PBSS5330PA,115

PBSS5330PA 30 V, 3 A PNP low VCEsat (BISS) transistor 7 April 2015 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4330PA. 2. Features and benefits • • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 3. Applications • • • • • Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -30 V IC collector current - - -3 A ICM peak collector current single pulse; tp ≤ 1 ms - - -5 A RCEsat collector-emitter saturation resistance IC = -3 A; IB = -300 mA; pulsed; - 75 107 mΩ tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector Simplified outline Graphic symbol 3 3 1 2 1 2 sym013 Transparent top view DFN2020-3 (SOT1061) 6. Ordering information Table 3. Ordering information Type number PBSS5330PA Package Name Description Version DFN2020-3 DFN2020-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 2 x 2 x 0.65 mm SOT1061 7. Marking Table 4. Marking codes Type number Marking code PBSS5330PA AJ PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 2 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -30 V VCEO collector-emitter voltage open base - -30 V VEBO emitter-base voltage open collector - -6 V IC collector current - -3 A ICM peak collector current - -5 A IB base current - -500 mA Ptot total power dissipation [1] - 500 mW [2] - 1 W [3] - 1.25 W [4] - 2.1 W single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab999 2.5 Ptot (W) (1) 2.0 1.5 (2) (3) 1.0 (4) 0.5 0.0 - 75 - 25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint Fig. 1. (2) FR4 PCB, mounting pad for collector 6 cm 2 (3) FR4 PCB, mounting pad for collector 1 cm (4) FR4 PCB, standard footprint 2 Power derating curves PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 3 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air [1] [2] [3] [4] Min Typ Max Unit [1] - - 250 K/W [2] - - 125 K/W [3] - - 100 K/W [4] - - 60 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab979 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 1 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 4 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 006aab980 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 10 0.05 0.02 1 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 1 cm Fig. 3. 10- 1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac000 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 10 1 0.1 0 10- 1 10- 5 0.5 0.2 0.05 0.02 0.01 10- 4 10- 3 10- 2 FR4 PCB, mounting pad for collector 6 cm Fig. 4. 10- 1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 5 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 102 Zth(j-a) (K/W) 006aab982 duty cycle = 1 0.75 0.33 0.5 0.2 10 0.1 0.05 1 0.02 0.01 0 10- 1 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 102 tp (s) 103 Ceramic PCB, Al2O3, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 6 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -30 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -30 V; IE = 0 A; Tj = 150 °C - - -50 µA ICES collector-emitter cut-off VCE = -24 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -2 V; IC = -0.5 A; pulsed; 200 320 - 175 280 450 140 210 - 100 160 - - -45 -70 mV - -90 -130 mV - -170 -240 mV IC = -3 A; IB = -300 mA; pulsed; - -230 -320 mV RCEsat collector-emitter saturation resistance tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 75 107 mΩ VBEsat base-emitter saturation IC = -2 A; IB = -100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -0.89 -1.1 V - -0.97 -1.2 V - -0.75 -1 V tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -2 V; IC = -1 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCE = -2 V; IC = -3 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = -0.5 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -1 A; IB = -50 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -2 A; IB = -100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C VBEon base-emitter turn-on voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C td delay time VCC = -9 V; IC = -2 A; IBon = -0.1 A; - 11 - ns tr rise time IBoff = 0.1 A; Tamb = 25 °C - 59 - ns ton turn-on time - 70 - ns ts storage time - 165 - ns tf fall time - 35 - ns toff turn-off time - 200 - ns PBSS5330PA Product data sheet VCE = -2 V; IC = -1 A; pulsed; All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 7 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit fT transition frequency VCE = -5 V; IC = -100 mA; f = 100 MHz; 100 165 - MHz - 38 45 pF Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C 006aac036 800 hFE 600 006aac037 -5 IC (A) IB (mA) = - 53 - 42.4 -4 (1) - 31.8 0 - 10- 1 - 10.6 (3) - 5.3 -1 -1 - 10 - 102 0 - 103 - 104 IC (mA) VCE = −2 V 0 - 0.4 - 0.8 - 1.2 - 1.6 - 2.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C Fig. 7. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 6. - 26.5 - 15.9 -2 200 - 37.1 - 21.2 -3 (2) 400 - 47.7 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 8 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 006aac038 - 1.2 006aac039 - 1.4 VBEsat (V) VBE (V) (1) - 0.8 - 1.0 (2) (1) (3) (2) - 0.4 0 - 10- 1 Fig. 8. - 0.6 -1 - 102 - 10 - 0.2 - 10- 1 - 103 - 104 IC (mA) (3) -1 - 10 VCE = −2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig. 9. 006aac040 -1 VCEsat (V) - 102 - 103 - 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values 006aac041 -1 VCEsat (V) - 10- 1 - 10- 1 (1) (1) (2) (2) (3) - 10- 2 - 10- 2 (3) - 10- 3 - 10- 1 -1 - 10 - 102 - 10- 3 - 10- 1 - 103 - 104 IC (mA) IC/IB = 20 -1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 10. Collector-emitter saturation voltage as a function of collector current; typical values Product data sheet - 102 - 103 - 104 IC (mA) Tamb = 25 °C (1) Tamb = 100 °C PBSS5330PA - 10 Fig. 11. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 9 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 006aac042 102 006aac043 103 RCEsat (Ω) RCEsat (Ω) 102 10 10 (1) 1 1 10- 1 (1) (2) 10- 2 - 10- 1 -1 - 10 - 102 (2) (3) 10- 1 (3) 10- 2 - 10- 1 - 103 - 104 IC (mA) -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig. 12. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5330PA Product data sheet - 10 - 102 - 103 - 104 IC (mA) Fig. 13. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 10 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 14. BISS transistor switching time definition VBB RB VCC RC (probe) oscilloscope 450 Ω Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 15. Test circuit for switching times PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 11 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 12. Package outline 1.3 0.65 max 0.35 0.25 1 1.05 0.95 0.3 0.2 0.45 0.35 2 1.1 0.9 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig. 16. Package outline DFN2020-3 (SOT1061) 13. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 0.25 1.1 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Fig. 17. Reflow soldering footprint for DFN2020-3 (SOT1061) PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 12 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5330PA v.2 20150407 Product data sheet - PBSS5330PA v.1 Modifications: • PBSS5330PA v.1 20100419 PBSS5330PA Product data sheet Condition VCE changed for parameter ICES in Table 7, Characteristics Product data sheet - All information provided in this document is subject to legal disclaimers. 7 April 2015 - © Nexperia B.V. 2017. All rights reserved 13 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor In no event shall Nexperia be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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PBSS5330PA Product data sheet Suitability for use — Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of a Nexperia product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. 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Customer is responsible for doing all necessary testing for the customer’s applications and products using Nexperia products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). Nexperia does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. 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All rights reserved 14 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific Nexperia product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. Nexperia accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. 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The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 15 / 16 PBSS5330PA Nexperia 30 V, 3 A PNP low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 7 11 Test information ................................................... 11 12 Package outline ................................................... 12 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © Nexperia B.V. 2017. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 07 April 2015 PBSS5330PA Product data sheet All information provided in this document is subject to legal disclaimers. 7 April 2015 © Nexperia B.V. 2017. All rights reserved 16 / 16