA μA nA nA mV mV mV mV mΩ V V V MHz pF −1.1 − − − − 2004 Nov 04 7 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X 800 hFE 600 (2) (1) MLE374 handbook, halfpage −1.2 MLE368 VBE (V) (1) −0.8 (2) 400 (3) (3) −0.4 200 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) VCE = −2 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.6 DC current gain as a function of collector current; typical values. Fig.7 Base-emitter voltage as a function of collector current; typical values. handbook, halfpage −1 MLE370 handbook, halfpage −1 MLE371 VCEsat (V) −10−1 (1) VCEsat (V) −10−1 (2) (1) (2) −10−2 (3) −10−2 (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 04 8 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PBSS5320X handbook, halfpage −10 MLE369 103 handbook, halfpage RCEsat (Ω) MLE376 VBEsat (V) 102 10 −1 (1) (2) (3) (1) 1 10−1 (2) (3) −10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) 10−2 −1 −10 −1 −10 −102 −103 −104 IC (mA) IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. Tamb = 25 °C. (1) IC/IB = 100. (2) IC/IB = 50. (3) IC/IB = 10. Fig.10 Base-emitter saturation voltage as a function of collector current; typical values. Fig.11 Equivalent on-resistance as a function of collector current; typical values. 102 handbook, halfpage RCEsat (Ω) 10 MLE367 handbook, halfpage −5 MLE375 IC (A) −4 (1) (2) (3) (4) (5) (6) −3 1 −2 (1) (7) (8) (9) 10−1 (2) (3) (10) −1 10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 0 Tamb = 25 °C. (1) (2) (3) (4) −0.4 −0.8 −1.2 −1.6 −2 VCE (V) IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IB = −25 mA. IB = −22.5 mA. IB = −20 mA. IB = −17.5 mA. (5) IB = −15 mA. (6) IB = −12.5 mA. (7) IB = −10 mA. (8) IB = −7.5 mA. (9) IB = −5 mA. (10) IB = −2.5 mA. Fig.12 Equivalent on-resistance as a function of collector current; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 2004 Nov 04 9 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads PBSS5320X SOT89 D B A bp3 E HE Lp 1 2 bp2 wM bp1 e1 e 3 c 0 2 scale 4 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 bp1 0.48 0.35 bp2 0.53 0.40 bp3 1.8 1.4 c 0.44 0.23 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 Lp 1.2 0.8 w 0.13 OUTLINE VERSION SOT89 REFERENCES IEC JEDEC TO-243 JEITA SC-62 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 2004 Nov 04 10 NXP Semiconductors Product data sheet 20 V, 3 A PNP low VCEsat (BISS) transistor DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION PBSS5320X This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. 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Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 2004 Nov 04 11 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp12 Date of release: 2004 Nov 04 Document order number: 9397 750 13887