PBSS5350D

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D302 PBSS5350D 50 V low VCEsat PNP transistor Product data sheet Supersedes data of 2001 Jul 13 2001 Nov 13 NXP Semiconductors Product data sheet 50 V low VCEsat PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC convertor applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). DESCRIPTION PNP low VCEsat transistor in a SC-74 (SOT457) plastic package. NPN complement: PBSS4350D. handbook, halfpage PBSS5350D QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 5 6 collector collector base emitter collector collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −3 −5